KR101981629B1 - 열전소자 및 그의 제조 방법 - Google Patents

열전소자 및 그의 제조 방법 Download PDF

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KR101981629B1
KR101981629B1 KR1020180008423A KR20180008423A KR101981629B1 KR 101981629 B1 KR101981629 B1 KR 101981629B1 KR 1020180008423 A KR1020180008423 A KR 1020180008423A KR 20180008423 A KR20180008423 A KR 20180008423A KR 101981629 B1 KR101981629 B1 KR 101981629B1
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metal substrate
resin layer
disposed
inorganic filler
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English (en)
Korean (ko)
Inventor
이종민
조용상
노명래
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엘지이노텍 주식회사
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Priority to KR1020180008423A priority Critical patent/KR101981629B1/ko
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to JP2020540286A priority patent/JP7344882B2/ja
Priority to US16/962,606 priority patent/US11417816B2/en
Priority to EP19743973.0A priority patent/EP3745479B1/en
Priority to CN201980009569.5A priority patent/CN111630671B/zh
Priority to CN202410510951.7A priority patent/CN118434250A/zh
Priority to PCT/KR2019/000893 priority patent/WO2019146990A1/ko
Priority to KR1020190058001A priority patent/KR102310807B1/ko
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Publication of KR101981629B1 publication Critical patent/KR101981629B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H01L35/04—
    • H01L35/22—
    • H01L35/24—
    • H01L35/32—
    • H01L35/34—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/856—Thermoelectric active materials comprising organic compositions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1020180008423A 2018-01-23 2018-01-23 열전소자 및 그의 제조 방법 Active KR101981629B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1020180008423A KR101981629B1 (ko) 2018-01-23 2018-01-23 열전소자 및 그의 제조 방법
US16/962,606 US11417816B2 (en) 2018-01-23 2019-01-22 Thermoelectric element and manufacturing method thereof
EP19743973.0A EP3745479B1 (en) 2018-01-23 2019-01-22 Thermoelectric element
CN201980009569.5A CN111630671B (zh) 2018-01-23 2019-01-22 热电元件及其制造方法
JP2020540286A JP7344882B2 (ja) 2018-01-23 2019-01-22 熱電素子およびその製造方法
CN202410510951.7A CN118434250A (zh) 2018-01-23 2019-01-22 热电元件及其制造方法
PCT/KR2019/000893 WO2019146990A1 (ko) 2018-01-23 2019-01-22 열전소자 및 그의 제조 방법
KR1020190058001A KR102310807B1 (ko) 2018-01-23 2019-05-17 열전소자 및 그의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020180008423A KR101981629B1 (ko) 2018-01-23 2018-01-23 열전소자 및 그의 제조 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020190058001A Division KR102310807B1 (ko) 2018-01-23 2019-05-17 열전소자 및 그의 제조 방법

Publications (1)

Publication Number Publication Date
KR101981629B1 true KR101981629B1 (ko) 2019-05-24

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KR1020180008423A Active KR101981629B1 (ko) 2018-01-23 2018-01-23 열전소자 및 그의 제조 방법

Country Status (6)

Country Link
US (1) US11417816B2 (enExample)
EP (1) EP3745479B1 (enExample)
JP (1) JP7344882B2 (enExample)
KR (1) KR101981629B1 (enExample)
CN (2) CN111630671B (enExample)
WO (1) WO2019146990A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200140015A (ko) * 2019-06-05 2020-12-15 엘지이노텍 주식회사 열전소자
RU2752307C1 (ru) * 2020-01-29 2021-07-26 Общество с ограниченной ответственностью "Термоэлектрические инновационные технологии" Термоэлектрический модуль

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230183415A1 (en) * 2020-05-14 2023-06-15 Showa Denko Materials Co., Ltd. Primer, substrate equipped with primer layer, method for producing substrate equipped with primer layer, semiconductor device, and method for producing semiconductor device
CN113150599A (zh) * 2021-03-26 2021-07-23 杭州安誉科技有限公司 一种高导热性pcr反应管及其制备工艺

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JP2011187511A (ja) * 2010-03-04 2011-09-22 Toshiba Corp 窒化珪素基板およびそれを用いた半導体モジュール
JP2013062379A (ja) * 2011-09-13 2013-04-04 Nitto Denko Corp 熱伝導性シートおよびその製造方法
KR20130035016A (ko) * 2011-09-29 2013-04-08 삼성전기주식회사 열전 모듈
KR20170127994A (ko) * 2016-05-13 2017-11-22 티엠에스테크 주식회사 열전소자 및 열전소자 제조 방법

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JP2990352B2 (ja) * 1998-03-25 1999-12-13 セイコーインスツルメンツ株式会社 熱電素子の製造方法
JP4277325B2 (ja) * 1998-04-28 2009-06-10 アイシン精機株式会社 熱変換装置
JP2000164941A (ja) * 1998-11-30 2000-06-16 Yamaha Corp 熱電変換モジュール
JP3572968B2 (ja) * 1998-11-30 2004-10-06 ヤマハ株式会社 熱電モジュール用基板、その製造方法及び熱電モジュール
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JP2008053301A (ja) * 2006-08-22 2008-03-06 Toshiba Corp 熱電変換モジュール
US9105809B2 (en) * 2007-07-23 2015-08-11 Gentherm Incorporated Segmented thermoelectric device
JP4780085B2 (ja) * 2007-11-02 2011-09-28 株式会社デンソー 半導体装置
US20090205695A1 (en) * 2008-02-15 2009-08-20 Tempronics, Inc. Energy Conversion Device
JP5295824B2 (ja) * 2009-03-09 2013-09-18 住友化学株式会社 熱電変換モジュール
JP5497458B2 (ja) * 2010-01-13 2014-05-21 電気化学工業株式会社 熱伝導性樹脂組成物
KR20140020908A (ko) 2011-03-18 2014-02-19 바스프 에스이 일체형 열전 발전기를 갖는 배기 트레인
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KR102281065B1 (ko) * 2014-01-23 2021-07-23 엘지이노텍 주식회사 열전모듈 및 이를 포함하는 냉각장치
JP2015196823A (ja) * 2014-04-03 2015-11-09 三菱電機株式会社 熱硬化性樹脂組成物、熱伝導性樹脂シート及びその製造方法、並びにパワーモジュール
KR20160118747A (ko) * 2015-04-03 2016-10-12 엘지이노텍 주식회사 열전모듈 및 이를 포함하는 열전환장치
KR20160129637A (ko) * 2015-04-30 2016-11-09 엘지이노텍 주식회사 열전모듈 및 이를 포함하는 열전환장치
JP6607394B2 (ja) * 2016-02-15 2019-11-20 株式会社タイセー ペルチェモジュール及びペルチェモジュール装置

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Publication number Priority date Publication date Assignee Title
JP2011187511A (ja) * 2010-03-04 2011-09-22 Toshiba Corp 窒化珪素基板およびそれを用いた半導体モジュール
JP2013062379A (ja) * 2011-09-13 2013-04-04 Nitto Denko Corp 熱伝導性シートおよびその製造方法
KR20130035016A (ko) * 2011-09-29 2013-04-08 삼성전기주식회사 열전 모듈
KR20170127994A (ko) * 2016-05-13 2017-11-22 티엠에스테크 주식회사 열전소자 및 열전소자 제조 방법

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200140015A (ko) * 2019-06-05 2020-12-15 엘지이노텍 주식회사 열전소자
JP2022535751A (ja) * 2019-06-05 2022-08-10 エルジー イノテック カンパニー リミテッド 熱電素子
KR102618305B1 (ko) * 2019-06-05 2023-12-28 엘지이노텍 주식회사 열전소자
JP7633946B2 (ja) 2019-06-05 2025-02-20 エルジー イノテック カンパニー リミテッド 熱電素子
RU2752307C1 (ru) * 2020-01-29 2021-07-26 Общество с ограниченной ответственностью "Термоэлектрические инновационные технологии" Термоэлектрический модуль

Also Published As

Publication number Publication date
EP3745479A4 (en) 2021-11-17
CN118434250A (zh) 2024-08-02
JP7344882B2 (ja) 2023-09-14
US20210091293A1 (en) 2021-03-25
WO2019146990A1 (ko) 2019-08-01
EP3745479A1 (en) 2020-12-02
JP2021511668A (ja) 2021-05-06
EP3745479B1 (en) 2025-09-24
US11417816B2 (en) 2022-08-16
CN111630671A (zh) 2020-09-04
CN111630671B (zh) 2024-05-24

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