JP2022035046A5 - - Google Patents

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Publication number
JP2022035046A5
JP2022035046A5 JP2020139105A JP2020139105A JP2022035046A5 JP 2022035046 A5 JP2022035046 A5 JP 2022035046A5 JP 2020139105 A JP2020139105 A JP 2020139105A JP 2020139105 A JP2020139105 A JP 2020139105A JP 2022035046 A5 JP2022035046 A5 JP 2022035046A5
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JP
Japan
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buffer layer
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semiconductor device
drift
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JP2020139105A
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English (en)
Japanese (ja)
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JP2022035046A (ja
JP7374054B2 (ja
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Priority to JP2020139105A priority Critical patent/JP7374054B2/ja
Priority claimed from JP2020139105A external-priority patent/JP7374054B2/ja
Priority to US17/336,012 priority patent/US11545564B2/en
Priority to DE102021119689.2A priority patent/DE102021119689B4/de
Priority to CN202110928731.2A priority patent/CN114078962B/zh
Publication of JP2022035046A publication Critical patent/JP2022035046A/ja
Publication of JP2022035046A5 publication Critical patent/JP2022035046A5/ja
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Publication of JP7374054B2 publication Critical patent/JP7374054B2/ja
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JP2020139105A 2020-08-20 2020-08-20 半導体装置 Active JP7374054B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2020139105A JP7374054B2 (ja) 2020-08-20 2020-08-20 半導体装置
US17/336,012 US11545564B2 (en) 2020-08-20 2021-06-01 Semiconductor device
DE102021119689.2A DE102021119689B4 (de) 2020-08-20 2021-07-29 Halbleitervorrichtung
CN202110928731.2A CN114078962B (zh) 2020-08-20 2021-08-13 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020139105A JP7374054B2 (ja) 2020-08-20 2020-08-20 半導体装置

Publications (3)

Publication Number Publication Date
JP2022035046A JP2022035046A (ja) 2022-03-04
JP2022035046A5 true JP2022035046A5 (https=) 2022-10-13
JP7374054B2 JP7374054B2 (ja) 2023-11-06

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ID=80112916

Family Applications (1)

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JP2020139105A Active JP7374054B2 (ja) 2020-08-20 2020-08-20 半導体装置

Country Status (4)

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US (1) US11545564B2 (https=)
JP (1) JP7374054B2 (https=)
CN (1) CN114078962B (https=)
DE (1) DE102021119689B4 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023135916A (ja) * 2022-03-16 2023-09-29 富士電機株式会社 半導体装置
JP2023154929A (ja) * 2022-04-08 2023-10-20 富士電機株式会社 窒化物半導体装置及び窒化物半導体装置の製造方法
JP7672366B2 (ja) * 2022-06-27 2025-05-07 三菱電機株式会社 半導体装置
WO2026058799A1 (ja) * 2024-09-11 2026-03-19 富士電機株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006173297A (ja) * 2004-12-15 2006-06-29 Denso Corp Ｉｇｂｔ
US8766413B2 (en) * 2009-11-02 2014-07-01 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
EP2913854B1 (en) 2012-10-23 2020-05-27 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing same
US10290711B2 (en) * 2015-01-27 2019-05-14 Mitsubishi Electric Corporation Semiconductor device
CN112490281B (zh) 2015-06-17 2025-02-25 富士电机株式会社 半导体装置
WO2017115434A1 (ja) * 2015-12-28 2017-07-06 三菱電機株式会社 半導体装置、半導体装置の製造方法
JP6508099B2 (ja) * 2016-03-18 2019-05-08 三菱電機株式会社 半導体素子
EP3240040A1 (en) * 2016-04-26 2017-11-01 ABB Schweiz AG Insulated gate bipolar transistor and method for manufacturing such an insulated gate bipolar transistor
JP6832094B2 (ja) * 2016-08-05 2021-02-24 ローム株式会社 パワーモジュール及びモータ駆動回路
JP6784148B2 (ja) * 2016-11-10 2020-11-11 三菱電機株式会社 半導体装置、絶縁ゲート型バイポーラトランジスタ、絶縁ゲート型バイポーラトランジスタの製造方法
JP6964566B2 (ja) 2018-08-17 2021-11-10 三菱電機株式会社 半導体装置およびその製造方法
DE102018123439B4 (de) * 2018-09-24 2020-04-23 Infineon Technologies Ag Leistungshalbleitertransistor, Verfahren zum Verarbeiten eines Leistungshalbleitertransistors und Verfahren zum Produzieren eines Leistungshalbleitertransistors

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