CN112335032B - 用于通过PECVD进行Si间隙填充的方法 - Google Patents

用于通过PECVD进行Si间隙填充的方法 Download PDF

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CN112335032B
CN112335032B CN201980023731.9A CN201980023731A CN112335032B CN 112335032 B CN112335032 B CN 112335032B CN 201980023731 A CN201980023731 A CN 201980023731A CN 112335032 B CN112335032 B CN 112335032B
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amorphous silicon
silicon layer
depositing
substrate
feature
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CN112335032A (zh
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刘鑫
F·王
程睿
A·B·玛里克
R·J·维瑟
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Applied Materials Inc
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Applied Materials Inc
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    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/098—Manufacture or treatment of dielectric parts thereof by filling between adjacent conductive parts
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
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    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
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    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
  • Chemical Vapour Deposition (AREA)
CN201980023731.9A 2018-03-09 2019-03-07 用于通过PECVD进行Si间隙填充的方法 Active CN112335032B (zh)

Applications Claiming Priority (3)

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US201862640853P 2018-03-09 2018-03-09
US62/640,853 2018-03-09
PCT/US2019/021205 WO2019173624A1 (en) 2018-03-09 2019-03-07 A method for si gap fill by pecvd

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CN112335032B true CN112335032B (zh) 2025-04-11

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JP (2) JP7319288B2 (https=)
KR (1) KR102714970B1 (https=)
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US20250125145A1 (en) * 2023-10-11 2025-04-17 Applied Materials, Inc. Methods to improve oxide sidewall quality
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CN103380480A (zh) * 2011-02-23 2013-10-30 国际商业机器公司 用于器件集成的硅的低温选择性外延生长
CN104347353A (zh) * 2013-07-31 2015-02-11 东京毅力科创株式会社 硅膜的成膜方法、薄膜的成膜方法以及截面形状控制方法

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US20200411371A1 (en) 2020-12-31
JP2021515405A (ja) 2021-06-17
KR102714970B1 (ko) 2024-10-07
US20220310448A1 (en) 2022-09-29
CN112335032A (zh) 2021-02-05
SG11202008150VA (en) 2020-09-29
US11848232B2 (en) 2023-12-19
JP7319288B2 (ja) 2023-08-01
JP2023145565A (ja) 2023-10-11
WO2019173624A1 (en) 2019-09-12
JP7580540B2 (ja) 2024-11-11
KR20200120750A (ko) 2020-10-21

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