JP7296456B2 - 基板の縁部での向上した処理を伴う処理チャンバ - Google Patents

基板の縁部での向上した処理を伴う処理チャンバ Download PDF

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Publication number
JP7296456B2
JP7296456B2 JP2021524208A JP2021524208A JP7296456B2 JP 7296456 B2 JP7296456 B2 JP 7296456B2 JP 2021524208 A JP2021524208 A JP 2021524208A JP 2021524208 A JP2021524208 A JP 2021524208A JP 7296456 B2 JP7296456 B2 JP 7296456B2
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processing chamber
substrate
edge
inches
showerhead
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JP2022506672A (ja
Inventor
チャンハン リー，
ミカエル ディー． ウィルワース，
ヴァレンティン エヌ． トドロウ，
ヒーン チャル リー，
フン サン キム，
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Automation & Control Theory (AREA)
JP2021524208A 2018-11-13 2019-09-20 基板の縁部での向上した処理を伴う処理チャンバ Active JP7296456B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023061506A JP2023098944A (ja) 2018-11-13 2023-04-05 基板の縁部での向上した処理を伴う処理チャンバ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/189,440 US11094511B2 (en) 2018-11-13 2018-11-13 Processing chamber with substrate edge enhancement processing
US16/189,440 2018-11-13
PCT/US2019/052169 WO2020101804A1 (en) 2018-11-13 2019-09-20 Processing chamber with substrate edge enhancement processing

Related Child Applications (1)

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JP2023061506A Division JP2023098944A (ja) 2018-11-13 2023-04-05 基板の縁部での向上した処理を伴う処理チャンバ

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JP2022506672A JP2022506672A (ja) 2022-01-17
JP7296456B2 true JP7296456B2 (ja) 2023-06-22

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JP2023061506A Pending JP2023098944A (ja) 2018-11-13 2023-04-05 基板の縁部での向上した処理を伴う処理チャンバ

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Country Status (6)

Country Link
US (1) US11094511B2 (https=)
JP (2) JP7296456B2 (https=)
KR (2) KR20210060646A (https=)
CN (2) CN119811974A (https=)
TW (1) TWI842751B (https=)
WO (1) WO2020101804A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021158451A1 (en) * 2020-02-04 2021-08-12 Lam Research Corporation Radiofrequency signal filter arrangement for plasma processing system
WO2022197915A1 (en) * 2021-03-19 2022-09-22 Lam Research Corporation Nozzle for remote plasma cleaning of process chambers
US11742185B2 (en) * 2021-03-26 2023-08-29 Applied Materials, Inc. Uniform in situ cleaning and deposition
WO2023043091A1 (ko) * 2021-09-14 2023-03-23 주식회사 티이엠 조립형 프로파일 상부 전극 및 이를 포함하는 플라즈마 처리 장치
CN114121583B (zh) * 2021-11-17 2024-03-29 长江存储科技有限责任公司 边缘刻蚀装置及晶圆处理方法
US12062523B2 (en) * 2022-02-14 2024-08-13 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and systems for cooling plasma treatment components
CN116322244A (zh) * 2023-02-17 2023-06-23 无锡极电光能科技有限公司 电子传输层及钙钛矿太阳能电池的制造方法
USD1112390S1 (en) 2024-07-22 2026-02-10 Asm Ip Holding B.V. Flow control ring

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007250967A (ja) 2006-03-17 2007-09-27 Tokyo Electron Ltd プラズマ処理装置および方法とフォーカスリング
JP2009531858A (ja) 2006-03-28 2009-09-03 東京エレクトロン株式会社 基板上の残留物を除去するための後エッチング処理システム
US20140034242A1 (en) 2012-07-31 2014-02-06 Lam Research Corporation Edge ring assembly for plasma processing chamber and method of manufacture thereof
JP2015138810A (ja) 2014-01-20 2015-07-30 東京エレクトロン株式会社 プラズマ処理装置
JP2015181174A (ja) 2008-10-31 2015-10-15 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ処理チャンバの下側電極アセンブリ

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5643394A (en) 1994-09-16 1997-07-01 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
US6050506A (en) 1998-02-13 2000-04-18 Applied Materials, Inc. Pattern of apertures in a showerhead for chemical vapor deposition
US6372150B1 (en) 1998-12-18 2002-04-16 Cypress Semiconductor Corp. High vapor plasma strip methods and devices to enhance the reduction of organic residues over metal surfaces
JP2001244256A (ja) * 2000-03-02 2001-09-07 Hitachi Ltd 処理装置
US6750155B2 (en) 2001-08-08 2004-06-15 Lam Research Corporation Methods to minimize moisture condensation over a substrate in a rapid cycle chamber
AU2002366921A1 (en) * 2001-12-13 2003-07-09 Tokyo Electron Limited Ring mechanism, and plasma processing device using the ring mechanism
US7390755B1 (en) 2002-03-26 2008-06-24 Novellus Systems, Inc. Methods for post etch cleans
US20040237997A1 (en) 2003-05-27 2004-12-02 Applied Materials, Inc. ; Method for removal of residue from a substrate
KR20060035158A (ko) * 2004-10-21 2006-04-26 삼성전자주식회사 반도체 식각 장치의 포커스링
KR20060084897A (ko) * 2005-01-21 2006-07-26 삼성전자주식회사 반도체 제조설비의 샤워헤드
GB0616131D0 (en) * 2006-08-14 2006-09-20 Oxford Instr Plasma Technology Surface processing apparatus
KR101272334B1 (ko) * 2006-09-13 2013-06-07 삼성디스플레이 주식회사 기판 지지 장치 및 박막 트랜지스터 표시판
KR100997104B1 (ko) * 2008-07-04 2010-11-29 주식회사 테스 반도체 제조용 샤워헤드 및 이 샤워헤드를 구비한 반도체제조장치
US8287650B2 (en) * 2008-09-10 2012-10-16 Applied Materials, Inc. Low sloped edge ring for plasma processing chamber
US8043434B2 (en) 2008-10-23 2011-10-25 Lam Research Corporation Method and apparatus for removing photoresist
EP2396457A2 (en) 2009-02-08 2011-12-21 AP Solutions, Inc. Plasma source with integral blade and method for removing materials from substrates
JP5455462B2 (ja) * 2009-06-23 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
DE202010014805U1 (de) * 2009-11-02 2011-02-17 Lam Research Corporation (Delaware Corporation) Heissrandring mit geneigter oberer Oberfläche
US8470614B2 (en) * 2010-10-28 2013-06-25 Texas Instruments Incorporated PECVD showerhead configuration for CMP uniformity and improved stress
TW201331408A (zh) * 2011-10-07 2013-08-01 Tokyo Electron Ltd 電漿處理裝置
CN202405228U (zh) * 2012-01-20 2012-08-29 中微半导体设备(上海)有限公司 一种用于等离子体处理装置的聚焦环
US9121097B2 (en) * 2012-08-31 2015-09-01 Novellus Systems, Inc. Variable showerhead flow by varying internal baffle conductance
KR20140101996A (ko) * 2013-02-13 2014-08-21 삼성전자주식회사 기판 지지유닛 및 이를 구비한 플라즈마 식각장치
US20140271097A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
KR101518398B1 (ko) * 2013-12-06 2015-05-08 참엔지니어링(주) 기판 처리 장치
KR102328847B1 (ko) * 2014-08-21 2021-11-19 엘지디스플레이 주식회사 대면적기판 처리장치
CN105552014B (zh) * 2014-10-28 2018-09-18 北京北方华创微电子装备有限公司 一种支撑装置以及等离子刻蚀设备
US10903055B2 (en) * 2015-04-17 2021-01-26 Applied Materials, Inc. Edge ring for bevel polymer reduction
US10378107B2 (en) * 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
CN108028175B (zh) * 2015-09-22 2019-06-28 应用材料公司 喷头支撑结构
TWI689619B (zh) * 2016-04-01 2020-04-01 美商應用材料股份有限公司 用於提供均勻流動的氣體的設備及方法
TWM563652U (zh) * 2016-10-13 2018-07-11 美商應用材料股份有限公司 用於電漿處理裝置的腔室部件及包含其之裝置
US10032661B2 (en) 2016-11-18 2018-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, method, and tool of manufacture
US10504738B2 (en) * 2017-05-31 2019-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Focus ring for plasma etcher

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007250967A (ja) 2006-03-17 2007-09-27 Tokyo Electron Ltd プラズマ処理装置および方法とフォーカスリング
JP2009531858A (ja) 2006-03-28 2009-09-03 東京エレクトロン株式会社 基板上の残留物を除去するための後エッチング処理システム
JP2015181174A (ja) 2008-10-31 2015-10-15 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ処理チャンバの下側電極アセンブリ
US20140034242A1 (en) 2012-07-31 2014-02-06 Lam Research Corporation Edge ring assembly for plasma processing chamber and method of manufacture thereof
JP2015138810A (ja) 2014-01-20 2015-07-30 東京エレクトロン株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
JP2023098944A (ja) 2023-07-11
JP2022506672A (ja) 2022-01-17
KR20230129595A (ko) 2023-09-08
CN119811974A (zh) 2025-04-11
TWI842751B (zh) 2024-05-21
CN112840445A (zh) 2021-05-25
US20200152431A1 (en) 2020-05-14
TW202107514A (zh) 2021-02-16
WO2020101804A1 (en) 2020-05-22
KR20210060646A (ko) 2021-05-26
US11094511B2 (en) 2021-08-17
KR102673616B1 (ko) 2024-06-07

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