JP7403657B2 - コーティング機器及びそのコーティング方法 - Google Patents
コーティング機器及びそのコーティング方法 Download PDFInfo
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- JP7403657B2 JP7403657B2 JP2022537843A JP2022537843A JP7403657B2 JP 7403657 B2 JP7403657 B2 JP 7403657B2 JP 2022537843 A JP2022537843 A JP 2022537843A JP 2022537843 A JP2022537843 A JP 2022537843A JP 7403657 B2 JP7403657 B2 JP 7403657B2
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
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- B05D1/60—Deposition of organic layers from vapour phase
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/62—Plasma-deposition of organic layers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C23C16/5096—Flat-bed apparatus
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
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- H01J37/32761—Continuous moving
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Description
(a)チャンバ体の反応チャンバにおけるモノマー放出ソースとプラズマ励起ソースとの間に前記基材を配置するステップと、
(b)前記プラズマ励起ソースの作用で前記基材の表面にポリマーフィルム層を形成するように、前記モノマー放出ソースによって、フィルム層形成材料を前記反応チャンバに導入するステップと、を含む。
(a)前記基材90を、前記チャンバ体10の前記反応チャンバ11における前記モノマー放出ソース20と前記プラズマ励起ソース30との間の位置に配置するステップと、
(b)前記モノマー放出ソース20によって、前記フィルム層形成材料201を前記反応チャンバ11に導入し、PECVDプロセスを実施することで、前記プラズマ励起ソース30の作用で、前記基材90の前記表面91に前記ポリマーフィルム層92を形成するステップと、を含む。
(A)前記プラズマ励起ソース30から離れた前記モノマー放出ソース20によって、前記フィルム層形成材料201を前記チャンバ体10の前記反応チャンバ11に供給するステップと、
(B)前記モノマー放出ソース20と前記プラズマ励起ソース30との間で前記基材90を移動させるステップと、
(C)前記プラズマ励起ソース30を活性化し、前記基材90に対してプラズマ体処理を行うことで、前記基材90の前記表面91に前記ポリマーフィルム層92を形成するステップと、を含む。
(α)複数の前記基材90によって前記プラズマ励起ソース30B/30Cを取り囲んで、前記基材90の2つの対向側に前記モノマー放出ソース20及び前記プラズマ励起ソース30B/30Cを配置するステップと、
(β)前記フィルム層形成材料201を前記チャンバ体10の前記反応チャンバ11に放出することで、前記プラズマ励起ソース30B/30Cによって前記基材90に対してプラズマ体処理を行うステップと、を含む。
前記コーティングチャンバ710にガスモノマー又はモノマー蒸気を注入するステップであって、前記コーティングチャンバ710は基材を配置するための前記コーティング領域7101を有する、前記コーティングチャンバ710にガスモノマー又はモノマー蒸気を注入するステップと、
前記コーティングチャンバ710内に前記プラズマ体励起場730を発生させるステップと、
前記ガスモノマー又はモノマー蒸気は前記コーティング領域7101を介して前記プラズマ体励起場30に入って、活性化されることで、基材の表面に薄膜を製造するステップと、を含む。
前記コーティングチャンバにガスモノマー又はモノマー蒸気を注入するステップと、
前記コーティングチャンバ内に前記プラズマ体励起場を形成するステップと、
前記プラズマ体励起場に近接又は離間するように、前記スタンドを相対的に移動又は回転させるステップであって、前記スタンドは基材を支持し、基材の表面に薄膜を製造するためのものである、前記プラズマ体励起場に近接又は離間するように、前記スタンドを相対的に移動又は回転させるステップと、を含む。
Claims (26)
- 基材の表面にフィルム層を形成するためのコーティング装置であって、
反応チャンバ、及び当該基材を配置するための基材位置決め領域を有するチャンバ体と、
前記チャンバ体の内壁に隣接する位置に配置された複数のモノマー放出ソースであって、各前記モノマー放出ソースは、フィルム層形成材料を前記チャンバ体の前記反応チャンバに導入するための放出入口を有する、複数の前記モノマー放出ソースと、
前記チャンバ体の前記反応チャンバに配置され、当該フィルム層形成材料を励起するプラズマ励起ソースと、
を含み、
前記基材位置決め領域は、当該基材が前記モノマー放出ソースと前記プラズマ励起ソースとの間に配置されるように、前記モノマー放出ソースと前記プラズマ励起ソースとの間に位置する、
コーティング装置。 - 前記プラズマ励起ソースの放電方式は、直流放電、交流放電、オーディオ放電、無線周波放電、マイクロ波放電、中間周波放電、ペニング放電、火花放電及びパルス放電の組み合わせのうちの1つ又は複数から選択される、請求項1に記載のコーティング装置。
- モノマー供給ユニットをさらに含み、前記モノマー供給ユニットは、当該フィルム層形成材料の原材料を貯蔵するための材料貯蔵器と、原材料を気化させて気化モノマーの当該フィルム層形成材料を形成するための気化器とをさらに含み、又は
モノマー供給ユニットをさらに含み、前記モノマー供給ユニットは、前記モノマー放出ソースに連通し、ガスモノマーの当該フィルム層形成材料を貯蔵するための材料貯蔵器をさらに含む、
請求項1に記載のコーティング装置。 - 当該基材を前記チャンバ体の前記反応チャンバに支持するための支持領域を有する支持フレームをさらに含み、
前記支持フレームの前記支持領域は、当該基材が前記モノマー放出ソースと前記プラズマ励起ソースとの間に配置されるように、前記モノマー放出ソースと前記プラズマ励起ソースとの間に位置する、請求項1に記載のコーティング装置。 - 前記支持フレームは、前記チャンバ体の前記反応チャンバにおいて前記モノマー放出ソースと前記プラズマ励起ソースとの間に装着される、請求項4に記載のコーティング装置。
- 前記支持フレームは、前記チャンバ体の前記反応チャンバにおいて前記モノマー放出ソースと前記プラズマ励起ソースとの間を移動するように操作される、請求項4に記載のコーティング装置。
- 前記支持フレームの移動は、線形運動、曲線運動、摺動運動及び回転運動の組み合わせのうちの1つ又は複数から選択される、請求項6に記載のコーティング装置。
- 前記プラズマ励起ソースは、電力を当該フィルム層形成材料に印加するための電極装置を含み、前記電極装置は、無線周波放電を行うための1対の電極、又は前記反応チャンバ内に延在する平面電極を含む、請求項4に記載のコーティング装置。
- 前記チャンバ体の前記反応チャンバの横断面は、円形、楕円形、多角形の組み合わせのうちの1つから選択される、請求項4に記載のコーティング装置。
- 前記支持フレームは、複数の当該基材を支持するための複数の前記支持領域を含み、複数の前記支持領域は前記プラズマ励起ソースの周囲に配置される、請求項4に記載のコーティング装置。
- 前記支持フレームは複数の前記支持領域を有する担持スタンドを含み、前記担持スタンドは、その中心を軸として前記プラズマ励起ソースの周りに回転するように操作される、請求項10に記載のコーティング装置。
- 前記支持フレームは、前記チャンバ体の中心軸周りに回転するように操作される可動スタンドと、複数の前記支持領域を有しており、前記可動スタンドに配置され、その中心軸周りに前記プラズマ励起ソースの周囲で回転するように操作される担持スタンドと、を含む、請求項10に記載のコーティング装置。
- 前記プラズマ励起ソースは電力を当該フィルム層形成材料に印加するための電極装置を含み、前記電極装置は、正負電極として交互に円周方向に配置される複数の第1電極と複数の第2電極とを含み、各前記第1電極及び前記第2電極はいずれも電極板である、請求項10に記載のコーティング装置。
- 前記プラズマ励起ソースは電力を当該フィルム層形成材料に印加するための電極装置を含み、前記電極装置は、正負電極として複数の第1電極と複数の第2電極とを含み、各前記第1電極及び前記第2電極は円筒電極であり、前記第1電極は前記第2電極の周囲に外嵌される、請求項10に記載のコーティング装置。
- 前記第2電極はさらに、前記チャンバ体の前記反応チャンバの外側に連通する抽気管である、請求項14に記載のコーティング装置。
- 基材の表面にフィルム層を形成するためのコーティング方法であって、
当該基材を、チャンバ体の反応チャンバにおけるモノマー放出ソースとプラズマ励起ソースとの間の位置に配置するステップ(a)と、
前記モノマー放出ソースによって、フィルム層形成材料を前記反応チャンバに導入して、前記プラズマ励起ソースの作用で、当該基材の表面にポリマーフィルム層を形成するステップ(b)と、を含み、
当該基材を、チャンバ体の反応チャンバにおけるモノマー放出ソースとプラズマ励起ソースとの間の位置に配置する前記ステップ(a)は、複数の基材で前記プラズマ励起ソースを取り囲むことを含み、
前記フィルム層形成材料を前記反応チャンバに導入する前に、前記フィルム層形成材料が前記反応チャンバの半径方向において前記プラズマ励起ソースに向かって放出されるように、複数の前記モノマー放出ソースを周方向に配置することを含む、
コーティング方法。 - 当該基材を前記モノマー放出ソースと前記プラズマ励起ソースとの間を繰り返して往復移動させるステップ、又は
前記プラズマ励起ソースの周りに当該基材を回転させるステップ、
をさらに含む、請求項16に記載のコーティング方法。 - 原料を気化させて気化モノマーである当該フィルム層形成材料を形成し、当該フィルム層形成材料を前記モノマー放出ソースに搬送して、当該フィルム層形成材料を前記チャンバ体の前記反応チャンバに供給するステップをさらに含む、請求項16に記載のコーティング方法。
- ガスの当該フィルム層形成材料を前記モノマー放出ソースに搬送して、当該フィルム層形成材料を前記チャンバ体の前記反応チャンバに供給するステップをさらに含む、請求項16に記載のコーティング方法。
- 可動スタンドを前記チャンバ体の中心軸周りに回転させ、前記可動スタンドに装着される担持スタンドによって当該複数の基材を支持するステップをさらに含む、請求項16に記載のコーティング方法。
- 前記担持スタンドを移動させ、前記担持スタンドと前記可動スタンドとを相対移動させるステップをさらに含む、請求項20に記載のコーティング方法。
- 前記担持スタンドは、前記可動スタンドに配置されており、中心軸周りに回転するように操作される、請求項21に記載のコーティング方法。
- コーティングチャンバと、
前記コーティングチャンバに設けられており、基材を支持するための少なくとも1つの支持ユニットを有する少なくとも1つのスタンドであって、コーティング領域に設けられ、前記コーティング領域は、前記コーティングチャンバの中央位置と前記コーティングチャンバの周囲側面との間に位置する、少なくとも1つの前記スタンドと、
前記コーティングチャンバに連通し、前記コーティングチャンバにガスモノマー/モノマー蒸気を導入するための少なくとも1つのモノマーソースであって、前記モノマーソースの供給口は前記コーティングチャンバの前記周囲側面の位置に配置される、少なくとも1つの前記モノマーソースと、
前記コーティングチャンバの中央の領域又は位置に配置され、ガスモノマー/モノマー蒸気を活性化するためのプラズマ体励起場と、
を含み、
前記スタンドの前記支持ユニットは、基材の表面に薄膜を製造するように、前記プラズマ体励起場と相対的に往復して近接及び離間することを特徴とする、
コーティング機器。 - 前記スタンドは、基材を前記プラズマ体励起場と前記モノマーソースとの間で往復移動させるように支持して移動させ、又は往復揺動させ、又は楕円周運動させ、又は球面運動させ、又は遊星運動させるように、配置される、請求項23に記載のコーティング機器。
- 基材の表面にフィルム層を形成するためのコーティング装置であって、
反応チャンバ、及び当該基材を配置するための基材位置決め領域を有するチャンバ体と、
フィルム層形成材料を前記チャンバ体の前記反応チャンバに導入するための放出入口を有するモノマー放出ソースと、
前記チャンバ体の前記反応チャンバに配置され、当該フィルム層形成材料を励起するプラズマ励起ソースと、
当該基材を前記チャンバ体の前記反応チャンバ内で支持するための支持領域を有する支持フレームと、
を含み、
前記基材位置決め領域は、当該基材が前記モノマー放出ソースと前記プラズマ励起ソースとの間に配置されるように、前記モノマー放出ソースと前記プラズマ励起ソースとの間に位置し、
前記支持フレームの前記支持領域は、当該基材が前記モノマー放出ソースと前記プラズマ励起ソースとの間に構成されるように、前記モノマー放出ソースと前記プラズマ励起ソースとの間に位置し、
前記プラズマ励起ソースは、前記チャンバ体に、前記モノマー放出ソースと間隔を持って装着され、又は
前記プラズマ励起ソースは、前記支持フレームに装着され、前記支持フレームにおける前記モノマー放出ソースに対向する側に位置する、
コーティング装置。 - 基材の表面にフィルム層を形成するためのコーティング装置であって、
反応チャンバ、及び当該基材を配置するための基材位置決め領域を有するチャンバ体と、
フィルム層形成材料を前記チャンバ体の前記反応チャンバに導入するための放出入口を有するモノマー放出ソースと、
前記チャンバ体の前記反応チャンバに配置され、当該フィルム層形成材料を励起するプラズマ励起ソースと、
当該基材を前記チャンバ体の前記反応チャンバ内で支持するための支持領域を有する支持フレームと、
を含み、
前記基材位置決め領域は、当該基材が前記モノマー放出ソースと前記プラズマ励起ソースとの間に配置されるように、前記モノマー放出ソースと前記プラズマ励起ソースとの間に位置し、
前記支持フレームの前記支持領域は、当該基材が前記モノマー放出ソースと前記プラズマ励起ソースとの間に構成されるように、前記モノマー放出ソースと前記プラズマ励起ソースとの間に位置し、
前記チャンバ体は2つの対向する側壁を有し、前記モノマー放出ソースと前記プラズマ励起ソースとは、それぞれ前記チャンバ体の前記反応チャンバ内に配置され、互いに対向する2つの前記側壁に隣接する位置に設けられ、又は
前記チャンバ体は2つの隣接する側壁を有し、前記モノマー放出ソースと前記プラズマ励起ソースとは、それぞれ前記チャンバ体の前記反応チャンバ内に配置され、前記チャンバ体の隣接する2つの前記側壁に隣接する位置に設けられる、
コーティング装置。
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JP2023506309A (ja) | 2023-02-15 |
CN112981375A (zh) | 2021-06-18 |
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JP2023506563A (ja) | 2023-02-16 |
CN112981373A (zh) | 2021-06-18 |
CN113412342B (zh) | 2023-04-28 |
EP4079932A1 (en) | 2022-10-26 |
WO2021120540A1 (zh) | 2021-06-24 |
JP7411093B2 (ja) | 2024-01-10 |
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JP2023506577A (ja) | 2023-02-16 |
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