JP2020181915A5 - - Google Patents
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- Publication number
- JP2020181915A5 JP2020181915A5 JP2019084744A JP2019084744A JP2020181915A5 JP 2020181915 A5 JP2020181915 A5 JP 2020181915A5 JP 2019084744 A JP2019084744 A JP 2019084744A JP 2019084744 A JP2019084744 A JP 2019084744A JP 2020181915 A5 JP2020181915 A5 JP 2020181915A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductor
- insulator
- semiconductor device
- conductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims description 61
- 239000004065 semiconductor Substances 0.000 claims description 45
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 40
- 239000012212 insulator Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- 229910052802 copper Inorganic materials 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 239000010410 layer Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 150000003377 silicon compounds Chemical class 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 14
- 238000006243 chemical reaction Methods 0.000 claims 4
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019084744A JP7297516B2 (ja) | 2019-04-25 | 2019-04-25 | 半導体装置および機器 |
| US16/853,592 US11488998B2 (en) | 2019-04-25 | 2020-04-20 | Semiconductor apparatus and equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019084744A JP7297516B2 (ja) | 2019-04-25 | 2019-04-25 | 半導体装置および機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020181915A JP2020181915A (ja) | 2020-11-05 |
| JP2020181915A5 true JP2020181915A5 (https=) | 2022-04-13 |
| JP7297516B2 JP7297516B2 (ja) | 2023-06-26 |
Family
ID=72921637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019084744A Active JP7297516B2 (ja) | 2019-04-25 | 2019-04-25 | 半導体装置および機器 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US11488998B2 (https=) |
| JP (1) | JP7297516B2 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11264343B2 (en) * | 2019-08-30 | 2022-03-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bond pad structure for semiconductor device and method of forming same |
| US11791354B2 (en) * | 2020-05-08 | 2023-10-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for reducing light leakage at memory nodes in CMOS image sensors |
| KR102880974B1 (ko) * | 2021-02-26 | 2025-11-06 | 삼성전자주식회사 | 반도체 소자 |
| KR102950733B1 (ko) * | 2021-05-10 | 2026-04-09 | 삼성전자주식회사 | 반도체 장치 |
| US20240105576A1 (en) * | 2022-09-26 | 2024-03-28 | Intel Corporation | Dfr overhang process flow for electrolytic surface finish for glass core |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07230991A (ja) | 1994-02-17 | 1995-08-29 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2000058544A (ja) | 1998-08-04 | 2000-02-25 | Matsushita Electron Corp | 半導体装置及びその製造方法 |
| JP4454242B2 (ja) | 2003-03-25 | 2010-04-21 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
| JP4655725B2 (ja) | 2005-04-01 | 2011-03-23 | パナソニック株式会社 | 半導体装置の製造方法 |
| JP2006179948A (ja) | 2006-02-14 | 2006-07-06 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
| CN101569003B (zh) | 2006-12-22 | 2011-02-16 | 日本电气株式会社 | 半导体装置及其制造方法 |
| JP2009117673A (ja) | 2007-11-08 | 2009-05-28 | Panasonic Corp | 半導体装置およびその製造方法 |
| JP5420964B2 (ja) | 2009-04-28 | 2014-02-19 | 株式会社神戸製鋼所 | 表示装置およびこれに用いるＣｕ合金膜 |
| JP2011124472A (ja) | 2009-12-14 | 2011-06-23 | Toshiba Corp | 半導体装置の製造方法 |
| JP5451547B2 (ja) | 2010-07-09 | 2014-03-26 | キヤノン株式会社 | 固体撮像装置 |
| JP5919653B2 (ja) | 2011-06-09 | 2016-05-18 | ソニー株式会社 | 半導体装置 |
| JP5734757B2 (ja) * | 2011-06-16 | 2015-06-17 | 株式会社東芝 | 半導体装置及びその製造方法 |
| FR2986904A1 (fr) * | 2012-02-14 | 2013-08-16 | St Microelectronics Crolles 2 | Systeme d'assemblage de puces |
| US8969197B2 (en) * | 2012-05-18 | 2015-03-03 | International Business Machines Corporation | Copper interconnect structure and its formation |
| TWI692859B (zh) | 2015-05-15 | 2020-05-01 | 日商新力股份有限公司 | 固體攝像裝置及其製造方法、以及電子機器 |
| JP6711673B2 (ja) | 2016-04-06 | 2020-06-17 | キヤノン株式会社 | 光電変換装置、光電変換装置の製造方法及び撮像システム |
-
2019
- 2019-04-25 JP JP2019084744A patent/JP7297516B2/ja active Active
-
2020
- 2020-04-20 US US16/853,592 patent/US11488998B2/en active Active
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