JP7307856B2 - 電力増幅用半導体装置 - Google Patents

電力増幅用半導体装置 Download PDF

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Publication number
JP7307856B2
JP7307856B2 JP2022522175A JP2022522175A JP7307856B2 JP 7307856 B2 JP7307856 B2 JP 7307856B2 JP 2022522175 A JP2022522175 A JP 2022522175A JP 2022522175 A JP2022522175 A JP 2022522175A JP 7307856 B2 JP7307856 B2 JP 7307856B2
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field plate
source field
nitride semiconductor
electrode
source
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JPWO2021230283A1 (https=
JPWO2021230283A5 (https=
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克彦 川島
裕介 神田
賢一 宮島
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Nuvoton Technology Corp Japan
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Nuvoton Technology Corp Japan
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0124—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors
    • H10D64/0125—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors characterised by the sectional shape, e.g. T or inverted T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0124—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors
    • H10D64/0125—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors characterised by the sectional shape, e.g. T or inverted T
    • H10D64/0126—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors characterised by the sectional shape, e.g. T or inverted T the sectional shape being asymmetrical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

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  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2022522175A 2020-05-13 2021-05-12 電力増幅用半導体装置 Active JP7307856B2 (ja)

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JP2020084418 2020-05-13
JP2020084418 2020-05-13
PCT/JP2021/018033 WO2021230283A1 (ja) 2020-05-13 2021-05-12 電力増幅用半導体装置

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JPWO2021230283A1 JPWO2021230283A1 (https=) 2021-11-18
JPWO2021230283A5 JPWO2021230283A5 (https=) 2022-10-13
JP7307856B2 true JP7307856B2 (ja) 2023-07-12

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US (1) US12166103B2 (https=)
EP (1) EP4135010B1 (https=)
JP (1) JP7307856B2 (https=)
CN (1) CN115552631B (https=)
WO (1) WO2021230283A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112204749A (zh) * 2020-07-16 2021-01-08 英诺赛科（珠海）科技有限公司 半导体装置结构和其制造方法
JP7679925B2 (ja) * 2021-03-29 2025-05-20 住友電工デバイス・イノベーション株式会社 半導体装置及び半導体装置の製造方法
TWI827079B (zh) * 2021-06-01 2023-12-21 愛爾蘭商納維達斯半導體有限公司 用於gan高電壓電晶體之場板結構
US12538512B2 (en) * 2021-10-14 2026-01-27 Nxp Usa, Inc. Semiconductor device with current-carrying electrodes and a conductive element and method of fabrication therefor
US12424594B2 (en) * 2022-03-31 2025-09-23 Raytheon Company Integrated diamond substrate for thermal management
CN114496802B (zh) * 2022-04-14 2022-06-24 北京智芯微电子科技有限公司 Ldmosfet器件的制作方法及ldmosfet器件
JP7852823B2 (ja) * 2022-12-26 2026-04-28 住友電工デバイス・イノベーション株式会社 半導体装置および半導体装置の製造方法
JPWO2024204055A1 (https=) * 2023-03-30 2024-10-03
TWI897008B (zh) * 2023-08-08 2025-09-11 世界先進積體電路股份有限公司 半導體結構的形成方法
CN120343961A (zh) * 2024-11-08 2025-07-18 厦门市三安集成电路有限公司 一种晶体管

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JP2000003919A (ja) 1998-06-16 2000-01-07 Nec Corp 電界効果型トランジスタ
JP2004200248A (ja) 2002-12-16 2004-07-15 Nec Corp 電界効果トランジスタ
JP2004214471A (ja) 2003-01-07 2004-07-29 Nec Corp 電界効果トランジスタ
WO2007122800A1 (ja) 2006-03-29 2007-11-01 Nec Corporation 電界効果トランジスタ
JP2008034522A (ja) 2006-07-27 2008-02-14 Oki Electric Ind Co Ltd 電界効果トランジスタ
JP2010278150A (ja) 2009-05-27 2010-12-09 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2011249828A (ja) 2011-07-19 2011-12-08 Fujitsu Ltd 化合物半導体装置
JP2014072391A (ja) 2012-09-28 2014-04-21 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2015046445A (ja) 2013-08-27 2015-03-12 富士通株式会社 化合物半導体装置及びその製造方法
JP2015170821A (ja) 2014-03-10 2015-09-28 古河電気工業株式会社 窒化物半導体装置、電界効果トランジスタおよびカスコード接続回路
WO2019176434A1 (ja) 2018-03-12 2019-09-19 ソニーセミコンダクタソリューションズ株式会社 半導体装置および半導体装置の製造方法、並びに電子機器

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JP2000003919A (ja) 1998-06-16 2000-01-07 Nec Corp 電界効果型トランジスタ
JP2004200248A (ja) 2002-12-16 2004-07-15 Nec Corp 電界効果トランジスタ
JP2004214471A (ja) 2003-01-07 2004-07-29 Nec Corp 電界効果トランジスタ
WO2007122800A1 (ja) 2006-03-29 2007-11-01 Nec Corporation 電界効果トランジスタ
JP2008034522A (ja) 2006-07-27 2008-02-14 Oki Electric Ind Co Ltd 電界効果トランジスタ
JP2010278150A (ja) 2009-05-27 2010-12-09 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2011249828A (ja) 2011-07-19 2011-12-08 Fujitsu Ltd 化合物半導体装置
JP2014072391A (ja) 2012-09-28 2014-04-21 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2015046445A (ja) 2013-08-27 2015-03-12 富士通株式会社 化合物半導体装置及びその製造方法
JP2015170821A (ja) 2014-03-10 2015-09-28 古河電気工業株式会社 窒化物半導体装置、電界効果トランジスタおよびカスコード接続回路
WO2019176434A1 (ja) 2018-03-12 2019-09-19 ソニーセミコンダクタソリューションズ株式会社 半導体装置および半導体装置の製造方法、並びに電子機器

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CN115552631B (zh) 2024-02-06
EP4135010A4 (en) 2023-10-04
US20230187529A1 (en) 2023-06-15
JPWO2021230283A1 (https=) 2021-11-18
US12166103B2 (en) 2024-12-10
CN115552631A (zh) 2022-12-30
EP4135010A1 (en) 2023-02-15
EP4135010B1 (en) 2026-01-21
WO2021230283A1 (ja) 2021-11-18

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