JP7283472B2 - Adhesive sheet manufacturing method, dicing/die bonding integrated tape manufacturing method, semiconductor device manufacturing method, adhesive treatment method, adherend fixing method, and adherend peeling method - Google Patents

Adhesive sheet manufacturing method, dicing/die bonding integrated tape manufacturing method, semiconductor device manufacturing method, adhesive treatment method, adherend fixing method, and adherend peeling method Download PDF

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JP7283472B2
JP7283472B2 JP2020523168A JP2020523168A JP7283472B2 JP 7283472 B2 JP7283472 B2 JP 7283472B2 JP 2020523168 A JP2020523168 A JP 2020523168A JP 2020523168 A JP2020523168 A JP 2020523168A JP 7283472 B2 JP7283472 B2 JP 7283472B2
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adhesive layer
pressure
plasma
manufacturing
sensitive adhesive
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JPWO2019235562A1 (en
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美千子 彼谷
大輔 山中
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Resonac Corp
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Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Resonac Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/02—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving pretreatment of the surfaces to be joined
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
    • C09J2301/124—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present on both sides of the carrier, e.g. double-sided adhesive tape
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/302—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Medicinal Preparation (AREA)
  • Dicing (AREA)
  • Laminated Bodies (AREA)

Description

本発明は、粘着シートの製造方法、ダイシング・ダイボンディング一体型テープの製造方法、半導体装置の製造方法、粘着剤の処理方法、被着体の固定化方法、及び被着体の剥離方法に関する。 The present invention relates to a method for manufacturing an adhesive sheet, a method for manufacturing a dicing/die bonding integrated tape, a method for manufacturing a semiconductor device, a method for treating an adhesive, a method for fixing an adherend, and a method for peeling an adherend.

粘着剤は、工業分野の様々な用途に使用されている。工業的には架橋密度を調整することによって、粘着力（架橋密度等に起因する粘着剤自体のバルク特性）を制御することが一般的である。 Adhesives are used for various applications in the industrial field. Industrially, it is common to control the adhesive force (the bulk properties of the adhesive itself due to the crosslink density and the like) by adjusting the crosslink density.

その一方で、被着体に表面処理を実施することによって、被着体と粘着剤との粘着性を高める方法が知られている。例えば、特許文献１には、合成樹脂製品（被着体）に対してプラズマ処理を実施することによって、合成樹脂製品と塗膜との粘着性が向上することが記載されている。また、特許文献２には、粘着シートにおいて、プラスチックフィルム基材（被着体）に対してプラズマ処理等を実施することによって粘着剤層に対するプラスチックフィルム基材表面の投錨性を向上し得ることが記載されている。これらの特許文献では、粘着性を高める観点から、いずれも被着体に対して表面処理を実施することが開示されている。 On the other hand, there is known a method of increasing the adhesiveness between an adherend and an adhesive by applying a surface treatment to the adherend. For example, Patent Literature 1 describes that plasma treatment of a synthetic resin product (adherend) improves the adhesiveness between the synthetic resin product and a coating film. Further, in Patent Document 2, it is disclosed that in a pressure-sensitive adhesive sheet, the anchoring property of the surface of the plastic film substrate to the pressure-sensitive adhesive layer can be improved by subjecting the plastic film substrate (adherend) to plasma treatment or the like. Are listed. These patent documents all disclose that the adherend is subjected to a surface treatment from the viewpoint of enhancing adhesiveness.

特開昭５９－１００１４３号公報JP-A-59-100143 特開２０１１－０６８７１８号公報JP 2011-068718 A

しかし、従来の粘着剤は、粘着力の点で未だ改善の余地がある。そこで、本発明は、粘着力に優れた粘着剤層を有する粘着シートを製造することが可能な粘着シートの製造方法を提供することを主な目的とする。 However, conventional pressure-sensitive adhesives still have room for improvement in terms of adhesive strength. Accordingly, the main object of the present invention is to provide a method for producing a pressure-sensitive adhesive sheet that can produce a pressure-sensitive adhesive sheet having a pressure-sensitive adhesive layer with excellent adhesive strength.

被着体と粘着剤との粘着性の影響因子としては、粘着剤の粘着力（粘着剤自体のバルク特性）の他、被着体に対する粘着剤のなじみ易さ（濡れ性）がある。しかし、本発明者らの検討によれば、粘着剤の架橋密度を調整して粘着剤の粘着力を制御する方法においては、粘着力と濡れ性とがいわゆるトレードオフの関係にあることが判明した。例えば、粘着力が高くなるように架橋密度を調整すると、被着体に対する粘着剤の濡れ性は低下する傾向を示す。そして、かかる知見に基づきさらに検討した結果、被着体ではなく、粘着剤層に対してプラズマ処理を実施することによって、被処理面の接触角を低下させ、粘着力を向上させることができることを見出し、本発明を完成するに至った。 Factors affecting the adhesiveness between the adherend and the adhesive include the adhesive strength of the adhesive (bulk properties of the adhesive itself) and the ease of adaptability (wettability) of the adhesive to the adherend. However, according to the study of the present inventors, in the method of controlling the adhesive strength of the adhesive by adjusting the cross-linking density of the adhesive, it was found that there is a so-called trade-off relationship between the adhesive strength and the wettability. bottom. For example, when the crosslink density is adjusted so as to increase the adhesive strength, the wettability of the adhesive to the adherend tends to decrease. As a result of further investigation based on such knowledge, it was found that the contact angle of the surface to be treated can be reduced and the adhesive strength can be improved by performing plasma treatment on the adhesive layer instead of the adherend. The discovery led to the completion of the present invention.

本発明の一側面は、基材と基材上に設けられた粘着剤層とを有する粘着シート前駆体を準備する工程と、粘着シート前駆体における粘着剤層の基材と反対側の面に対してプラズマ処理を実施する工程とを備える、粘着シートの製造方法を提供する。 One aspect of the present invention includes a step of preparing a pressure-sensitive adhesive sheet precursor having a substrate and a pressure-sensitive adhesive layer provided on the substrate; and a step of performing plasma treatment on the adhesive sheet.

プラズマ処理は、大気圧プラズマを用いたプラズマ処理であってよい。プラズマ処理の処理温度は、基材の融点又は粘着剤層の融点のいずれか低い方の温度未満であってよい。 The plasma treatment may be plasma treatment using an atmospheric pressure plasma. The processing temperature of the plasma treatment may be lower than the melting point of the base material or the melting point of the pressure-sensitive adhesive layer, whichever is lower.

粘着シートの製造方法は、プラズマ処理が実施された粘着剤層の基材と反対側の面上に保護材を貼り付ける工程をさらに備えていてもよい。保護材は、プラズマ処理が実施された粘着剤層に貼り付ける側の面がプラズマ処理によって処理されたものであってよい。 The pressure-sensitive adhesive sheet manufacturing method may further include a step of attaching a protective material to the surface of the pressure-sensitive adhesive layer that has been plasma-treated, opposite to the substrate. The protective material may be plasma-treated on the side to be attached to the pressure-sensitive adhesive layer that has been plasma-treated.

別の側面において、本発明は、上述の製造方法によって得られる粘着シートを提供する。 Another aspect WHEREIN: This invention provides the adhesive sheet obtained by the above-mentioned manufacturing method.

別の側面において、本発明は、上述の製造方法によって得られる粘着シートにおいて、プラズマ処理が実施された粘着剤層の基材と反対側の面上に接着剤層を形成する工程を備える、ダイシング・ダイボンディング一体型テープの製造方法を提供する。 In another aspect, the present invention provides a pressure-sensitive adhesive sheet obtained by the above-described manufacturing method, comprising the step of forming an adhesive layer on the surface opposite to the substrate of the pressure-sensitive adhesive layer that has been subjected to plasma treatment, and dicing. - To provide a method for manufacturing a die-bonded integrated tape.

別の側面において、本発明は、上述の製造方法によって得られるダイシング・ダイボンディング一体型テープを提供する。 In another aspect, the present invention provides a dicing/die-bonding integrated tape obtained by the manufacturing method described above.

別の側面において、本発明は、上述の製造方法によって得られるダイシング・ダイボンディング一体型テープの接着剤層を半導体ウエハに貼り付ける工程と、半導体ウエハ、接着剤層、及びプラズマ処理が実施された粘着剤層を個片化する工程と、プラズマ処理が実施された前記粘着剤層から接着剤層が付着した半導体素子をピックアップする工程と、接着剤層を介して、半導体素子を半導体素子搭載用支持基板に接着する工程とを備える、半導体装置の製造方法を提供する。 In another aspect, the present invention provides a step of attaching the adhesive layer of the dicing and die bonding integrated tape obtained by the above-described manufacturing method to a semiconductor wafer, and a step of separating the adhesive layer into individual pieces; a step of picking up the semiconductor elements to which the adhesive layer is attached from the plasma-treated adhesive layer; and bonding to a support substrate.

別の側面において、本発明は、粘着剤に対してプラズマ処理を実施する工程を備える、粘着剤の処理方法を提供する。プラズマ処理は、大気圧プラズマを用いたプラズマ処理であってよい。プラズマ処理の処理温度は、粘着剤の融点未満であってよい。 In another aspect, the present invention provides a method of treating an adhesive, comprising the step of subjecting the adhesive to plasma treatment. The plasma treatment may be plasma treatment using an atmospheric pressure plasma. The treatment temperature of the plasma treatment may be below the melting point of the adhesive.

別の側面において、本発明は、第一の被着体に、上述の方法で処理された粘着剤を介して、第二の被着体を貼り付ける工程を備える、被着体の固定化方法を提供する。また、さらに別の側面において、本発明は、上述の方法で固定化された被着体の第一の被着体と粘着剤との界面又は第二の被着体と粘着剤との界面の少なくとも一方を水で処理して、第一の被着体と第二の被着体とを剥離する工程を備える、被着体の剥離方法を提供する。 In another aspect, the present invention provides a method for fixing an adherend, comprising the step of attaching a second adherend to a first adherend via an adhesive treated by the method described above. I will provide a. In still another aspect, the present invention relates to the interface between the first adherend and the pressure-sensitive adhesive or the interface between the second adherend and the pressure-sensitive adhesive of the adherend immobilized by the above method. Provided is a method for stripping adherends, comprising the step of treating at least one of the adherends with water to separate a first adherend and a second adherend.

本発明によれば、粘着力に優れた粘着剤層を有する粘着シートを製造することが可能な製造方法を提供することができる。また、本発明によれば、このような製造方法によって得られる粘着シートを用いたダイシング・ダイボンディング一体型テープの製造方法を提供することができる。また、本発明によれば、このような製造方法によって得られるダイシング・ダイボンディング一体型テープを用いた半導体装置の製造方法を提供することができる。さらに、本発明によれば、粘着剤の処理方法、被着体の固定化方法、及び被着体の剥離方法を提供することができる。 ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method which can manufacture the adhesive sheet which has an adhesive layer excellent in adhesive force can be provided. Further, according to the present invention, it is possible to provide a method for manufacturing a dicing/die-bonding integrated tape using the pressure-sensitive adhesive sheet obtained by such a manufacturing method. Further, according to the present invention, it is possible to provide a method of manufacturing a semiconductor device using a dicing/die bonding integrated tape obtained by such a manufacturing method. Furthermore, according to the present invention, it is possible to provide a method for treating an adhesive, a method for fixing an adherend, and a method for peeling an adherend.

図１は、粘着シートの製造方法の一実施形態を模式的に示す断面図である。図１（ａ）、（ｂ）、（ｃ）、及び（ｄ）は、各工程を模式的に示す断面図である。FIG. 1 is a cross-sectional view schematically showing one embodiment of the method for producing a pressure-sensitive adhesive sheet. 1(a), (b), (c), and (d) are cross-sectional views schematically showing each step. 図２は、ダイシング・ダイボンディング一体型テープの製造方法の一実施形態を模式的に示す断面図である。図２（ａ）、（ｂ）、及び（ｃ）は、各工程を模式的に示す断面図である。FIG. 2 is a cross-sectional view schematically showing an embodiment of a method for manufacturing a dicing/die-bonding integrated tape. 2A, 2B, and 2C are cross-sectional views schematically showing each step. 図３は、半導体装置の製造方法の一実施形態を模式的に示す断面図である。図３（ａ）、（ｂ）、（ｃ）、（ｄ）、（ｅ）、及び（ｆ）は、各工程を模式的に示す断面図である。FIG. 3 is a cross-sectional view schematically showing an embodiment of a method for manufacturing a semiconductor device. 3(a), (b), (c), (d), (e), and (f) are cross-sectional views schematically showing each step. 図４は、半導体装置の一実施形態を模式的に示す断面図である。FIG. 4 is a cross-sectional view schematically showing one embodiment of the semiconductor device.

以下、図面を適宜参照しながら、本発明の実施形態について説明する。ただし、本発明は以下の実施形態に限定されるものではない。以下の実施形態において、その構成要素（ステップ等も含む）は、特に明示した場合を除き、必須ではない。各図における構成要素の大きさは概念的なものであり、構成要素間の大きさの相対的な関係は各図に示されたものに限定されない。 BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with appropriate reference to the drawings. However, the present invention is not limited to the following embodiments. In the following embodiments, the constituent elements (including steps and the like) are not essential unless otherwise specified. The sizes of the components in each figure are conceptual, and the relative sizes of the components are not limited to those shown in each figure.

本明細書における数値及びその範囲についても同様であり、本発明を制限するものではない。本明細書において「～」を用いて示された数値範囲は、「～」の前後に記載される数値をそれぞれ最小値及び最大値として含む範囲を示す。本明細書中に段階的に記載されている数値範囲において、一つの数値範囲で記載された上限値又は下限値は、他の段階的な記載の数値範囲の上限値又は下限値に置き換えてもよい。また、本明細書中に記載されている数値範囲において、その数値範囲の上限値又は下限値は、実施例に示されている値に置き換えてもよい。 The same applies to numerical values and their ranges in this specification, and they do not limit the present invention. In this specification, the numerical range indicated using "to" indicates the range including the numerical values before and after "to" as the minimum and maximum values, respectively. In the numerical ranges described stepwise in this specification, the upper limit or lower limit described in one numerical range may be replaced with the upper limit or lower limit of the numerical range described in other steps. good. Moreover, in the numerical ranges described in this specification, the upper and lower limits of the numerical ranges may be replaced with the values shown in the examples.

本明細書において、（メタ）アクリレートは、アクリレート又はそれに対応するメタクリレートを意味する。 As used herein, (meth)acrylate means acrylate or its corresponding methacrylate.

［粘着シートの製造方法］
図１は、粘着シートの製造方法の一実施形態を模式的に示す断面図である。本実施形態に係る粘着シートの製造方法は、基材と基材上に設けられた粘着剤層とを有する粘着シート前駆体を準備する工程（粘着シート前駆体の準備工程）と、粘着シート前駆体における粘着剤層の基材と反対側の面に対してプラズマ処理を実施する工程（プラズマ処理の実施工程）とを備える。本実施形態に係る粘着シートの製造方法は、プラズマ処理が実施された粘着剤層の基材と反対側の面上に保護材を貼り付ける工程（保護材の配置工程）をさらに備えていてもよい。[Method for producing adhesive sheet]
FIG. 1 is a cross-sectional view schematically showing one embodiment of the method for producing a pressure-sensitive adhesive sheet. The method for producing a pressure-sensitive adhesive sheet according to the present embodiment comprises a step of preparing a pressure-sensitive adhesive sheet precursor having a substrate and a pressure-sensitive adhesive layer provided on the substrate (pressure-sensitive adhesive sheet precursor preparation step); and a step of performing plasma treatment on the surface of the pressure-sensitive adhesive layer on the body opposite to the substrate (step of performing plasma treatment). The method for producing a pressure-sensitive adhesive sheet according to the present embodiment may further include a step of attaching a protective material to the surface of the pressure-sensitive adhesive layer that has been plasma-treated on the opposite side of the substrate (a step of arranging the protective material). good.

＜粘着シート前駆体の準備工程＞
本工程では、プラズマ処理の対象となる粘着シート前駆体１００を準備する（図１（ａ）参照）。粘着シート前駆体１００は、基材１０と基材１０上に設けられた粘着剤層２０とを有する。<Preparation step for adhesive sheet precursor>
In this step, a pressure-sensitive adhesive sheet precursor 100 to be plasma-treated is prepared (see FIG. 1(a)). The adhesive sheet precursor 100 has a substrate 10 and an adhesive layer 20 provided on the substrate 10 .

基材１０は、プラズマ処理で発生する熱よりも高い融点（又は分解点若しくは軟化点）を有するものであれば特に制限されず、粘着剤の分野で使用される基材フィルムを用いることができる。基材フィルムは、ダイボンディング工程において、エキスパンドすることが可能であることが好ましい。このような基材フィルムとしては、例えば、ポリエチレンテレフタレートフィルム等のポリエステル系フィルム、ポリテトラフルオロエチレンフィルム、ポイエチレンフィルム、ポリプロピレンフィルム、ポリメチルペンテンフィルム、ポリビニルアセテートフィルム等のポリオレフィン系フィルム、ポリ塩化ビニルフィルム、ポリイミドフィルムなどのプラスチックフィルム等が挙げられる。基材１０は、粘着剤層２０が形成される面に対して、コロナ処理等の表面処理が施されていてもよい。 The base material 10 is not particularly limited as long as it has a melting point (or decomposition point or softening point) higher than the heat generated by the plasma treatment, and base films used in the field of adhesives can be used. . The base film is preferably expandable in the die bonding process. Examples of such a base film include polyester films such as polyethylene terephthalate film, polyolefin films such as polytetrafluoroethylene film, polyethylene film, polypropylene film, polymethylpentene film and polyvinyl acetate film, and polyvinyl chloride film. Examples thereof include plastic films such as films and polyimide films. The surface of the substrate 10 on which the pressure-sensitive adhesive layer 20 is formed may be subjected to surface treatment such as corona treatment.

粘着剤層２０は、粘着剤成分によって構成される層である。粘着剤層２０を構成する粘着剤成分は、プラズマ処理で発生する熱よりも高い融点（又は分解点若しくは軟化点）を有するものであれば特に制限されないが、室温（２５℃）で粘着力を有し、粘着剤層２０上に積層される層（例えば、後述の接着剤層）に対して密着力を有するものであることが好ましい。粘着剤層２０を構成する粘着剤成分は、ベース樹脂を含有していてもよい。ベース樹脂としては、例えば、アクリル系樹脂、合成ゴム、天然ゴム、ポリイミド樹脂等が挙げられる。ベース樹脂は、粘着剤成分の糊残りを減少させる観点から、後述の架橋剤等と反応し得る水酸基、カルボキシ基等の官能基を有することが好ましい。ベース樹脂は、紫外線、放射線等の高エネルギー線によって硬化する樹脂又は熱によって硬化する樹脂であってもよい。ベース樹脂は、高エネルギー線によって硬化するものが好ましく、紫外線によって硬化するもの（紫外線硬化型ベース樹脂）がより好ましい。 The adhesive layer 20 is a layer composed of an adhesive component. The adhesive component that constitutes the adhesive layer 20 is not particularly limited as long as it has a higher melting point (or decomposition point or softening point) than the heat generated by the plasma treatment. It is preferable that the adhesive layer 20 has adhesive strength to a layer laminated on the pressure-sensitive adhesive layer 20 (for example, an adhesive layer to be described later). The adhesive component constituting the adhesive layer 20 may contain a base resin. Examples of base resins include acrylic resins, synthetic rubbers, natural rubbers, polyimide resins, and the like. From the viewpoint of reducing the adhesive residue of the adhesive component, the base resin preferably has a functional group such as a hydroxyl group or a carboxyl group capable of reacting with a cross-linking agent or the like, which will be described later. The base resin may be a resin that is cured by high energy rays such as ultraviolet rays or radiation, or a resin that is cured by heat. The base resin is preferably one that is cured by high-energy rays, and more preferably one that is cured by ultraviolet rays (ultraviolet-curable base resin).

ベース樹脂として高エネルギー線によって硬化する樹脂を用いる場合、必要に応じて光重合開始剤を併用してもよい。光重合開始剤は、例えば、芳香族ケトン化合物、ベンゾインエーテル化合物、ベンジル化合物、エステル化合物、アクリジン化合物、２，４，５－トリアリールイミダゾール二量体等であってよい。 When a resin that is cured by high-energy rays is used as the base resin, a photopolymerization initiator may be used in combination, if necessary. Photopolymerization initiators may be, for example, aromatic ketone compounds, benzoin ether compounds, benzyl compounds, ester compounds, acridine compounds, 2,4,5-triarylimidazole dimers, and the like.

粘着剤成分は、粘着力を調整するため、ベース樹脂の官能基と架橋構造を形成可能な架橋剤を含有していてもよい。架橋剤は、エポキシ基、イソシアネート基、アジリジン基、及びトリアジニル基からなる群から選ばれる少なくとも１種の官能基を有することが好ましい。架橋剤は、１種を単独で用いてもよく、２種以上を組み合わせて用いてもよい。 The adhesive component may contain a cross-linking agent capable of forming a cross-linked structure with the functional group of the base resin in order to adjust the adhesive force. The cross-linking agent preferably has at least one functional group selected from the group consisting of epoxy groups, isocyanate groups, aziridine groups, and triazinyl groups. The cross-linking agents may be used singly or in combination of two or more.

架橋剤の含有量の調整は、プラズマ処理による効果を維持するために効果的である。架橋剤の含有量は、ベース樹脂１００質量部に対して、好ましくは５質量部以上、より好ましくは７質量部以上、さらに好ましくは１０質量部以上である。架橋剤の含有量が、ベース樹脂１００質量部に対して、５質量部以上であると、プラズマ処理による効果の減衰を抑制できる傾向にある。架橋剤の含有量は、ベース樹脂１００質量部に対して、３０質量部以下であってよい。架橋剤の含有量が、ベース樹脂１００質量部に対して、３０質量部以下であると、プラズマ処理による効果が維持され易くなる傾向にあり、粘着剤層と保護材との密着性の低下を抑制できる傾向にある。 Adjustment of the content of the cross-linking agent is effective for maintaining the effect of plasma treatment. The content of the cross-linking agent is preferably 5 parts by mass or more, more preferably 7 parts by mass or more, and still more preferably 10 parts by mass or more with respect to 100 parts by mass of the base resin. When the content of the cross-linking agent is 5 parts by mass or more with respect to 100 parts by mass of the base resin, it tends to be possible to suppress attenuation of the effect of the plasma treatment. The content of the cross-linking agent may be 30 parts by mass or less with respect to 100 parts by mass of the base resin. When the content of the cross-linking agent is 30 parts by mass or less with respect to 100 parts by mass of the base resin, the effect of the plasma treatment tends to be easily maintained, and the adhesion between the pressure-sensitive adhesive layer and the protective material is reduced. tend to be suppressed.

粘着剤成分は、その他の成分を含有していてもよい。その他の成分としては、例えば、ベース樹脂と光重合開始剤との架橋反応を促進させる目的で添加するアミン、スズ等の触媒；粘着特性を適切に調整する目的で添加するロジン系、テルペン樹脂系等のタッキファイヤー；各種界面活性剤などが挙げられる。 The adhesive component may contain other components. Other components include, for example, catalysts such as amines and tin added for the purpose of promoting the cross-linking reaction between the base resin and the photopolymerization initiator; rosin-based and terpene-based resins added for the purpose of appropriately adjusting adhesive properties. tackifier such as; various surfactants;

粘着剤層２０は、一実施形態において、水酸基を有するアクリル系樹脂とイソシアネート基を有する架橋剤とを含有する粘着剤成分によって構成される層であってよい。 In one embodiment, the adhesive layer 20 may be a layer composed of an adhesive component containing an acrylic resin having a hydroxyl group and a cross-linking agent having an isocyanate group.

ベース樹脂としての水酸基を有するアクリル系樹脂は、水酸基を有する（メタ）アクリレートを含む単量体成分を重合させることによって得られる。重合方法は、各種ラジカル重合等の公知の重合方法から適宜選択でき、例えば、懸濁重合法、溶液重合法、塊状重合法等であってよい。 An acrylic resin having a hydroxyl group as a base resin is obtained by polymerizing a monomer component containing a (meth)acrylate having a hydroxyl group. The polymerization method can be appropriately selected from known polymerization methods such as various radical polymerization methods, and may be, for example, suspension polymerization method, solution polymerization method, bulk polymerization method, and the like.

上記重合方法において単量体成分を重合させる場合、必要に応じて重合開始剤を用いてもよい。このような重合開始剤としては、例えば、ケトンパーオキシド、パーオキシケタール、ヒドロパーオキシド、ジアルキルパーオキシド、ジアシルパーオキシド、パーオキシカーボネート、パーオキシエステル、２，２’－アゾビスイソブチロニトリル、２，２’－アゾビス（２，４－ジメチルバレロニトリル）、２，２’－アゾビス（４－メトキシ－２’－ジメチルバレロニトリル）等が挙げられる。 When polymerizing the monomer components in the above polymerization method, a polymerization initiator may be used as necessary. Examples of such polymerization initiators include ketone peroxides, peroxyketals, hydroperoxides, dialkyl peroxides, diacyl peroxides, peroxycarbonates, peroxyesters, 2,2'-azobisisobutyronitrile. , 2,2′-azobis(2,4-dimethylvaleronitrile), 2,2′-azobis(4-methoxy-2′-dimethylvaleronitrile) and the like.

粘着剤層２０を有する粘着シート前駆体１００は、公知の方法を用いて製造することができる。粘着シート前駆体１００は、例えば、粘着剤層用の材料を分散媒で希釈し、ワニスを調製する工程と、得られたワニスを上述の基材１０上に塗工する工程と、塗工されたワニスから分散媒を除去する工程とを含む製造方法によって得ることができる。 The pressure-sensitive adhesive sheet precursor 100 having the pressure-sensitive adhesive layer 20 can be produced using a known method. The pressure-sensitive adhesive sheet precursor 100 is prepared, for example, by diluting the material for the pressure-sensitive adhesive layer with a dispersion medium to prepare a varnish, applying the obtained varnish on the substrate 10 described above, and applying the It can be obtained by a manufacturing method including a step of removing the dispersion medium from the varnish obtained.

粘着シート前駆体１００における粘着剤層２０の厚さは、０．１～３０μｍであってよい。粘着剤層２０の厚さが０．１μｍ以上であると、充分な粘着力を確保することできる傾向にある。粘着剤層２０の厚さが３０μｍ以下であると、経済的に有利な傾向にある。 The thickness of the adhesive layer 20 in the adhesive sheet precursor 100 may be 0.1 to 30 μm. When the thickness of the pressure-sensitive adhesive layer 20 is 0.1 μm or more, it tends to be possible to ensure sufficient adhesive strength. When the thickness of the pressure-sensitive adhesive layer 20 is 30 μm or less, it tends to be economically advantageous.

粘着シート前駆体１００の全体の厚さ（基材１０及び粘着剤層２０の合計の厚さ）は、５～１５０μｍ、５０～１５０μｍ、又は１００～１５０μｍであってよい。 The total thickness of the adhesive sheet precursor 100 (the total thickness of the substrate 10 and the adhesive layer 20) may be 5-150 μm, 50-150 μm, or 100-150 μm.

粘着シート前駆体１００は、プラズマ処理を実施する前において、粘着剤層２０の基材１０と反対側の面上に保護材が貼り付けられていてもよい。保護材は、後述の保護材３０で例示したものと同様のものを用いることができる。 The pressure-sensitive adhesive sheet precursor 100 may have a protective material attached to the surface of the pressure-sensitive adhesive layer 20 opposite to the substrate 10 before the plasma treatment. As the protective material, the same materials as those exemplified for the protective material 30 described later can be used.

＜プラズマ処理の実施工程＞
本工程では、粘着シート前駆体１００における粘着剤層２０の基材１０と反対側の面に対してプラズマ処理（図１（ｂ）のＡ）を実施する（図１（ｂ）参照）。これによって、プラズマ処理Ａが実施された粘着剤層（プラズマ処理後の粘着剤層２０Ａ）を有する粘着シート１１０を製造することができる（図１（ｃ）参照）。<Implementation process of plasma treatment>
In this step, the surface of the adhesive layer 20 of the adhesive sheet precursor 100 opposite to the substrate 10 is subjected to plasma treatment (A in FIG. 1(b)) (see FIG. 1(b)). As a result, the adhesive sheet 110 having the adhesive layer (the adhesive layer 20A after the plasma treatment) that has been subjected to the plasma treatment A can be manufactured (see FIG. 1(c)).

プラズマは、気体を構成する分子が部分的に又は完全に電離し、陽イオンと電子とに別れて自由に運動している状態である。プラズマ状態の気体を用いて粘着剤層の基材と反対側の面を処理することによって、粘着剤層の表面において化学反応が進行し、酸素を含む親水性基が付与され、被処理面の接触角が低下し、濡れ性が向上し得る。この反応を利用して、粘着シート前駆体の粘着剤層２０の粘着力を向上させることが可能となる。 Plasma is a state in which molecules constituting a gas are partially or completely ionized, divided into positive ions and electrons, and move freely. By treating the surface of the pressure-sensitive adhesive layer on the side opposite to the base material using a gas in a plasma state, a chemical reaction proceeds on the surface of the pressure-sensitive adhesive layer, and hydrophilic groups containing oxygen are imparted to the surface to be treated. The contact angle can be reduced and the wettability can be improved. This reaction can be used to improve the adhesive strength of the adhesive layer 20 of the adhesive sheet precursor.

プラズマ処理は、特に制限されないが、コスト、処理能力、及びダメージ低減の観点から大気圧プラズマを用いたプラズマ処理であってよい。大気圧プラズマを用いたプラズマ処理は、例えば、超高密度大気圧プラズマユニット（富士機械製造株式会社製、商品名：ＦＰＢ－２０ ＴＹＰＥ ＩＩ）を用いて実施することができる。 Plasma treatment is not particularly limited, but may be plasma treatment using atmospheric pressure plasma from the viewpoint of cost, processing capability, and damage reduction. Plasma treatment using atmospheric pressure plasma can be performed using, for example, an ultra-high density atmospheric pressure plasma unit (trade name: FPB-20 TYPE II, manufactured by Fuji Machine Manufacturing Co., Ltd.).

プラズマ処理の処理温度は、プラズマ処理による基材１０及び粘着剤層２０へのダメージを避ける観点から、基材１０の融点又は粘着剤層２０の融点のいずれか低い方の温度未満で行うことが好ましい。プラズマ処理は、処理をされる時間内に粘着シート前駆体１００（基材１０及び粘着剤層２０）にシワ、たわみ等が発生しないように、すなわち、粘着シートが著しく熱変形をしないように、処理温度、処理速度等の条件を調整しながら行うことが好ましい。シワ、たわみ等が発生すると、プラズマ処理時の装置稼働に障害となるおそれがある。プラズマ処理の温度条件は、例えば、３００℃以下、２５０℃以下、又は２００℃以下であってよい。 From the viewpoint of avoiding damage to the base material 10 and the adhesive layer 20 due to the plasma treatment, the treatment temperature of the plasma treatment may be lower than the melting point of the base material 10 or the melting point of the adhesive layer 20, whichever is lower. preferable. Plasma treatment is carried out so that the pressure-sensitive adhesive sheet precursor 100 (base material 10 and pressure-sensitive adhesive layer 20) does not wrinkle, bend, or the like during the treatment time, that is, the pressure-sensitive adhesive sheet does not undergo significant thermal deformation. It is preferable to carry out while adjusting conditions such as treatment temperature and treatment rate. If wrinkles, deflections, etc. occur, there is a risk of impeding the operation of the apparatus during plasma processing. The temperature conditions for plasma treatment may be, for example, 300° C. or less, 250° C. or less, or 200° C. or less.

プラズマ処理は、処理面積を調整することができる。そのため、プラズマ処理は、粘着シート前駆体１００における粘着剤層２０の基材１０と反対側の面の一部又は全部に実施することができる。プラズマ処理を粘着剤層２０の面の一部に対して実施すると、被処理面の接触角を調整することができることから、同一面において、接触角の低い部分（すなわち、粘着剤層の粘着力の高い部分）と接触角の高い部分（すなわち、粘着剤層の粘着力の低い部分）とを容易に作り分けることができる。 Plasma treatment can adjust the treatment area. Therefore, the plasma treatment can be performed on part or all of the surface of the pressure-sensitive adhesive layer 20 of the pressure-sensitive adhesive sheet precursor 100 opposite to the substrate 10 . When plasma treatment is performed on a part of the surface of the adhesive layer 20, the contact angle of the surface to be treated can be adjusted. a portion with a high contact angle) and a portion with a high contact angle (that is, a portion with a low adhesive strength of the pressure-sensitive adhesive layer).

＜保護材の配置工程＞
本工程では、プラズマ処理が実施された粘着剤層（プラズマ処理後の粘着剤層２０Ａ）の基材１０と反対側の面上に保護材３０を貼り付ける（図１（ｄ）参照）。これによって、保護材付き粘着シート１２０を得ることができる。保護材３０を貼り付ける方法は、公知の方法を用いて貼り付けることができる。<Process of arranging protective material>
In this step, a protective material 30 is attached to the surface of the plasma-treated adhesive layer (the plasma-treated adhesive layer 20A) opposite to the substrate 10 (see FIG. 1(d)). By this, the adhesive sheet 120 with a protective material can be obtained. A known method can be used to attach the protective material 30 .

保護材３０は、特に制限されず、粘着剤の分野で使用される保護フィルムを用いることができる。保護フィルムとしては、例えば、ポリエチレンテレフタレートフィルム等のポリエステル系フィルム、ポリテトラフルオロエチレンフィルム、ポリエチレンフィルム、ポリプロピレンフィルム、ポリメチルペンテンフィルム、ポリビニルアセテートフィルム等のポリオレフィン系フィルム、ポリ塩化ビニルフィルム、ポリイミドフィルム等のプラスチックフィルムなどが挙げられる。また、保護フィルムは、紙、不織布、金属箔等を使用することができる。保護材３０のプラズマ処理後の粘着剤層２０Ａ側の面は、シリコーン系剥離剤、フッ素系剥離剤、長鎖アルキルアクリレート系剥離剤等の離型剤によって、処理されていてもよい。 The protective material 30 is not particularly limited, and protective films used in the field of adhesives can be used. Examples of protective films include polyester films such as polyethylene terephthalate films, polyolefin films such as polytetrafluoroethylene films, polyethylene films, polypropylene films, polymethylpentene films, and polyvinyl acetate films, polyvinyl chloride films, polyimide films, and the like. and plastic films. Moreover, paper, a nonwoven fabric, metal foil, etc. can be used for a protective film. The surface of the protective material 30 on the pressure-sensitive adhesive layer 20A side after the plasma treatment may be treated with a release agent such as a silicone-based release agent, a fluorine-based release agent, or a long-chain alkyl acrylate-based release agent.

保護材３０は、保護材３０のプラズマ処理後の粘着剤層２０Ａに貼り付ける側の面がプラズマ処理によって処理されたものであってよい。保護材３０としてプラズマ処理によって処理されたものを用いることによって、プラズマ処理後の粘着剤層２０Ａの濡れ性が向上している状態を長期間維持できる傾向にある。 The protective material 30 may be plasma-treated on the side of the protective material 30 that is attached to the pressure-sensitive adhesive layer 20A after the plasma treatment. By using the protective material 30 that has been treated by plasma treatment, the improved wettability of the pressure-sensitive adhesive layer 20A after plasma treatment tends to be maintained for a long period of time.

保護材３０の厚さは、特に制限されないが、５～５００μｍ、１０～２００μｍ、又は１５～１００μｍであってよい。 The thickness of the protective material 30 is not particularly limited, but may be 5-500 μm, 10-200 μm, or 15-100 μm.

［ダイシング・ダイボンディング一体型テープの製造方法］
図２は、ダイシング・ダイボンディング一体型テープの製造方法の一実施形態を模式的に示す断面図である。本実施形態に係るダイシング・ダイボンディング一体型テープ１３０の製造方法は、上述の製造方法によって得られる粘着シート１１０において、プラズマ処理後の粘着剤層２０Ａの基材１０と反対側の面（プラズマ処理が実施された面）上に接着剤層４０を形成する工程を備える（図２（ａ）、（ｂ）参照）。[Manufacturing method of dicing/die bonding integrated tape]
FIG. 2 is a cross-sectional view schematically showing an embodiment of a method for manufacturing a dicing/die-bonding integrated tape. In the method for manufacturing the dicing/die bonding integrated tape 130 according to the present embodiment, in the adhesive sheet 110 obtained by the above-described manufacturing method, the surface of the adhesive layer 20A opposite to the base material 10 after plasma treatment (plasma treatment (see FIGS. 2A and 2B).

接着剤層４０は、接着剤成分によって構成される層である。接着剤層４０を構成する接着剤成分としては、例えば、熱硬化性接着剤成分、光硬化性接着剤成分、熱可塑性接着剤成分、酸素反応性接着剤成分等が挙げられる。接着剤層は、接着性の観点から、熱硬化性接着剤成分を含むことが好ましい。 The adhesive layer 40 is a layer composed of an adhesive component. Examples of the adhesive component forming the adhesive layer 40 include a thermosetting adhesive component, a photocurable adhesive component, a thermoplastic adhesive component, an oxygen reactive adhesive component, and the like. From the viewpoint of adhesiveness, the adhesive layer preferably contains a thermosetting adhesive component.

熱硬化性接着剤成分は、接着性の観点から、エポキシ樹脂及びエポキシ樹脂の硬化剤となり得るフェノール樹脂を含むことが好ましい。 From the viewpoint of adhesiveness, the thermosetting adhesive component preferably contains an epoxy resin and a phenol resin that can serve as a curing agent for the epoxy resin.

エポキシ樹脂は、分子内にエポキシ基を有するものであれば、特に制限なく用いることができる。エポキシ樹脂としては、例えば、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ビスフェノールＳ型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビスフェノールＡノボラック型エポキシ樹脂、ビスフェノールＦノボラック型エポキシ樹脂、ジシクロペンタジエン骨格含有エポキシ樹脂、スチルベン型エポキシ樹脂、トリアジン骨格含有エポキシ樹脂、フルオレン骨格含有エポキシ樹脂、トリフェノールメタン型エポキシ樹脂、ビフェニル型エポキシ樹脂、キシリレン型エポキシ樹脂、ビフェニルアラルキル型エポキシ樹脂、ナフタレン型エポキシ樹脂、多官能フェノール類、アントラセン等の多環芳香族類のジグリシジルエーテル化合物などが挙げられる。これらは、１種を単独で又は２種以上を組み合わせて用いてもよい。エポキシ樹脂の含有量は、接着剤層全量を基準として、２～５０質量％であってよい。 Epoxy resins can be used without particular limitation as long as they have an epoxy group in the molecule. Examples of epoxy resins include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, bisphenol A novolak type epoxy resin, and bisphenol F novolak type epoxy resin. , dicyclopentadiene skeleton-containing epoxy resin, stilbene-type epoxy resin, triazine skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, triphenolmethane-type epoxy resin, biphenyl-type epoxy resin, xylylene-type epoxy resin, biphenylaralkyl-type epoxy resin, naphthalene type epoxy resins, polyfunctional phenols, diglycidyl ether compounds of polycyclic aromatics such as anthracene, and the like. You may use these individually by 1 type or in combination of 2 or more types. The content of the epoxy resin may be 2 to 50% by mass based on the total amount of the adhesive layer.

フェノール樹脂は、分子内にフェノール性水酸基を有するものであれば特に制限なく用いることができる。フェノール樹脂はとしては、例えば、フェノール、クレゾール、レゾルシン、カテコール、ビスフェノールＡ、ビスフェノールＦ、フェニルフェノール、アミノフェノール等のフェノール類及び／又はα－ナフトール、β－ナフトール、ジヒドロキシナフタレン等のナフトール類とホルムアルデヒド等のアルデヒド基を有する化合物とを酸性触媒下で縮合又は共縮合させて得られるノボラック型フェノール樹脂、アリル化ビスフェノールＡ、アリル化ビスフェノールＦ、アリル化ナフタレンジオール、フェノールノボラック、フェノール等のフェノール類及び／又はナフトール類とジメトキシパラキシレン又はビス（メトキシメチル）ビフェニルから合成されるフェノールアラルキル樹脂、ナフトールアラルキル樹脂などが挙げられる。これらは、１種を単独で又は２種以上を組み合わせて用いてもよい。フェノール樹脂の含有量は、接着剤層全量を基準として、２～５０質量％であってよい。 Phenolic resins can be used without particular limitation as long as they have a phenolic hydroxyl group in the molecule. Phenolic resins include, for example, phenols such as phenol, cresol, resorcinol, catechol, bisphenol A, bisphenol F, phenylphenol and aminophenol, and/or naphthols such as α-naphthol, β-naphthol and dihydroxynaphthalene, and formaldehyde. Phenols such as novolac-type phenol resins, allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolak, phenol, etc. obtained by condensing or co-condensing a compound having an aldehyde group under an acidic catalyst, and and/or phenol aralkyl resins and naphthol aralkyl resins synthesized from naphthols and dimethoxyparaxylene or bis(methoxymethyl)biphenyl. You may use these individually by 1 type or in combination of 2 or more types. The content of the phenolic resin may be 2 to 50% by mass based on the total amount of the adhesive layer.

接着剤層４０は、その他の成分として、第三級アミン、イミダゾール類、第四級アンモニウム塩類等の硬化促進剤；水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、酸化アルミニウム、窒化アルミニウム、ホウ酸アルミウイスカ、窒化ホウ素、結晶質シリカ、非晶質シリカ等の無機フィラーなどを含んでいてもよい。その他の成分の含有量は、接着剤層全量を基準として、０～２０質量％であってよい。 Other components of the adhesive layer 40 include curing accelerators such as tertiary amines, imidazoles, and quaternary ammonium salts; aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, and silicic acid. Inorganic fillers such as magnesium, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, crystalline silica and amorphous silica may be included. The content of other components may be 0 to 20% by mass based on the total amount of the adhesive layer.

粘着シート１１０において、プラズマ処理は、粘着剤層２０の基材１０と反対側の面の一部又は全部に実施されている。プラズマ処理が粘着剤層２０の基材１０と反対側の面の一部に実施されている場合、接着剤層４０は、粘着剤層２０のプラズマ処理が実施された面の一部又全部を覆うように形成されていてもよいし、粘着剤層２０のプラズマ処理が実施されていない面の一部又全部を覆うように形成されていてもよい。また、接着剤層４０は、粘着剤層２０のプラズマ処理が実施された面及び粘着剤層２０のプラズマ処理が実施されていない面の両方の面の一部又全部を覆うように形成されていてもよい。プラズマ処理が粘着剤層２０の全部に実施されている場合、接着剤層４０は、粘着剤層２０のプラズマ処理が実施された面の一部又全部を覆うように形成されていてもよい。 In the pressure-sensitive adhesive sheet 110 , the plasma treatment is applied to part or all of the surface of the pressure-sensitive adhesive layer 20 opposite to the substrate 10 . When a part of the surface of the pressure-sensitive adhesive layer 20 opposite to the substrate 10 is plasma-treated, the adhesive layer 40 partially or entirely covers the plasma-treated surface of the pressure-sensitive adhesive layer 20. It may be formed so as to cover it, or it may be formed so as to cover part or all of the surface of the pressure-sensitive adhesive layer 20 on which the plasma treatment is not performed. In addition, the adhesive layer 40 is formed so as to cover part or all of both the plasma-treated surface of the adhesive layer 20 and the non-plasma-treated surface of the adhesive layer 20. may When the plasma treatment is performed on the entire pressure-sensitive adhesive layer 20, the adhesive layer 40 may be formed so as to cover part or all of the plasma-treated surface of the pressure-sensitive adhesive layer 20.

プラズマ処理後の粘着剤層２０Ａの基材１０と反対側の面上に接着剤層４０を形成する方法としては、例えば、公知の方法を用いて、接着剤成分をフィルム状に成形し、得られたフィルム状接着剤を、プラズマ処理後の粘着剤層２０Ａの基材１０と反対側の面に貼り合わせる方法が挙げられる。このようにして、ダイシング・ダイボンディング一体型テープ１３０を得ることができる（図２（ｂ）参照）。 As a method for forming the adhesive layer 40 on the surface of the pressure-sensitive adhesive layer 20A after the plasma treatment opposite to the substrate 10, for example, a known method is used to form the adhesive component into a film, and A method of bonding the obtained film-like adhesive to the surface of the pressure-sensitive adhesive layer 20A after the plasma treatment opposite to the base material 10 may be used. Thus, a dicing/die bonding integrated tape 130 can be obtained (see FIG. 2(b)).

ダイシング・ダイボンディング一体型テープ１３０は、接着剤層４０の粘着剤層２０Ａと反対側の面上に保護材５０を備えていてもよい。保護材５０は、特に制限されず、ダイシング・ダイボンディング一体型テープで使用される保護フィルムを用いることができる。保護フィルムとしては、例えば、ポリエチレンテレフタレートフィルム等のポリエステル系フィルム、ポリテトラフルオロエチレンフィルム、ポリエチレンフィルム、ポリプロピレンフィルム、ポリメチルペンテンフィルム、ポリビニルアセテートフィルム等のポリオレフィン系フィルム、ポリ塩化ビニルフィルム、ポリイミドフィルム等のプラスチックフィルムなどが挙げられる。このようにして、保護材付きダイシング・ダイボンディング一体型テープ１４０を得ることができる（図２（ｃ）参照）。 The dicing/die bonding integrated tape 130 may have a protective material 50 on the surface of the adhesive layer 40 opposite to the adhesive layer 20A. The protective material 50 is not particularly limited, and a protective film used in a dicing/die bonding integrated tape can be used. Examples of protective films include polyester films such as polyethylene terephthalate films, polyolefin films such as polytetrafluoroethylene films, polyethylene films, polypropylene films, polymethylpentene films, and polyvinyl acetate films, polyvinyl chloride films, polyimide films, and the like. and plastic films. Thus, a dicing/die-bonding integrated tape 140 with protective material can be obtained (see FIG. 2(c)).

［半導体装置（半導体パッケージ）の製造方法］
図３は、半導体装置の製造方法の一実施形態を模式的に示す断面図である。本実施形態に係る半導体装置の製造方法は、上述の製造方法によって得られるダイシング・ダイボンディング一体型テープ１３０の接着剤層４０を半導体ウエハＷに貼り付ける工程（ウエハラミネート工程、図３（ａ）、（ｂ）参照）と、半導体ウエハＷ、接着剤層４０、及びプラズマ処理が実施された粘着剤層（プラズマ処理後の粘着剤層２０Ａ）を個片化する工程（ダイシング工程、図３（ｃ）参照）と、必要に応じてプラズマ処理が実施された粘着剤層（プラズマ処理後の粘着剤層２０Ａ）に対して（基材１０を介して）紫外線を照射する工程（紫外線照射工程、図３（ｄ）参照）と、プラズマ処理が実施された粘着剤層（粘着剤層２０Ａａ）から接着剤層４０ａが付着した半導体素子Ｗａ（接着剤層付き半導体素子６０）をピックアップする工程（ピックアップ工程、図３（ｅ）参照）と、接着剤層４０ａを介して、接着剤層付き半導体素子６０を半導体素子搭載用支持基板８０に接着する工程（半導体素子接着工程、図３（ｆ）参照））とを備える。[Method for manufacturing a semiconductor device (semiconductor package)]
FIG. 3 is a cross-sectional view schematically showing an embodiment of a method for manufacturing a semiconductor device. The manufacturing method of the semiconductor device according to the present embodiment includes a step of attaching the adhesive layer 40 of the dicing/die bonding integrated tape 130 obtained by the manufacturing method described above to the semiconductor wafer W (wafer lamination step, FIG. 3A). , (b)), and a step of singulating the semiconductor wafer W, the adhesive layer 40, and the plasma-treated adhesive layer (the adhesive layer 20A after the plasma treatment) (a dicing step, FIG. 3 ( c)), and, if necessary, a step of irradiating the adhesive layer (the adhesive layer 20A after the plasma treatment) with ultraviolet rays (through the substrate 10) (ultraviolet irradiation step, (see FIG. 3D), and a step of picking up the semiconductor element Wa (semiconductor element 60 with adhesive layer) to which the adhesive layer 40a is attached from the plasma-treated adhesive layer (adhesive layer 20Aa) (pickup 3(e)), and a step of adhering the semiconductor element 60 with the adhesive layer to the semiconductor element mounting support substrate 80 via the adhesive layer 40a (semiconductor element adhering step, see FIG. 3(f). )).

＜ウエハラミネート工程＞
まず、ダイシング・ダイボンディング一体型テープ１３０を所定の装置に配置する。続いて、半導体ウエハＷの主面Ｗｓに、接着剤層４０を介してダイシング・ダイボンディング一体型テープ１３０を貼り付ける（図３（ａ）、（ｂ）参照）。半導体ウエハＷの回路面は、主面Ｗｓとは反対側の面に設けられていることが好ましい。<Wafer lamination process>
First, the dicing/die bonding integrated tape 130 is arranged in a predetermined device. Subsequently, a dicing/die bonding integrated tape 130 is attached to the main surface Ws of the semiconductor wafer W via the adhesive layer 40 (see FIGS. 3A and 3B). The circuit surface of the semiconductor wafer W is preferably provided on the surface opposite to the main surface Ws.

＜ダイシング工程＞
次に、半導体ウエハＷ、接着剤層４０、及びプラズマ処理後の粘着剤層２０Ａをダイシングする（図３（ｃ）参照）。このとき、基材１０の一部がダイシングされていてもよい。このように、ダイシング・ダイボンディング一体型テープ１３０は、ダイシングシートとしても機能する。<Dicing process>
Next, the semiconductor wafer W, the adhesive layer 40, and the plasma-treated adhesive layer 20A are diced (see FIG. 3(c)). At this time, part of the substrate 10 may be diced. Thus, the dicing/die bonding integrated tape 130 also functions as a dicing sheet.

＜紫外線照射工程＞
プラズマ処理後の粘着剤層２０Ａに対しては、必要に応じて、（基材１０を介して）紫外線を照射してもよい（図３（ｄ）参照）。粘着剤成分におけるベース樹脂が紫外線で硬化するもの（紫外線硬化型ベース樹脂）である場合、当該粘着剤層２０Ａが硬化し、粘着剤層２０Ａと接着剤層４０との間の接着力を低下させることができる。紫外線照射においては、波長２００～４００ｎｍの紫外線を用いることが好ましい。紫外線照射条件は、照度及び照射量をそれぞれ３０～２４０ｍＷ／ｃｍ２の範囲及び２００～５００ｍＪ／ｃｍ２の範囲に調整することが好ましい。<Ultraviolet irradiation process>
The pressure-sensitive adhesive layer 20A after the plasma treatment may be irradiated with ultraviolet rays (through the base material 10), if necessary (see FIG. 3(d)). When the base resin in the adhesive component is UV curable (ultraviolet curable base resin), the adhesive layer 20A is cured and the adhesive strength between the adhesive layer 20A and the adhesive layer 40 is reduced. be able to. It is preferable to use ultraviolet rays having a wavelength of 200 to 400 nm for ultraviolet irradiation. As for the ultraviolet irradiation conditions, it is preferable to adjust the illuminance and irradiation dose to the range of 30 to 240 mW/cm 2 and the range of 200 to 500 mJ/cm 2 , respectively.

＜ピックアップ工程＞
次に、基材１０をエキスパンドすることによって、ダイシングされた接着剤層付き半導体素子６０を互いに離間させつつ、基材１０側からニードル７２で突き上げられた接着剤層付き半導体素子６０を吸引コレット７４で吸引して粘着剤層２０Ａａからピックアップする（図３（ｅ）参照）。プラズマ処理が粘着剤層２０の基材１０と反対側の面の一部に実施されている場合、粘着剤層２０Ａａの接着剤層４０ａ側の面は、プラズマ処理が実施された面であっても、プラズマ処理が実施されていない面であってもよく、プラズマ処理が実施された面及びプラズマ処理が実施されていない面の両方を含む面であってもよい。なお、接着剤層付き半導体素子６０は、半導体素子Ｗａと接着剤層４０ａとを有する。半導体素子Ｗａは半導体ウエハＷがダイシングによって分割されたものであり、接着剤層４０ａは接着剤層４０がダイシングによって分割されたものである。粘着剤層２０Ａａはプラズマ処理後の粘着剤層２０Ａがダイシングによって分割されたものである。粘着剤層２０Ａａは接着剤層付き半導体素子６０をピックアップする際に基材１０上に残存し得る。ピックアップ工程では、必ずしも基材１０をエキスパンドすることは必要ないが、基材１０をエキスパンドすることによってピックアップ性をより向上させることができる。<Pickup process>
Next, by expanding the base material 10 , the diced semiconductor elements 60 with adhesive layers are separated from each other, and the semiconductor elements 60 with adhesive layers pushed up by the needles 72 from the side of the base material 10 are sucked into a suction collet 74 . to pick up from the adhesive layer 20Aa (see FIG. 3(e)). When the plasma treatment is performed on a part of the surface of the adhesive layer 20 opposite to the base material 10, the surface of the adhesive layer 20Aa on the adhesive layer 40a side is the surface on which the plasma treatment is performed. may be a surface not subjected to plasma treatment, or may be a surface including both a surface subjected to plasma treatment and a surface not subjected to plasma treatment. In addition, the semiconductor element 60 with an adhesive layer has the semiconductor element Wa and the adhesive layer 40a. The semiconductor element Wa is obtained by dividing the semiconductor wafer W by dicing, and the adhesive layer 40a is obtained by dividing the adhesive layer 40 by dicing. The adhesive layer 20Aa is obtained by dividing the plasma-treated adhesive layer 20A by dicing. The adhesive layer 20Aa can remain on the base material 10 when the semiconductor element 60 with the adhesive layer is picked up. In the pick-up process, the base material 10 does not necessarily need to be expanded, but by expanding the base material 10, the pick-up property can be further improved.

ニードル７２による突き上げ量は、適宜設定することができる。さらに、極薄ウエハに対しても充分なピックアップ性を確保する観点から、例えば、２段又は３段の突き上げを行ってもよい。また、吸引コレット７４を用いる方法以外の方法で接着剤層付き半導体素子６０をピックアップしてもよい。 The amount of thrust by the needle 72 can be set as appropriate. Furthermore, from the viewpoint of ensuring sufficient pick-up performance even for ultra-thin wafers, for example, two or three steps of pushing may be performed. Also, the semiconductor element 60 with the adhesive layer may be picked up by a method other than the method using the suction collet 74 .

＜半導体素子接着工程＞
接着剤層付き半導体素子６０をピックアップした後、接着剤層付き半導体素子６０を、熱圧着によって、接着剤層４０ａを介して半導体素子搭載用支持基板８０に接着する（図３（ｆ）参照）。半導体素子搭載用支持基板８０には、複数の接着剤層付き半導体素子６０を接着してもよい。<Semiconductor element bonding process>
After picking up the semiconductor element 60 with the adhesive layer, the semiconductor element 60 with the adhesive layer is adhered to the semiconductor element mounting support substrate 80 via the adhesive layer 40a by thermocompression bonding (see FIG. 3(f)). . A plurality of semiconductor elements 60 with adhesive layers may be adhered to the semiconductor element mounting support substrate 80 .

本実施形態に係る半導体装置の製造方法は、必要に応じて、半導体素子Ｗａと半導体素子搭載用支持基板８０とをワイヤーボンド７０によって電気的に接続する工程と、半導体素子搭載用支持基板８０の表面８０ａ上に、樹脂封止材９２を用いて半導体素子Ｗａを樹脂封止する工程とをさらに備えていてもよい。 The method of manufacturing a semiconductor device according to the present embodiment includes a step of electrically connecting the semiconductor element Wa and the semiconductor element mounting support substrate 80 by wire bonds 70 as required, and A step of resin-sealing the semiconductor element Wa on the surface 80a using a resin sealant 92 may be further included.

図４は、半導体装置の一実施形態を模式的に示す断面図である。図４に示す半導体装置２００は、上述の工程を経ることによって製造することができる。半導体装置２００は、半導体素子搭載用支持基板８０の表面８０ａと反対側の面に、外部基板（マザーボード）との電気的な接続用として、はんだボール９４が形成されていてもよい。 FIG. 4 is a cross-sectional view schematically showing one embodiment of the semiconductor device. The semiconductor device 200 shown in FIG. 4 can be manufactured through the steps described above. The semiconductor device 200 may have solder balls 94 formed on the surface opposite to the surface 80a of the semiconductor element mounting support substrate 80 for electrical connection with an external substrate (motherboard).

［粘着剤の処理方法］
一実施形態に係る粘着剤の処理方法は、粘着剤に対してプラズマ処理を実施する工程を備える。粘着剤は、上述の粘着シートの製造方法で例示した粘着剤と同様であってよい。プラズマ処理は、上述の粘着シートの製造方法で例示したプラズマ処理と同様であってよい。プラズマ処理は、大気圧プラズマを用いたプラズマ処理であってよい。プラズマ処理の処理温度は、粘着剤の融点未満であってよい。[Method for treating adhesive]
A method for treating an adhesive according to one embodiment includes a step of performing a plasma treatment on an adhesive. The adhesive may be the same as those exemplified in the adhesive sheet manufacturing method described above. The plasma treatment may be the same as the plasma treatment exemplified in the adhesive sheet manufacturing method described above. The plasma treatment may be plasma treatment using an atmospheric pressure plasma. The treatment temperature of the plasma treatment may be below the melting point of the adhesive.

［被着体の固定化方法］
一実施形態に係る被着体の固定化方法は、第一の被着体に、上述の方法で処理された粘着剤を介して、第二の被着体を貼り付ける工程を備える。第一の被着体及び第二の被着体としては、特に制限されないが、金属被着体（ＳＵＳ、アルミニウム等）、非金属被着体（ポリカーボネート、ガラス等）などが挙げられる。被着体の固定化条件は、粘着剤の種類、並びに第一の被着体及び第二の被着体の種類に合わせて適宜設定することができる。[Fixation method of adherend]
A method for fixing an adherend according to one embodiment comprises a step of attaching a second adherend to a first adherend via an adhesive treated by the method described above. The first adherend and the second adherend are not particularly limited, but include metal adherends (SUS, aluminum, etc.), non-metal adherends (polycarbonate, glass, etc.), and the like. The conditions for fixing the adherend can be appropriately set according to the type of adhesive and the types of the first adherend and the second adherend.

［被着体の剥離方法］
一実施形態に係る被着体の剥離方法は、上述の方法で固定化された被着体の第一の被着体と粘着剤との界面又は第二の被着体と粘着剤との界面の少なくとも一方を水で処理して（水と接触させて）、第一の被着体と第二の被着体とを剥離する工程を備える。プラズマ処理が実施された粘着剤は、プラズマ処理が実施例されていない粘着剤よりも親水性基が多く、水で処理する（水と接触させる）ことによって、容易に剥離する傾向にある。なお、第一の被着体と第二の被着体とを剥離したとき、粘着剤は、第一の被着体又は第二の被着体のいずれか一方に付着していてもよく、第一の被着体及び第二の被着体から脱離していてもよい。[Method for removing adherend]
A method for peeling an adherend according to one embodiment includes an interface between a first adherend and an adhesive or an interface between a second adherend and an adhesive of the adherend immobilized by the above method. and treating at least one of them with water (contacting with water) to separate the first adherend and the second adherend. The adhesive that has undergone plasma treatment has more hydrophilic groups than the adhesive that has not undergone plasma treatment, and tends to be easily peeled off by treatment with water (contact with water). In addition, when the first adherend and the second adherend are separated, the adhesive may adhere to either the first adherend or the second adherend, It may be detached from the first adherend and the second adherend.

以下に、本発明を実施例に基づいて具体的に説明するが、本発明はこれらに限定されるものではない。 EXAMPLES The present invention will be specifically described below based on examples, but the present invention is not limited to these.

（実施例１）
［粘着シートの作製］
＜粘着シート前駆体の準備＞
単量体として、２－エチルヘキシルアクリレート及びメチルメタクリレート、並びに官能基を含む単量体として、ヒドロキシエチルアクリレート及びアクリル酸を溶液重合法に従って重合させることによって、水酸基を有するアクリル系樹脂を得た。水酸基を有するアクリル系樹脂の重量平均分子量は４０万、ガラス転移点は－３８℃であった。(Example 1)
[Production of adhesive sheet]
<Preparation of adhesive sheet precursor>
An acrylic resin having a hydroxyl group was obtained by polymerizing 2-ethylhexyl acrylate and methyl methacrylate as monomers and hydroxyethyl acrylate and acrylic acid as monomers containing functional groups according to a solution polymerization method. The acrylic resin having a hydroxyl group had a weight average molecular weight of 400,000 and a glass transition point of -38°C.

重量平均分子量は、ＧＰＣ装置として東ソー株式会社製ＳＤ－８０２２／ＤＰ－８０２０／ＲＩ－８０２０、カラムとして日立化成株式会社製Ｇｅｌｐａｃｋ ＧＬ－Ａ１５０－Ｓ／ＧＬ－Ａ１６０－Ｓ、及び溶離液としてテトラヒドロフランを用いて、ポリスチレン換算の重量平均分子量（Ｍｗ）を測定した。 The weight-average molecular weight was measured using SD-8022/DP-8020/RI-8020 manufactured by Tosoh Corporation as a GPC apparatus, Gelpack GL-A150-S/GL-A160-S manufactured by Hitachi Chemical Co., Ltd. as a column, and tetrahydrofuran as an eluent. was used to measure the polystyrene equivalent weight average molecular weight (Mw).

ガラス転移点は、以下の関係式（ＦＯＸ式）によって算出した。
１／Ｔｇ＝Σ（Ｘｉ／Ｔｇｉ）
［上記式中、Ｔｇは、共重合体のガラス転移点（Ｋ）を示す。Ｘｉは、各単量体の質量分率を示し、Ｘ１＋Ｘ２＋…＋Ｘｉ＋…＋Ｘｎ＝１である。Ｔｇｉは、各単量体の単独重合体のガラス転移点（Ｋ）を示す。］The glass transition point was calculated by the following relational expression (FOX formula).
1/Tg=Σ(X i /Tg i )
[In the above formula, Tg represents the glass transition point (K) of the copolymer. X i indicates the mass fraction of each monomer, and X 1 +X 2 +...+X i +...+X n =1. Tg i indicates the glass transition point (K) of a homopolymer of each monomer. ]

スリーワンモータ及び撹拌翼を用い、水酸基を有するアクリル系樹脂１００質量部に対して、多官能イソシアネート架橋剤（三菱化学株式会社製、商品名「マイテックＮＹ７３０Ａ－Ｔ」）を１２質量部配合して撹拌することによって、粘着剤層形成用ワニスを得た。 Using a three-one motor and a stirring blade, 12 parts by mass of a polyfunctional isocyanate cross-linking agent (manufactured by Mitsubishi Chemical Corporation, trade name "Mitec NY730A-T") is blended with 100 parts by mass of acrylic resin having a hydroxyl group. By stirring, a varnish for forming an adhesive layer was obtained.

得られた粘着剤層形成用ワニスを、基材フィルムＡ（厚み３８μｍのポリエチレンテレフタレートフィルム）上にアプリケータを用いて、粘着剤層の厚みが１０μｍとなるように、ギャップを調整しながら塗工した。塗工された粘着剤層形成用ワニスを８０℃で５分間乾燥させた後、表面にコロナ処理が施された基材フィルムＢ（厚さ８０μｍのポリオレフィン系フィルム）を粘着剤層の上にラミネートし、室温（２５℃）で２週間放置し、充分にエージングを行うことによって、基材フィルムＡ／粘着剤層／基材フィルムＢの構成を有する粘着シート前駆体を得た。 The obtained varnish for forming an adhesive layer is applied onto a substrate film A (polyethylene terephthalate film having a thickness of 38 μm) using an applicator while adjusting the gap so that the adhesive layer has a thickness of 10 μm. bottom. After drying the applied adhesive layer-forming varnish at 80°C for 5 minutes, base film B (polyolefin film with a thickness of 80 µm) whose surface was subjected to corona treatment was laminated on the adhesive layer. Then, it was allowed to stand at room temperature (25° C.) for 2 weeks and sufficiently aged to obtain a pressure-sensitive adhesive sheet precursor having a structure of base film A/pressure-sensitive adhesive layer/base film B.

＜プラズマ処理の実施＞
粘着シート前駆体の基材フィルムＡを剥がし、超高密度大気圧プラズマユニット（富士機械製造株式会社製、商品名：ＦＰＢ－２０ ＴＹＰＥ ＩＩ）を用いて、粘着シート前駆体における粘着剤層の基材フィルムＢと反対側の面に対してプラズマ処理を実施し、粘着シートを作製した。その後、プラズマ処理が実施された粘着剤層の面上に、保護材（ポリエチレンテレフラレート（ＰＥＴ）フィルム）を配置し、実施例１の保護材付き粘着シートを得た。<Implementation of plasma treatment>
The base film A of the adhesive sheet precursor is peeled off, and an ultra-high density atmospheric pressure plasma unit (manufactured by Fuji Machine Manufacturing Co., Ltd., product name: FPB-20 TYPE II) is used to form the base of the adhesive layer in the adhesive sheet precursor. Plasma treatment was performed on the surface opposite to the material film B to prepare an adhesive sheet. After that, a protective material (polyethylene terephthalate (PET) film) was placed on the surface of the pressure-sensitive adhesive layer that had undergone the plasma treatment, to obtain a protective-material-attached pressure-sensitive adhesive sheet of Example 1.

（プラズマ処理の条件）
ヒーターの使用：使用せず
照射速度：５００ｍｍ／秒
照射距離：５ｍｍ
スリットノズル：２０ｍｍ幅
使用ガス：窒素及び空気
ガス流量：窒素６０Ｌ／分、空気２１Ｌ／分
繰り返し数：１回（照射方法：２０ｍｍ幅×８ライン）
サンプルサイズ：１５０ｍｍ×１５０ｍｍ
なお、照射距離、照射速度、ヒーター設定等を調整し、処理をされる時間内に粘着シート前駆体１００（基材１０及び粘着剤層２０）にシワ、たわみ等が発生しないように処理温度が１００℃以下になるように設定した。(Conditions for plasma treatment)
Use of heater: Not used Irradiation speed: 500mm/sec Irradiation distance: 5mm
Slit nozzle: 20 mm width Gas used: Nitrogen and air Gas flow rate: Nitrogen 60 L/min, air 21 L/min Number of repetitions: 1 time (irradiation method: 20 mm width x 8 lines)
Sample size: 150mm x 150mm
The irradiation distance, irradiation speed, heater settings, etc. are adjusted, and the processing temperature is adjusted so that the adhesive sheet precursor 100 (the base material 10 and the adhesive layer 20) does not wrinkle or bend during the processing time. The temperature was set to 100°C or less.

（実施例２）
保護材の粘着剤層側の面に対して、粘着剤層に実施したプラズマ処理と同様のプラズマ処理（繰り返し数：１回）を実施した以外は、実施例１と同様にして、実施例２の保護材付き粘着シートを得た。(Example 2)
Example 2 was carried out in the same manner as in Example 1, except that the same plasma treatment (repetition number: 1 time) as the plasma treatment performed on the adhesive layer was performed on the surface of the protective material on the adhesive layer side. was obtained.

（実施例３）
保護材のプラズマ処理の繰り返し数を１回から４回に変更した以外は、実施例２と同様にして、実施例３の保護材付き粘着シートを得た。(Example 3)
A pressure-sensitive adhesive sheet with a protective material of Example 3 was obtained in the same manner as in Example 2, except that the number of repetitions of the plasma treatment of the protective material was changed from 1 to 4 times.

（実施例４）
粘着剤層のプラズマ処理の繰り返し数を１回から４回に変更した以外は、実施例１と同様にして、実施例２の保護材付き粘着シートを得た。(Example 4)
A pressure-sensitive adhesive sheet with a protective material of Example 2 was obtained in the same manner as in Example 1, except that the number of repetitions of the plasma treatment of the pressure-sensitive adhesive layer was changed from 1 to 4.

（実施例５）
保護材の粘着剤層側の面に対して、粘着剤層に実施したプラズマ処理と同様のプラズマ処理（繰り返し数：１回）を実施した以外は、実施例４と同様にして、実施例５の保護材付き粘着シートを得た。(Example 5)
Example 5 was carried out in the same manner as in Example 4 except that the same plasma treatment (number of repetitions: 1) as the plasma treatment performed on the adhesive layer was performed on the surface of the protective material on the adhesive layer side. was obtained.

（実施例６）
保護材のプラズマ処理の繰り返し数を１回から４回に変更した以外は、実施例５と同様にして、実施例６の保護材付き粘着シートを得た。(Example 6)
A pressure-sensitive adhesive sheet with a protective material of Example 6 was obtained in the same manner as in Example 5, except that the number of repetitions of the plasma treatment of the protective material was changed from 1 to 4 times.

（比較例１）
粘着剤層に対してプラズマ処理を実施しなかった以外は、実施例１と同様にして、比較例１の保護材付き粘着シートを得た。(Comparative example 1)
A pressure-sensitive adhesive sheet with a protective material of Comparative Example 1 was obtained in the same manner as in Example 1, except that the pressure-sensitive adhesive layer was not subjected to plasma treatment.

［評価］
＜粘着剤層のプラズマ処理が実施された面に対する水の接触角の測定＞
実施例１～６及び比較例１の保護材付き粘着シートについて、プラズマ処理が実施された面に対する水の接触角を測定した。測定には、接触角計（協和界面化学株式会社製、商品名：Ｄｒｏｐ Ｍａｓｔｅｒ３００）を用いた。測定は、保護材付き粘着シートの保護材を剥離し、粘着剤層のプラズマ処理が実施された面にプローブ液体として水を滴下することによって行った。測定条件は、温度を２３～２８℃とし、プローブ液体の液適量を１．５μＬとし、測定タイミングをプローブの液適下後５秒とした。測定の試行数を１０回とし、得られた数値の中央値を接触角θとして求めた。結果を表１に示す。[evaluation]
<Measurement of contact angle of water with respect to plasma-treated surface of pressure-sensitive adhesive layer>
The pressure-sensitive adhesive sheets with protective material of Examples 1 to 6 and Comparative Example 1 were measured for the contact angle of water with respect to the plasma-treated surface. A contact angle meter (manufactured by Kyowa Interface Science Co., Ltd., trade name: Drop Master 300) was used for the measurement. The measurement was performed by peeling off the protective material of the pressure-sensitive adhesive sheet with protective material, and dropping water as a probe liquid onto the plasma-treated surface of the pressure-sensitive adhesive layer. The measurement conditions were a temperature of 23 to 28° C., an appropriate amount of the probe liquid of 1.5 μL, and a measurement timing of 5 seconds after the probe was dropped. The number of trial measurements was set to 10, and the median value of the obtained numerical values was determined as the contact angle θ. Table 1 shows the results.

Figure 0007283472000001
Figure 0007283472000001

＜ＳＵＳ基板に対する粘着剤層のピール強度の測定＞
実施例１、２及び比較例１の保護材付き粘着シートを幅１０ｍｍ、長さ７０ｍｍ以上になるように切り出し、保護材付き粘着シートから保護材を剥離してからＳＵＳ板（ＳＵＳ４３０ＢＡ）に貼り付けたものを初期の測定サンプルとした。ＳＵＳ板に貼り付ける際には、３ｋｇの錘ローラでサンプルの上を３回往復させた。剥離誘導テープ（王子タック社製、ＥＣテープ）を幅１０ｍｍに切り出してサンプルの先端に１０ｍｍ程度貼り、ロードセルの先端に固定した。剥離の進展がテープ幅と平行になるようロードセルの位置を微調整した。また、初期の測定サンプルを３か月冷蔵（５℃）保管したものを３か月経時の測定サンプルとした。これらの測定サンプルに対して、剥離角度３０度、剥離速度５０ｍｍ／分でＳＵＳ基板と粘着剤層との剥離を行い、ピール強度を求めた。なお、ＳＵＳ基板は使用前にアセトンで洗浄してから使用した。結果を表２に示す。なお、表２中の数値は、比較例１のピール強度の数値を基準とした相対値である。<Measurement of Peel Strength of Adhesive Layer to SUS Substrate>
The pressure-sensitive adhesive sheets with protective material of Examples 1 and 2 and Comparative Example 1 were cut to a width of 10 mm and a length of 70 mm or more, and the protective material was peeled off from the pressure-sensitive adhesive sheet with protective material, and then pasted on a SUS plate (SUS430BA). This was used as the initial measurement sample. When affixed to the SUS plate, the top of the sample was reciprocated three times with a weight roller of 3 kg. A stripping guide tape (EC tape, manufactured by Oji Tac Co., Ltd.) was cut to a width of 10 mm, attached to the tip of the sample by about 10 mm, and fixed to the tip of the load cell. The position of the load cell was finely adjusted so that the delamination progress was parallel to the width of the tape. In addition, the initial measurement sample was stored in a refrigerator (5°C) for 3 months and used as a measurement sample after 3 months. For these measurement samples, the SUS substrate and the adhesive layer were separated at a peeling angle of 30 degrees and a peeling rate of 50 mm/min to determine the peel strength. The SUS substrate was washed with acetone before use. Table 2 shows the results. The numerical values in Table 2 are relative values based on the peel strength values of Comparative Example 1.

Figure 0007283472000002
Figure 0007283472000002

実施例１～６の保護材付き粘着シートにおける粘着剤層に代えて、例えば、他のアクリル系樹脂、合成ゴム、天然ゴム、ポリイミド樹脂等をベース樹脂としたものを用いた場合においても、同様の効果が得られることが推測される。 In place of the pressure-sensitive adhesive layer in the pressure-sensitive adhesive sheet with protective material of Examples 1 to 6, for example, the same applies when using a base resin such as other acrylic resin, synthetic rubber, natural rubber, polyimide resin, etc. It is presumed that the effect of

実施例１～６の保護材付き粘着シートは、比較例１の保護材付き粘着シートに比べて、粘着剤層のプラズマ処理が実施された面の接触角が低下しており、粘着剤層の濡れ性が向上していた。また、実施例１、２の保護材付き粘着シートは、比較例１の保護材付き粘着シートに比べて、ピール強度が向上しており、粘着力が向上していた。また、実施例１と実施例２との対比から、保護材に対してもプラズマ処理を実施することによって、長期間にわたって、プラズマ処理を実施した効果が維持されていることが判明した。これらの結果から、本発明の製造方法が、粘着力に優れる粘着シートを製造することが可能であることが確認された。 In the pressure-sensitive adhesive sheets with a protective material of Examples 1 to 6, the contact angle of the plasma-treated surface of the pressure-sensitive adhesive layer is lower than that of the pressure-sensitive adhesive sheet with a protective material of Comparative Example 1. Wettability was improved. In addition, the adhesive sheets with protective material of Examples 1 and 2 had improved peel strength and adhesive strength as compared with the adhesive sheet with protective material of Comparative Example 1. Further, from a comparison between Example 1 and Example 2, it was found that the effect of the plasma treatment was maintained over a long period of time by performing the plasma treatment on the protective material as well. From these results, it was confirmed that the production method of the present invention can produce a PSA sheet with excellent adhesive strength.

１０…基材、２０…粘着剤層、２０Ａ…プラズマ処理後の粘着剤層、３０…保護材、４０…接着剤層、５０…保護材、６０…接着剤層付き半導体素子、７０…ワイヤーボンド、７２…ニードル、７４…吸引コレット、８０…半導体素子搭載用支持基板、９２…樹脂封止材、９４…はんだボール、Ｗ…半導体ウエハ、１００…粘着シート前駆体、１１０…粘着シート、１２０…保護材付き粘着シート、１３０…ダイシング・ダイボンディング一体型テープ、１４０…保護材付きダイシング・ダイボンディング一体型テープ。 DESCRIPTION OF SYMBOLS 10... Base material, 20... Adhesive layer, 20A... Adhesive layer after plasma treatment, 30... Protective material, 40... Adhesive layer, 50... Protective material, 60... Semiconductor element with adhesive layer, 70... Wire bond , 72... Needle 74... Suction collet 80... Semiconductor element mounting support substrate 92... Resin sealing material 94... Solder ball W... Semiconductor wafer 100... Adhesive sheet precursor 110... Adhesive sheet 120... Adhesive sheet with protective material, 130: Integrated dicing/die bonding tape, 140: Integrated dicing/die bonding tape with protective material.

Claims (6)

基材と前記基材上に設けられた粘着剤層とを有する粘着シート前駆体を準備する第１の工程と、A first step of preparing an adhesive sheet precursor having a substrate and an adhesive layer provided on the substrate;
前記粘着シート前駆体における前記粘着剤層の前記基材と反対側の面の一部又は全部に対してプラズマ処理を実施し、粘着シートを得る第２の工程と、a second step of plasma-treating part or all of the surface of the pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet precursor opposite to the base material to obtain a pressure-sensitive adhesive sheet;
前記粘着シートにおいて、前記粘着剤層の前記基材と反対側の面上のプラズマ処理が実施された被処理面の一部又は全部を覆うように接着剤層を形成する第３の工程と、a third step of forming an adhesive layer so as to cover part or all of the plasma-treated surface of the pressure-sensitive adhesive sheet opposite to the substrate;
を備える、ダイシング・ダイボンディング一体型テープの製造方法。A method for manufacturing a dicing/die bonding integrated tape. 前記プラズマ処理が、大気圧プラズマを用いたプラズマ処理である、請求項１に記載のダイシング・ダイボンディング一体型テープの製造方法。 2. The method of manufacturing an integrated dicing and die bonding tape according to claim 1, wherein said plasma treatment is plasma treatment using atmospheric pressure plasma. 前記プラズマ処理の処理温度が、前記基材の融点又は前記粘着剤層の融点のいずれか低い方の温度未満である、請求項１又は２に記載のダイシング・ダイボンディング一体型テープの製造方法。 3. The method for producing an integrated dicing and die bonding tape according to claim 1, wherein the treatment temperature of said plasma treatment is lower than the melting point of said base material or the melting point of said adhesive layer, whichever is lower. 前記第２の工程と前記第３の工程との間に、
プラズマ処理が実施された前記粘着剤層の前記基材と反対側の面上に保護材を貼り付ける工程と、
前記保護材をプラズマ処理が実施された前記粘着剤層から剥離する工程と、
をさらに備える、請求項１～３のいずれか一項に記載のダイシング・ダイボンディング一体型テープの製造方法。 Between the second step and the third step,
A step of attaching a protective material to the surface of the pressure-sensitive adhesive layer that has been plasma-treated, opposite to the base material;
a step of peeling the protective material from the plasma-treated pressure-sensitive adhesive layer;
The method for producing a dicing/die bonding integrated tape according to any one of claims 1 to 3, further comprising: 前記保護材は、プラズマ処理が実施された前記粘着剤層に貼り付ける側の面がプラズマ処理によって処理されたものである、請求項４に記載のダイシング・ダイボンディング一体型テープの製造方法。 5. The manufacturing method of the integrated dicing and die bonding tape according to claim 4, wherein the surface of the protective material to be adhered to the pressure-sensitive adhesive layer, which has been plasma-treated, is plasma-treated. 請求項１～５のいずれか一項に記載の製造方法によって得られるダイシング・ダイボンディング一体型テープの前記接着剤層を半導体ウエハに貼り付ける工程と、
前記半導体ウエハ、前記接着剤層、及びプラズマ処理が実施された前記粘着剤層を個片化する工程と、
プラズマ処理が実施された前記粘着剤層から前記接着剤層が付着した半導体素子をピックアップする工程と、
前記接着剤層を介して、前記半導体素子を半導体素子搭載用の支持基板に接着する工程と、
を備える、半導体装置の製造方法。 A step of attaching the adhesive layer of the dicing/die bonding integrated tape obtained by the manufacturing method according to any one of claims 1 to 5 to a semiconductor wafer;
a step of singulating the semiconductor wafer, the adhesive layer, and the plasma-treated adhesive layer;
a step of picking up the semiconductor element to which the adhesive layer is attached from the adhesive layer that has been subjected to the plasma treatment;
a step of adhering the semiconductor element to a support substrate for mounting the semiconductor element via the adhesive layer;
A method of manufacturing a semiconductor device, comprising:
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