JP7297180B1 - 基板状態測定装置、めっき装置、及び基板状態測定方法 - Google Patents

基板状態測定装置、めっき装置、及び基板状態測定方法 Download PDF

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JP7297180B1
JP7297180B1 JP2023505709A JP2023505709A JP7297180B1 JP 7297180 B1 JP7297180 B1 JP 7297180B1 JP 2023505709 A JP2023505709 A JP 2023505709A JP 2023505709 A JP2023505709 A JP 2023505709A JP 7297180 B1 JP7297180 B1 JP 7297180B1
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substrate
contact area
confocal sensor
state
area
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Japanese (ja)
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正 下山
泰之 増田
良輔 樋渡
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Ebara Corp
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Ebara Corp
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
JP2023505709A 2022-08-26 2022-08-26 基板状態測定装置、めっき装置、及び基板状態測定方法 Active JP7297180B1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023096094A JP7340719B1 (ja) 2022-08-26 2023-06-12 基板状態測定装置、めっき装置、及び基板状態測定方法

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PCT/JP2022/032188 WO2024042700A1 (ja) 2022-08-26 2022-08-26 基板状態測定装置、めっき装置、及び基板状態測定方法

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JP2023505709A Active JP7297180B1 (ja) 2022-08-26 2022-08-26 基板状態測定装置、めっき装置、及び基板状態測定方法
JP2023096094A Active JP7340719B1 (ja) 2022-08-26 2023-06-12 基板状態測定装置、めっき装置、及び基板状態測定方法

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JP (2) JP7297180B1 (ko)
KR (1) KR20240028974A (ko)
CN (1) CN117813422A (ko)
WO (1) WO2024042700A1 (ko)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019085612A (ja) 2017-11-07 2019-06-06 株式会社荏原製作所 めっき解析方法、めっき解析システム、及びめっき解析のためのコンピュータプログラム
US20200226742A1 (en) 2019-01-10 2020-07-16 Lam Research Corporation Defect classification and source analysis for semiconductor equipment
JP2020526660A (ja) 2017-06-29 2020-08-31 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ ウエハ保持装置上におけるめっきの遠隔検知
JP2020204579A (ja) 2019-06-18 2020-12-24 住友電工デバイス・イノベーション株式会社 ウェハの表面検査方法、表面検査装置、および電子部品の製造方法
JP2021063306A (ja) 2016-03-04 2021-04-22 株式会社荏原製作所 めっき装置及びめっき方法
JP7074937B1 (ja) 2021-06-04 2022-05-24 株式会社荏原製作所 めっき装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3797860B2 (ja) 2000-09-27 2006-07-19 株式会社荏原製作所 めっき装置及びめっき方法
US6444481B1 (en) 2001-07-02 2002-09-03 Advanced Micro Devices, Inc. Method and apparatus for controlling a plating process
JP2008019496A (ja) 2006-07-14 2008-01-31 Matsushita Electric Ind Co Ltd 電解めっき装置および電解めっき方法
ES2684508T3 (es) 2013-07-02 2018-10-03 Ancosys Gmbh Toma de huella in situ para deposición electroquímica y/o grabado electroquímico
JP6979900B2 (ja) 2018-02-13 2021-12-15 株式会社荏原製作所 基板保持部材、基板処理装置、基板処理装置の制御方法、プログラムを格納した記憶媒体
JP7083695B2 (ja) 2018-05-11 2022-06-13 株式会社荏原製作所 バンプ高さ検査装置、基板処理装置、バンプ高さ検査方法、記憶媒体
JP7358251B2 (ja) 2020-01-17 2023-10-10 株式会社荏原製作所 めっき支援システム、めっき支援装置、めっき支援プログラムおよびめっき実施条件決定方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021063306A (ja) 2016-03-04 2021-04-22 株式会社荏原製作所 めっき装置及びめっき方法
JP2020526660A (ja) 2017-06-29 2020-08-31 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ ウエハ保持装置上におけるめっきの遠隔検知
JP2019085612A (ja) 2017-11-07 2019-06-06 株式会社荏原製作所 めっき解析方法、めっき解析システム、及びめっき解析のためのコンピュータプログラム
US20200226742A1 (en) 2019-01-10 2020-07-16 Lam Research Corporation Defect classification and source analysis for semiconductor equipment
JP2020204579A (ja) 2019-06-18 2020-12-24 住友電工デバイス・イノベーション株式会社 ウェハの表面検査方法、表面検査装置、および電子部品の製造方法
JP7074937B1 (ja) 2021-06-04 2022-05-24 株式会社荏原製作所 めっき装置

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CN117813422A (zh) 2024-04-02
KR20240028974A (ko) 2024-03-05
JP2024031804A (ja) 2024-03-07
JP7340719B1 (ja) 2023-09-07
WO2024042700A1 (ja) 2024-02-29

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