JP7293116B2 - 熱電焼結体および熱電素子 - Google Patents

熱電焼結体および熱電素子 Download PDF

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Publication number
JP7293116B2
JP7293116B2 JP2019540635A JP2019540635A JP7293116B2 JP 7293116 B2 JP7293116 B2 JP 7293116B2 JP 2019540635 A JP2019540635 A JP 2019540635A JP 2019540635 A JP2019540635 A JP 2019540635A JP 7293116 B2 JP7293116 B2 JP 7293116B2
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thermoelectric
substrate
electrode portion
terminal electrode
electrode part
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Japanese (ja)
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JP2020515051A (ja
JP2020515051A5 (enExample
Inventor
ソン，ミョンソク
キム，テヒ
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LG Innotek Co Ltd
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LG Innotek Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/82—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2019540635A 2017-02-06 2018-02-06 熱電焼結体および熱電素子 Active JP7293116B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2017-0016094 2017-02-06
KR1020170016094A KR102652928B1 (ko) 2017-02-06 2017-02-06 열전 소자
PCT/KR2018/001590 WO2018143780A1 (ko) 2017-02-06 2018-02-06 열전 소자

Publications (3)

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JP2020515051A JP2020515051A (ja) 2020-05-21
JP2020515051A5 JP2020515051A5 (enExample) 2021-03-11
JP7293116B2 true JP7293116B2 (ja) 2023-06-19

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JP2019540635A Active JP7293116B2 (ja) 2017-02-06 2018-02-06 熱電焼結体および熱電素子

Country Status (5)

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US (2) US11937506B2 (enExample)
JP (1) JP7293116B2 (enExample)
KR (2) KR102652928B1 (enExample)
CN (1) CN110268536B (enExample)
WO (1) WO2018143780A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7587509B2 (ja) * 2019-01-23 2024-11-20 エルジー イノテック カンパニー リミテッド 熱電素子
KR102794636B1 (ko) * 2020-01-13 2025-04-14 엘지이노텍 주식회사 발전장치
JPWO2021200265A1 (enExample) * 2020-03-30 2021-10-07

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000068564A (ja) 1998-08-18 2000-03-03 Dainippon Screen Mfg Co Ltd ペルチェ素子
JP2000349353A (ja) 1999-04-01 2000-12-15 Yamaha Corp ペルチェモジュールおよびそれを備えた光通信用モジュール
JP2001160632A (ja) 1999-12-02 2001-06-12 Yamaha Corp 熱電モジュール
JP2004158582A (ja) 2002-11-05 2004-06-03 Yamaha Corp 多段熱電モジュール
JP2004296546A (ja) 2003-03-25 2004-10-21 Kyocera Corp 熱電モジュール及びそのパッケージ
JP2005294760A (ja) 2004-04-05 2005-10-20 Renesas Technology Corp 半導体装置
JP2007110082A (ja) 2005-08-02 2007-04-26 Toshiba Corp 熱電変換装置及びその製造方法
JP2008244100A (ja) 2007-03-27 2008-10-09 Yamaha Corp 熱電モジュールおよびその製造方法
JP2016015838A (ja) 2014-07-02 2016-01-28 株式会社Kelk 熱電発電装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1065224A (ja) 1996-08-19 1998-03-06 Tekunisuko:Kk サーモモジュール
JPH10190071A (ja) * 1996-12-20 1998-07-21 Aisin Seiki Co Ltd 多段電子冷却装置
JP2002270906A (ja) 2001-03-13 2002-09-20 Aisin Seiki Co Ltd 熱電モジュール
JP4363958B2 (ja) 2003-10-29 2009-11-11 京セラ株式会社 熱電変換モジュール及びその製造方法
CN100397671C (zh) * 2003-10-29 2008-06-25 京瓷株式会社 热电换能模块
JP4287262B2 (ja) * 2003-12-08 2009-07-01 株式会社東芝 熱電変換装置
JP2010118475A (ja) * 2008-11-12 2010-05-27 Mitsumi Electric Co Ltd 熱電変換モジュール及び熱電変換装置
JP2010165840A (ja) * 2009-01-15 2010-07-29 Sumitomo Chemical Co Ltd 熱電変換モジュール及び熱電変換モジュールブロック
CN101807662B (zh) * 2009-02-18 2012-09-05 财团法人工业技术研究院 热电元件及其制作方法、芯片堆叠结构及芯片封装结构
US20130019524A1 (en) 2011-07-18 2013-01-24 Roger Collin Plant container systems and structures
KR101324257B1 (ko) 2011-11-22 2013-11-01 한국기계연구원 열전 반도체 모듈 및 이의 제조방법
KR101928005B1 (ko) * 2011-12-01 2019-03-13 삼성전자주식회사 열전 냉각 패키지 및 이의 열관리 방법
KR101680422B1 (ko) * 2014-01-13 2016-11-28 홍익대학교 산학협력단 써멀비아전극을 구비한 열전모듈 및 그 제조방법
JP6559650B2 (ja) * 2014-02-26 2019-08-14 国立大学法人京都大学 多孔性配位高分子、及びその用途
KR20160116997A (ko) 2015-03-31 2016-10-10 엘지이노텍 주식회사 열전환장치 및 이를 포함하는 제습장치

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000068564A (ja) 1998-08-18 2000-03-03 Dainippon Screen Mfg Co Ltd ペルチェ素子
JP2000349353A (ja) 1999-04-01 2000-12-15 Yamaha Corp ペルチェモジュールおよびそれを備えた光通信用モジュール
JP2001160632A (ja) 1999-12-02 2001-06-12 Yamaha Corp 熱電モジュール
JP2004158582A (ja) 2002-11-05 2004-06-03 Yamaha Corp 多段熱電モジュール
JP2004296546A (ja) 2003-03-25 2004-10-21 Kyocera Corp 熱電モジュール及びそのパッケージ
JP2005294760A (ja) 2004-04-05 2005-10-20 Renesas Technology Corp 半導体装置
JP2007110082A (ja) 2005-08-02 2007-04-26 Toshiba Corp 熱電変換装置及びその製造方法
JP2008244100A (ja) 2007-03-27 2008-10-09 Yamaha Corp 熱電モジュールおよびその製造方法
JP2016015838A (ja) 2014-07-02 2016-01-28 株式会社Kelk 熱電発電装置

Also Published As

Publication number Publication date
JP2020515051A (ja) 2020-05-21
KR102652928B1 (ko) 2024-03-29
KR20240046141A (ko) 2024-04-08
US20240188442A1 (en) 2024-06-06
US12274171B2 (en) 2025-04-08
KR20180091216A (ko) 2018-08-16
WO2018143780A1 (ko) 2018-08-09
CN110268536B (zh) 2023-10-27
CN110268536A (zh) 2019-09-20
KR102894274B1 (ko) 2025-12-02
US11937506B2 (en) 2024-03-19
US20210135078A1 (en) 2021-05-06

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