JP7374054B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7374054B2
JP7374054B2 JP2020139105A JP2020139105A JP7374054B2 JP 7374054 B2 JP7374054 B2 JP 7374054B2 JP 2020139105 A JP2020139105 A JP 2020139105A JP 2020139105 A JP2020139105 A JP 2020139105A JP 7374054 B2 JP7374054 B2 JP 7374054B2
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Japan
Prior art keywords
buffer layer
layer
type
less
impurity peak
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JP2020139105A
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English (en)
Japanese (ja)
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JP2022035046A (ja
JP2022035046A5 (https=
Inventor
健司 鈴木
康一 西
勝光 中村
則 陳
香次 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2020139105A priority Critical patent/JP7374054B2/ja
Priority to US17/336,012 priority patent/US11545564B2/en
Priority to DE102021119689.2A priority patent/DE102021119689B4/de
Priority to CN202110928731.2A priority patent/CN114078962B/zh
Publication of JP2022035046A publication Critical patent/JP2022035046A/ja
Publication of JP2022035046A5 publication Critical patent/JP2022035046A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/128—Anode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/129—Cathode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2020139105A 2020-08-20 2020-08-20 半導体装置 Active JP7374054B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2020139105A JP7374054B2 (ja) 2020-08-20 2020-08-20 半導体装置
US17/336,012 US11545564B2 (en) 2020-08-20 2021-06-01 Semiconductor device
DE102021119689.2A DE102021119689B4 (de) 2020-08-20 2021-07-29 Halbleitervorrichtung
CN202110928731.2A CN114078962B (zh) 2020-08-20 2021-08-13 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020139105A JP7374054B2 (ja) 2020-08-20 2020-08-20 半導体装置

Publications (3)

Publication Number Publication Date
JP2022035046A JP2022035046A (ja) 2022-03-04
JP2022035046A5 JP2022035046A5 (https=) 2022-10-13
JP7374054B2 true JP7374054B2 (ja) 2023-11-06

Family

ID=80112916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020139105A Active JP7374054B2 (ja) 2020-08-20 2020-08-20 半導体装置

Country Status (4)

Country Link
US (1) US11545564B2 (https=)
JP (1) JP7374054B2 (https=)
CN (1) CN114078962B (https=)
DE (1) DE102021119689B4 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023135916A (ja) * 2022-03-16 2023-09-29 富士電機株式会社 半導体装置
JP2023154929A (ja) * 2022-04-08 2023-10-20 富士電機株式会社 窒化物半導体装置及び窒化物半導体装置の製造方法
JP7672366B2 (ja) * 2022-06-27 2025-05-07 三菱電機株式会社 半導体装置
WO2026058799A1 (ja) * 2024-09-11 2026-03-19 富士電機株式会社 半導体装置および半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014099643A (ja) 2009-11-02 2014-05-29 Fuji Electric Co Ltd 半導体装置
WO2016120999A1 (ja) 2015-01-27 2016-08-04 三菱電機株式会社 半導体装置
JP2019096897A (ja) 2015-06-17 2019-06-20 富士電機株式会社 半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006173297A (ja) * 2004-12-15 2006-06-29 Denso Corp Ｉｇｂｔ
EP2913854B1 (en) 2012-10-23 2020-05-27 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing same
WO2017115434A1 (ja) * 2015-12-28 2017-07-06 三菱電機株式会社 半導体装置、半導体装置の製造方法
JP6508099B2 (ja) * 2016-03-18 2019-05-08 三菱電機株式会社 半導体素子
EP3240040A1 (en) * 2016-04-26 2017-11-01 ABB Schweiz AG Insulated gate bipolar transistor and method for manufacturing such an insulated gate bipolar transistor
JP6832094B2 (ja) * 2016-08-05 2021-02-24 ローム株式会社 パワーモジュール及びモータ駆動回路
JP6784148B2 (ja) * 2016-11-10 2020-11-11 三菱電機株式会社 半導体装置、絶縁ゲート型バイポーラトランジスタ、絶縁ゲート型バイポーラトランジスタの製造方法
JP6964566B2 (ja) 2018-08-17 2021-11-10 三菱電機株式会社 半導体装置およびその製造方法
DE102018123439B4 (de) * 2018-09-24 2020-04-23 Infineon Technologies Ag Leistungshalbleitertransistor, Verfahren zum Verarbeiten eines Leistungshalbleitertransistors und Verfahren zum Produzieren eines Leistungshalbleitertransistors

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014099643A (ja) 2009-11-02 2014-05-29 Fuji Electric Co Ltd 半導体装置
WO2016120999A1 (ja) 2015-01-27 2016-08-04 三菱電機株式会社 半導体装置
JP2019096897A (ja) 2015-06-17 2019-06-20 富士電機株式会社 半導体装置

Also Published As

Publication number Publication date
JP2022035046A (ja) 2022-03-04
US20220059681A1 (en) 2022-02-24
CN114078962B (zh) 2024-09-24
US11545564B2 (en) 2023-01-03
DE102021119689B4 (de) 2024-01-04
DE102021119689A1 (de) 2022-02-24
CN114078962A (zh) 2022-02-22

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