JP7319288B2 - Ｐｅｃｖｄによるｓｉギャップ充填の方法 - Google Patents

Ｐｅｃｖｄによるｓｉギャップ充填の方法 Download PDF

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JP7319288B2
JP7319288B2 JP2020546333A JP2020546333A JP7319288B2 JP 7319288 B2 JP7319288 B2 JP 7319288B2 JP 2020546333 A JP2020546333 A JP 2020546333A JP 2020546333 A JP2020546333 A JP 2020546333A JP 7319288 B2 JP7319288 B2 JP 7319288B2
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amorphous silicon
silicon layer
substrate
depositing
plasma
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JP2021515405A (ja
JP2021515405A5 (https=
JPWO2019173624A5 (https=
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シン リウ，
フェイ ワン，
ルイ チェン，
アブヒジット バス マリック，
ロバート ジャン ヴィッサー，
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Applied Materials Inc
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Applied Materials Inc
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/098—Manufacture or treatment of dielectric parts thereof by filling between adjacent conductive parts
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
  • Chemical Vapour Deposition (AREA)
JP2020546333A 2018-03-09 2019-03-07 Ｐｅｃｖｄによるｓｉギャップ充填の方法 Active JP7319288B2 (ja)

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US62/640,853 2018-03-09
PCT/US2019/021205 WO2019173624A1 (en) 2018-03-09 2019-03-07 A method for si gap fill by pecvd

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US20240420950A1 (en) * 2023-06-14 2024-12-19 Applied Materials, Inc. Densified seam-free silicon-containing material gap fill processes
US20250125145A1 (en) * 2023-10-11 2025-04-17 Applied Materials, Inc. Methods to improve oxide sidewall quality
WO2025248744A1 (ja) * 2024-05-31 2025-12-04 東京エレクトロン株式会社 埋め込み方法及び成膜装置

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