JP7208160B2 - 斜面エッチングプロファイル制御 - Google Patents
斜面エッチングプロファイル制御 Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims description 122
- 238000000034 method Methods 0.000 claims description 66
- 238000010926 purge Methods 0.000 claims description 37
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000004891 communication Methods 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 52
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 229910052759 nickel Inorganic materials 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/02087—Cleaning of wafer edges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Description
Claims (15)
- 処理チャンバの内部のカバープレートの上に基板を置くことであって、前記基板がエッジ及び中心を有し、かつ前記エッジ及び前記中心の上に堆積層を含み、前記処理チャンバが、前記基板の上方に配置されたマスク及び前記基板の周囲及び下に配置されたエッジリングを含む、基板を置くことと、
前記エッジリングを持ち上げて、前記マスクと前記エッジリングとを接触させることと、
前記マスクの外面に沿って前記基板の前記エッジにプラズマを流すことと、
前記エッジにおいて前記基板の上面を前記プラズマに曝露し、前記プラズマで前記エッジから前記堆積層をエッチングすることと、
前記マスクの内面に位置付けられた2つ以上の開口部から前記基板の前記中心にパージガスを流すことと、
前記中心において前記基板の前記上面を前記パージガスに曝露し、前記中心から前記上面に沿って前記エッジに向かって前記パージガスを径方向に流し、前記プラズマ及び前記パージガスの界面にエッチングプロファイルを形成することと
を含む方法。 - 前記プラズマがプロセスガスから生成され、前記方法が、少なくとも前記プロセスガスの流量、前記パージガスの流量、又は両方の前記流量を変更することにより、前記エッチングプロファイルを調整することを更に含む、請求項1に記載の方法。
- プラズマ曝露により前記エッジリングを加熱することと、熱エネルギーを前記エッジリングから前記エッジに伝達することにより前記エッジを加熱することとを更に含む、請求項1に記載の方法。
- 前記マスクの前記内面に位置付けられた2つ以上の開口部が、3つ、4つ、又は5つの開口部を含む、請求項1に記載の方法。
- 前記カバープレートが基板支持体の上に配置され、前記カバープレートが波状のエッジを有する、請求項1に記載の方法。
- 前記カバープレートが、中心開孔を囲む複数の開口部を含む、請求項1に記載の方法。
- 前記エッジが約0.5mmから約5mmの径方向の幅を有する、請求項1に記載の方法。
- 前記基板と前記マスクとの間の距離が100ミル未満である、請求項1に記載の方法。
- 前記プラズマが、N2、O2、NF3、Ar、He、又はそれらの任意の組み合わせを含むプロセスガスから生成され、前記パージガスが、Ar、He、若しくはN2、又はそれらの任意の組み合わせを含む、請求項1に記載の方法。
- 処理チャンバ内に基板を置くことであって、前記基板がエッジ及び中心を有し、かつ前記エッジ及び前記中心の上に堆積層を含み、前記処理チャンバが、前記基板の周囲及び下に配置されたエッジリング、及び前記基板の上方に配置されたマスクを含む、基板を置くことと、
前記エッジリングを持ち上げて、前記マスクと前記エッジリングとを接触させることと、
前記マスクの外面に沿って前記基板の前記エッジにプラズマを流すことと、
前記エッジにおいて前記基板の上面を前記プラズマに曝露し、前記プラズマで前記エッジから前記堆積層をエッチングすることと、
前記マスクの内面に位置付けられた2つ以上の開口部から前記基板の前記中心にパージガスを流すことと、
前記中心において前記基板の前記上面を前記パージガスに曝露し、前記中心から前記上面に沿って前記エッジに向かって前記パージガスを径方向に流し、前記プラズマ及び前記パージガスの界面にエッチングプロファイルを形成することと、
プラズマ曝露により前記エッジリングを加熱することと、前記エッジリングから前記エッジに熱エネルギーを伝達することにより前記エッジを加熱することと
を含む方法。 - 前記プラズマがプロセスガスから生成され、前記方法が、少なくとも前記プロセスガスの流量、前記パージガスの流量、又は両方の前記流量を変更することにより、前記エッチングプロファイルを調整することを更に含む、請求項10に記載の方法。
- 前記マスクの前記内面に位置付けられた前記2つ以上の開口部が、3つ、4つ、又は5つの開口部を含む、請求項10に記載の方法。
- 前記エッジが約0.5mmから約5mmの径方向の幅を有する、請求項10に記載の方法。
- 前記基板と前記マスクとの間の距離が100ミル未満である、請求項10に記載の方法。
- 基板支持体と、
前記基板支持体の上に配置されたカバープレートと、
前記カバープレートの周囲及び下に配置されたエッジリングと、
前記カバープレートの上方に配置されたマスクであって、前記マスクが、外面、内面、及び前記内面に位置付けられた2つ以上の開口部を含む、マスクと、
前記基板支持体を垂直に移動させて、前記マスクと前記エッジリングとを接触させるように構成されたリフト機構と、
前記マスクの前記外面と流体連結している遠隔プラズマシステムと
を含む処理チャンバ。
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US201762503193P | 2017-05-08 | 2017-05-08 | |
US62/503,193 | 2017-05-08 | ||
US15/654,444 US10276364B2 (en) | 2017-05-08 | 2017-07-19 | Bevel etch profile control |
US15/654,444 | 2017-07-19 | ||
PCT/US2018/031311 WO2018208645A1 (en) | 2017-05-08 | 2018-05-07 | Bevel etch profile control |
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JP2020520097A JP2020520097A (ja) | 2020-07-02 |
JP7208160B2 true JP7208160B2 (ja) | 2023-01-18 |
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US (2) | US10276364B2 (ja) |
JP (1) | JP7208160B2 (ja) |
KR (1) | KR102350991B1 (ja) |
CN (1) | CN110914954B (ja) |
WO (1) | WO2018208645A1 (ja) |
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US10903066B2 (en) | 2017-05-08 | 2021-01-26 | Applied Materials, Inc. | Heater support kit for bevel etch chamber |
US10276364B2 (en) | 2017-05-08 | 2019-04-30 | Applied Materials, Inc. | Bevel etch profile control |
WO2020081644A1 (en) * | 2018-10-18 | 2020-04-23 | Lam Research Corporation | Lower plasma exclusion zone ring for bevel etcher |
US20230120710A1 (en) * | 2021-10-15 | 2023-04-20 | Applied Materials, Inc. | Downstream residue management hardware |
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2018
- 2018-05-07 KR KR1020197036062A patent/KR102350991B1/ko active IP Right Grant
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Also Published As
Publication number | Publication date |
---|---|
US10629427B2 (en) | 2020-04-21 |
WO2018208645A1 (en) | 2018-11-15 |
KR102350991B1 (ko) | 2022-01-12 |
US20190214249A1 (en) | 2019-07-11 |
KR20190138319A (ko) | 2019-12-12 |
US20180323062A1 (en) | 2018-11-08 |
CN110914954A (zh) | 2020-03-24 |
CN110914954B (zh) | 2023-09-08 |
US10276364B2 (en) | 2019-04-30 |
JP2020520097A (ja) | 2020-07-02 |
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