JP7401595B2 - カソードルミネッセンス光学部品の軸合わせのための系および方法 - Google Patents
カソードルミネッセンス光学部品の軸合わせのための系および方法 Download PDFInfo
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- JP7401595B2 JP7401595B2 JP2022082814A JP2022082814A JP7401595B2 JP 7401595 B2 JP7401595 B2 JP 7401595B2 JP 2022082814 A JP2022082814 A JP 2022082814A JP 2022082814 A JP2022082814 A JP 2022082814A JP 7401595 B2 JP7401595 B2 JP 7401595B2
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- 238000000034 method Methods 0.000 title claims description 57
- 238000005136 cathodoluminescence Methods 0.000 claims description 16
- 230000003287 optical effect Effects 0.000 claims description 16
- 238000003384 imaging method Methods 0.000 claims description 6
- 238000004458 analytical method Methods 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims description 3
- 238000001493 electron microscopy Methods 0.000 claims 2
- 238000013178 mathematical model Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 238000004891 communication Methods 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PSNPEOOEWZZFPJ-UHFFFAOYSA-N alumane;yttrium Chemical compound [AlH3].[Y] PSNPEOOEWZZFPJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
- G01N23/2254—Measuring cathodoluminescence
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical, image processing or photographic arrangements associated with the tube
- H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
- H01J37/228—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object whereby illumination or light collection take place in the same area of the discharge
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/2204—Specimen supports therefor; Sample conveying means therefore
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/29—Reflection microscopes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/07—Investigating materials by wave or particle radiation secondary emission
- G01N2223/08—Investigating materials by wave or particle radiation secondary emission incident electron beam and measuring cathode luminescence (U.V.)
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/10—Different kinds of radiation or particles
- G01N2223/102—Different kinds of radiation or particles beta or electrons
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/10—Different kinds of radiation or particles
- G01N2223/104—Different kinds of radiation or particles ions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/30—Accessories, mechanical or electrical features
- G01N2223/303—Accessories, mechanical or electrical features calibrating, standardising
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/024—Moving components not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/049—Focusing means
- H01J2237/0492—Lens systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/21—Focus adjustment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2445—Photon detectors for X-rays, light, e.g. photomultipliers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2803—Scanning microscopes characterised by the imaging method
- H01J2237/2808—Cathodoluminescence
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/282—Determination of microscope properties
- H01J2237/2826—Calibration
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Microscoopes, Condenser (AREA)
- Electron Sources, Ion Sources (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Description
Claims (6)
- 電子顕微鏡系内で生成される電子ビームと一致する垂直軸を有する前記電子顕微鏡系内のカソードルミネッセンス(CL)ミラーの焦点に対する、試料の自動垂直軸合わせのための方法であって、
光源を前記CLミラーを介して所望の試料位置の焦点に投射することと、
前記試料から反射された、前記光源からの光を、前記CLミラーによって検出器に向けることと、
前記検出器によって受け取られた前記反射光を分析することと、
前記試料と前記CLミラーとの間の距離を垂直軸における複数の距離に繰り返し調整し、前記複数の距離の各々での前記反射光を分析し、前記複数の距離での前記反射光の前記分析に基づいて、いつ前記所望の試料位置が前記CLミラー焦点に位置するかを判断することとを含む方法。 - 前記CLミラーが放物面ミラーまたは楕円面ミラーである、請求項1に記載の方法。
- 前記分析が前記複数の距離で前記検出器によって受け取られた前記反射光の強度の測定値に基づく、請求項1に記載の方法。
- 前記検出器が2次元画像デバイスであり、前記分析が、前記複数の距離で前記2次元画像デバイスによって受け取られた前記反射光の形状と、前記CLミラーから、前記CLミラーと同様の光学特性を有する第2のCLミラーから、または前記CLミラーの数学モデルから生成された画像からの、戻り光の事前に保存されたベンチマーク画像との比較に基づく、請求項1に記載の方法。
- 前記複数の距離での強度測定値のカーブフィットに基づいて、前記試料が前記CLミラーの前記焦点にある位置を予測することをさらに含む請求項4に記載の方法。
- 前記複数の距離で2次元画像デバイスによって受け取られた前記反射光の2次元形状を、前記CLミラーと同じ光学特性を有するミラーから受信された反射光の記憶された画像と比較することをさらに含む請求項5に記載の方法。
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JP2022082814A Active JP7401595B2 (ja) | 2019-10-23 | 2022-05-20 | カソードルミネッセンス光学部品の軸合わせのための系および方法 |
JP2023206630A Active JP7541175B2 (ja) | 2019-10-23 | 2023-12-07 | カソードルミネッセンス光学部品の軸合わせのための系および方法 |
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US (1) | US11205559B2 (ja) |
EP (1) | EP3823004A3 (ja) |
JP (3) | JP7097934B2 (ja) |
CN (1) | CN112697831B (ja) |
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EP3823004A3 (en) * | 2019-10-23 | 2021-07-07 | Gatan Inc. | System and method for alignment of cathodoluminescence optics |
JP2023521742A (ja) * | 2020-04-07 | 2023-05-25 | ガタン インコーポレイテッド | 透過型電子顕微鏡カソードルミネッセンスのための装置 |
US20240177962A1 (en) * | 2022-11-30 | 2024-05-30 | Applied Materials Israel Ltd. | Using laser beam for sem base tools, working distance measurement and control working distance sem to target |
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- 2020-10-22 JP JP2020177035A patent/JP7097934B2/ja active Active
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Patent Citations (2)
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JP2007071646A (ja) | 2005-09-06 | 2007-03-22 | National Institute Of Advanced Industrial & Technology | カソードルミネッセンス検出装置 |
US20190198288A1 (en) | 2017-12-27 | 2019-06-27 | Fei Company | Combined sem-cl and fib-ioe microscopy |
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JP2024037815A (ja) | 2024-03-19 |
CN112697831A (zh) | 2021-04-23 |
CN112697831B (zh) | 2024-07-09 |
EP3823004A2 (en) | 2021-05-19 |
EP3823004A3 (en) | 2021-07-07 |
JP2022119864A (ja) | 2022-08-17 |
JP2021068707A (ja) | 2021-04-30 |
US20210125807A1 (en) | 2021-04-29 |
US11205559B2 (en) | 2021-12-21 |
JP7541175B2 (ja) | 2024-08-27 |
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