JP7384273B2 - 半導体装置、リザバーコンピューティングシステム及び半導体装置の製造方法 - Google Patents

半導体装置、リザバーコンピューティングシステム及び半導体装置の製造方法 Download PDF

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JP7384273B2
JP7384273B2 JP2022514920A JP2022514920A JP7384273B2 JP 7384273 B2 JP7384273 B2 JP 7384273B2 JP 2022514920 A JP2022514920 A JP 2022514920A JP 2022514920 A JP2022514920 A JP 2022514920A JP 7384273 B2 JP7384273 B2 JP 7384273B2
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semiconductor region
semiconductor
insulating film
nanowire
circuit
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研一 河口
剛 高橋
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Fujitsu Ltd
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    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/04—Architecture, e.g. interconnection topology
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    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
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JP2022514920A 2020-04-15 2020-04-15 半導体装置、リザバーコンピューティングシステム及び半導体装置の製造方法 Active JP7384273B2 (ja)

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Citations (3)

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JP2008511985A (ja) 2004-08-31 2008-04-17 エージェンシー フォー サイエンス，テクノロジー アンド リサーチ ナノ構造体及びそれを製造する方法
JP2013508966A (ja) 2009-10-22 2013-03-07 ソル ヴォルタイクス アーベー ナノワイヤトンネルダイオードおよびその製造方法
JP2016510943A (ja) 2012-12-21 2016-04-11 ソル ヴォルテイックス エービーＳｏｌ Ｖｏｌｔａｉｃｓ Ａｂ 半導体ナノワイヤへの凹んだコンタクト

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JP5652827B2 (ja) * 2009-09-30 2015-01-14 国立大学法人北海道大学 トンネル電界効果トランジスタおよびその製造方法
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Patent Citations (3)

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JP2008511985A (ja) 2004-08-31 2008-04-17 エージェンシー フォー サイエンス，テクノロジー アンド リサーチ ナノ構造体及びそれを製造する方法
JP2013508966A (ja) 2009-10-22 2013-03-07 ソル ヴォルタイクス アーベー ナノワイヤトンネルダイオードおよびその製造方法
JP2016510943A (ja) 2012-12-21 2016-04-11 ソル ヴォルテイックス エービーＳｏｌ Ｖｏｌｔａｉｃｓ Ａｂ 半導体ナノワイヤへの凹んだコンタクト

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Ganjipour et al.，High Current Density Esaki Tunnel Diodes Based on GaSb-InAsSb Heterostructure Nanowires，NANO LETTERS，11，米国，American Chemical Society，2011年09月06日，pp.4222-4226，dx.doi.org/10.1021/nl202180b
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CN115428166B (zh) 2026-04-14
US12363968B2 (en) 2025-07-15
US20230015231A1 (en) 2023-01-19
WO2021210095A1 (ja) 2021-10-21
JPWO2021210095A1 (https=) 2021-10-21
EP4138141A4 (en) 2023-06-07
EP4138141A1 (en) 2023-02-22
CN115428166A (zh) 2022-12-02

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