JP7315665B2 - 発光ダイオードパッケージ - Google Patents
発光ダイオードパッケージ Download PDFInfo
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- JP7315665B2 JP7315665B2 JP2021516523A JP2021516523A JP7315665B2 JP 7315665 B2 JP7315665 B2 JP 7315665B2 JP 2021516523 A JP2021516523 A JP 2021516523A JP 2021516523 A JP2021516523 A JP 2021516523A JP 7315665 B2 JP7315665 B2 JP 7315665B2
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- Prior art keywords
- led
- metal
- metal trace
- submount
- led package
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- 229910052751 metal Inorganic materials 0.000 claims description 295
- 239000002184 metal Substances 0.000 claims description 295
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000005350 fused silica glass Substances 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910021485 fumed silica Inorganic materials 0.000 claims description 6
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- 229910045601 alloy Inorganic materials 0.000 description 24
- 239000000956 alloy Substances 0.000 description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 239000000758 substrate Substances 0.000 description 17
- 239000010949 copper Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 10
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
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- 229910018487 Ni—Cr Inorganic materials 0.000 description 5
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
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- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- -1 titanium tungsten nitride Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- G—PHYSICS
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- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
- G02B19/0009—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only
- G02B19/0014—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only at least one surface having optical power
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
- G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
- G02B19/0061—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED
- G02B19/0066—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED in the form of an LED array
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- G02B27/0938—Using specific optical elements
- G02B27/095—Refractive optical elements
- G02B27/0955—Lenses
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- G—PHYSICS
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- G02B5/00—Optical elements other than lenses
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
Description
[0016]本明細書に組み込まれ、その一部分を形成する添付の図面は、本開示のいくつかの態様を示しており、説明とともに、本開示の原理を説明するのに役立つ。
Claims (17)
- サブマウントと、
前記サブマウント上の金属パターンであって、
第1の金属トレースの第1部分によって形成されるダイ取付パッドと、
前記第1の金属トレースの第2部分によって形成される結合パッドと
を備え、前記第1の金属トレースの第3部分は前記第1の金属トレースの前記第1部分および前記第1の金属トレースの前記第2部分との間で連続している金属パターンと、
前記ダイ取付パッドに実装されたLEDチップと、
前記第1の金属トレースの第2部分上にあり、前記第1の金属トレースの前記第2部分に隣接する前記サブマウントの表面上にある結合金属と、を備え、前記結合金属は、前記第1の金属トレースの前記第3部分の上面に、前記結合パッドに最も近い前記LEDチップのエッジとは異なる前記LEDチップのエッジに隣接する位置まで部分的にのみ延在し、前記結合パッドの上部以外にある導電性フィンガを備える、発光ダイオード(LED)パッケージ。 - 前記サブマウントの前記表面上の前記LEDチップの周囲に配置された光変更材料をさらに備える、請求項1に記載のLEDパッケージ。
- 前記光変更材料は、前記サブマウントの前記表面上の前記結合金属の一部分を覆う、請求項2に記載のLEDパッケージ。
- 前記光変更材料は、光反射材料を備える、請求項2に記載のLEDパッケージ。
- 前記光反射材料は、シリコーンに懸濁された溶融シリカ粒子、ヒュームドシリカ粒子、または二酸化チタン(TiO2)粒子を備える、請求項4に記載のLEDパッケージ。
- 前記LEDチップ上に波長変換要素をさらに備える、請求項1に記載のLEDパッケージ。
- 前記LEDチップの反対側にある前記サブマウントの面上に実装パッドをさらに備える、請求項1に記載のLEDパッケージ。
- 前記金属パターンは、前記LEDチップを個別に試験するように構成された試験タブをさらに備える、請求項1に記載のLEDパッケージ。
- サブマウントと、
前記サブマウント上の金属パターンであって、
第1の金属トレースの第1部分及び第2の金属トレースの第1部分によって形成されるダイ取付パッドであって、前記第1の金属トレースは前記第2の金属トレースと不連続である、ダイ取付パッドと、
前記第1の金属トレースの第2部分によって形成される結合パッドであって、前記第1の金属トレースの第3部分は前記ダイ取付パッドおよび前記結合パッドと連続している、結合パッドと、
を備える金属パターンと、
前記ダイ取付パッドに実装されたLEDチップと、
前記結合パッド上の結合金属とを備え、
前記結合金属は、前記第1の金属トレースの前記第3部分の上面に、前記結合パッドに最も近い前記LEDチップのエッジとは異なる前記LEDチップのエッジに隣接する位置まで部分的にのみ延在し、前記結合パッドの上部以外にある導電性フィンガを備える、発光ダイオード(LED)パッケージ。 - 前記結合金属は、前記結合パッドに隣接する前記サブマウントの表面上にある、請求項9に記載のLEDパッケージ。
- 前記サブマウントの表面上の前記LEDチップの周囲に配置された光変更材料をさらに備える、請求項9に記載のLEDパッケージ。
- 前記光変更材料は、前記導電性フィンガの少なくとも一部分を覆う、請求項11に記載のLEDパッケージ。
- 前記光変更材料は、光反射材料を備える、請求項11に記載のLEDパッケージ。
- 前記光反射材料は、シリコーンに懸濁された溶融シリカ粒子、ヒュームドシリカ粒子、または二酸化チタン(TiO2)粒子を備える、請求項13に記載のLEDパッケージ。
- 前記LEDチップ上に波長変換要素をさらに備える、請求項9に記載のLEDパッケージ。
- 前記結合パッドの側壁上の、および、前記結合パッドに隣接する前記サブマウントの表面上の、腐食低減層をさらに備える、請求項9に記載の発光ダイオード(LED)パッケージ。
- 前記第1の金属トレースと不連続である第2の金属トレースと、
前記第1の金属トレースと前記第2の金属トレースと不連続である第3の金属トレースと、
前記第1の金属トレースと前記第3の金属トレースに取り付けられる第1のESDチップと
前記第2の金属トレースと前記第3の金属トレースに電気的に接続される第2のESDチップ
をさらに備え、前記第1のESDチップと前記第2のESDチップはそれぞれ前記第1の金属トレースと前記第2の金属トレースとの間に電気的に直列に接続される、
請求項1に記載のLEDパッケージ。
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