KR102945105B1 - 열처리 장치, 열처리 방법 및 기억 매체 - Google Patents

열처리 장치, 열처리 방법 및 기억 매체

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Publication number
KR102945105B1
KR102945105B1 KR1020237016180A KR20237016180A KR102945105B1 KR 102945105 B1 KR102945105 B1 KR 102945105B1 KR 1020237016180 A KR1020237016180 A KR 1020237016180A KR 20237016180 A KR20237016180 A KR 20237016180A KR 102945105 B1 KR102945105 B1 KR 102945105B1
Authority
KR
South Korea
Prior art keywords
substrate
heating plate
heat treatment
gas
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020237016180A
Other languages
English (en)
Korean (ko)
Other versions
KR20240050299A (ko
Inventor
겐타로 야마무라
신이치로 가와카미
도시키 사가라
에이이치 마츠오카
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20240050299A publication Critical patent/KR20240050299A/ko
Application granted granted Critical
Publication of KR102945105B1 publication Critical patent/KR102945105B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020237016180A 2021-09-06 2021-09-06 열처리 장치, 열처리 방법 및 기억 매체 Active KR102945105B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/032713 WO2023032214A1 (ja) 2021-09-06 2021-09-06 熱処理装置、熱処理方法及び記憶媒体

Publications (2)

Publication Number Publication Date
KR20240050299A KR20240050299A (ko) 2024-04-18
KR102945105B1 true KR102945105B1 (ko) 2026-03-30

Family

ID=85411114

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237016180A Active KR102945105B1 (ko) 2021-09-06 2021-09-06 열처리 장치, 열처리 방법 및 기억 매체

Country Status (5)

Country Link
US (1) US20240234174A1 (https=)
JP (2) JP7432770B2 (https=)
KR (1) KR102945105B1 (https=)
CN (1) CN116097399A (https=)
WO (1) WO2023032214A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121419569A (zh) * 2024-07-24 2026-01-27 盛美半导体设备(上海)股份有限公司 基板热处理装置、热处理方法及涂覆显影设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018137308A (ja) * 2017-02-21 2018-08-30 東京エレクトロン株式会社 基板処理装置及び基板処理方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2564288B2 (ja) * 1987-01-23 1996-12-18 株式会社日立製作所 ベ−ク装置
JP3547724B2 (ja) * 2001-09-25 2004-07-28 沖電気工業株式会社 レジストパターンのベーク装置及びレジストパターンの形成方法
JP3989221B2 (ja) * 2001-10-25 2007-10-10 東京エレクトロン株式会社 熱処理装置および熱処理方法
JP2004260117A (ja) * 2003-02-27 2004-09-16 Nikon Corp ステージ装置、露光装置、及びデバイス製造方法
JP2005129698A (ja) * 2003-10-23 2005-05-19 Matsushita Electric Ind Co Ltd 半導体装置の製造装置および製造方法
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
JP6406192B2 (ja) * 2014-12-10 2018-10-17 東京エレクトロン株式会社 加熱処理装置、加熱処理方法及び記憶媒体
JP6781031B2 (ja) * 2016-12-08 2020-11-04 東京エレクトロン株式会社 基板処理方法及び熱処理装置
JP7208813B2 (ja) * 2019-02-08 2023-01-19 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7359680B2 (ja) * 2019-07-22 2023-10-11 東京エレクトロン株式会社 熱処理装置及び処理方法
JP7499106B2 (ja) * 2019-10-17 2024-06-13 東京エレクトロン株式会社 基板処理装置、基板処理方法、及びプログラム

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018137308A (ja) * 2017-02-21 2018-08-30 東京エレクトロン株式会社 基板処理装置及び基板処理方法

Also Published As

Publication number Publication date
WO2023032214A1 (ja) 2023-03-09
JP7432770B2 (ja) 2024-02-16
JP2024056775A (ja) 2024-04-23
JPWO2023032214A1 (https=) 2023-03-09
KR20240050299A (ko) 2024-04-18
US20240234174A1 (en) 2024-07-11
JP7742438B2 (ja) 2025-09-19
CN116097399A (zh) 2023-05-09

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