KR102609919B1 - 포토레지스트 리무버 조성물 - Google Patents

포토레지스트 리무버 조성물 Download PDF

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Publication number
KR102609919B1
KR102609919B1 KR1020227003643A KR20227003643A KR102609919B1 KR 102609919 B1 KR102609919 B1 KR 102609919B1 KR 1020227003643 A KR1020227003643 A KR 1020227003643A KR 20227003643 A KR20227003643 A KR 20227003643A KR 102609919 B1 KR102609919 B1 KR 102609919B1
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KR
South Korea
Prior art keywords
acid
weight percent
composition
substrate
photoresist
Prior art date
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KR1020227003643A
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English (en)
Korean (ko)
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KR20220034813A (ko
Inventor
헝펑 우
로버트 애런트
Original Assignee
메르크 파텐트 게엠베하
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Publication of KR20220034813A publication Critical patent/KR20220034813A/ko
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Publication of KR102609919B1 publication Critical patent/KR102609919B1/ko
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/007—Heating the liquid

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Detergent Compositions (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020227003643A 2019-07-11 2020-07-09 포토레지스트 리무버 조성물 Active KR102609919B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962872950P 2019-07-11 2019-07-11
US62/872,950 2019-07-11
PCT/EP2020/069326 WO2021005140A1 (en) 2019-07-11 2020-07-09 Photoresist remover compositions

Publications (2)

Publication Number Publication Date
KR20220034813A KR20220034813A (ko) 2022-03-18
KR102609919B1 true KR102609919B1 (ko) 2023-12-04

Family

ID=71620411

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227003643A Active KR102609919B1 (ko) 2019-07-11 2020-07-09 포토레지스트 리무버 조성물

Country Status (7)

Country Link
US (1) US11994803B2 (https=)
EP (1) EP3997521B1 (https=)
JP (1) JP7389886B2 (https=)
KR (1) KR102609919B1 (https=)
CN (1) CN114080571B (https=)
TW (1) TWI824164B (https=)
WO (1) WO2021005140A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3997521B1 (en) 2019-07-11 2023-08-30 Merck Patent GmbH Photoresist remover compositions
US12374639B2 (en) * 2022-04-04 2025-07-29 Taiwan Semiconductor Manufacturing Co., Ltd. Non-DMSO stripper for advance package metal plating process

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016075904A (ja) 2014-10-06 2016-05-12 東京応化工業株式会社 レジストパターンのトリミング方法
JP2018081307A (ja) 2016-11-07 2018-05-24 富士フイルム株式会社 処理液及びパターン形成方法

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CA1116059A (en) 1978-05-22 1982-01-12 Allied Corporation Phenol-free and chlorinated hydrocarbon-free photoresist stripper
US4511403A (en) * 1979-01-22 1985-04-16 Shipley Company Inc. Immersion tin composition and process for using
JPH0727222B2 (ja) 1987-10-28 1995-03-29 日本合成ゴム株式会社 ホトレジスト用剥離液
US4971715A (en) 1988-11-18 1990-11-20 International Business Machines Corporation Phenolic-free stripping composition and use thereof
US5612303B1 (en) * 1993-06-15 2000-07-18 Nitto Chemical Industry Co Ltd Solvent composition
US6323168B1 (en) 1996-07-03 2001-11-27 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
JPH1055993A (ja) 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
BR9815177B1 (pt) 1997-12-18 2008-11-18 mÉtodo para tratamento de uma superfÍcie pintada e composiÇço de prÉ-revestimento.
US6231677B1 (en) 1998-02-27 2001-05-15 Kanto Kagaku Kabushiki Kaisha Photoresist stripping liquid composition
DE19928923A1 (de) 1999-06-24 2000-12-28 Cognis Deutschland Gmbh Schaumkontrollierte feste Waschmittel
US6576394B1 (en) 2000-06-16 2003-06-10 Clariant Finance (Bvi) Limited Negative-acting chemically amplified photoresist composition
WO2002023406A1 (en) 2000-09-18 2002-03-21 Doodlebug Online, Inc. System and method for accessing data on content servers via a central authorization host
US6551973B1 (en) 2001-10-09 2003-04-22 General Chemical Corporation Stable metal-safe stripper for removing cured negative-tone novolak and acrylic photoresists and post-etch residue
KR100843984B1 (ko) 2002-02-22 2008-07-07 주식회사 동진쎄미켐 감광성 수지 조성물을 제거하기 위한 씬너 조성물
KR100835606B1 (ko) 2002-12-30 2008-06-09 엘지디스플레이 주식회사 구리용 레지스트 제거용 조성물
US8338087B2 (en) 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
KR20050120914A (ko) 2004-06-21 2005-12-26 주식회사 동진쎄미켐 레지스트 제거용 조성물
KR20050121923A (ko) 2004-06-23 2005-12-28 삼성에스디아이 주식회사 플라즈마 표시 장치 및 플라즈마 표시 장치의 화상 처리방법
JP4776191B2 (ja) 2004-08-25 2011-09-21 関東化学株式会社 フォトレジスト残渣及びポリマー残渣除去組成物、並びにそれを用いた残渣除去方法
JP4656308B2 (ja) 2005-05-23 2011-03-23 日産化学工業株式会社 反射防止剤固化物の除去用洗浄液および洗浄方法
KR20070023004A (ko) 2005-08-23 2007-02-28 곽병훈 픽셀층 및 포토레지스트 제거액
US7601482B2 (en) 2006-03-28 2009-10-13 Az Electronic Materials Usa Corp. Negative photoresist compositions
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WO2009032460A1 (en) * 2007-08-02 2009-03-12 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of residue from a microelectronic device
JP5195063B2 (ja) 2008-06-19 2013-05-08 東ソー株式会社 レジスト剥離液
JP2010070724A (ja) 2008-09-22 2010-04-02 Showa Denko Kk 硬化性組成物除去液
US8444768B2 (en) 2009-03-27 2013-05-21 Eastman Chemical Company Compositions and methods for removing organic substances
SG10201405263XA (en) 2009-09-02 2014-11-27 Wako Pure Chem Ind Ltd Resist remover composition and method for removing resist using the composition
US20110253171A1 (en) 2010-04-15 2011-10-20 John Moore Chemical Composition and Methods for Removing Epoxy-Based Photoimageable Coatings Utilized In Microelectronic Fabrication
FR2976290B1 (fr) 2011-06-09 2014-08-15 Jerome Daviot Composition de solutions et conditions d'utilisation permettant le retrait et la dissolution complete de resines photo-lithographiques
SG11201404930SA (en) 2012-02-15 2014-09-26 Advanced Tech Materials Post-cmp removal using compositions and method of use
TWI662379B (zh) 2013-12-20 2019-06-11 Entegris, Inc. 移除離子植入抗蝕劑之非氧化強酸類之用途
US10613442B2 (en) 2015-03-12 2020-04-07 Merck Patent Gmbh Compositions and methods that promote charge complexing copper protection during low pKa driven polymer stripping
EP3997521B1 (en) 2019-07-11 2023-08-30 Merck Patent GmbH Photoresist remover compositions

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016075904A (ja) 2014-10-06 2016-05-12 東京応化工業株式会社 レジストパターンのトリミング方法
JP2018081307A (ja) 2016-11-07 2018-05-24 富士フイルム株式会社 処理液及びパターン形成方法

Also Published As

Publication number Publication date
CN114080571A (zh) 2022-02-22
WO2021005140A1 (en) 2021-01-14
EP3997521A1 (en) 2022-05-18
CN114080571B (zh) 2025-04-04
US20220276562A1 (en) 2022-09-01
TW202111448A (zh) 2021-03-16
JP2022540087A (ja) 2022-09-14
JP7389886B2 (ja) 2023-11-30
TWI824164B (zh) 2023-12-01
EP3997521B1 (en) 2023-08-30
KR20220034813A (ko) 2022-03-18
US11994803B2 (en) 2024-05-28

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