JP7344882B2 - 熱電素子およびその製造方法 - Google Patents

熱電素子およびその製造方法 Download PDF

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Publication number
JP7344882B2
JP7344882B2 JP2020540286A JP2020540286A JP7344882B2 JP 7344882 B2 JP7344882 B2 JP 7344882B2 JP 2020540286 A JP2020540286 A JP 2020540286A JP 2020540286 A JP2020540286 A JP 2020540286A JP 7344882 B2 JP7344882 B2 JP 7344882B2
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resin layer
region
metal substrate
disposed
thermoelectric element
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JP2021511668A (ja
JP2021511668A5 (enExample
Inventor
ノ，ミョンレ
イ，ジョンミン
チョ，ヨンサン
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LG Innotek Co Ltd
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LG Innotek Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/856—Thermoelectric active materials comprising organic compositions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2020540286A 2018-01-23 2019-01-22 熱電素子およびその製造方法 Active JP7344882B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020180008423A KR101981629B1 (ko) 2018-01-23 2018-01-23 열전소자 및 그의 제조 방법
KR10-2018-0008423 2018-01-23
PCT/KR2019/000893 WO2019146990A1 (ko) 2018-01-23 2019-01-22 열전소자 및 그의 제조 방법

Publications (3)

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JP2021511668A JP2021511668A (ja) 2021-05-06
JP2021511668A5 JP2021511668A5 (enExample) 2021-06-17
JP7344882B2 true JP7344882B2 (ja) 2023-09-14

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JP2020540286A Active JP7344882B2 (ja) 2018-01-23 2019-01-22 熱電素子およびその製造方法

Country Status (6)

Country Link
US (1) US11417816B2 (enExample)
EP (1) EP3745479B1 (enExample)
JP (1) JP7344882B2 (enExample)
KR (1) KR101981629B1 (enExample)
CN (2) CN111630671B (enExample)
WO (1) WO2019146990A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102618305B1 (ko) * 2019-06-05 2023-12-28 엘지이노텍 주식회사 열전소자
RU2752307C1 (ru) * 2020-01-29 2021-07-26 Общество с ограниченной ответственностью "Термоэлектрические инновационные технологии" Термоэлектрический модуль
US20230183415A1 (en) * 2020-05-14 2023-06-15 Showa Denko Materials Co., Ltd. Primer, substrate equipped with primer layer, method for producing substrate equipped with primer layer, semiconductor device, and method for producing semiconductor device
CN113150599A (zh) * 2021-03-26 2021-07-23 杭州安誉科技有限公司 一种高导热性pcr反应管及其制备工艺

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000164943A (ja) 1998-11-30 2000-06-16 Yamaha Corp 熱電モジュール用基板、その製造方法及び熱電モジュール
JP2000164941A (ja) 1998-11-30 2000-06-16 Yamaha Corp 熱電変換モジュール
JP2003060134A (ja) 2001-08-17 2003-02-28 Polymatech Co Ltd 熱伝導性シート
JP2008053301A (ja) 2006-08-22 2008-03-06 Toshiba Corp 熱電変換モジュール
JP2009117435A (ja) 2007-11-02 2009-05-28 Denso Corp 半導体装置
JP2011144234A (ja) 2010-01-13 2011-07-28 Denki Kagaku Kogyo Kk 熱伝導性樹脂組成物
JP2012238820A (ja) 2011-05-13 2012-12-06 Nitto Denko Corp 熱伝導性シート、絶縁シートおよび放熱部材
JP2013077810A (ja) 2011-09-12 2013-04-25 Yamaha Corp 熱電装置
JP2013161823A (ja) 2012-02-01 2013-08-19 Toyota Industries Corp 熱電変換モジュール
JP2013211471A (ja) 2012-03-30 2013-10-10 Jfe Steel Corp 熱電発電装置
JP2015196823A (ja) 2014-04-03 2015-11-09 三菱電機株式会社 熱硬化性樹脂組成物、熱伝導性樹脂シート及びその製造方法、並びにパワーモジュール
JP2017147267A (ja) 2016-02-15 2017-08-24 株式会社タイセー ペルチェモジュール及びペルチェモジュール装置

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Publication number Priority date Publication date Assignee Title
JP3228784B2 (ja) * 1992-06-02 2001-11-12 株式会社エコ・トゥエンティーワン 熱電変換装置
JPH1084139A (ja) * 1996-09-09 1998-03-31 Technova:Kk 熱電変換装置
JP2990352B2 (ja) * 1998-03-25 1999-12-13 セイコーインスツルメンツ株式会社 熱電素子の製造方法
JP4277325B2 (ja) * 1998-04-28 2009-06-10 アイシン精機株式会社 熱変換装置
JP2001068745A (ja) 1999-08-26 2001-03-16 Nhk Spring Co Ltd 熱電変換モジュール
US9105809B2 (en) * 2007-07-23 2015-08-11 Gentherm Incorporated Segmented thermoelectric device
US20090205695A1 (en) * 2008-02-15 2009-08-20 Tempronics, Inc. Energy Conversion Device
JP5295824B2 (ja) * 2009-03-09 2013-09-18 住友化学株式会社 熱電変換モジュール
JP5366859B2 (ja) * 2010-03-04 2013-12-11 株式会社東芝 窒化珪素基板およびそれを用いた半導体モジュール
KR20140020908A (ko) 2011-03-18 2014-02-19 바스프 에스이 일체형 열전 발전기를 갖는 배기 트레인
JP2013062379A (ja) 2011-09-13 2013-04-04 Nitto Denko Corp 熱伝導性シートおよびその製造方法
KR20130035016A (ko) * 2011-09-29 2013-04-08 삼성전기주식회사 열전 모듈
DE102012210627B4 (de) * 2012-06-22 2016-12-15 Eberspächer Exhaust Technology GmbH & Co. KG Thermoelektrisches Modul, Wärmetauscher, Abgasanlage und Brennkraftmaschine
KR102158578B1 (ko) * 2014-01-08 2020-09-22 엘지이노텍 주식회사 열전모듈 및 이를 포함하는 열전환장치
KR102281065B1 (ko) * 2014-01-23 2021-07-23 엘지이노텍 주식회사 열전모듈 및 이를 포함하는 냉각장치
KR20160118747A (ko) * 2015-04-03 2016-10-12 엘지이노텍 주식회사 열전모듈 및 이를 포함하는 열전환장치
KR20160129637A (ko) * 2015-04-30 2016-11-09 엘지이노텍 주식회사 열전모듈 및 이를 포함하는 열전환장치
KR101875902B1 (ko) * 2016-05-13 2018-07-06 티엠에스테크 주식회사 열전소자 및 열전소자 제조 방법

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000164943A (ja) 1998-11-30 2000-06-16 Yamaha Corp 熱電モジュール用基板、その製造方法及び熱電モジュール
JP2000164941A (ja) 1998-11-30 2000-06-16 Yamaha Corp 熱電変換モジュール
JP2003060134A (ja) 2001-08-17 2003-02-28 Polymatech Co Ltd 熱伝導性シート
JP2008053301A (ja) 2006-08-22 2008-03-06 Toshiba Corp 熱電変換モジュール
JP2009117435A (ja) 2007-11-02 2009-05-28 Denso Corp 半導体装置
JP2011144234A (ja) 2010-01-13 2011-07-28 Denki Kagaku Kogyo Kk 熱伝導性樹脂組成物
JP2012238820A (ja) 2011-05-13 2012-12-06 Nitto Denko Corp 熱伝導性シート、絶縁シートおよび放熱部材
JP2013077810A (ja) 2011-09-12 2013-04-25 Yamaha Corp 熱電装置
JP2013161823A (ja) 2012-02-01 2013-08-19 Toyota Industries Corp 熱電変換モジュール
JP2013211471A (ja) 2012-03-30 2013-10-10 Jfe Steel Corp 熱電発電装置
JP2015196823A (ja) 2014-04-03 2015-11-09 三菱電機株式会社 熱硬化性樹脂組成物、熱伝導性樹脂シート及びその製造方法、並びにパワーモジュール
JP2017147267A (ja) 2016-02-15 2017-08-24 株式会社タイセー ペルチェモジュール及びペルチェモジュール装置

Also Published As

Publication number Publication date
EP3745479A4 (en) 2021-11-17
CN118434250A (zh) 2024-08-02
US20210091293A1 (en) 2021-03-25
WO2019146990A1 (ko) 2019-08-01
KR101981629B1 (ko) 2019-05-24
EP3745479A1 (en) 2020-12-02
JP2021511668A (ja) 2021-05-06
EP3745479B1 (en) 2025-09-24
US11417816B2 (en) 2022-08-16
CN111630671A (zh) 2020-09-04
CN111630671B (zh) 2024-05-24

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