JP7297516B2 - 半導体装置および機器 - Google Patents

半導体装置および機器 Download PDF

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Publication number
JP7297516B2
JP7297516B2 JP2019084744A JP2019084744A JP7297516B2 JP 7297516 B2 JP7297516 B2 JP 7297516B2 JP 2019084744 A JP2019084744 A JP 2019084744A JP 2019084744 A JP2019084744 A JP 2019084744A JP 7297516 B2 JP7297516 B2 JP 7297516B2
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layer
conductor
insulator
semiconductor
conductor layer
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JP2020181915A5 (https=
JP2020181915A (ja
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章宏 河野
幸伸 鈴木
孝泰 金定
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Canon Inc
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Canon Inc
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Priority to JP2019084744A priority Critical patent/JP7297516B2/ja
Priority to US16/853,592 priority patent/US11488998B2/en
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JP2019084744A JP7297516B2 (ja) 2019-04-25 2019-04-25 半導体装置および機器
US16/853,592 US11488998B2 (en) 2019-04-25 2020-04-20 Semiconductor apparatus and equipment

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JP2020181915A JP2020181915A (ja) 2020-11-05
JP2020181915A5 JP2020181915A5 (https=) 2022-04-13
JP7297516B2 true JP7297516B2 (ja) 2023-06-26

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US11264343B2 (en) * 2019-08-30 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Bond pad structure for semiconductor device and method of forming same
US11791354B2 (en) * 2020-05-08 2023-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for reducing light leakage at memory nodes in CMOS image sensors
KR102880974B1 (ko) * 2021-02-26 2025-11-06 삼성전자주식회사 반도체 소자
KR102950733B1 (ko) * 2021-05-10 2026-04-09 삼성전자주식회사 반도체 장치
US20240105576A1 (en) * 2022-09-26 2024-03-28 Intel Corporation Dfr overhang process flow for electrolytic surface finish for glass core

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058544A (ja) 1998-08-04 2000-02-25 Matsushita Electron Corp 半導体装置及びその製造方法
JP2006179948A (ja) 2006-02-14 2006-07-06 Renesas Technology Corp 半導体装置の製造方法および半導体装置
JP2006287022A (ja) 2005-04-01 2006-10-19 Matsushita Electric Ind Co Ltd 半導体装置とその製造方法
JP2010258347A (ja) 2009-04-28 2010-11-11 Kobe Steel Ltd 表示装置およびこれに用いるＣｕ合金膜
JP2012019147A (ja) 2010-07-09 2012-01-26 Canon Inc 固体撮像装置
WO2016185901A1 (ja) 2015-05-15 2016-11-24 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2017188572A (ja) 2016-04-06 2017-10-12 キヤノン株式会社 光電変換装置、光電変換装置の製造方法及び撮像システム

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07230991A (ja) 1994-02-17 1995-08-29 Fujitsu Ltd 半導体装置の製造方法
JP4454242B2 (ja) 2003-03-25 2010-04-21 株式会社ルネサステクノロジ 半導体装置およびその製造方法
CN101569003B (zh) 2006-12-22 2011-02-16 日本电气株式会社 半导体装置及其制造方法
JP2009117673A (ja) 2007-11-08 2009-05-28 Panasonic Corp 半導体装置およびその製造方法
JP2011124472A (ja) 2009-12-14 2011-06-23 Toshiba Corp 半導体装置の製造方法
JP5919653B2 (ja) 2011-06-09 2016-05-18 ソニー株式会社 半導体装置
JP5734757B2 (ja) * 2011-06-16 2015-06-17 株式会社東芝 半導体装置及びその製造方法
FR2986904A1 (fr) * 2012-02-14 2013-08-16 St Microelectronics Crolles 2 Systeme d'assemblage de puces
US8969197B2 (en) * 2012-05-18 2015-03-03 International Business Machines Corporation Copper interconnect structure and its formation

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058544A (ja) 1998-08-04 2000-02-25 Matsushita Electron Corp 半導体装置及びその製造方法
JP2006287022A (ja) 2005-04-01 2006-10-19 Matsushita Electric Ind Co Ltd 半導体装置とその製造方法
JP2006179948A (ja) 2006-02-14 2006-07-06 Renesas Technology Corp 半導体装置の製造方法および半導体装置
JP2010258347A (ja) 2009-04-28 2010-11-11 Kobe Steel Ltd 表示装置およびこれに用いるＣｕ合金膜
JP2012019147A (ja) 2010-07-09 2012-01-26 Canon Inc 固体撮像装置
WO2016185901A1 (ja) 2015-05-15 2016-11-24 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2017188572A (ja) 2016-04-06 2017-10-12 キヤノン株式会社 光電変換装置、光電変換装置の製造方法及び撮像システム

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