CN112262569B - 图像传感器 - Google Patents

图像传感器 Download PDF

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Publication number
CN112262569B
CN112262569B CN201980039016.4A CN201980039016A CN112262569B CN 112262569 B CN112262569 B CN 112262569B CN 201980039016 A CN201980039016 A CN 201980039016A CN 112262569 B CN112262569 B CN 112262569B
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China
Prior art keywords
pixel
pixels
sampling
signal
storage node
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Active
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CN201980039016.4A
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English (en)
Chinese (zh)
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CN112262569A (zh
Inventor
安德鲁·斯科特
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United Kingdom Research and Innovation
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United Kingdom Research and Innovation
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN201980039016.4A 2018-06-12 2019-06-12 图像传感器 Active CN112262569B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1809629.7A GB2574619B (en) 2018-06-12 2018-06-12 Image sensor
GB1809629.7 2018-06-12
PCT/GB2019/051624 WO2019239128A1 (en) 2018-06-12 2019-06-12 Image sensor

Publications (2)

Publication Number Publication Date
CN112262569A CN112262569A (zh) 2021-01-22
CN112262569B true CN112262569B (zh) 2024-06-21

Family

ID=62975538

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980039016.4A Active CN112262569B (zh) 2018-06-12 2019-06-12 图像传感器

Country Status (7)

Country Link
US (1) US11627267B2 (https=)
EP (1) EP3808072B1 (https=)
JP (1) JP7391885B2 (https=)
KR (1) KR20210020020A (https=)
CN (1) CN112262569B (https=)
GB (1) GB2574619B (https=)
WO (1) WO2019239128A1 (https=)

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FR3101768B1 (fr) * 2019-10-10 2024-12-20 Teledyne E2V Semiconductors Sas Capteur d’image radiologique intra-oral a pixels actifs et procede de prise d’image associe
EP3930309A1 (en) * 2020-06-26 2021-12-29 ams Sensors Belgium BVBA Pixel and method for operating a pixel
US20220217295A1 (en) * 2021-01-05 2022-07-07 Facebook Technologies, Llc Image sub-sampling with a color grid array
EP4235219A1 (en) 2022-02-28 2023-08-30 Imasenic Advanced Imaging, S.L. Depth scanning image sensor
FR3143931B1 (fr) * 2022-12-20 2026-04-24 Commissariat A Lenergie Atomique Et Aux Energies Alternatives Détection de pulse laser asynchrone et imagerie passive

Citations (1)

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US5336879A (en) * 1993-05-28 1994-08-09 David Sarnoff Research Center, Inc. Pixel array having image forming pixel elements integral with peripheral circuit elements
US5903021A (en) 1997-01-17 1999-05-11 Eastman Kodak Company Partially pinned photodiode for solid state image sensors
US5973311A (en) * 1997-02-12 1999-10-26 Imation Corp Pixel array with high and low resolution mode
GB2332800B (en) * 1997-12-18 2000-09-27 Simage Oy Device for imaging radiation
GB2332585B (en) 1997-12-18 2000-09-27 Simage Oy Device for imaging radiation
US7630011B1 (en) * 1999-03-19 2009-12-08 Aptina Imaging Corporation High-speed sampling of signals in active pixel sensors
JP4724313B2 (ja) * 2001-05-18 2011-07-13 キヤノン株式会社 撮像装置、放射線撮像装置及びそれを用いた放射線撮像システム
EP1351491A1 (en) * 2002-04-02 2003-10-08 STMicroelectronics Limited Reset function for image sensor
US7038820B1 (en) * 2002-04-03 2006-05-02 Eastman Kodak Company Automatic exposure control for an image sensor
JP2004304331A (ja) * 2003-03-28 2004-10-28 Matsushita Electric Ind Co Ltd 固体撮像装置
US7408195B2 (en) * 2003-09-04 2008-08-05 Cypress Semiconductor Corporation (Belgium) Bvba Semiconductor pixel arrays with reduced sensitivity to defects
US20080136933A1 (en) * 2006-12-11 2008-06-12 Digital Imaging Systems Gmbh Apparatus for controlling operation of a multiple photosensor pixel image sensor
GB0709026D0 (en) 2007-05-10 2007-06-20 Isis Innovation High speed imaging with slow scan cameras using pixel level dynami shuttering
JP5092618B2 (ja) * 2007-08-09 2012-12-05 株式会社ニコン 固体撮像装置、及び、電子カメラ
EP2587794B1 (en) * 2008-04-07 2022-05-04 Cmosis NV Pixel and pixel array with global shutter
CN102207529A (zh) * 2010-03-31 2011-10-05 比亚迪股份有限公司 一种可判断电池组采样线断线的电压采样装置及采样方法
GB201012631D0 (en) * 2010-07-28 2010-09-15 Isis Innovation Image sensor and method of sensing
JP2012248953A (ja) * 2011-05-25 2012-12-13 Olympus Corp 固体撮像装置、撮像装置、および信号読み出し方法
GB2492387B (en) * 2011-06-30 2017-07-19 Cmosis Nv Pixel array with individual exposure control for a pixel or pixel region
US8953075B2 (en) * 2012-03-30 2015-02-10 Pixim, Inc. CMOS image sensors implementing full frame digital correlated double sampling with global shutter
US9942503B2 (en) * 2016-02-23 2018-04-10 Semiconductor Components Industries, Llc Image sensors having high-efficiency charge storage capabilities
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Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
US6252217B1 (en) * 1997-12-18 2001-06-26 Simage Oy Device for imaging radiation

Also Published As

Publication number Publication date
GB2574619B (en) 2022-10-12
US11627267B2 (en) 2023-04-11
EP3808072A1 (en) 2021-04-21
GB201809629D0 (en) 2018-07-25
JP2021528898A (ja) 2021-10-21
EP3808072B1 (en) 2025-01-08
KR20210020020A (ko) 2021-02-23
WO2019239128A1 (en) 2019-12-19
JP7391885B2 (ja) 2023-12-05
CN112262569A (zh) 2021-01-22
US20210258530A1 (en) 2021-08-19
GB2574619A (en) 2019-12-18
EP3808072C0 (en) 2025-01-08

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