CN114080571B - 光致抗蚀剂去除剂组合物 - Google Patents

光致抗蚀剂去除剂组合物 Download PDF

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Publication number
CN114080571B
CN114080571B CN202080050038.3A CN202080050038A CN114080571B CN 114080571 B CN114080571 B CN 114080571B CN 202080050038 A CN202080050038 A CN 202080050038A CN 114080571 B CN114080571 B CN 114080571B
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CN
China
Prior art keywords
acid
composition
hydrate
substrate
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080050038.3A
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English (en)
Chinese (zh)
Other versions
CN114080571A (zh
Inventor
吴恒鹏
R·阿伦特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Publication of CN114080571A publication Critical patent/CN114080571A/zh
Application granted granted Critical
Publication of CN114080571B publication Critical patent/CN114080571B/zh
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/007—Heating the liquid

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Detergent Compositions (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN202080050038.3A 2019-07-11 2020-07-09 光致抗蚀剂去除剂组合物 Active CN114080571B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962872950P 2019-07-11 2019-07-11
US62/872,950 2019-07-11
PCT/EP2020/069326 WO2021005140A1 (en) 2019-07-11 2020-07-09 Photoresist remover compositions

Publications (2)

Publication Number Publication Date
CN114080571A CN114080571A (zh) 2022-02-22
CN114080571B true CN114080571B (zh) 2025-04-04

Family

ID=71620411

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080050038.3A Active CN114080571B (zh) 2019-07-11 2020-07-09 光致抗蚀剂去除剂组合物

Country Status (7)

Country Link
US (1) US11994803B2 (https=)
EP (1) EP3997521B1 (https=)
JP (1) JP7389886B2 (https=)
KR (1) KR102609919B1 (https=)
CN (1) CN114080571B (https=)
TW (1) TWI824164B (https=)
WO (1) WO2021005140A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3997521B1 (en) 2019-07-11 2023-08-30 Merck Patent GmbH Photoresist remover compositions
US12374639B2 (en) * 2022-04-04 2025-07-29 Taiwan Semiconductor Manufacturing Co., Ltd. Non-DMSO stripper for advance package metal plating process

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2454399C2 (de) 1974-11-16 1981-09-24 Merck Patent Gmbh, 6100 Darmstadt Ablösemittel für Fotolacke
CA1116059A (en) 1978-05-22 1982-01-12 Allied Corporation Phenol-free and chlorinated hydrocarbon-free photoresist stripper
US4511403A (en) * 1979-01-22 1985-04-16 Shipley Company Inc. Immersion tin composition and process for using
JPH0727222B2 (ja) 1987-10-28 1995-03-29 日本合成ゴム株式会社 ホトレジスト用剥離液
US4971715A (en) 1988-11-18 1990-11-20 International Business Machines Corporation Phenolic-free stripping composition and use thereof
US5612303B1 (en) * 1993-06-15 2000-07-18 Nitto Chemical Industry Co Ltd Solvent composition
US6323168B1 (en) 1996-07-03 2001-11-27 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
JPH1055993A (ja) 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
BR9815177B1 (pt) 1997-12-18 2008-11-18 mÉtodo para tratamento de uma superfÍcie pintada e composiÇço de prÉ-revestimento.
US6231677B1 (en) 1998-02-27 2001-05-15 Kanto Kagaku Kabushiki Kaisha Photoresist stripping liquid composition
DE19928923A1 (de) 1999-06-24 2000-12-28 Cognis Deutschland Gmbh Schaumkontrollierte feste Waschmittel
US6576394B1 (en) 2000-06-16 2003-06-10 Clariant Finance (Bvi) Limited Negative-acting chemically amplified photoresist composition
WO2002023406A1 (en) 2000-09-18 2002-03-21 Doodlebug Online, Inc. System and method for accessing data on content servers via a central authorization host
US6551973B1 (en) 2001-10-09 2003-04-22 General Chemical Corporation Stable metal-safe stripper for removing cured negative-tone novolak and acrylic photoresists and post-etch residue
KR100843984B1 (ko) 2002-02-22 2008-07-07 주식회사 동진쎄미켐 감광성 수지 조성물을 제거하기 위한 씬너 조성물
KR100835606B1 (ko) 2002-12-30 2008-06-09 엘지디스플레이 주식회사 구리용 레지스트 제거용 조성물
US8338087B2 (en) 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
KR20050120914A (ko) 2004-06-21 2005-12-26 주식회사 동진쎄미켐 레지스트 제거용 조성물
KR20050121923A (ko) 2004-06-23 2005-12-28 삼성에스디아이 주식회사 플라즈마 표시 장치 및 플라즈마 표시 장치의 화상 처리방법
JP4776191B2 (ja) 2004-08-25 2011-09-21 関東化学株式会社 フォトレジスト残渣及びポリマー残渣除去組成物、並びにそれを用いた残渣除去方法
JP4656308B2 (ja) 2005-05-23 2011-03-23 日産化学工業株式会社 反射防止剤固化物の除去用洗浄液および洗浄方法
KR20070023004A (ko) 2005-08-23 2007-02-28 곽병훈 픽셀층 및 포토레지스트 제거액
US7601482B2 (en) 2006-03-28 2009-10-13 Az Electronic Materials Usa Corp. Negative photoresist compositions
US7401515B2 (en) 2006-03-28 2008-07-22 Honeywell International Inc. Adaptive circuits and methods for reducing vibration or shock induced errors in inertial sensors
US8288330B2 (en) 2006-05-26 2012-10-16 Air Products And Chemicals, Inc. Composition and method for photoresist removal
WO2009032460A1 (en) * 2007-08-02 2009-03-12 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of residue from a microelectronic device
JP5195063B2 (ja) 2008-06-19 2013-05-08 東ソー株式会社 レジスト剥離液
JP2010070724A (ja) 2008-09-22 2010-04-02 Showa Denko Kk 硬化性組成物除去液
US8444768B2 (en) 2009-03-27 2013-05-21 Eastman Chemical Company Compositions and methods for removing organic substances
SG10201405263XA (en) 2009-09-02 2014-11-27 Wako Pure Chem Ind Ltd Resist remover composition and method for removing resist using the composition
US20110253171A1 (en) 2010-04-15 2011-10-20 John Moore Chemical Composition and Methods for Removing Epoxy-Based Photoimageable Coatings Utilized In Microelectronic Fabrication
FR2976290B1 (fr) 2011-06-09 2014-08-15 Jerome Daviot Composition de solutions et conditions d'utilisation permettant le retrait et la dissolution complete de resines photo-lithographiques
SG11201404930SA (en) 2012-02-15 2014-09-26 Advanced Tech Materials Post-cmp removal using compositions and method of use
TWI662379B (zh) 2013-12-20 2019-06-11 Entegris, Inc. 移除離子植入抗蝕劑之非氧化強酸類之用途
TWI676863B (zh) 2014-10-06 2019-11-11 日商東京應化工業股份有限公司 光阻圖型之修整方法
US10613442B2 (en) 2015-03-12 2020-04-07 Merck Patent Gmbh Compositions and methods that promote charge complexing copper protection during low pKa driven polymer stripping
JP6759174B2 (ja) 2016-11-07 2020-09-23 富士フイルム株式会社 処理液及びパターン形成方法
EP3997521B1 (en) 2019-07-11 2023-08-30 Merck Patent GmbH Photoresist remover compositions

Also Published As

Publication number Publication date
CN114080571A (zh) 2022-02-22
WO2021005140A1 (en) 2021-01-14
EP3997521A1 (en) 2022-05-18
US20220276562A1 (en) 2022-09-01
TW202111448A (zh) 2021-03-16
JP2022540087A (ja) 2022-09-14
JP7389886B2 (ja) 2023-11-30
KR102609919B1 (ko) 2023-12-04
TWI824164B (zh) 2023-12-01
EP3997521B1 (en) 2023-08-30
KR20220034813A (ko) 2022-03-18
US11994803B2 (en) 2024-05-28

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