CN111630671B - 热电元件及其制造方法 - Google Patents

热电元件及其制造方法 Download PDF

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Publication number
CN111630671B
CN111630671B CN201980009569.5A CN201980009569A CN111630671B CN 111630671 B CN111630671 B CN 111630671B CN 201980009569 A CN201980009569 A CN 201980009569A CN 111630671 B CN111630671 B CN 111630671B
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China
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resin layer
region
metal substrate
disposed
thermoelectric element
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CN201980009569.5A
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Chinese (zh)
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CN111630671A (zh
Inventor
卢名来
李钟旼
赵容祥
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LG Innotek Co Ltd
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LG Innotek Co Ltd
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Priority to CN202410510951.7A priority Critical patent/CN118434250A/zh
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/81Structural details of the junction
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/855Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/856Thermoelectric active materials comprising organic compositions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
CN201980009569.5A 2018-01-23 2019-01-22 热电元件及其制造方法 Active CN111630671B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202410510951.7A CN118434250A (zh) 2018-01-23 2019-01-22 热电元件及其制造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020180008423A KR101981629B1 (ko) 2018-01-23 2018-01-23 열전소자 및 그의 제조 방법
KR10-2018-0008423 2018-01-23
PCT/KR2019/000893 WO2019146990A1 (ko) 2018-01-23 2019-01-22 열전소자 및 그의 제조 방법

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CN111630671A CN111630671A (zh) 2020-09-04
CN111630671B true CN111630671B (zh) 2024-05-24

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US (1) US11417816B2 (enExample)
EP (1) EP3745479B1 (enExample)
JP (1) JP7344882B2 (enExample)
KR (1) KR101981629B1 (enExample)
CN (2) CN111630671B (enExample)
WO (1) WO2019146990A1 (enExample)

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KR102618305B1 (ko) * 2019-06-05 2023-12-28 엘지이노텍 주식회사 열전소자
RU2752307C1 (ru) * 2020-01-29 2021-07-26 Общество с ограниченной ответственностью "Термоэлектрические инновационные технологии" Термоэлектрический модуль
US20230183415A1 (en) * 2020-05-14 2023-06-15 Showa Denko Materials Co., Ltd. Primer, substrate equipped with primer layer, method for producing substrate equipped with primer layer, semiconductor device, and method for producing semiconductor device
CN113150599A (zh) * 2021-03-26 2021-07-23 杭州安誉科技有限公司 一种高导热性pcr反应管及其制备工艺

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JP2000164941A (ja) * 1998-11-30 2000-06-16 Yamaha Corp 熱電変換モジュール
CN101939661A (zh) * 2008-02-15 2011-01-05 坦普罗尼克斯公司 能量转换器件
EP2894682A2 (en) * 2014-01-08 2015-07-15 LG Innotek Co., Ltd. Thermoelectric module and heat conversion device using the same
CN104810466A (zh) * 2014-01-23 2015-07-29 Lg伊诺特有限公司 热电模块和包括热电模块的热转换装置
KR20160118747A (ko) * 2015-04-03 2016-10-12 엘지이노텍 주식회사 열전모듈 및 이를 포함하는 열전환장치
KR20170127994A (ko) * 2016-05-13 2017-11-22 티엠에스테크 주식회사 열전소자 및 열전소자 제조 방법

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JPH1084139A (ja) * 1996-09-09 1998-03-31 Technova:Kk 熱電変換装置
JP2990352B2 (ja) * 1998-03-25 1999-12-13 セイコーインスツルメンツ株式会社 熱電素子の製造方法
JP4277325B2 (ja) * 1998-04-28 2009-06-10 アイシン精機株式会社 熱変換装置
JP3572968B2 (ja) * 1998-11-30 2004-10-06 ヤマハ株式会社 熱電モジュール用基板、その製造方法及び熱電モジュール
JP2001068745A (ja) 1999-08-26 2001-03-16 Nhk Spring Co Ltd 熱電変換モジュール
JP2003060134A (ja) * 2001-08-17 2003-02-28 Polymatech Co Ltd 熱伝導性シート
JP2008053301A (ja) * 2006-08-22 2008-03-06 Toshiba Corp 熱電変換モジュール
US9105809B2 (en) * 2007-07-23 2015-08-11 Gentherm Incorporated Segmented thermoelectric device
JP4780085B2 (ja) * 2007-11-02 2011-09-28 株式会社デンソー 半導体装置
JP5295824B2 (ja) * 2009-03-09 2013-09-18 住友化学株式会社 熱電変換モジュール
JP5497458B2 (ja) * 2010-01-13 2014-05-21 電気化学工業株式会社 熱伝導性樹脂組成物
JP5366859B2 (ja) * 2010-03-04 2013-12-11 株式会社東芝 窒化珪素基板およびそれを用いた半導体モジュール
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JP2015196823A (ja) * 2014-04-03 2015-11-09 三菱電機株式会社 熱硬化性樹脂組成物、熱伝導性樹脂シート及びその製造方法、並びにパワーモジュール
KR20160129637A (ko) * 2015-04-30 2016-11-09 엘지이노텍 주식회사 열전모듈 및 이를 포함하는 열전환장치
JP6607394B2 (ja) * 2016-02-15 2019-11-20 株式会社タイセー ペルチェモジュール及びペルチェモジュール装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000164941A (ja) * 1998-11-30 2000-06-16 Yamaha Corp 熱電変換モジュール
CN101939661A (zh) * 2008-02-15 2011-01-05 坦普罗尼克斯公司 能量转换器件
EP2894682A2 (en) * 2014-01-08 2015-07-15 LG Innotek Co., Ltd. Thermoelectric module and heat conversion device using the same
CN104810466A (zh) * 2014-01-23 2015-07-29 Lg伊诺特有限公司 热电模块和包括热电模块的热转换装置
KR20160118747A (ko) * 2015-04-03 2016-10-12 엘지이노텍 주식회사 열전모듈 및 이를 포함하는 열전환장치
KR20170127994A (ko) * 2016-05-13 2017-11-22 티엠에스테크 주식회사 열전소자 및 열전소자 제조 방법

Also Published As

Publication number Publication date
EP3745479A4 (en) 2021-11-17
CN118434250A (zh) 2024-08-02
JP7344882B2 (ja) 2023-09-14
US20210091293A1 (en) 2021-03-25
WO2019146990A1 (ko) 2019-08-01
KR101981629B1 (ko) 2019-05-24
EP3745479A1 (en) 2020-12-02
JP2021511668A (ja) 2021-05-06
EP3745479B1 (en) 2025-09-24
US11417816B2 (en) 2022-08-16
CN111630671A (zh) 2020-09-04

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