JP7398554B2 - 基板処理装置及び基板処理方法 - Google Patents

基板処理装置及び基板処理方法 Download PDF

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Publication number
JP7398554B2
JP7398554B2 JP2022516887A JP2022516887A JP7398554B2 JP 7398554 B2 JP7398554 B2 JP 7398554B2 JP 2022516887 A JP2022516887 A JP 2022516887A JP 2022516887 A JP2022516887 A JP 2022516887A JP 7398554 B2 JP7398554 B2 JP 7398554B2
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Japan
Prior art keywords
substrate
removal member
height position
wafer
peripheral edge
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JP2022516887A
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English (en)
Japanese (ja)
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JPWO2021215145A5 (https=
JPWO2021215145A1 (https=
Inventor
陽平 山脇
征二 中野
徳太郎 林
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
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Publication of JPWO2021215145A1 publication Critical patent/JPWO2021215145A1/ja
Publication of JPWO2021215145A5 publication Critical patent/JPWO2021215145A5/ja
Priority to JP2023204420A priority Critical patent/JP7611350B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2022516887A 2020-04-20 2021-03-16 基板処理装置及び基板処理方法 Active JP7398554B2 (ja)

Priority Applications (1)

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JP2023204420A JP7611350B2 (ja) 2020-04-20 2023-12-04 基板処理装置及び基板処理方法

Applications Claiming Priority (3)

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JP2020074921 2020-04-20
JP2020074921 2020-04-20
PCT/JP2021/010662 WO2021215145A1 (ja) 2020-04-20 2021-03-16 基板処理装置及び基板処理方法

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JP2023204420A Division JP7611350B2 (ja) 2020-04-20 2023-12-04 基板処理装置及び基板処理方法

Publications (3)

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JPWO2021215145A1 JPWO2021215145A1 (https=) 2021-10-28
JPWO2021215145A5 JPWO2021215145A5 (https=) 2022-12-22
JP7398554B2 true JP7398554B2 (ja) 2023-12-14

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JP2023204420A Active JP7611350B2 (ja) 2020-04-20 2023-12-04 基板処理装置及び基板処理方法

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US (2) US12543525B2 (https=)
JP (2) JP7398554B2 (https=)
KR (2) KR20250119666A (https=)
CN (1) CN115398599A (https=)
WO (1) WO2021215145A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI855139B (zh) * 2019-10-28 2024-09-11 日商東京威力科創股份有限公司 基板處理方法及基板處理系統
JP2024030643A (ja) * 2022-08-24 2024-03-07 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
JPWO2024241699A1 (https=) * 2023-05-23 2024-11-28
WO2025079432A1 (ja) * 2023-10-10 2025-04-17 東京エレクトロン株式会社 処理方法、処理システム及び検査装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008537316A (ja) 2005-04-19 2008-09-11 株式会社荏原製作所 基板処理装置
US20160093518A1 (en) 2014-09-29 2016-03-31 Samsung Electronics Co., Ltd. Initiator and method for debonding wafer supporting system
WO2019176589A1 (ja) 2018-03-14 2019-09-19 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体
WO2019208359A1 (ja) 2018-04-27 2019-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法
WO2019208298A1 (ja) 2018-04-27 2019-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法
JP3225828U (ja) 2020-01-28 2020-04-09 東京エレクトロン株式会社 回収ボックス

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006093333A (ja) * 2004-09-22 2006-04-06 Disco Abrasive Syst Ltd 切削方法
JP5988765B2 (ja) 2012-08-13 2016-09-07 ダイトエレクトロン株式会社 ウェーハの面取り加工方法、ウェーハの面取り加工装置および砥石角度調整用治具
JP5909453B2 (ja) * 2013-03-07 2016-04-26 東京エレクトロン株式会社 剥離装置、剥離システムおよび剥離方法
JP6182476B2 (ja) * 2014-02-17 2017-08-16 東京エレクトロン株式会社 気泡除去装置、気泡除去方法および接合システム
JP6475071B2 (ja) 2015-04-24 2019-02-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6537992B2 (ja) * 2016-03-30 2019-07-03 東京エレクトロン株式会社 基板処理装置、基板処理装置の制御方法、及び基板処理システム
JP6882033B2 (ja) 2017-03-29 2021-06-02 株式会社東京精密 ウェーハの位置決め装置及びそれを用いた面取り装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008537316A (ja) 2005-04-19 2008-09-11 株式会社荏原製作所 基板処理装置
US20160093518A1 (en) 2014-09-29 2016-03-31 Samsung Electronics Co., Ltd. Initiator and method for debonding wafer supporting system
WO2019176589A1 (ja) 2018-03-14 2019-09-19 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体
WO2019208359A1 (ja) 2018-04-27 2019-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法
WO2019208298A1 (ja) 2018-04-27 2019-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法
JP3225828U (ja) 2020-01-28 2020-04-09 東京エレクトロン株式会社 回収ボックス

Also Published As

Publication number Publication date
CN115398599A (zh) 2022-11-25
US20260123330A1 (en) 2026-04-30
WO2021215145A1 (ja) 2021-10-28
US20230207344A1 (en) 2023-06-29
US12543525B2 (en) 2026-02-03
KR102842163B1 (ko) 2025-08-04
KR20230004673A (ko) 2023-01-06
KR20250119666A (ko) 2025-08-07
JPWO2021215145A1 (https=) 2021-10-28
JP7611350B2 (ja) 2025-01-09
JP2024019282A (ja) 2024-02-08

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