KR102652928B1 - 열전 소자 - Google Patents

열전 소자 Download PDF

Info

Publication number
KR102652928B1
KR102652928B1 KR1020170016094A KR20170016094A KR102652928B1 KR 102652928 B1 KR102652928 B1 KR 102652928B1 KR 1020170016094 A KR1020170016094 A KR 1020170016094A KR 20170016094 A KR20170016094 A KR 20170016094A KR 102652928 B1 KR102652928 B1 KR 102652928B1
Authority
KR
South Korea
Prior art keywords
thermoelectric
electrode portion
substrate
disposed
terminal electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020170016094A
Other languages
English (en)
Korean (ko)
Other versions
KR20180091216A (ko
Inventor
성명석
김태희
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to KR1020170016094A priority Critical patent/KR102652928B1/ko
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to PCT/KR2018/001590 priority patent/WO2018143780A1/ko
Priority to US16/482,522 priority patent/US11937506B2/en
Priority to CN201880010507.1A priority patent/CN110268536B/zh
Priority to JP2019540635A priority patent/JP7293116B2/ja
Publication of KR20180091216A publication Critical patent/KR20180091216A/ko
Priority to US18/443,637 priority patent/US12274171B2/en
Priority to KR1020240041082A priority patent/KR102894274B1/ko
Application granted granted Critical
Publication of KR102652928B1 publication Critical patent/KR102652928B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/82—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
KR1020170016094A 2017-02-06 2017-02-06 열전 소자 Active KR102652928B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020170016094A KR102652928B1 (ko) 2017-02-06 2017-02-06 열전 소자
US16/482,522 US11937506B2 (en) 2017-02-06 2018-02-06 Thermoelectric element
CN201880010507.1A CN110268536B (zh) 2017-02-06 2018-02-06 热电元件
JP2019540635A JP7293116B2 (ja) 2017-02-06 2018-02-06 熱電焼結体および熱電素子
PCT/KR2018/001590 WO2018143780A1 (ko) 2017-02-06 2018-02-06 열전 소자
US18/443,637 US12274171B2 (en) 2017-02-06 2024-02-16 Thermoelectric element
KR1020240041082A KR102894274B1 (ko) 2017-02-06 2024-03-26 열전 소자

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170016094A KR102652928B1 (ko) 2017-02-06 2017-02-06 열전 소자

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020240041082A Division KR102894274B1 (ko) 2017-02-06 2024-03-26 열전 소자

Publications (2)

Publication Number Publication Date
KR20180091216A KR20180091216A (ko) 2018-08-16
KR102652928B1 true KR102652928B1 (ko) 2024-03-29

Family

ID=63039994

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020170016094A Active KR102652928B1 (ko) 2017-02-06 2017-02-06 열전 소자
KR1020240041082A Active KR102894274B1 (ko) 2017-02-06 2024-03-26 열전 소자

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020240041082A Active KR102894274B1 (ko) 2017-02-06 2024-03-26 열전 소자

Country Status (5)

Country Link
US (2) US11937506B2 (enExample)
JP (1) JP7293116B2 (enExample)
KR (2) KR102652928B1 (enExample)
CN (1) CN110268536B (enExample)
WO (1) WO2018143780A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7587509B2 (ja) * 2019-01-23 2024-11-20 エルジー イノテック カンパニー リミテッド 熱電素子
KR102794636B1 (ko) * 2020-01-13 2025-04-14 엘지이노텍 주식회사 발전장치
JPWO2021200265A1 (enExample) * 2020-03-30 2021-10-07

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001160632A (ja) * 1999-12-02 2001-06-12 Yamaha Corp 熱電モジュール
JP2008244100A (ja) * 2007-03-27 2008-10-09 Yamaha Corp 熱電モジュールおよびその製造方法
CN101807662A (zh) * 2009-02-18 2010-08-18 财团法人工业技术研究院 热电元件及其制作方法、芯片堆叠结构及芯片封装结构

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1065224A (ja) 1996-08-19 1998-03-06 Tekunisuko:Kk サーモモジュール
JPH10190071A (ja) * 1996-12-20 1998-07-21 Aisin Seiki Co Ltd 多段電子冷却装置
JP2000068564A (ja) * 1998-08-18 2000-03-03 Dainippon Screen Mfg Co Ltd ペルチェ素子
JP4013446B2 (ja) 1999-04-01 2007-11-28 ヤマハ株式会社 ペルチェモジュールおよびそれを備えた光通信用モジュール
JP2002270906A (ja) 2001-03-13 2002-09-20 Aisin Seiki Co Ltd 熱電モジュール
JP4288927B2 (ja) 2002-11-05 2009-07-01 ヤマハ株式会社 多段熱電モジュール
JP4005937B2 (ja) 2003-03-25 2007-11-14 京セラ株式会社 熱電モジュールのパッケージ
JP4363958B2 (ja) 2003-10-29 2009-11-11 京セラ株式会社 熱電変換モジュール及びその製造方法
CN100397671C (zh) * 2003-10-29 2008-06-25 京瓷株式会社 热电换能模块
JP4287262B2 (ja) * 2003-12-08 2009-07-01 株式会社東芝 熱電変換装置
JP4458906B2 (ja) 2004-04-05 2010-04-28 株式会社ルネサステクノロジ 半導体装置
JP4901350B2 (ja) * 2005-08-02 2012-03-21 株式会社東芝 熱電変換装置及びその製造方法
JP2010118475A (ja) * 2008-11-12 2010-05-27 Mitsumi Electric Co Ltd 熱電変換モジュール及び熱電変換装置
JP2010165840A (ja) * 2009-01-15 2010-07-29 Sumitomo Chemical Co Ltd 熱電変換モジュール及び熱電変換モジュールブロック
US20130019524A1 (en) 2011-07-18 2013-01-24 Roger Collin Plant container systems and structures
KR101324257B1 (ko) 2011-11-22 2013-11-01 한국기계연구원 열전 반도체 모듈 및 이의 제조방법
KR101928005B1 (ko) * 2011-12-01 2019-03-13 삼성전자주식회사 열전 냉각 패키지 및 이의 열관리 방법
KR101680422B1 (ko) * 2014-01-13 2016-11-28 홍익대학교 산학협력단 써멀비아전극을 구비한 열전모듈 및 그 제조방법
JP6559650B2 (ja) * 2014-02-26 2019-08-14 国立大学法人京都大学 多孔性配位高分子、及びその用途
JP6417130B2 (ja) 2014-07-02 2018-10-31 株式会社Kelk 熱電発電装置
KR20160116997A (ko) 2015-03-31 2016-10-10 엘지이노텍 주식회사 열전환장치 및 이를 포함하는 제습장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001160632A (ja) * 1999-12-02 2001-06-12 Yamaha Corp 熱電モジュール
JP2008244100A (ja) * 2007-03-27 2008-10-09 Yamaha Corp 熱電モジュールおよびその製造方法
CN101807662A (zh) * 2009-02-18 2010-08-18 财团法人工业技术研究院 热电元件及其制作方法、芯片堆叠结构及芯片封装结构

Also Published As

Publication number Publication date
JP7293116B2 (ja) 2023-06-19
JP2020515051A (ja) 2020-05-21
KR20240046141A (ko) 2024-04-08
US20240188442A1 (en) 2024-06-06
US12274171B2 (en) 2025-04-08
KR20180091216A (ko) 2018-08-16
WO2018143780A1 (ko) 2018-08-09
CN110268536B (zh) 2023-10-27
CN110268536A (zh) 2019-09-20
KR102894274B1 (ko) 2025-12-02
US11937506B2 (en) 2024-03-19
US20210135078A1 (en) 2021-05-06

Similar Documents

Publication Publication Date Title
US11342490B2 (en) Thermoelectric leg and thermoelectric element comprising same
KR102894274B1 (ko) 열전 소자
KR102606657B1 (ko) 열전 소자
US12035626B2 (en) Thermoelectric device
KR102621181B1 (ko) 열전 소자
KR102391282B1 (ko) 열전 소결체 및 열전소자
KR20180088070A (ko) 열전소자 모듈
KR20210017784A (ko) 열전장치
KR102271221B1 (ko) 열전 소자
KR20200140015A (ko) 열전소자
KR20180091197A (ko) 열전 소자
KR102621179B1 (ko) 열전소재 및 이를 포함하는 열전소자와 열전모듈
KR102367202B1 (ko) 열전 소자
KR102514013B1 (ko) 열전 소자
KR20180088015A (ko) 열전 소자
KR102501544B1 (ko) 열전 소자 및 그의 보수 방법
KR102271150B1 (ko) 히트 싱크 및 이를 포함하는 열전 소자
KR20180091185A (ko) 열교환 장치
KR20180086937A (ko) 열전소자 어셈블리
KR20190046162A (ko) 열전 소자

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

PX0701 Decision of registration after re-examination

St.27 status event code: A-3-4-F10-F13-rex-PX0701

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601