CN116097399A - 热处理装置、热处理方法以及存储介质 - Google Patents

热处理装置、热处理方法以及存储介质 Download PDF

Info

Publication number
CN116097399A
CN116097399A CN202180063042.8A CN202180063042A CN116097399A CN 116097399 A CN116097399 A CN 116097399A CN 202180063042 A CN202180063042 A CN 202180063042A CN 116097399 A CN116097399 A CN 116097399A
Authority
CN
China
Prior art keywords
hot plate
heat treatment
gas
substrate
upper chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180063042.8A
Other languages
English (en)
Chinese (zh)
Inventor
山村健太郎
川上真一路
相良俊树
松冈英一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN116097399A publication Critical patent/CN116097399A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN202180063042.8A 2021-09-06 2021-09-06 热处理装置、热处理方法以及存储介质 Pending CN116097399A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/032713 WO2023032214A1 (ja) 2021-09-06 2021-09-06 熱処理装置、熱処理方法及び記憶媒体

Publications (1)

Publication Number Publication Date
CN116097399A true CN116097399A (zh) 2023-05-09

Family

ID=85411114

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180063042.8A Pending CN116097399A (zh) 2021-09-06 2021-09-06 热处理装置、热处理方法以及存储介质

Country Status (5)

Country Link
US (1) US20240234174A1 (https=)
JP (2) JP7432770B2 (https=)
KR (1) KR102945105B1 (https=)
CN (1) CN116097399A (https=)
WO (1) WO2023032214A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026021027A1 (zh) * 2024-07-24 2026-01-29 盛美半导体设备(上海)股份有限公司 基板热处理装置、热处理方法及涂覆显影设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2564288B2 (ja) * 1987-01-23 1996-12-18 株式会社日立製作所 ベ−ク装置
JP3547724B2 (ja) * 2001-09-25 2004-07-28 沖電気工業株式会社 レジストパターンのベーク装置及びレジストパターンの形成方法
JP3989221B2 (ja) * 2001-10-25 2007-10-10 東京エレクトロン株式会社 熱処理装置および熱処理方法
JP2004260117A (ja) * 2003-02-27 2004-09-16 Nikon Corp ステージ装置、露光装置、及びデバイス製造方法
JP2005129698A (ja) * 2003-10-23 2005-05-19 Matsushita Electric Ind Co Ltd 半導体装置の製造装置および製造方法
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
JP6406192B2 (ja) * 2014-12-10 2018-10-17 東京エレクトロン株式会社 加熱処理装置、加熱処理方法及び記憶媒体
JP6781031B2 (ja) * 2016-12-08 2020-11-04 東京エレクトロン株式会社 基板処理方法及び熱処理装置
JP6850627B2 (ja) * 2017-02-21 2021-03-31 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7208813B2 (ja) * 2019-02-08 2023-01-19 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7359680B2 (ja) * 2019-07-22 2023-10-11 東京エレクトロン株式会社 熱処理装置及び処理方法
JP7499106B2 (ja) * 2019-10-17 2024-06-13 東京エレクトロン株式会社 基板処理装置、基板処理方法、及びプログラム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026021027A1 (zh) * 2024-07-24 2026-01-29 盛美半导体设备(上海)股份有限公司 基板热处理装置、热处理方法及涂覆显影设备

Also Published As

Publication number Publication date
KR102945105B1 (ko) 2026-03-30
WO2023032214A1 (ja) 2023-03-09
JP7432770B2 (ja) 2024-02-16
JP2024056775A (ja) 2024-04-23
JPWO2023032214A1 (https=) 2023-03-09
KR20240050299A (ko) 2024-04-18
US20240234174A1 (en) 2024-07-11
JP7742438B2 (ja) 2025-09-19

Similar Documents

Publication Publication Date Title
KR102640367B1 (ko) 기판 처리 방법 및 열처리 장치
KR100829827B1 (ko) 기판 처리장치
KR101878992B1 (ko) 소수화 처리 장치, 소수화 처리 방법 및 컴퓨터 기억 매체
WO2004109779A1 (ja) 基板の処理膜の表面荒れを改善する方法及び基板の処理装置
TW202135201A (zh) 基板處理裝置、基板處理方法及記錄媒體
CN101840151A (zh) 涂布显影装置、涂布显影方法和存储介质
KR20190120516A (ko) 기판 처리 방법 및 기판 처리 장치
JP2004304104A (ja) 熱処理装置および熱処理装置内温度制御方法
JP7742438B2 (ja) 熱処理装置、熱処理方法及び記憶媒体
CN117170198A (zh) 热处理装置、热处理方法和存储介质
JP2003158061A (ja) 基板処理装置および基板処理方法
TWI902892B (zh) 熱處理裝置、熱處理方法及記錄媒體
JP3909574B2 (ja) レジスト塗布装置
TW202601299A (zh) 熱處理裝置、熱處理方法及記錄媒體
US20240347354A1 (en) Heat-treating method, heat-treating apparatus, and storage medium
JP4066255B2 (ja) 基板の処理装置及び基板の処理方法
JP2005270932A (ja) 塗布膜形成装置
JP7158549B2 (ja) 基板処理方法、基板処理システム及びコンピュータ読み取り可能な記憶媒体
TW202323985A (zh) 基板處理裝置及基板處理方法
JP2001210584A (ja) シリル化処理装置及びシリル化処理方法
CN118380359A (zh) 基板处理装置和基板处理方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination