JP2022506672A - 基板の縁部での向上した処理を伴う処理チャンバ - Google Patents
基板の縁部での向上した処理を伴う処理チャンバ Download PDFInfo
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- JP2022506672A JP2022506672A JP2021524208A JP2021524208A JP2022506672A JP 2022506672 A JP2022506672 A JP 2022506672A JP 2021524208 A JP2021524208 A JP 2021524208A JP 2021524208 A JP2021524208 A JP 2021524208A JP 2022506672 A JP2022506672 A JP 2022506672A
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- 238000012545 processing Methods 0.000 title claims abstract description 96
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000011148 porous material Substances 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006854 communication Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000007175 bidirectional communication Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Automation & Control Theory (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (15)
- 処理チャンバであって、
前記処理チャンバ内の内部処理領域を画定するチャンバ本体と、
前記処理チャンバ内に配置されたシャワーヘッドアセンブリであって、前記シャワーヘッドアセンブリの中心区域よりも縁部区域で高い開孔密度を有する複数の区域を有するシャワーヘッドアセンブリと、
前記処理チャンバの前記内部処理領域内に配置された基板支持アセンブリと、
前記基板支持アセンブリの縁部上に配置され且つ前記基板支持アセンブリを囲むフォーカスリングであって、下部幅と実質的に同様な側壁高さを有する段差を有するフォーカスリングとを備える、処理チャンバ。 - 前記シャワーヘッドアセンブリの上方に配置された分流器を更に備える、請求項1に記載の処理チャンバ。
- 前記分流器が、遠隔プラズマ源と連通している、請求項2に記載の処理チャンバ。
- 前記分流器が、遠位端まで上方にテーパ付けされたベースを有する、請求項2に記載の処理チャンバ。
- 前記ベースが第1の寸法を有し、前記遠位端が第2の寸法を有し、前記第1の寸法が前記第2の寸法よりも大きい、請求項4に記載の処理チャンバ。
- 前記第1の寸法が、前記第2の寸法の約20倍と約40倍の間である、請求項5に記載の処理チャンバ。
- 前記ベースが円形である、請求項5に記載の処理チャンバ。
- 前記シャワーヘッドアセンブリの前記中心区域が、開孔を有さない、請求項1に記載の処理チャンバ。
- 前記段差が傾斜した側壁を有する、請求項1に記載の処理チャンバ。
- 前記フォーカスリングが、下側本体上に配置された上側本体を有し、前記下側本体が、前記下側本体の第2の厚さよりも大きい第1の厚さを有する、請求項1に記載の処理チャンバ。
- 前記上側本体が、前記下側本体の面を露出させ、前記段差の下面を画定する、請求項10に記載の処理チャンバ。
- 前記上側本体が、前記段差の側壁を画定する上側内壁を有する、請求項10に記載の処理チャンバ。
- 内部に形成された複数の開孔を有するシャワーヘッドプレートであって、異なる開孔密度を有する複数の区域を有し、前記シャワーヘッドプレートの中心領域内に位置付けられた区域が、縁部領域内に位置付けられた区域よりも広いオープンエリアを有する、シャワーヘッドプレートを備える、シャワーヘッドアセンブリ。
- 前記縁部領域内に位置付けられた前記区域が、前記中心領域内に位置付けられた前記区域よりも高い開孔密度を有する、請求項13に記載のシャワーヘッドアセンブリ。
- 基板の縁部での処理効率を向上させるための方法であって、
遠隔プラズマ源からのガス流を分流器を介してシャワーヘッドアセンブリの縁部区域に迂回させること、及び
前記ガス流を、前記シャワーヘッドアセンブリの前記縁部区域内の開孔を通して前記基板の縁部に向けることを含む、方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2023061506A JP2023098944A (ja) | 2018-11-13 | 2023-04-05 | 基板の縁部での向上した処理を伴う処理チャンバ |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/189,440 | 2018-11-13 | ||
US16/189,440 US11094511B2 (en) | 2018-11-13 | 2018-11-13 | Processing chamber with substrate edge enhancement processing |
PCT/US2019/052169 WO2020101804A1 (en) | 2018-11-13 | 2019-09-20 | Processing chamber with substrate edge enhancement processing |
Related Child Applications (1)
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JP2023061506A Division JP2023098944A (ja) | 2018-11-13 | 2023-04-05 | 基板の縁部での向上した処理を伴う処理チャンバ |
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JP2022506672A true JP2022506672A (ja) | 2022-01-17 |
JP7296456B2 JP7296456B2 (ja) | 2023-06-22 |
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JP2021524208A Active JP7296456B2 (ja) | 2018-11-13 | 2019-09-20 | 基板の縁部での向上した処理を伴う処理チャンバ |
JP2023061506A Pending JP2023098944A (ja) | 2018-11-13 | 2023-04-05 | 基板の縁部での向上した処理を伴う処理チャンバ |
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Country Status (5)
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US (1) | US11094511B2 (ja) |
JP (2) | JP7296456B2 (ja) |
KR (1) | KR20210060646A (ja) |
CN (1) | CN112840445A (ja) |
WO (1) | WO2020101804A1 (ja) |
Families Citing this family (4)
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US11742185B2 (en) | 2021-03-26 | 2023-08-29 | Applied Materials, Inc. | Uniform in situ cleaning and deposition |
WO2023043091A1 (ko) * | 2021-09-14 | 2023-03-23 | 주식회사 티이엠 | 조립형 프로파일 상부 전극 및 이를 포함하는 플라즈마 처리 장치 |
CN114121583B (zh) * | 2021-11-17 | 2024-03-29 | 长江存储科技有限责任公司 | 边缘刻蚀装置及晶圆处理方法 |
US20230260758A1 (en) * | 2022-02-14 | 2023-08-17 | Taiwan Semiconductor Manufacturing Company | Methods and systems for cooling plasma treatment components |
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2018
- 2018-11-13 US US16/189,440 patent/US11094511B2/en active Active
-
2019
- 2019-09-20 CN CN201980067121.9A patent/CN112840445A/zh active Pending
- 2019-09-20 WO PCT/US2019/052169 patent/WO2020101804A1/en active Application Filing
- 2019-09-20 JP JP2021524208A patent/JP7296456B2/ja active Active
- 2019-09-20 KR KR1020217014712A patent/KR20210060646A/ko not_active Application Discontinuation
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2023
- 2023-04-05 JP JP2023061506A patent/JP2023098944A/ja active Pending
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JP2007250967A (ja) * | 2006-03-17 | 2007-09-27 | Tokyo Electron Ltd | プラズマ処理装置および方法とフォーカスリング |
JP2009531858A (ja) * | 2006-03-28 | 2009-09-03 | 東京エレクトロン株式会社 | 基板上の残留物を除去するための後エッチング処理システム |
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Also Published As
Publication number | Publication date |
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TW202107514A (zh) | 2021-02-16 |
CN112840445A (zh) | 2021-05-25 |
JP7296456B2 (ja) | 2023-06-22 |
KR20210060646A (ko) | 2021-05-26 |
US20200152431A1 (en) | 2020-05-14 |
JP2023098944A (ja) | 2023-07-11 |
KR20230129595A (ko) | 2023-09-08 |
US11094511B2 (en) | 2021-08-17 |
WO2020101804A1 (en) | 2020-05-22 |
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