TWI842751B - 具有基板邊緣加強處理的處理腔室及噴淋頭組件，及其方法 - Google Patents

具有基板邊緣加強處理的處理腔室及噴淋頭組件，及其方法 Download PDF

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Publication number
TWI842751B
TWI842751B TW108136319A TW108136319A TWI842751B TW I842751 B TWI842751 B TW I842751B TW 108136319 A TW108136319 A TW 108136319A TW 108136319 A TW108136319 A TW 108136319A TW I842751 B TWI842751 B TW I842751B
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Taiwan
Prior art keywords
processing chamber
substrate
edge
processing
showerhead
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TW108136319A
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English (en)
Chinese (zh)
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TW202107514A (zh
Inventor
昌憲 李
麥克Ｄ 威沃斯
瓦倫汀Ｎ 托多羅
賢奇 李
宏善 金
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美商應用材料股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Automation & Control Theory (AREA)
TW108136319A 2018-11-13 2019-10-08 具有基板邊緣加強處理的處理腔室及噴淋頭組件，及其方法 TWI842751B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/189,440 US11094511B2 (en) 2018-11-13 2018-11-13 Processing chamber with substrate edge enhancement processing
US16/189,440 2018-11-13

Publications (2)

Publication Number Publication Date
TW202107514A TW202107514A (zh) 2021-02-16
TWI842751B true TWI842751B (zh) 2024-05-21

Family

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TW108136319A TWI842751B (zh) 2018-11-13 2019-10-08 具有基板邊緣加強處理的處理腔室及噴淋頭組件，及其方法

Country Status (6)

Country Link
US (1) US11094511B2 (https=)
JP (2) JP7296456B2 (https=)
KR (2) KR20210060646A (https=)
CN (2) CN119811974A (https=)
TW (1) TWI842751B (https=)
WO (1) WO2020101804A1 (https=)

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WO2021158451A1 (en) * 2020-02-04 2021-08-12 Lam Research Corporation Radiofrequency signal filter arrangement for plasma processing system
WO2022197915A1 (en) * 2021-03-19 2022-09-22 Lam Research Corporation Nozzle for remote plasma cleaning of process chambers
US11742185B2 (en) * 2021-03-26 2023-08-29 Applied Materials, Inc. Uniform in situ cleaning and deposition
WO2023043091A1 (ko) * 2021-09-14 2023-03-23 주식회사 티이엠 조립형 프로파일 상부 전극 및 이를 포함하는 플라즈마 처리 장치
CN114121583B (zh) * 2021-11-17 2024-03-29 长江存储科技有限责任公司 边缘刻蚀装置及晶圆处理方法
US12062523B2 (en) * 2022-02-14 2024-08-13 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and systems for cooling plasma treatment components
CN116322244A (zh) * 2023-02-17 2023-06-23 无锡极电光能科技有限公司 电子传输层及钙钛矿太阳能电池的制造方法
USD1112390S1 (en) 2024-07-22 2026-02-10 Asm Ip Holding B.V. Flow control ring

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US20140224426A1 (en) * 2013-02-13 2014-08-14 Samsung Electronics Co., Ltd. Substrate support unit and plasma etching apparatus having the same
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TW201807245A (zh) * 2016-04-01 2018-03-01 應用材料股份有限公司 用於提供均勻流動的氣體的設備及方法

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CN101144153A (zh) * 2006-09-13 2008-03-19 三星电子株式会社 衬底支持装置及薄膜晶体管阵列面板的制造方法
TW201411761A (zh) * 2012-08-31 2014-03-16 Novellus Systems Inc 藉由改變內部阻流板傳導性之可變噴淋頭流
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Also Published As

Publication number Publication date
JP7296456B2 (ja) 2023-06-22
JP2023098944A (ja) 2023-07-11
JP2022506672A (ja) 2022-01-17
KR20230129595A (ko) 2023-09-08
CN119811974A (zh) 2025-04-11
CN112840445A (zh) 2021-05-25
US20200152431A1 (en) 2020-05-14
TW202107514A (zh) 2021-02-16
WO2020101804A1 (en) 2020-05-22
KR20210060646A (ko) 2021-05-26
US11094511B2 (en) 2021-08-17
KR102673616B1 (ko) 2024-06-07

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