JP7314269B2 - 積層体および積層体の製造方法 - Google Patents

積層体および積層体の製造方法 Download PDF

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JP7314269B2
JP7314269B2 JP2021527749A JP2021527749A JP7314269B2 JP 7314269 B2 JP7314269 B2 JP 7314269B2 JP 2021527749 A JP2021527749 A JP 2021527749A JP 2021527749 A JP2021527749 A JP 2021527749A JP 7314269 B2 JP7314269 B2 JP 7314269B2
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semiconductor element
manufacturing
support substrate
substrate
laminate according
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JPWO2020262560A5 (https=
JPWO2020262560A1 (https=
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賢太郎 村川
克明 正木
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0205—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth during growth of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H10P14/272—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition using mask materials other than SiO2 or SiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2908—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0203—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Dicing (AREA)
JP2021527749A 2019-06-26 2020-06-25 積層体および積層体の製造方法 Active JP7314269B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019119035 2019-06-26
JP2019119035 2019-06-26
PCT/JP2020/025107 WO2020262560A1 (ja) 2019-06-26 2020-06-25 積層体および積層体の製造方法

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JPWO2020262560A1 JPWO2020262560A1 (https=) 2020-12-30
JPWO2020262560A5 JPWO2020262560A5 (https=) 2022-05-10
JP7314269B2 true JP7314269B2 (ja) 2023-07-25

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US (1) US20220415714A1 (https=)
EP (1) EP3993010A4 (https=)
JP (1) JP7314269B2 (https=)
WO (1) WO2020262560A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7314269B2 (ja) * 2019-06-26 2023-07-25 京セラ株式会社 積層体および積層体の製造方法
JP7638382B2 (ja) * 2021-07-30 2025-03-03 京セラ株式会社 半導体デバイスの製造方法、テンプレート基板、半導体デバイス、電子機器、および半導体デバイスの製造装置
US20250112439A1 (en) * 2022-01-27 2025-04-03 Kyocera Corporation Manufacturing method and manufacturing apparatus for laser element, laser element, and electronic device
JP7813820B2 (ja) * 2022-02-10 2026-02-13 京セラ株式会社 レーザ素子の製造方法および製造装置
US20250212575A1 (en) * 2022-03-28 2025-06-26 Kyocera Corporation Light-emitting element, and method and device for manufacturing same

Citations (8)

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Publication number Priority date Publication date Assignee Title
JP2002270543A (ja) 2001-03-14 2002-09-20 Sony Corp 基板の分割方法
JP2008016628A (ja) 2006-07-05 2008-01-24 Sharp Corp 半導体装置及びその製造方法
JP2011077418A (ja) 2009-09-30 2011-04-14 Nec Corp 半導体素子、半導体ウェハ、半導体ウェハの製造方法、半導体素子の製造方法
JP2011100767A (ja) 2009-11-04 2011-05-19 Stanley Electric Co Ltd 半導体発光素子の製造方法
JP2011243857A (ja) 2010-05-20 2011-12-01 Nec Corp 半導体基板の製造方法
JP2018037426A (ja) 2015-01-20 2018-03-08 三菱電機株式会社 レーザ光源装置およびその製造方法
JP2018185502A (ja) 2017-04-25 2018-11-22 ルーメンス カンパニー リミテッド マイクロｌｅｄディスプレイ装置及びその製造方法
WO2020262560A1 (ja) 2019-06-26 2020-12-30 京セラ株式会社 積層体および積層体の製造方法

Family Cites Families (7)

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Publication number Priority date Publication date Assignee Title
DE69204828T2 (de) * 1992-06-09 1996-05-02 Ibm Herstellung von Laserdioden mit durch Spaltung erzeugten Stirnflächen auf einem vollständigen Wafer.
JP3054344B2 (ja) * 1995-06-29 2000-06-19 旭化成工業株式会社 難燃剤組成物
JPH10223992A (ja) * 1997-01-31 1998-08-21 Oki Electric Ind Co Ltd 半導体素子製造方法
JP4845790B2 (ja) * 2007-03-30 2011-12-28 三洋電機株式会社 半導体レーザ素子およびその製造方法
JP2009231820A (ja) * 2008-02-29 2009-10-08 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法
JP2009253062A (ja) * 2008-04-08 2009-10-29 Sanyo Electric Co Ltd 半導体素子の製造方法および半導体素子
JP6561566B2 (ja) * 2015-04-30 2019-08-21 三星ダイヤモンド工業株式会社 貼り合わせ基板の分割方法及び分割装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002270543A (ja) 2001-03-14 2002-09-20 Sony Corp 基板の分割方法
JP2008016628A (ja) 2006-07-05 2008-01-24 Sharp Corp 半導体装置及びその製造方法
JP2011077418A (ja) 2009-09-30 2011-04-14 Nec Corp 半導体素子、半導体ウェハ、半導体ウェハの製造方法、半導体素子の製造方法
JP2011100767A (ja) 2009-11-04 2011-05-19 Stanley Electric Co Ltd 半導体発光素子の製造方法
JP2011243857A (ja) 2010-05-20 2011-12-01 Nec Corp 半導体基板の製造方法
JP2018037426A (ja) 2015-01-20 2018-03-08 三菱電機株式会社 レーザ光源装置およびその製造方法
JP2018185502A (ja) 2017-04-25 2018-11-22 ルーメンス カンパニー リミテッド マイクロｌｅｄディスプレイ装置及びその製造方法
WO2020262560A1 (ja) 2019-06-26 2020-12-30 京セラ株式会社 積層体および積層体の製造方法

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EP3993010A1 (en) 2022-05-04
US20220415714A1 (en) 2022-12-29
WO2020262560A1 (ja) 2020-12-30
EP3993010A4 (en) 2023-11-29
JPWO2020262560A1 (https=) 2020-12-30

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