TWI824164B - 光阻移除劑組合物及自基板移除光阻膜之方法 - Google Patents
光阻移除劑組合物及自基板移除光阻膜之方法 Download PDFInfo
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- TWI824164B TWI824164B TW109123194A TW109123194A TWI824164B TW I824164 B TWI824164 B TW I824164B TW 109123194 A TW109123194 A TW 109123194A TW 109123194 A TW109123194 A TW 109123194A TW I824164 B TWI824164 B TW I824164B
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
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- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
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- GTZCVFVGUGFEME-IWQZZHSRSA-N cis-aconitic acid Chemical compound OC(=O)C\C(C(O)=O)=C\C(O)=O GTZCVFVGUGFEME-IWQZZHSRSA-N 0.000 description 1
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- HCAJEUSONLESMK-UHFFFAOYSA-N cyclohexylsulfamic acid Chemical compound OS(=O)(=O)NC1CCCCC1 HCAJEUSONLESMK-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
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- 238000011010 flushing procedure Methods 0.000 description 1
- IVJISJACKSSFGE-UHFFFAOYSA-N formaldehyde;1,3,5-triazine-2,4,6-triamine Chemical compound O=C.NC1=NC(N)=NC(N)=N1 IVJISJACKSSFGE-UHFFFAOYSA-N 0.000 description 1
- MSYLJRIXVZCQHW-UHFFFAOYSA-N formaldehyde;6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound O=C.NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 MSYLJRIXVZCQHW-UHFFFAOYSA-N 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- ODGAOXROABLFNM-UHFFFAOYSA-N polynoxylin Chemical compound O=C.NC(N)=O ODGAOXROABLFNM-UHFFFAOYSA-N 0.000 description 1
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- 235000010988 polyoxyethylene sorbitan tristearate Nutrition 0.000 description 1
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 1
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- 230000001681 protective effect Effects 0.000 description 1
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- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
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- 125000003011 styrenyl group Chemical group [H]\C(*)=C(/[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid group Chemical class S(N)(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- ODBLHEXUDAPZAU-UHFFFAOYSA-N threo-D-isocitric acid Natural products OC(=O)C(O)C(C(O)=O)CC(O)=O ODBLHEXUDAPZAU-UHFFFAOYSA-N 0.000 description 1
- 229960000790 thymol Drugs 0.000 description 1
- GTZCVFVGUGFEME-UHFFFAOYSA-N trans-aconitic acid Natural products OC(=O)CC(C(O)=O)=CC(O)=O GTZCVFVGUGFEME-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- PHYFQTYBJUILEZ-IUPFWZBJSA-N triolein Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCC(OC(=O)CCCCCCC\C=C/CCCCCCCC)COC(=O)CCCCCCC\C=C/CCCCCCCC PHYFQTYBJUILEZ-IUPFWZBJSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/007—Heating the liquid
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Detergent Compositions (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962872950P | 2019-07-11 | 2019-07-11 | |
| US62/872,950 | 2019-07-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202111448A TW202111448A (zh) | 2021-03-16 |
| TWI824164B true TWI824164B (zh) | 2023-12-01 |
Family
ID=71620411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109123194A TWI824164B (zh) | 2019-07-11 | 2020-07-09 | 光阻移除劑組合物及自基板移除光阻膜之方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11994803B2 (https=) |
| EP (1) | EP3997521B1 (https=) |
| JP (1) | JP7389886B2 (https=) |
| KR (1) | KR102609919B1 (https=) |
| CN (1) | CN114080571B (https=) |
| TW (1) | TWI824164B (https=) |
| WO (1) | WO2021005140A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3997521B1 (en) | 2019-07-11 | 2023-08-30 | Merck Patent GmbH | Photoresist remover compositions |
| US12374639B2 (en) * | 2022-04-04 | 2025-07-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Non-DMSO stripper for advance package metal plating process |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1860508A2 (en) * | 2006-05-26 | 2007-11-28 | Air Products and Chemicals, Inc. | Composition and method for photoresist removal |
| WO2013123317A1 (en) * | 2012-02-15 | 2013-08-22 | Advanced Technology Materials, Inc. | Post-cmp removal using compositions and method of use |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2454399C2 (de) | 1974-11-16 | 1981-09-24 | Merck Patent Gmbh, 6100 Darmstadt | Ablösemittel für Fotolacke |
| CA1116059A (en) | 1978-05-22 | 1982-01-12 | Allied Corporation | Phenol-free and chlorinated hydrocarbon-free photoresist stripper |
| US4511403A (en) * | 1979-01-22 | 1985-04-16 | Shipley Company Inc. | Immersion tin composition and process for using |
| JPH0727222B2 (ja) | 1987-10-28 | 1995-03-29 | 日本合成ゴム株式会社 | ホトレジスト用剥離液 |
| US4971715A (en) | 1988-11-18 | 1990-11-20 | International Business Machines Corporation | Phenolic-free stripping composition and use thereof |
| US5612303B1 (en) * | 1993-06-15 | 2000-07-18 | Nitto Chemical Industry Co Ltd | Solvent composition |
| US6323168B1 (en) | 1996-07-03 | 2001-11-27 | Advanced Technology Materials, Inc. | Post plasma ashing wafer cleaning formulation |
| JPH1055993A (ja) | 1996-08-09 | 1998-02-24 | Hitachi Ltd | 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法 |
| BR9815177B1 (pt) | 1997-12-18 | 2008-11-18 | mÉtodo para tratamento de uma superfÍcie pintada e composiÇço de prÉ-revestimento. | |
| US6231677B1 (en) | 1998-02-27 | 2001-05-15 | Kanto Kagaku Kabushiki Kaisha | Photoresist stripping liquid composition |
| DE19928923A1 (de) | 1999-06-24 | 2000-12-28 | Cognis Deutschland Gmbh | Schaumkontrollierte feste Waschmittel |
| US6576394B1 (en) | 2000-06-16 | 2003-06-10 | Clariant Finance (Bvi) Limited | Negative-acting chemically amplified photoresist composition |
| WO2002023406A1 (en) | 2000-09-18 | 2002-03-21 | Doodlebug Online, Inc. | System and method for accessing data on content servers via a central authorization host |
| US6551973B1 (en) | 2001-10-09 | 2003-04-22 | General Chemical Corporation | Stable metal-safe stripper for removing cured negative-tone novolak and acrylic photoresists and post-etch residue |
| KR100843984B1 (ko) | 2002-02-22 | 2008-07-07 | 주식회사 동진쎄미켐 | 감광성 수지 조성물을 제거하기 위한 씬너 조성물 |
| KR100835606B1 (ko) | 2002-12-30 | 2008-06-09 | 엘지디스플레이 주식회사 | 구리용 레지스트 제거용 조성물 |
| US8338087B2 (en) | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
| KR20050120914A (ko) | 2004-06-21 | 2005-12-26 | 주식회사 동진쎄미켐 | 레지스트 제거용 조성물 |
| KR20050121923A (ko) | 2004-06-23 | 2005-12-28 | 삼성에스디아이 주식회사 | 플라즈마 표시 장치 및 플라즈마 표시 장치의 화상 처리방법 |
| JP4776191B2 (ja) | 2004-08-25 | 2011-09-21 | 関東化学株式会社 | フォトレジスト残渣及びポリマー残渣除去組成物、並びにそれを用いた残渣除去方法 |
| JP4656308B2 (ja) | 2005-05-23 | 2011-03-23 | 日産化学工業株式会社 | 反射防止剤固化物の除去用洗浄液および洗浄方法 |
| KR20070023004A (ko) | 2005-08-23 | 2007-02-28 | 곽병훈 | 픽셀층 및 포토레지스트 제거액 |
| US7601482B2 (en) | 2006-03-28 | 2009-10-13 | Az Electronic Materials Usa Corp. | Negative photoresist compositions |
| US7401515B2 (en) | 2006-03-28 | 2008-07-22 | Honeywell International Inc. | Adaptive circuits and methods for reducing vibration or shock induced errors in inertial sensors |
| WO2009032460A1 (en) * | 2007-08-02 | 2009-03-12 | Advanced Technology Materials, Inc. | Non-fluoride containing composition for the removal of residue from a microelectronic device |
| JP5195063B2 (ja) | 2008-06-19 | 2013-05-08 | 東ソー株式会社 | レジスト剥離液 |
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| FR2976290B1 (fr) | 2011-06-09 | 2014-08-15 | Jerome Daviot | Composition de solutions et conditions d'utilisation permettant le retrait et la dissolution complete de resines photo-lithographiques |
| TWI662379B (zh) | 2013-12-20 | 2019-06-11 | Entegris, Inc. | 移除離子植入抗蝕劑之非氧化強酸類之用途 |
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- 2020-07-09 EP EP20740561.4A patent/EP3997521B1/en active Active
- 2020-07-09 WO PCT/EP2020/069326 patent/WO2021005140A1/en not_active Ceased
- 2020-07-09 TW TW109123194A patent/TWI824164B/zh active
- 2020-07-09 US US17/596,852 patent/US11994803B2/en active Active
- 2020-07-09 KR KR1020227003643A patent/KR102609919B1/ko active Active
- 2020-07-09 JP JP2022500553A patent/JP7389886B2/ja active Active
- 2020-07-09 CN CN202080050038.3A patent/CN114080571B/zh active Active
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| EP1860508A2 (en) * | 2006-05-26 | 2007-11-28 | Air Products and Chemicals, Inc. | Composition and method for photoresist removal |
| TW200801854A (en) * | 2006-05-26 | 2008-01-01 | Air Prod & Chem | Composition and method for photoresist removal |
| WO2013123317A1 (en) * | 2012-02-15 | 2013-08-22 | Advanced Technology Materials, Inc. | Post-cmp removal using compositions and method of use |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114080571A (zh) | 2022-02-22 |
| WO2021005140A1 (en) | 2021-01-14 |
| EP3997521A1 (en) | 2022-05-18 |
| CN114080571B (zh) | 2025-04-04 |
| US20220276562A1 (en) | 2022-09-01 |
| TW202111448A (zh) | 2021-03-16 |
| JP2022540087A (ja) | 2022-09-14 |
| JP7389886B2 (ja) | 2023-11-30 |
| KR102609919B1 (ko) | 2023-12-04 |
| EP3997521B1 (en) | 2023-08-30 |
| KR20220034813A (ko) | 2022-03-18 |
| US11994803B2 (en) | 2024-05-28 |
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