CN114078962B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN114078962B
CN114078962B CN202110928731.2A CN202110928731A CN114078962B CN 114078962 B CN114078962 B CN 114078962B CN 202110928731 A CN202110928731 A CN 202110928731A CN 114078962 B CN114078962 B CN 114078962B
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China
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buffer layer
layer
equal
type
semiconductor device
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CN202110928731.2A
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English (en)
Chinese (zh)
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CN114078962A (zh
Inventor
铃木健司
西康一
中村胜光
陈则
田中香次
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/128—Anode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/129—Cathode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN202110928731.2A 2020-08-20 2021-08-13 半导体装置 Active CN114078962B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020139105A JP7374054B2 (ja) 2020-08-20 2020-08-20 半導体装置
JP2020-139105 2020-08-20

Publications (2)

Publication Number Publication Date
CN114078962A CN114078962A (zh) 2022-02-22
CN114078962B true CN114078962B (zh) 2024-09-24

Family

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CN202110928731.2A Active CN114078962B (zh) 2020-08-20 2021-08-13 半导体装置

Country Status (4)

Country Link
US (1) US11545564B2 (https=)
JP (1) JP7374054B2 (https=)
CN (1) CN114078962B (https=)
DE (1) DE102021119689B4 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023135916A (ja) * 2022-03-16 2023-09-29 富士電機株式会社 半導体装置
JP2023154929A (ja) * 2022-04-08 2023-10-20 富士電機株式会社 窒化物半導体装置及び窒化物半導体装置の製造方法
JP7672366B2 (ja) * 2022-06-27 2025-05-07 三菱電機株式会社 半導体装置
WO2026058799A1 (ja) * 2024-09-11 2026-03-19 富士電機株式会社 半導体装置および半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108074977A (zh) * 2016-11-10 2018-05-25 三菱电机株式会社 半导体装置及其制造方法

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
JP2006173297A (ja) * 2004-12-15 2006-06-29 Denso Corp Ｉｇｂｔ
US8766413B2 (en) * 2009-11-02 2014-07-01 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
EP2913854B1 (en) 2012-10-23 2020-05-27 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing same
US10290711B2 (en) * 2015-01-27 2019-05-14 Mitsubishi Electric Corporation Semiconductor device
CN112490281B (zh) 2015-06-17 2025-02-25 富士电机株式会社 半导体装置
WO2017115434A1 (ja) * 2015-12-28 2017-07-06 三菱電機株式会社 半導体装置、半導体装置の製造方法
JP6508099B2 (ja) * 2016-03-18 2019-05-08 三菱電機株式会社 半導体素子
EP3240040A1 (en) * 2016-04-26 2017-11-01 ABB Schweiz AG Insulated gate bipolar transistor and method for manufacturing such an insulated gate bipolar transistor
JP6832094B2 (ja) * 2016-08-05 2021-02-24 ローム株式会社 パワーモジュール及びモータ駆動回路
JP6964566B2 (ja) 2018-08-17 2021-11-10 三菱電機株式会社 半導体装置およびその製造方法
DE102018123439B4 (de) * 2018-09-24 2020-04-23 Infineon Technologies Ag Leistungshalbleitertransistor, Verfahren zum Verarbeiten eines Leistungshalbleitertransistors und Verfahren zum Produzieren eines Leistungshalbleitertransistors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108074977A (zh) * 2016-11-10 2018-05-25 三菱电机株式会社 半导体装置及其制造方法

Also Published As

Publication number Publication date
JP2022035046A (ja) 2022-03-04
US20220059681A1 (en) 2022-02-24
JP7374054B2 (ja) 2023-11-06
US11545564B2 (en) 2023-01-03
DE102021119689B4 (de) 2024-01-04
DE102021119689A1 (de) 2022-02-24
CN114078962A (zh) 2022-02-22

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