JP7389886B2 - フォトレジストリムーバ組成物 - Google Patents

フォトレジストリムーバ組成物 Download PDF

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Publication number
JP7389886B2
JP7389886B2 JP2022500553A JP2022500553A JP7389886B2 JP 7389886 B2 JP7389886 B2 JP 7389886B2 JP 2022500553 A JP2022500553 A JP 2022500553A JP 2022500553 A JP2022500553 A JP 2022500553A JP 7389886 B2 JP7389886 B2 JP 7389886B2
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JP
Japan
Prior art keywords
acid
weight percent
photoresist
substrate
remover composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022500553A
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English (en)
Japanese (ja)
Other versions
JP2022540087A (ja
JP2022540087A5 (https=
Inventor
ウー・ヘンペン
アレント・ローベルト
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Publication of JP2022540087A publication Critical patent/JP2022540087A/ja
Publication of JP2022540087A5 publication Critical patent/JP2022540087A5/ja
Application granted granted Critical
Publication of JP7389886B2 publication Critical patent/JP7389886B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/007—Heating the liquid

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Detergent Compositions (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2022500553A 2019-07-11 2020-07-09 フォトレジストリムーバ組成物 Active JP7389886B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962872950P 2019-07-11 2019-07-11
US62/872,950 2019-07-11
PCT/EP2020/069326 WO2021005140A1 (en) 2019-07-11 2020-07-09 Photoresist remover compositions

Publications (3)

Publication Number Publication Date
JP2022540087A JP2022540087A (ja) 2022-09-14
JP2022540087A5 JP2022540087A5 (https=) 2023-06-06
JP7389886B2 true JP7389886B2 (ja) 2023-11-30

Family

ID=71620411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022500553A Active JP7389886B2 (ja) 2019-07-11 2020-07-09 フォトレジストリムーバ組成物

Country Status (7)

Country Link
US (1) US11994803B2 (https=)
EP (1) EP3997521B1 (https=)
JP (1) JP7389886B2 (https=)
KR (1) KR102609919B1 (https=)
CN (1) CN114080571B (https=)
TW (1) TWI824164B (https=)
WO (1) WO2021005140A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3997521B1 (en) 2019-07-11 2023-08-30 Merck Patent GmbH Photoresist remover compositions
US12374639B2 (en) * 2022-04-04 2025-07-29 Taiwan Semiconductor Manufacturing Co., Ltd. Non-DMSO stripper for advance package metal plating process

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010070724A (ja) 2008-09-22 2010-04-02 Showa Denko Kk 硬化性組成物除去液

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US4511403A (en) * 1979-01-22 1985-04-16 Shipley Company Inc. Immersion tin composition and process for using
JPH0727222B2 (ja) 1987-10-28 1995-03-29 日本合成ゴム株式会社 ホトレジスト用剥離液
US4971715A (en) 1988-11-18 1990-11-20 International Business Machines Corporation Phenolic-free stripping composition and use thereof
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BR9815177B1 (pt) 1997-12-18 2008-11-18 mÉtodo para tratamento de uma superfÍcie pintada e composiÇço de prÉ-revestimento.
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US6551973B1 (en) 2001-10-09 2003-04-22 General Chemical Corporation Stable metal-safe stripper for removing cured negative-tone novolak and acrylic photoresists and post-etch residue
KR100843984B1 (ko) 2002-02-22 2008-07-07 주식회사 동진쎄미켐 감광성 수지 조성물을 제거하기 위한 씬너 조성물
KR100835606B1 (ko) 2002-12-30 2008-06-09 엘지디스플레이 주식회사 구리용 레지스트 제거용 조성물
US8338087B2 (en) 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
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KR20050121923A (ko) 2004-06-23 2005-12-28 삼성에스디아이 주식회사 플라즈마 표시 장치 및 플라즈마 표시 장치의 화상 처리방법
JP4776191B2 (ja) 2004-08-25 2011-09-21 関東化学株式会社 フォトレジスト残渣及びポリマー残渣除去組成物、並びにそれを用いた残渣除去方法
JP4656308B2 (ja) 2005-05-23 2011-03-23 日産化学工業株式会社 反射防止剤固化物の除去用洗浄液および洗浄方法
KR20070023004A (ko) 2005-08-23 2007-02-28 곽병훈 픽셀층 및 포토레지스트 제거액
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US20110253171A1 (en) 2010-04-15 2011-10-20 John Moore Chemical Composition and Methods for Removing Epoxy-Based Photoimageable Coatings Utilized In Microelectronic Fabrication
FR2976290B1 (fr) 2011-06-09 2014-08-15 Jerome Daviot Composition de solutions et conditions d'utilisation permettant le retrait et la dissolution complete de resines photo-lithographiques
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EP3997521B1 (en) 2019-07-11 2023-08-30 Merck Patent GmbH Photoresist remover compositions

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010070724A (ja) 2008-09-22 2010-04-02 Showa Denko Kk 硬化性組成物除去液

Also Published As

Publication number Publication date
CN114080571A (zh) 2022-02-22
WO2021005140A1 (en) 2021-01-14
EP3997521A1 (en) 2022-05-18
CN114080571B (zh) 2025-04-04
US20220276562A1 (en) 2022-09-01
TW202111448A (zh) 2021-03-16
JP2022540087A (ja) 2022-09-14
KR102609919B1 (ko) 2023-12-04
TWI824164B (zh) 2023-12-01
EP3997521B1 (en) 2023-08-30
KR20220034813A (ko) 2022-03-18
US11994803B2 (en) 2024-05-28

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