JP7391885B2 - 画像センサ - Google Patents

画像センサ Download PDF

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Publication number
JP7391885B2
JP7391885B2 JP2020569016A JP2020569016A JP7391885B2 JP 7391885 B2 JP7391885 B2 JP 7391885B2 JP 2020569016 A JP2020569016 A JP 2020569016A JP 2020569016 A JP2020569016 A JP 2020569016A JP 7391885 B2 JP7391885 B2 JP 7391885B2
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Japan
Prior art keywords
pixel
pixels
signal
storage node
sample
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JP2020569016A
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English (en)
Japanese (ja)
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JP2021528898A (ja
JP2021528898A5 (https=
JPWO2019239128A5 (https=
Inventor
スコット,アンドリュー
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United Kingdom Research and Innovation
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United Kingdom Research and Innovation
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Publication of JPWO2019239128A5 publication Critical patent/JPWO2019239128A5/ja
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2020569016A 2018-06-12 2019-06-12 画像センサ Active JP7391885B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1809629.7A GB2574619B (en) 2018-06-12 2018-06-12 Image sensor
GB1809629.7 2018-06-12
PCT/GB2019/051624 WO2019239128A1 (en) 2018-06-12 2019-06-12 Image sensor

Publications (4)

Publication Number Publication Date
JP2021528898A JP2021528898A (ja) 2021-10-21
JP2021528898A5 JP2021528898A5 (https=) 2022-06-17
JPWO2019239128A5 JPWO2019239128A5 (https=) 2022-06-17
JP7391885B2 true JP7391885B2 (ja) 2023-12-05

Family

ID=62975538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020569016A Active JP7391885B2 (ja) 2018-06-12 2019-06-12 画像センサ

Country Status (7)

Country Link
US (1) US11627267B2 (https=)
EP (1) EP3808072B1 (https=)
JP (1) JP7391885B2 (https=)
KR (1) KR20210020020A (https=)
CN (1) CN112262569B (https=)
GB (1) GB2574619B (https=)
WO (1) WO2019239128A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3101768B1 (fr) * 2019-10-10 2024-12-20 Teledyne E2V Semiconductors Sas Capteur d’image radiologique intra-oral a pixels actifs et procede de prise d’image associe
EP3930309A1 (en) * 2020-06-26 2021-12-29 ams Sensors Belgium BVBA Pixel and method for operating a pixel
US20220217295A1 (en) * 2021-01-05 2022-07-07 Facebook Technologies, Llc Image sub-sampling with a color grid array
EP4235219A1 (en) 2022-02-28 2023-08-30 Imasenic Advanced Imaging, S.L. Depth scanning image sensor
FR3143931B1 (fr) * 2022-12-20 2026-04-24 Commissariat A Lenergie Atomique Et Aux Energies Alternatives Détection de pulse laser asynchrone et imagerie passive

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001527341A (ja) 1997-12-18 2001-12-25 シメージ オーワイ 放射線を画像化するためのデバイス
JP2002344809A (ja) 2001-05-18 2002-11-29 Canon Inc 撮像装置、撮像装置の駆動方法、放射線撮像装置及びそれを用いた放射線撮像システム
JP2009044486A (ja) 2007-08-09 2009-02-26 Nikon Corp 固体撮像装置、及び、電子カメラ
JP2012248953A (ja) 2011-05-25 2012-12-13 Olympus Corp 固体撮像装置、撮像装置、および信号読み出し方法
JP2013536625A (ja) 2010-07-28 2013-09-19 アイシス イノベイシヨン リミテツド 画像センサーおよび検知方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5336879A (en) * 1993-05-28 1994-08-09 David Sarnoff Research Center, Inc. Pixel array having image forming pixel elements integral with peripheral circuit elements
US5903021A (en) 1997-01-17 1999-05-11 Eastman Kodak Company Partially pinned photodiode for solid state image sensors
US5973311A (en) * 1997-02-12 1999-10-26 Imation Corp Pixel array with high and low resolution mode
AU2154099A (en) * 1997-12-18 1999-07-12 Simage Oy Device for imaging radiation
GB2332585B (en) 1997-12-18 2000-09-27 Simage Oy Device for imaging radiation
US7630011B1 (en) * 1999-03-19 2009-12-08 Aptina Imaging Corporation High-speed sampling of signals in active pixel sensors
EP1351491A1 (en) * 2002-04-02 2003-10-08 STMicroelectronics Limited Reset function for image sensor
US7038820B1 (en) * 2002-04-03 2006-05-02 Eastman Kodak Company Automatic exposure control for an image sensor
JP2004304331A (ja) * 2003-03-28 2004-10-28 Matsushita Electric Ind Co Ltd 固体撮像装置
US7408195B2 (en) * 2003-09-04 2008-08-05 Cypress Semiconductor Corporation (Belgium) Bvba Semiconductor pixel arrays with reduced sensitivity to defects
US20080136933A1 (en) * 2006-12-11 2008-06-12 Digital Imaging Systems Gmbh Apparatus for controlling operation of a multiple photosensor pixel image sensor
GB0709026D0 (en) 2007-05-10 2007-06-20 Isis Innovation High speed imaging with slow scan cameras using pixel level dynami shuttering
EP2587794B1 (en) * 2008-04-07 2022-05-04 Cmosis NV Pixel and pixel array with global shutter
CN102207529A (zh) * 2010-03-31 2011-10-05 比亚迪股份有限公司 一种可判断电池组采样线断线的电压采样装置及采样方法
GB2492387B (en) * 2011-06-30 2017-07-19 Cmosis Nv Pixel array with individual exposure control for a pixel or pixel region
US8953075B2 (en) * 2012-03-30 2015-02-10 Pixim, Inc. CMOS image sensors implementing full frame digital correlated double sampling with global shutter
US9942503B2 (en) * 2016-02-23 2018-04-10 Semiconductor Components Industries, Llc Image sensors having high-efficiency charge storage capabilities
FR3052297A1 (fr) * 2016-06-06 2017-12-08 St Microelectronics Crolles 2 Sas Capteur d'image de type a obturation globale

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001527341A (ja) 1997-12-18 2001-12-25 シメージ オーワイ 放射線を画像化するためのデバイス
JP2002344809A (ja) 2001-05-18 2002-11-29 Canon Inc 撮像装置、撮像装置の駆動方法、放射線撮像装置及びそれを用いた放射線撮像システム
JP2009044486A (ja) 2007-08-09 2009-02-26 Nikon Corp 固体撮像装置、及び、電子カメラ
JP2013536625A (ja) 2010-07-28 2013-09-19 アイシス イノベイシヨン リミテツド 画像センサーおよび検知方法
JP2012248953A (ja) 2011-05-25 2012-12-13 Olympus Corp 固体撮像装置、撮像装置、および信号読み出し方法

Also Published As

Publication number Publication date
GB2574619B (en) 2022-10-12
US11627267B2 (en) 2023-04-11
EP3808072A1 (en) 2021-04-21
GB201809629D0 (en) 2018-07-25
JP2021528898A (ja) 2021-10-21
EP3808072B1 (en) 2025-01-08
KR20210020020A (ko) 2021-02-23
WO2019239128A1 (en) 2019-12-19
CN112262569B (zh) 2024-06-21
CN112262569A (zh) 2021-01-22
US20210258530A1 (en) 2021-08-19
GB2574619A (en) 2019-12-18
EP3808072C0 (en) 2025-01-08

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