JP7432770B2 - 熱処理装置、熱処理方法及び記憶媒体 - Google Patents

熱処理装置、熱処理方法及び記憶媒体 Download PDF

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Publication number
JP7432770B2
JP7432770B2 JP2022571247A JP2022571247A JP7432770B2 JP 7432770 B2 JP7432770 B2 JP 7432770B2 JP 2022571247 A JP2022571247 A JP 2022571247A JP 2022571247 A JP2022571247 A JP 2022571247A JP 7432770 B2 JP7432770 B2 JP 7432770B2
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hot plate
substrate
heat treatment
gas
exhaust
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Japanese (ja)
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JPWO2023032214A5 (https=
JPWO2023032214A1 (https=
Inventor
健太郎 山村
真一路 川上
俊樹 相良
英一 松岡
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2022571247A 2021-09-06 2021-09-06 熱処理装置、熱処理方法及び記憶媒体 Active JP7432770B2 (ja)

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JP2024015515A JP7742438B2 (ja) 2021-09-06 2024-02-05 熱処理装置、熱処理方法及び記憶媒体

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PCT/JP2021/032713 WO2023032214A1 (ja) 2021-09-06 2021-09-06 熱処理装置、熱処理方法及び記憶媒体

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JPWO2023032214A1 JPWO2023032214A1 (https=) 2023-03-09
JPWO2023032214A5 JPWO2023032214A5 (https=) 2023-08-09
JP7432770B2 true JP7432770B2 (ja) 2024-02-16

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JP2024015515A Active JP7742438B2 (ja) 2021-09-06 2024-02-05 熱処理装置、熱処理方法及び記憶媒体

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US (1) US20240234174A1 (https=)
JP (2) JP7432770B2 (https=)
KR (1) KR102945105B1 (https=)
CN (1) CN116097399A (https=)
WO (1) WO2023032214A1 (https=)

Families Citing this family (1)

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Publication number Priority date Publication date Assignee Title
CN121419569A (zh) * 2024-07-24 2026-01-27 盛美半导体设备(上海)股份有限公司 基板热处理装置、热处理方法及涂覆显影设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016115919A (ja) 2014-12-10 2016-06-23 東京エレクトロン株式会社 加熱処理装置、加熱処理方法及び記憶媒体
JP2018098229A (ja) 2016-12-08 2018-06-21 東京エレクトロン株式会社 基板処理方法及び熱処理装置
JP2018137308A (ja) 2017-02-21 2018-08-30 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2020129607A (ja) 2019-02-08 2020-08-27 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2021068886A (ja) 2019-10-17 2021-04-30 東京エレクトロン株式会社 基板処理装置、基板処理方法、及び記憶媒体

Family Cites Families (7)

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Publication number Priority date Publication date Assignee Title
JP2564288B2 (ja) * 1987-01-23 1996-12-18 株式会社日立製作所 ベ−ク装置
JP3547724B2 (ja) * 2001-09-25 2004-07-28 沖電気工業株式会社 レジストパターンのベーク装置及びレジストパターンの形成方法
JP3989221B2 (ja) * 2001-10-25 2007-10-10 東京エレクトロン株式会社 熱処理装置および熱処理方法
JP2004260117A (ja) * 2003-02-27 2004-09-16 Nikon Corp ステージ装置、露光装置、及びデバイス製造方法
JP2005129698A (ja) * 2003-10-23 2005-05-19 Matsushita Electric Ind Co Ltd 半導体装置の製造装置および製造方法
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
JP7359680B2 (ja) * 2019-07-22 2023-10-11 東京エレクトロン株式会社 熱処理装置及び処理方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016115919A (ja) 2014-12-10 2016-06-23 東京エレクトロン株式会社 加熱処理装置、加熱処理方法及び記憶媒体
JP2018098229A (ja) 2016-12-08 2018-06-21 東京エレクトロン株式会社 基板処理方法及び熱処理装置
JP2018137308A (ja) 2017-02-21 2018-08-30 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2020129607A (ja) 2019-02-08 2020-08-27 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2021068886A (ja) 2019-10-17 2021-04-30 東京エレクトロン株式会社 基板処理装置、基板処理方法、及び記憶媒体

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KR102945105B1 (ko) 2026-03-30
WO2023032214A1 (ja) 2023-03-09
JP2024056775A (ja) 2024-04-23
JPWO2023032214A1 (https=) 2023-03-09
KR20240050299A (ko) 2024-04-18
US20240234174A1 (en) 2024-07-11
JP7742438B2 (ja) 2025-09-19
CN116097399A (zh) 2023-05-09

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