JPWO2021210095A5 - - Google Patents

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JPWO2021210095A5
JPWO2021210095A5 JP2022514920A JP2022514920A JPWO2021210095A5 JP WO2021210095 A5 JPWO2021210095 A5 JP WO2021210095A5 JP 2022514920 A JP2022514920 A JP 2022514920A JP 2022514920 A JP2022514920 A JP 2022514920A JP WO2021210095 A5 JPWO2021210095 A5 JP WO2021210095A5
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Japan
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semiconductor region
semiconductor
electrodes
forming
insulating film
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JP2022514920A
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Japanese (ja)
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JPWO2021210095A1 (https=
JP7384273B2 (ja
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Priority claimed from PCT/JP2020/016567 external-priority patent/WO2021210095A1/ja
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JP2022514920A 2020-04-15 2020-04-15 半導体装置、リザバーコンピューティングシステム及び半導体装置の製造方法 Active JP7384273B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/016567 WO2021210095A1 (ja) 2020-04-15 2020-04-15 半導体装置、リザバーコンピューティングシステム及び半導体装置の製造方法

Publications (3)

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JPWO2021210095A1 JPWO2021210095A1 (https=) 2021-10-21
JPWO2021210095A5 true JPWO2021210095A5 (https=) 2022-12-02
JP7384273B2 JP7384273B2 (ja) 2023-11-21

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JP2022514920A Active JP7384273B2 (ja) 2020-04-15 2020-04-15 半導体装置、リザバーコンピューティングシステム及び半導体装置の製造方法

Country Status (5)

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US (1) US12363968B2 (https=)
EP (1) EP4138141A4 (https=)
JP (1) JP7384273B2 (https=)
CN (1) CN115428166B (https=)
WO (1) WO2021210095A1 (https=)

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US12592279B2 (en) * 2022-06-28 2026-03-31 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Neural network hardware device and system

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9421138D0 (en) * 1994-10-20 1994-12-07 Hitachi Europ Ltd Memory device
US7335908B2 (en) * 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
JP2008511985A (ja) * 2004-08-31 2008-04-17 エージェンシー フォー サイエンス，テクノロジー アンド リサーチ ナノ構造体及びそれを製造する方法
WO2010062644A2 (en) * 2008-10-28 2010-06-03 The Regents Of The University Of California Vertical group iii-v nanowires on si, heterostructures, flexible arrays and fabrication
JP5652827B2 (ja) * 2009-09-30 2015-01-14 国立大学法人北海道大学 トンネル電界効果トランジスタおよびその製造方法
KR20120099441A (ko) * 2009-10-22 2012-09-10 솔 발테익스 에이비 나노와이어 터널 다이오드 및 이의 제조 방법
EP2378557B1 (en) 2010-04-19 2015-12-23 Imec Method of manufacturing a vertical TFET
CA2864212A1 (en) * 2011-02-10 2012-08-16 The Royal Institution For The Advancement Of Learning/Mcgill University High efficiency broadband semiconductor nanowire devices and methods of fabricating without foreign metal catalysis
CN104603952B (zh) 2012-07-06 2017-07-21 昆南诺股份有限公司 径向纳米线江崎二极管装置和方法
US9012883B2 (en) * 2012-12-21 2015-04-21 Sol Voltaics Ab Recessed contact to semiconductor nanowires
US9730596B2 (en) * 2013-06-28 2017-08-15 Stmicroelectronics, Inc. Low power biological sensing system
DE102016013749A1 (de) * 2016-11-18 2018-05-24 Azur Space Solar Power Gmbh Stapelförmige Halbleiterstruktur

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