JP7409035B2 - 半導体装置、半導体製造装置及び半導体装置の製造方法 - Google Patents
半導体装置、半導体製造装置及び半導体装置の製造方法 Download PDFInfo
- Publication number
- JP7409035B2 JP7409035B2 JP2019209021A JP2019209021A JP7409035B2 JP 7409035 B2 JP7409035 B2 JP 7409035B2 JP 2019209021 A JP2019209021 A JP 2019209021A JP 2019209021 A JP2019209021 A JP 2019209021A JP 7409035 B2 JP7409035 B2 JP 7409035B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- printed circuit
- insulated circuit
- insulated
- warp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 225
- 238000004519 manufacturing process Methods 0.000 title claims description 42
- 238000000034 method Methods 0.000 claims description 46
- 238000010438 heat treatment Methods 0.000 claims description 38
- 230000000295 complement effect Effects 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 22
- 238000005259 measurement Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 description 41
- 230000000052 comparative effect Effects 0.000 description 34
- 229910000679 solder Inorganic materials 0.000 description 34
- 230000007547 defect Effects 0.000 description 18
- 238000005476 soldering Methods 0.000 description 13
- 239000010949 copper Substances 0.000 description 12
- 238000012986 modification Methods 0.000 description 12
- 230000004048 modification Effects 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 11
- 238000003860 storage Methods 0.000 description 11
- 238000002844 melting Methods 0.000 description 10
- 230000008018 melting Effects 0.000 description 10
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5385—Assembly of a plurality of insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/4985—Flexible insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5387—Flexible insulating substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3447—Lead-in-hole components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10295—Metallic connector elements partly mounted in a hole of the PCB
- H05K2201/10303—Pin-in-hole mounted pins
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Combinations Of Printed Boards (AREA)
Description
<半導体装置>
第1実施形態に係る半導体装置に係る半導体装置(半導体モジュール)は、図1に示すように、絶縁回路基板1と、絶縁回路基板1の上面に搭載された半導体素子(半導体チップ)2a,2bと、絶縁回路基板1の上面に対向して配置されたプリント基板3とを備える。第1実施形態に係る半導体装置に係る半導体装置は、例えば3相ブリッジ回路の上下アームの一部を構成する。
次に、第1実施形態に係る半導体装置を製造するための半導体製造装置の一例を説明する。半導体製造装置は、図9に示すように、測定部101、コントローラ102、記憶部103及び組立部104を備える。
次に、図13のフローチャートを参照しながら、第1実施形態に係る半導体装置の製造方法の一例を説明する。ここでは、図1の半導体装置の符号を参照して説明する。
<半導体装置>
第2実施形態に係る半導体装置は、図15に示すように、第1絶縁回路基板1a及び第2絶縁回路基板1bと、第1絶縁回路基板1a及び第2絶縁回路基板1bの上面に対向して配置されたプリント基板3とを備える。なお、図15では図示を省略するが、第1絶縁回路基板1a及び第2絶縁回路基板1b及びプリント基板3の周囲を封止する封止材が設けられていてもよい。
次に、図30のフローチャートを参照して、第2実施形態に係る半導体装置の製造方法の一例を説明する。第2実施形態に係る半導体装置の製造方法においても、図9に示した半導体製造装置を使用することができる。ここでは、図15に示した半導体装置の符号を参照して説明する。
上記のように、本発明は第1及び第2実施形態によって記載したが、この開示の一部をなす論述及び図面は本発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかとなろう。
2a,2b…半導体素子(半導体チップ)
3…プリント基板
4a 外部端子
4a~4d…外部端子
5a~5d…ピン(導電ポスト)
6a~6d,7a~7d,8a~8d…接合材
9…錘
11…絶縁基板
12a~12d…上側導電層
13a,13b…下側導電層
31…絶縁層
32…第1配線層
33…第2配線層33
101…測定部
102…コントローラ
103…記憶部
104…組立部
Claims (3)
- 第1絶縁回路基板と、
前記第1絶縁回路基板の上面に搭載された第1半導体チップと、
前記第1絶縁回路基板の上方に配置されたプリント基板と、
前記プリント基板に挿入され、前記第1絶縁回路基板の上面に一端が接合された第1外部端子と、
前記プリント基板に挿入され、前記第1半導体チップの上面に一端が接合された第1ピンと、
前記第1絶縁回路基板と離間して配置された第2絶縁回路基板と、
前記第2絶縁回路基板の上面に搭載された第2半導体チップと、
前記プリント基板に挿入され、前記第2絶縁回路基板の上面に一端が接合された第2外部端子と、
前記プリント基板に挿入され、前記第2半導体チップの上面に一端が接合された第2ピンと、
を備え、
前記第1絶縁回路基板及び前記プリント基板が、互いに相補的な反りを有し、
前記第2絶縁回路基板及び前記プリント基板が、互いに相補的な反りを有し、
前記第1絶縁回路基板が正反りを有し、
前記第2絶縁回路基板が負反りを有し、
前記プリント基板がうねりを有し、前記プリント基板の前記第1絶縁回路基板に対向する一部が下側に凸であり、前記プリント基板の前記第2絶縁回路基板に対向する一部が上側に凸である
ことを特徴とする半導体装置。 - 第1絶縁回路基板と、前記第1絶縁回路基板の上面に搭載された第1半導体チップと、前記第1絶縁回路基板の上方に配置されたプリント基板と、前記プリント基板に挿入され、前記第1絶縁回路基板の上面に一端が接合された第1外部端子と、前記プリント基板に挿入され、前記第1半導体チップの上面に一端が接合された第1ピンと、前記第1絶縁回路基板と離間して配置された第2絶縁回路基板と、前記第2絶縁回路基板の上面に搭載された第2半導体チップと、前記プリント基板に挿入され、前記第2絶縁回路基板の上面に一端が接合された第2外部端子と、前記プリント基板に挿入され、前記第2半導体チップの上面に一端が接合された第2ピンとを備え、前記第1絶縁回路基板及び前記プリント基板が、互いに相補的な反りを有し、前記第2絶縁回路基板及び前記プリント基板が、互いに相補的な反りを有し、前記第1絶縁回路基板が正反りを有し、前記第2絶縁回路基板が負反りを有し、前記プリント基板がうねりを有し、前記プリント基板の前記第1絶縁回路基板に対向する一部が下側に凸であり、前記プリント基板の前記第2絶縁回路基板に対向する一部が上側に凸である半導体装置を製造するための半導体製造装置であって、
複数の絶縁回路基板の形状及び複数のプリント基板の形状をそれぞれ測定する測定部と、
前記複数の絶縁回路基板の形状の測定結果に基づき、前記第1ピンと前記第1半導体チップを接合し、且つ前記第2ピンと前記第2半導体チップを接合するための加熱時における前記複数の絶縁回路基板のそれぞれの反り方向を予測すると共に、前記複数のプリント基板の形状の測定結果に基づき、前記加熱時における前記複数のプリント基板のそれぞれの反り方向を予測するコントローラと、
前記複数の絶縁回路基板及び前記複数のプリント基板から、前記予測された反りが正反りである前記第1絶縁回路基板、前記予測された反りが負反りである前記第2絶縁回路基板、及び前記予測された反りがうねりである前記プリント基板の組み合わせを選択する組立部と、
を備えることを特徴とする半導体製造装置。 - 第1絶縁回路基板と、前記第1絶縁回路基板の上面に搭載された第1半導体チップと、前記第1絶縁回路基板の上方に配置されたプリント基板と、前記プリント基板に挿入され、前記第1絶縁回路基板の上面に一端が接合された第1外部端子と、前記プリント基板に挿入され、前記第1半導体チップの上面に一端が接合された第1ピンと、前記第1絶縁回路基板と離間して配置された第2絶縁回路基板と、前記第2絶縁回路基板の上面に搭載された第2半導体チップと、前記プリント基板に挿入され、前記第2絶縁回路基板の上面に一端が接合された第2外部端子と、前記プリント基板に挿入され、前記第2半導体チップの上面に一端が接合された第2ピンとを備え、前記第1絶縁回路基板及び前記プリント基板が、互いに相補的な反りを有し、前記第2絶縁回路基板及び前記プリント基板が、互いに相補的な反りを有し、前記第1絶縁回路基板が正反りを有し、前記第2絶縁回路基板が負反りを有し、前記プリント基板がうねりを有し、前記プリント基板の前記第1絶縁回路基板に対向する一部が下側に凸であり、前記プリント基板の前記第2絶縁回路基板に対向する一部が上側に凸である半導体装置の製造方法であって、
複数の絶縁回路基板の形状をそれぞれ測定する工程と、
複数のプリント基板の形状をそれぞれ測定する工程と、
前記複数の絶縁回路基板の形状の測定結果に基づき、前記第1ピンと前記第1半導体チップを接合し、且つ前記第2ピンと前記第2半導体チップを接合するための加熱時における前記複数の絶縁回路基板のそれぞれの反り方向を予測する工程と、
前記複数のプリント基板の形状の測定結果に基づき、前記加熱時における前記複数のプリント基板のそれぞれの反り方向を予測する工程と、
前記複数の絶縁回路基板及び前記複数のプリント基板から、前記予測された反りが正反りである前記第1絶縁回路基板、前記予測された反りが負反りである前記第2絶縁回路基板、及び前記予測された反りがうねりである前記プリント基板の組み合わせを選択する工程と、
を含むことを特徴とする半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019209021A JP7409035B2 (ja) | 2019-11-19 | 2019-11-19 | 半導体装置、半導体製造装置及び半導体装置の製造方法 |
US17/093,998 US11552021B2 (en) | 2019-11-19 | 2020-11-10 | Semiconductor device, semiconductor manufacturing apparatus and method of manufacturing semiconductor device having printed circuit board and insulating board with complementary warps |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019209021A JP7409035B2 (ja) | 2019-11-19 | 2019-11-19 | 半導体装置、半導体製造装置及び半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021082708A JP2021082708A (ja) | 2021-05-27 |
JP7409035B2 true JP7409035B2 (ja) | 2024-01-09 |
Family
ID=75909202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019209021A Active JP7409035B2 (ja) | 2019-11-19 | 2019-11-19 | 半導体装置、半導体製造装置及び半導体装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US11552021B2 (ja) |
JP (1) | JP7409035B2 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013118478A (ja) | 2011-12-02 | 2013-06-13 | Samsung Electronics Co Ltd | 情報処理装置及び情報処理方法 |
US20140268603A1 (en) | 2013-03-12 | 2014-09-18 | International Business Machines Corporation | Area array device connection structures with complimentary warp characteristics |
US20140361442A1 (en) | 2013-06-10 | 2014-12-11 | Yong-Kwan Lee | Semiconductor package and method of manufacturing the semiconductor package |
JP2015151235A (ja) | 2014-02-14 | 2015-08-24 | 凸版印刷株式会社 | 塗布装置 |
JP2018011853A (ja) | 2016-07-22 | 2018-01-25 | キヤノン株式会社 | 放射線撮影装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3859963B2 (ja) | 2000-11-29 | 2006-12-20 | シャープ株式会社 | 半導体装置及びその製造方法 |
JP2013157377A (ja) | 2012-01-27 | 2013-08-15 | Fuji Electric Co Ltd | 半導体装置の半田付け方法および半田付け治具 |
WO2013118478A1 (ja) * | 2012-02-09 | 2013-08-15 | 富士電機株式会社 | 半導体装置 |
JP2013232495A (ja) | 2012-04-27 | 2013-11-14 | Mitsubishi Electric Corp | 半導体装置 |
CN104919589B (zh) | 2012-10-15 | 2019-01-29 | 富士电机株式会社 | 半导体装置 |
EP3043379B1 (en) * | 2014-04-01 | 2020-08-05 | Fuji Electric Co., Ltd. | Semiconductor device |
JP2016046509A (ja) | 2014-08-21 | 2016-04-04 | イビデン株式会社 | プリント配線板および半導体パッケージ |
JP6432712B2 (ja) * | 2016-07-11 | 2018-12-05 | 三菱電機株式会社 | 半導体装置 |
JP7214966B2 (ja) * | 2018-03-16 | 2023-01-31 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
-
2019
- 2019-11-19 JP JP2019209021A patent/JP7409035B2/ja active Active
-
2020
- 2020-11-10 US US17/093,998 patent/US11552021B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013118478A (ja) | 2011-12-02 | 2013-06-13 | Samsung Electronics Co Ltd | 情報処理装置及び情報処理方法 |
US20140268603A1 (en) | 2013-03-12 | 2014-09-18 | International Business Machines Corporation | Area array device connection structures with complimentary warp characteristics |
US20140361442A1 (en) | 2013-06-10 | 2014-12-11 | Yong-Kwan Lee | Semiconductor package and method of manufacturing the semiconductor package |
JP2015151235A (ja) | 2014-02-14 | 2015-08-24 | 凸版印刷株式会社 | 塗布装置 |
JP2018011853A (ja) | 2016-07-22 | 2018-01-25 | キヤノン株式会社 | 放射線撮影装置 |
Also Published As
Publication number | Publication date |
---|---|
US20210151378A1 (en) | 2021-05-20 |
US11552021B2 (en) | 2023-01-10 |
JP2021082708A (ja) | 2021-05-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6844621B2 (en) | Semiconductor device and method of relaxing thermal stress | |
JP4692708B2 (ja) | セラミックス回路基板およびパワーモジュール | |
JP5542567B2 (ja) | 半導体装置 | |
CN100390977C (zh) | 半导体器件及其制造方法 | |
US8050054B2 (en) | Electronic device with a base plate | |
JPH104156A (ja) | 半導体装置用絶縁基板及び半導体装置 | |
EP3358615B1 (en) | Silicon nitride circuit board and semiconductor module using same | |
JP6580259B2 (ja) | 電力用半導体装置 | |
JP6849660B2 (ja) | 半導体装置 | |
CN106847781A (zh) | 功率模块封装及其制造方法 | |
JPH11265976A (ja) | パワー半導体モジュールおよびその製造方法 | |
JP4124040B2 (ja) | 半導体装置 | |
JP2000183222A (ja) | 半導体装置およびその製造方法 | |
JP7409035B2 (ja) | 半導体装置、半導体製造装置及び半導体装置の製造方法 | |
JPH10190176A (ja) | 回路基板 | |
JP7233604B2 (ja) | 半導体装置およびその製造方法 | |
JPH10247763A (ja) | 回路基板及びその製造方法 | |
US8503181B2 (en) | Semiconductor device with a zigzag radiator | |
KR20140042683A (ko) | 반도체 유닛 및 그의 제조 방법 | |
JP7310161B2 (ja) | 半導体装置及びその製造方法 | |
JP7230419B2 (ja) | 半導体装置、半導体装置の製造方法 | |
US20050269689A1 (en) | Conductor device and method of manufacturing thereof | |
WO2018164206A1 (ja) | 絶縁回路基板用端子および絶縁回路基板複合体および半導体装置複合体 | |
JPH09307020A (ja) | セラミックパッケージ | |
JPS63224242A (ja) | 熱伝達装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20221014 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230718 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230914 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20231121 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231204 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7409035 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |