JP2020181915A - 半導体装置および機器 - Google Patents
半導体装置および機器 Download PDFInfo
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- JP2020181915A JP2020181915A JP2019084744A JP2019084744A JP2020181915A JP 2020181915 A JP2020181915 A JP 2020181915A JP 2019084744 A JP2019084744 A JP 2019084744A JP 2019084744 A JP2019084744 A JP 2019084744A JP 2020181915 A JP2020181915 A JP 2020181915A
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- Prior art keywords
- layer
- conductor
- insulator
- conductor layer
- semiconductor device
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Abstract
Description
半導体層と、基板と、を備え、
前記半導体層と前記基板とが互いに積層された半導体装置であって、
銅を主成分とし、第1導電体部を有する第1導電体層と、
前記第1導電体層を覆い、第1絶縁体部を有する第1絶縁体層と、
銅を主成分とし、第2導電体部を有する第2導電体層と、
前記第2導電体層を覆い、第2絶縁体部を有する第2絶縁体層と、
を前記半導体層と前記基板との間に備え、
前記第1導電体部と前記第1絶縁体部との間の距離は、前記第1導電体層の厚さよりも小さく、
前記第1導電体部と前記第1絶縁体部の間にシリコンおよび銅を含有する第1領域が位置しており、
前記第2導電体部と前記第2絶縁体部との間の距離は、前記第2導電体層の厚さよりも小さく、
前記第2導電体部と前記第2絶縁体部の間にシリコンおよび銅を含有する第2領域が位置しており、
前記第1領域の最高窒素濃度は、前記第2領域の最高窒素濃度よりも高い、
ことを特徴とする。
半導体基板と、
前記半導体基板の上に配された、窒素および炭素の少なくとも一方を含むシリコン化合物からなる誘電体部材と、を備える半導体装置であって、
銅を主成分とし、導電体部を有する第1導電体層と、
前記第1導電体層を覆い、第1絶縁体部を有する第1絶縁体層と、
銅を主成分とし、第2導電体部を有する第2導電体層と、
前記第2導電体層を覆い、第2絶縁体部を有する第2絶縁体層と、
を前記半導体基板と前記誘電体部材との間に備え、
前記誘電体部材の前記半導体層の側の第1面は凹凸を有し、
前記誘電体部材の前記第1面とは反対側の第2面は前記第1面よりも平坦であり、
前記第1導電体部と前記第1絶縁体部との間の距離は、前記第1導電体層の厚さよりも小さく、前記第1導電体部と前記第1絶縁体部の間にシリコンおよび銅を含有する第1領域が位置しており、
前記第2導電体部と前記第2絶縁体部との間の距離は、前記第2導電体層の厚さよりも小さく、前記第2導電体部と前記第2絶縁体部の間にシリコンおよび銅を含有する第2領域が位置しており、
前記第1領域の最高窒素濃度は、前記第2領域の最高窒素濃度よりも高い、
ことを特徴とする。
20 基板
APR 半導体装置
31、32、33、34 導電体層
310、320、330、340 導電体部
41、42、43、44 絶縁体層
410、420、430、440 絶縁体部
51、52、53、54 中間領域
Claims (20)
- 半導体層と、
基板と、を備え、
前記半導体層と前記基板とが互いに積層された半導体装置であって、
銅を主成分とし、第1導電体部を有する第1導電体層と、
前記第1導電体層を覆い、第1絶縁体部を有する第1絶縁体層と、
銅を主成分とし、第2導電体部を有する第2導電体層と、
前記第2導電体層を覆い、第2絶縁体部を有する第2絶縁体層と、
を前記半導体層と前記基板との間に備え、
前記第1導電体部と前記第1絶縁体部との間の距離は、前記第1導電体層の厚さよりも小さく、
前記第1導電体部と前記第1絶縁体部の間にシリコンおよび銅を含有する第1領域が位置しており、
前記第2導電体部と前記第2絶縁体部との間の距離は、前記第2導電体層の厚さよりも小さく、
前記第2導電体部と前記第2絶縁体部の間にシリコンおよび銅を含有する第2領域が位置しており、
前記第1領域の最高窒素濃度は、前記第2領域の最高窒素濃度よりも高い、
ことを特徴とする半導体装置。 - 前記半導体層の厚さは、前記基板の厚さよりも小さく、
前記基板と前記第1導電体層との間の距離は、前記基板と前記第2導電体層との間の距離よりも小さい、請求項1に記載の半導体装置。 - 前記半導体層と前記第1導電体層との間の距離は、前記半導体層と前記第2導電体層との間の距離よりも大きく、かつ、前記半導体層の厚さよりも小さい、請求項1または2に記載の半導体装置。
- 銅を主成分とし、第3導電体部を有する第3導電体層と、
前記第3導電体層を覆い、第3絶縁体部を有する第3絶縁体層と、
銅を主成分とし、第4導電体部を有する第4導電体層と、
前記第4導電体層を覆い、第4絶縁体部を有する第4絶縁体層と、
を前記半導体層と前記基板との間に備え、
前記基板と前記第3導電体層との間の距離、および、前記基板と前記第4導電体層との間の距離は、前記基板と前記第1導電体層との間の距離、および、前記基板と前記第2導電体層との間の距離よりも小さく、
前記第3導電体部と前記第3絶縁体部との間の距離は、前記第3導電体層の厚さよりも小さく、
前記第3導電体部と前記第3絶縁体部の間にシリコンおよび銅を含有する第3領域が位置しており、
前記第4導電体部と前記第4絶縁体部との間の距離は、前記第4導電体層の厚さよりも小さく、
前記第4導電体部と前記第4絶縁体部の間にシリコンおよび銅を含有する第4領域が位置しており、
前記第3領域の最高窒素濃度は、前記第4領域の最高窒素濃度よりも高い、
ことを特徴とする請求項1乃至3のいずれか1項に記載の半導体装置。 - 前記半導体層と前記第3導電体層との間の距離は、前記半導体層と前記第4導電体層との間の距離よりも小さい、請求項4に記載の半導体装置。
- 前記半導体層には第1MOSトランジスタが設けられており、
前記基板には第2MOSトランジスタが設けられており、
前記第2MOSトランジスタのゲート長が、前記第1MOSトランジスタのゲート長よりも小さい、
請求項1乃至5のいずれか1項に記載の半導体装置。 - 前記半導体層には光電変換部が設けられている、
請求項1乃至6のいずれか1項に記載の半導体装置。 - 半導体基板と、
前記半導体基板の上に配された、窒素および炭素の少なくとも一方を含むシリコン化合物からなる誘電体部材と、を備える半導体装置であって、
銅を主成分とし、導電体部を有する第1導電体層と、
前記第1導電体層を覆い、第1絶縁体部を有する第1絶縁体層と、
銅を主成分とし、第2導電体部を有する第2導電体層と、
前記第2導電体層を覆い、第2絶縁体部を有する第2絶縁体層と、
を前記半導体基板と前記誘電体部材との間に備え、
前記誘電体部材の前記半導体層の側の第1面は凹凸を有し、
前記誘電体部材の前記第1面とは反対側の第2面は前記第1面よりも平坦であり、
前記第1導電体部と前記第1絶縁体部との間の距離は、前記第1導電体層の厚さよりも小さく、前記第1導電体部と前記第1絶縁体部の間にシリコンおよび銅を含有する第1領域が位置しており、
前記第2導電体部と前記第2絶縁体部との間の距離は、前記第2導電体層の厚さよりも小さく、前記第2導電体部と前記第2絶縁体部の間にシリコンおよび銅を含有する第2領域が位置しており、
前記第1領域の最高窒素濃度は、前記第2領域の最高窒素濃度よりも高い、
ことを特徴とする半導体装置。 - 前記第2面と前記第1導電体層との間の距離は、前記第2面と前記第2導電体層との間の距離よりも小さく、
前記誘電体部材の前記第2面の高低差は、前記第2面の高低差の1/10未満である、
請求項8に記載の半導体装置。 - 前記誘電体部材は、前記第1絶縁体層で囲まれた部分を有する、
請求項8または9に記載の半導体装置。 - 前記半導体基板は光電変換部を有し、
前記誘電体部材は前記光電変換部の上に導光部を有する、
請求項8乃至10のいずれか1項に記載の半導体装置。 - 前記第1領域において、窒素とシリコンとが結合している、
請求項1乃至11のいずれか1項に記載の半導体装置。 - 前記第1領域において、銅とシリコンとが結合している、
請求項1乃至12のいずれか1項に記載の半導体装置。 - 前記第1絶縁体層および前記第2絶縁体層はシリコンと炭素を含む、
請求項1乃至13のいずれか1項に記載の半導体装置。 - 前記第1領域の前記最高窒素濃度は、
前記第1導電体部の窒素濃度および前記第1絶縁体部の窒素濃度よりも高い、
請求項1乃至14のいずれか1項に記載の半導体装置。 - 前記第1領域はシリコン濃度と銅濃度が等しい第1部分を有し、
前記第2領域はシリコン濃度と銅濃度が等しい第2部分を有し、
前記第1部分における窒素濃度が、前記第2部分における窒素濃度よりも高い、
請求項1乃至15のいずれか1項に記載の半導体装置。 - 前記第1部分における窒素濃度は、前記第1部分における前記シリコン濃度および前記第1部分における前記銅濃度よりも低い、
請求項16に記載の半導体装置。 - 前記第1領域の最高窒素濃度は1.0原子%以上10原子%未満であり、
前記第2領域の最高窒素濃度は1.0原子%未満である、
請求項1乃至17のいずれか1項に記載の半導体装置。 - 前記第2領域は窒素を含有しない、
請求項1乃至18のいずれか1項に記載の半導体装置。 - 請求項1乃至19のいずれか1項に記載の半導体装置と、
前記半導体装置に接続された信号処理装置と、を備える機器。
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000058544A (ja) * | 1998-08-04 | 2000-02-25 | Matsushita Electron Corp | 半導体装置及びその製造方法 |
JP2006179948A (ja) * | 2006-02-14 | 2006-07-06 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
JP2006287022A (ja) * | 2005-04-01 | 2006-10-19 | Matsushita Electric Ind Co Ltd | 半導体装置とその製造方法 |
JP2010258347A (ja) * | 2009-04-28 | 2010-11-11 | Kobe Steel Ltd | 表示装置およびこれに用いるCu合金膜 |
JP2012019147A (ja) * | 2010-07-09 | 2012-01-26 | Canon Inc | 固体撮像装置 |
WO2016185901A1 (ja) * | 2015-05-15 | 2016-11-24 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
JP2017188572A (ja) * | 2016-04-06 | 2017-10-12 | キヤノン株式会社 | 光電変換装置、光電変換装置の製造方法及び撮像システム |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH07230991A (ja) | 1994-02-17 | 1995-08-29 | Fujitsu Ltd | 半導体装置の製造方法 |
JP4454242B2 (ja) | 2003-03-25 | 2010-04-21 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
WO2008078649A1 (ja) | 2006-12-22 | 2008-07-03 | Nec Corporation | 半導体装置およびその製造方法 |
JP2009117673A (ja) | 2007-11-08 | 2009-05-28 | Panasonic Corp | 半導体装置およびその製造方法 |
JP2011124472A (ja) | 2009-12-14 | 2011-06-23 | Toshiba Corp | 半導体装置の製造方法 |
JP5919653B2 (ja) | 2011-06-09 | 2016-05-18 | ソニー株式会社 | 半導体装置 |
JP5734757B2 (ja) * | 2011-06-16 | 2015-06-17 | 株式会社東芝 | 半導体装置及びその製造方法 |
FR2986904A1 (fr) * | 2012-02-14 | 2013-08-16 | St Microelectronics Crolles 2 | Systeme d'assemblage de puces |
US8969197B2 (en) * | 2012-05-18 | 2015-03-03 | International Business Machines Corporation | Copper interconnect structure and its formation |
-
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- 2019-04-25 JP JP2019084744A patent/JP7297516B2/ja active Active
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000058544A (ja) * | 1998-08-04 | 2000-02-25 | Matsushita Electron Corp | 半導体装置及びその製造方法 |
JP2006287022A (ja) * | 2005-04-01 | 2006-10-19 | Matsushita Electric Ind Co Ltd | 半導体装置とその製造方法 |
JP2006179948A (ja) * | 2006-02-14 | 2006-07-06 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
JP2010258347A (ja) * | 2009-04-28 | 2010-11-11 | Kobe Steel Ltd | 表示装置およびこれに用いるCu合金膜 |
JP2012019147A (ja) * | 2010-07-09 | 2012-01-26 | Canon Inc | 固体撮像装置 |
WO2016185901A1 (ja) * | 2015-05-15 | 2016-11-24 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
JP2017188572A (ja) * | 2016-04-06 | 2017-10-12 | キヤノン株式会社 | 光電変換装置、光電変換装置の製造方法及び撮像システム |
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