CN109554690A - 一种微波等离子真空镀膜设备及使用方法 - Google Patents
一种微波等离子真空镀膜设备及使用方法 Download PDFInfo
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Abstract
本发明公开了一种微波等离子真空镀膜设备及使用方法,该设备包括微波天线、微波源、进气装置、排气装置、等离子真空腔体和运动装置,真空排气装置设置在等离子真空腔体的外部且通过管道与腔体相连接,微波天线及运动装置设置在等离子真空腔体的内部,微波源设置于腔体外部并与腔体内的微波天线相连。该设备的使用方法包括以下步骤:等离子真空腔体进行抽真空对待镀膜产品进行预处理、镀膜等。本发明采取等离子体化学气相沉积方法提高了镀膜物质的沉降速率和镀膜生产效率,镀膜的均匀性和一致性得到改善,同时也提高涂层的防水、防汗液、防潮、耐腐蚀、耐溶剂等防护效果,可用于各种PCB、PCBA、电子产品、电器零部件、电子半成品、金属、电子元器件、半导体、集成电路板、塑胶制品等镀膜的场合。
Description
技术领域
本发明涉及等离子体化学气相沉积技术领域,特别是涉及一种微波等离子真空镀膜设备及使用方法。
背景技术
等离子体增强化学气相沉PECVD:是借助微波或射频等使含有薄膜组成原子的气体电离,在局部形成等离子体,而等离子体化学活性很强,很容易发生反应,在基片上沉积出所期望的薄膜。为了使化学反应能在较低的温度下进行,利用了等离子体的活性来促进反应,因而这种CVD称为等离子体增强化学气相沉积(PECVD)。实验机理:是借助微波或射频等使含有薄膜组成原子的气体,在局部形成等离子体,而等离子体化学活性很强,很容易发生反应,在基片上沉积出所期望的薄膜。
现有的镀膜设备和方法存在着沉降速率低、生产效率低下,镀膜均匀性和一致性差,涂层的防水、防汗液、防潮、耐腐蚀、耐溶剂等效果差等缺点,镀膜中使用的化学物质等也容易对环境造成污染,这也不符合国家对绿色发展的要求。
发明内容
本发明的目的在于提供一种微波等离子真空镀膜设备及使用方法,微波等离子真空镀膜方法提高了镀膜物质的沉降速率和镀膜生产效率,且增加运动装置使镀膜的均匀性和一致性得到改善,进而提高涂层的防水、防汗液、防潮、耐腐蚀、耐溶剂等防护效果。
为达到上述目的,本发明采用如下技术方案:
一种微波等离子真空镀膜设备,包括微波天线、微波源、进气装置、排气装置、等离子真空腔体和运动装置,真空排气装置设置在等离子真空腔体的外部且通过管道与腔体相连接,微波天线及运动装置设置在等离子真空腔体的内部,微波源设置于腔体外部并与腔体内的微波天线相连。
所述的微波源置于腔体外部,微波天线置于腔体内部且同外部微波源连结,微波天线及微波源有一对或一对以上。
所述的进气装置是外部气体或蒸汽进入腔体内部的通道,进气管道有一个或一个以上。
所述的真空排气装置包括真空泵和排气管,真空泵分一级二级,真空排气装置通过管道和等离子真空腔体相连。
所述的等离子真空腔体为圆筒形腔室、立方体形腔室或球形体腔室,容积为20-1200L。
所述的运动装置可承载放置的一个或一个以上待镀膜产品并可在等离子真空腔体内按设定的运动方式运动,其运动方式包括:空间往复运动、圆周运动、椭圆周运动、球面运动、行星运动、平面往复运到或其它不规则路线。
所述的等离子真空腔体接有真空压力检测计。
一种微波等离子真空镀膜设备的使用方法,包括以下步骤:
A、打开等离子真空腔体,将待镀膜产品放置于运动装置上,关闭等离子真空腔体;
B、启动运行程序,真空排气装置的真空泵连续对等离子真空腔体进行抽真空,当等离子真空腔体内压力达到5-300毫托时,开启运动装置;
C、进气装置通入氧气、氩气、氦气中的一种,进入真空等离子腔体对待镀膜产品进行预处理;
D、预处理完成后,由进气装置通入载气气体和配方气体或载气气体和配方蒸汽,气体或蒸汽进入等离子真空腔体,形成等离子体,然后进行化学气相沉积,开始进行镀膜;
E、镀膜周期结束后,停止通入载气气体和配方气体或载气气体和配方蒸汽,通入惰性气体或空气对等离子真空腔体进行吹扫稀释,然后继续通入空气,使等离子真空腔体的压力与外部大气压相同;运动装置停止,打开等离子真空腔体,将完成镀膜产品取出。
所述的配方气体或配方蒸汽为一种或一种以上,可分别通入,达到多层效果;根据不同产品的镀膜厚度及效果要求,镀膜时间持续30s-9000s。
本发明与其他设备及方法相比具有下述优点:
1、本发明采取等离子体增强化学气相沉方法提高了镀膜物质的沉降速率和镀膜生产效率,镀膜的均匀性和一致性得到改善,同时也提高涂层的防水、防汗液、防潮、耐腐蚀、耐溶剂等防护效果。
2、该发明腔体内带有运动装置,运动装置与设备联动且速度可以调节,带动待镀膜产品运动,采用微波放电方式,效率高,在进行等离子体化学气相沉积过程中,待镀膜产品在运动装置的带动下在腔体内运动,等离子体化学反应产生的聚合产物沉积在标的物表面,生成纳米级膜层,膜层交替沉积,达到防水防潮、耐酸碱盐雾等特性。
3、真空泵由系统软件控制转速以调节腔体内的压力。
4、所述待镀膜产品广泛,为PCB、PCBA、电子产品、电器零部件、电子半成品、金属、电子元器件、半导体、集成电路板、塑胶制品等。
5、根据待镀膜产品特性及要求,决定是否需要预处理,如果产品不需要预处理,配方气体或蒸汽和载气气体直接通入进气管道进入腔体形成等离子体,然后进行化学气相沉积,开始进行镀膜。
6、根据标的物的实际需要,几种配方气体、蒸汽需要交替通入,达到多层效果。
附图说明
以下结合附图和实施例对本发明做进一步说明。
图1是本发明的结构示意图;
图2是实施例2示意图;
具体实施方式
实施例1
一种微波等离子真空镀膜设备,包括微波天线12、微波源11、进气装置6、排气装置2、等离子真空腔体3和运动装置4,真空排气装置设置2在等离子真空腔体3的外部且通过管道与腔体相连接,微波天线12及运动装置4设置在等离子真空腔体3的内部,微波源11设置于腔体外部并与腔体内的微波天线相连。
所述的微波源11置于腔体3外部,微波天线12置于腔体3内部且同外部微波源11连结,微波天线及微波源两对。
所述的进气装置6是外部气体或蒸汽进入腔体内部的通道。
所述的真空排气装置2包括真空泵21和排气管,真空泵21分一级二级,真空排气装置2通过管道和等离子真空腔体3相连。
所述的等离子真空腔体3为圆筒形腔室,容积为300L。
将准备好的待镀产品放置运动装置4上,并设置好在等离子真空腔体3内按圆周运动路线运动。
所述的等离子真空腔体3接有真空压力检测计5。
一种微波等离子真空镀膜设备的使用方法,包括以下步骤:
A、打开等离子真空腔体3,将待镀膜产品放置于运动装置4上,关闭等离子真空腔体3;
B、启动运行程序,真空排气装置2的真空泵21连续对等离子真空腔体3进行抽真空,当等离子真空腔体3内压力达到10-500毫托时,开启运动装置4;
C、进气装置6通入氩气,气体进入真空等离子腔体3对待镀膜产品进行预处理,通气时间1分钟;
D、预处理完成后,由进气装置6通入载气气体和配方气体(镀膜物质气化),气体进入等离子真空腔体3,然后进行化学气相沉积,开始进行镀膜;
E、镀膜周期结束后,停止通入载气气体和配方气体,通入空气对等离子真空腔体3进行吹扫稀释,然后继续通入空气,使等离子真空腔体3的压力与外部大气压相同;运动装置4停止,打开等离子真空腔体3,将完成镀膜产品取出。
所述的配方气体为一种,镀膜时间持续6000s。
实施例2
一种微波等离子真空镀膜设备,包括微波天线12、微波源11、进气装置6、排气装置2、等离子真空腔体3和运动装置4,真空排气装置设置2在等离子真空腔体3的外部且通过管道与腔体相连接,微波天线12及运动装置4设置在等离子真空腔体3的内部,微波源11设置于腔体外部并与腔体内的微波天线相连。
所述的微波源11置于腔体3外部,微波天线12置于腔体3内部且同外部微波源11连结,微波天线及微波源三对。
所述的进气装置6是外部气体或蒸汽进入腔体内部的通道。
所述的真空排气装置2包括真空泵21和排气管,真空泵21分一级二级,真空排气装置2通过管道和等离子真空腔体3相连。
所述的等离子真空腔体3为立方体形腔室,容积为600L。
将准备好的待镀膜产品放置运动装置4上,并设置好在等离子真空腔体3内按空间往复运动路线运动。
所述的等离子真空腔体3接有真空压力检测计5。
一种微波等离子真空镀膜设备的使用方法,包括以下步骤:
A、打开等离子真空腔体3,将待镀膜产品放置于运动装置4上,关闭等离子真空腔体3;
B、启动运行程序,真空排气装置2的真空泵21连续对等离子真空腔体3进行抽真空,当等离子真空腔体3内压力达到10-500毫托时,开启运动装置4;
C、进气装置6通入氩气,气体进入真空等离子腔体3对待镀膜产品进行预处理,通气时间1分钟;
D、预处理完成后,由进气装置6通入载气气体和配方气体(镀膜物质气化),气体进入等离子真空腔体3,然后进行化学气相沉积,开始进行镀膜;
E、镀膜周期结束后,停止通入载气气体和配方气体,通入空气对等离子真空腔体3进行吹扫稀释,然后继续通入空气,使等离子真空腔体3的压力与外部大气压相同;运动装置4停止,打开等离子真空腔体3,将完成镀膜产品取出。
所述的配方气体为三种,镀膜时间持续900s。
虽然以上描述了本发明的具体工艺和实施方式,但是本领域的技术人员应当理解,本发明的保护范围是由所附权利要求书限定的。本领域的技术人员在不背离本发明的原理和实质的前提下,可以对这些实施方式做出多种变更或修改,但这些变更和修改均落入本发明的保护范围。
Claims (9)
1.一种微波等离子真空镀膜设备,其特征在于:包括微波天线、微波源、进气装置、排气装置、等离子真空腔体和运动装置,真空排气装置设置在等离子真空腔体的外部且通过管道与腔体相连接,微波天线及运动装置设置在等离子真空腔体的内部,微波源设置于腔体外部并与腔体内的微波天线相连。
2.根据权利要求1所述的一种微波等离子真空镀膜设备,其特征在于:所述的微波源置于腔体外部,微波天线置于腔体内部且同外部微波源连结,微波天线及微波源有一对或一对以上。
3.根据权利要求1所述的一种微波等离子真空镀膜设备,所述的进气装置是外部气体或蒸汽进入腔体内部的通道,进气管道有一个或一个以上。
4.根据权利要求1所述的一种微波等离子真空镀膜设备,其特征在于:所述的真空排气装置包括真空泵和排气管,真空泵分一级二级,真空排气装置通过管道和等离子真空腔体相连。
5.根据权利要求1所述的一种微波等离子真空镀膜设备,其特征在于:所述的等离子真空腔体为圆筒形腔室、立方体形腔室或球形体腔室,容积为20-1200L。
6.根据权利要求1所述的一种微波等离子真空镀膜设备,其特征在于:所述的运动装置可承载放置的一个或一个以上待镀膜产品并可在等离子真空腔体内按设定的运动方式运动,其运动方式包括:空间往复运动、圆周运动、椭圆周运动、球面运动、行星运动、平面往复运到或其它不规则路线。
7.根据权利要求1所述的一种微波等离子真空镀膜设备,其特征在于:所述的等离子真空腔体外部接有真空压力检测计。
8.根据使用权利要求1所述的一种微波等离子真空镀膜设备的方法,其特征在于:包括以下步骤:
A、打开等离子真空腔体,将待镀膜产品放置于运动装置上,关闭等离子真空腔体;
B、启动运行程序,真空排气装置的真空泵连续对等离子真空腔体进行抽真空,当等离子真空腔体内压力达到5-300毫托时,开启运动装置;
C、进气装置通入氧气、氩气、氦气中的一种,进入真空等离子腔体对待镀膜产品进行预处理;
D、预处理完成后,由进气装置通入载气气体和配方气体或载气气体和配方蒸汽,气体或蒸汽进入等离子真空腔体,形成等离子体,然后进行化学气相沉积,开始进行镀膜;
E、镀膜周期结束后,停止通入载气气体和配方气体或载气气体和配方蒸汽,通入惰性气体或空气对等离子真空腔体进行吹扫稀释,然后继续通入空气,使等离子真空腔体的压力与外部大气压相同;运动装置停止,打开等离子真空腔体,将完成镀膜产品取出。
9.一种使用权利要求1所述的微波等离子真空镀膜设备的方法,其特征在于:所述的配方气体或蒸汽为一种或一种以上,可分别通入,达到多层效果;根据不同产品的镀膜厚度及效果要求,镀膜时间持续30s-9000s。
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