TW202000827A - Method for manufacturing adhesive sheet, method for manufacturing dicing/die-bonding tape, method for manufacturing semiconductor device, method for treating adhesive, method for immobilizing adherend, and method for peeling adherend - Google Patents

Method for manufacturing adhesive sheet, method for manufacturing dicing/die-bonding tape, method for manufacturing semiconductor device, method for treating adhesive, method for immobilizing adherend, and method for peeling adherend Download PDF

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TW202000827A
TW202000827A TW108119835A TW108119835A TW202000827A TW 202000827 A TW202000827 A TW 202000827A TW 108119835 A TW108119835 A TW 108119835A TW 108119835 A TW108119835 A TW 108119835A TW 202000827 A TW202000827 A TW 202000827A
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adhesive
adhesive layer
plasma treatment
manufacturing
adherend
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TW108119835A
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Chinese (zh)
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TWI815903B (en
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彼谷美千子
山中大輔
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日商日立化成股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/02—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving pretreatment of the surfaces to be joined
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
    • C09J2301/124—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present on both sides of the carrier, e.g. double-sided adhesive tape
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/302—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
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    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
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    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Laminated Bodies (AREA)
  • Dicing (AREA)
  • Medicinal Preparation (AREA)

Abstract

The present invention discloses a method for manufacturing an adhesive sheet, said method including: a step for preparing an adhesive sheet precursor having a substrate and an adhesive layer provided on the substrate; and a step for performing plasma treatment on a surface of the adhesive layer on the side opposite to the substrate in the adhesive sheet precursor.

Description

黏著片的製造方法、切晶-黏晶一體型帶的製造方法、半導體裝置的製造方法、黏著劑的處理方法、被黏著體的固定方法及被黏著體的剝離方法Manufacturing method of adhesive sheet, manufacturing method of integrated die-bonding integrated tape, manufacturing method of semiconductor device, processing method of adhesive, fixing method of adherend and peeling method of adherend

本發明是有關於一種黏著片的製造方法、切晶-黏晶一體型帶的製造方法、半導體裝置的製造方法、黏著劑的處理方法、被黏著體的固定方法及被黏著體的剝離方法。The present invention relates to a method for manufacturing an adhesive sheet, a method for manufacturing a dicing-die bonding integrated tape, a method for manufacturing a semiconductor device, a method for processing an adhesive, a method for fixing an adherend, and a method for peeling an adherend.

黏著劑用於工業領域的各種用途中。於工業上，通常藉由調整交聯密度來控制黏著力（由交聯密度等引起的黏著劑自身的體（bulk）特性）。Adhesives are used in various applications in the industrial field. In industry, the adhesive force is usually controlled by adjusting the crosslink density (bulk characteristics of the adhesive itself caused by the crosslink density, etc.).

另一方面，已知有藉由對被黏著體實施表面處理來提高被黏著體與黏著劑的黏著性的方法。例如，於專利文獻1中記載有藉由對合成樹脂製品（被黏著體）實施電漿處理，從而合成樹脂製品與塗膜的黏著性提高。另外，於專利文獻2中記載有：於黏著片中，藉由對塑膠膜基材（被黏著體）實施電漿處理等而可提高塑膠膜基材表面對黏著劑層的錨固性。該些專利文獻中，就提高黏著性的觀點而言，均揭示有對被黏著體實施表面處理。 [現有技術文獻] [專利文獻]On the other hand, a method of improving the adhesion between the adherend and the adhesive by performing surface treatment on the adherend is known. For example, Patent Document 1 describes that by performing a plasma treatment on a synthetic resin product (adherent body), the adhesion between the synthetic resin product and the coating film is improved. In addition, Patent Document 2 describes that by applying plasma treatment to the plastic film base material (to-be-adhered body) in the adhesive sheet, the anchoring property of the surface of the plastic film base material to the adhesive layer can be improved. In these patent documents, from the viewpoint of improving adhesion, it is disclosed that the adherend is subjected to surface treatment. [Prior Art Literature] [Patent Literature]

專利文獻1：日本專利特開昭59-100143號公報 專利文獻2：日本專利特開2011-068718號公報Patent Document 1: Japanese Patent Laid-Open No. 59-100143 Patent Document 2: Japanese Patent Laid-Open No. 2011-068718

[發明所欲解決之課題] 但是，現有的黏著劑於黏著力的方面尚有改善的餘地。因此，本發明的主要目的在於提供一種黏著片的製造方法，其能夠製造具有黏著力優異的黏著劑層的黏著片。 [解決課題之手段][Problems to be solved by the invention] However, the existing adhesives still have room for improvement in terms of adhesion. Therefore, the main object of the present invention is to provide a method for manufacturing an adhesive sheet capable of manufacturing an adhesive sheet having an adhesive layer excellent in adhesion. [Means to solve the problem]

作為被黏著體與黏著劑的黏著性的影響因素，除了黏著劑的黏著力（黏著劑自身的體特性）以外，亦有黏著劑相對於被黏著體的親和容易度（潤濕性）。但是，根據本發明者等人的研究而判明：於調整黏著劑的交聯密度來控制黏著劑的黏著力的方法中，黏著力與潤濕性存在所謂的權衡（trade off）的關係。例如，若以黏著力提高的方式調整交聯密度，則顯示出黏著劑對被黏著體的潤濕性下降的傾向。並且，基於該見解進一步研究的結果發現，藉由對黏著劑層實施電漿處理而非對被黏著體實施電漿處理，可降低被處理面的接觸角，提高黏著力，從而完成本發明。As an influencing factor of the adhesion between the adherend and the adhesive, in addition to the adhesive strength of the adhesive (the body characteristics of the adhesive itself), there is also the ease of affinity (wetting) of the adhesive relative to the adherend. However, according to the research of the present inventors and others, it has been found that in the method of adjusting the cross-linking density of the adhesive to control the adhesive strength of the adhesive, there is a so-called trade off relationship between the adhesive strength and wettability. For example, if the crosslink density is adjusted so that the adhesive strength is increased, the wettability of the adhesive to the adherend tends to decrease. Furthermore, based on the results of further research on this insight, it was found that by applying plasma treatment to the adhesive layer instead of applying plasma treatment to the adherend, the contact angle of the treated surface can be reduced, and the adhesion can be improved, thereby completing the present invention.

本發明的一方面提供一種黏著片的製造方法，包括：準備黏著片前驅物的步驟，所述黏著片前驅物具有基材及設置於基材上的黏著劑層；以及對黏著片前驅物中的黏著劑層的與基材相反一側的面實施電漿處理的步驟。An aspect of the present invention provides a method for manufacturing an adhesive sheet, including: a step of preparing an adhesive sheet precursor, the adhesive sheet precursor having a substrate and an adhesive layer disposed on the substrate; and an adhesive sheet precursor The surface of the adhesive layer on the side opposite to the substrate is subjected to a plasma treatment step.

電漿處理可為使用大氣壓電漿的電漿處理。電漿處理的處理溫度可低於基材的熔點或黏著劑層的熔點中任一較低者的溫度。The plasma treatment may be plasma treatment using atmospheric piezoelectric plasma. The processing temperature of the plasma treatment may be lower than the lower one of the melting point of the base material or the melting point of the adhesive layer.

黏著片的製造方法可進而包括於已實施電漿處理的黏著劑層的與基材相反一側的面上貼附保護材的步驟。保護材可為貼附於已實施電漿處理的黏著劑層一側的面藉由電漿處理進行了處理者。The manufacturing method of the adhesive sheet may further include a step of attaching a protective material to the surface of the adhesive layer that has been subjected to the plasma treatment on the side opposite to the substrate. The protective material may be a surface that is attached to the side of the adhesive layer that has undergone the plasma treatment and has been treated by the plasma treatment.

於另一方面，本發明提供一種藉由所述製造方法而獲得的黏著片。In another aspect, the present invention provides an adhesive sheet obtained by the manufacturing method.

於又一方面，本發明提供一種切晶-黏晶一體型帶的製造方法，包括：對於藉由所述製造方法而獲得的黏著片，於已實施電漿處理的黏著劑層的與基材相反一側的面上形成接著劑層的步驟。In still another aspect, the present invention provides a method for manufacturing an integrated die-bonding die-bonding tape, including: for an adhesive sheet obtained by the manufacturing method, an adhesive layer and a substrate that have undergone plasma treatment The step of forming an adhesive layer on the surface on the opposite side.

於又一方面，本發明提供一種藉由所述製造方法而獲得的切晶-黏晶一體型帶。In yet another aspect, the present invention provides a die-bonded integrated tape obtained by the manufacturing method.

於又一方面，本發明提供一種半導體裝置的製造方法，包括：將藉由所述製造方法而獲得的切晶-黏晶一體型帶的接著劑層貼附於半導體晶圓的步驟；將半導體晶圓、接著劑層及已實施電漿處理的黏著劑層單片化的步驟；自已實施電漿處理的所述黏著劑層拾取附著有接著劑層的半導體元件的步驟；以及經由接著劑層，將半導體元件接著於半導體元件搭載用支撐基板的步驟。In yet another aspect, the present invention provides a method for manufacturing a semiconductor device, comprising: a step of attaching an adhesive layer of a dicing-bonding integrated tape obtained by the manufacturing method to a semiconductor wafer; attaching a semiconductor Wafer, adhesive layer, and plasma-processed adhesive layer singulation step; picking up the semiconductor device with the adhesive layer attached from the plasma-processed adhesive layer; and via the adhesive layer The step of attaching the semiconductor element to the support substrate for mounting the semiconductor element.

於又一方面，本發明提供一種黏著劑的處理方法，包括：對黏著劑實施電漿處理的步驟。電漿處理可為使用大氣壓電漿的電漿處理。電漿處理的處理溫度可低於黏著劑的熔點。In yet another aspect, the present invention provides a method for treating an adhesive, including: performing a plasma treatment on the adhesive. The plasma treatment may be plasma treatment using atmospheric piezoelectric plasma. The processing temperature of plasma treatment can be lower than the melting point of the adhesive.

於又一方面，本發明提供一種被黏著體的固定方法，包括：經由藉由所述方法進行了處理的黏著劑，將第二被黏著體貼附於第一被黏著體的步驟。另外，於又一方面，本發明提供一種被黏著體的剝離方法，包括：利用水來對藉由所述方法進行了固定的被黏著體的第一被黏著體與黏著劑的界面或第二被黏著體與黏著劑的界面的至少一者進行處理，將第一被黏著體及第二被黏著體剝離的步驟。 [發明的效果]In still another aspect, the present invention provides a method for fixing an adherend, including the step of attaching the second adherend to the first adherend via the adhesive processed by the method. In addition, in yet another aspect, the present invention provides a method for peeling an adherend, which includes: using water to fix the interface between the first adherend and the adhesive of the adherend fixed by the method or the second A step of peeling off the first adherend and the second adherend by processing at least one of the interface between the adherend and the adhesive. [Effect of invention]

根據本發明，可提供一種黏著片的製造方法，其能夠製造具有黏著力優異的黏著劑層的黏著片。另外，根據本發明，可提供一種使用藉由此種製造方法而獲得的黏著片的切晶-黏晶一體型帶的製造方法。另外，根據本發明，可提供一種使用藉由此種製造方法而獲得的切晶-黏晶一體型帶的半導體裝置製造方法。進而，根據本發明，可提供一種黏著劑的處理方法、被黏著體的固定方法及被黏著體的剝離方法。According to the present invention, it is possible to provide a method for manufacturing an adhesive sheet capable of manufacturing an adhesive sheet having an adhesive layer excellent in adhesive force. In addition, according to the present invention, it is possible to provide a method for manufacturing a dicing-bonding integrated tape using the adhesive sheet obtained by such a manufacturing method. In addition, according to the present invention, it is possible to provide a method for manufacturing a semiconductor device using the die-bonded integrated tape obtained by such a manufacturing method. Furthermore, according to the present invention, a method for treating an adhesive, a method for fixing an adherend, and a method for peeling an adherend can be provided.

以下，適宜參照圖式來對本發明的實施形態進行說明。但本發明並不限定於以下實施形態。以下實施形態中，除特別明示的情況以外，其構成要素（亦包含步驟等）並非必需。各圖中的構成要素的大小為概念性的大小，構成要素間的大小的相對關係並不限定於各圖所示的關係。Hereinafter, embodiments of the present invention will be described as appropriate with reference to the drawings. However, the present invention is not limited to the following embodiments. In the following embodiments, the constituent elements (including steps, etc.) are not necessary except when specifically stated. The size of the constituent elements in each drawing is a conceptual size, and the relative relationship between the sizes of the constituent elements is not limited to the relationship shown in each drawing.

本說明書中的數值及其範圍亦同樣如此，並非限制本發明者。本說明書中，使用「～」來表示的數值範圍表示包含「～」的前後所記載的數值分別作為最小值及最大值的範圍。於本說明書中階段性地記載的數值範圍內，一數值範圍所記載的上限值或下限值亦可替換成另一階段記載的數值範圍的上限值或下限值。另外，於本說明書中所記載的數值範圍內，該數值範圍的上限值或下限值可替換成實施例中所示的值。The same applies to the numerical values and ranges in this specification, and do not limit the inventors. In this specification, the numerical range indicated by "~" indicates a range including the numerical values described before and after "~" as the minimum value and the maximum value, respectively. Within the numerical range described in stages in this specification, the upper limit or lower limit described in one numerical range may be replaced with the upper limit or lower limit of the numerical range described in another stage. In addition, within the numerical range described in this specification, the upper limit value or the lower limit value of the numerical range can be replaced with the values shown in the examples.

於本說明書中，(甲基)丙烯酸酯是指丙烯酸酯或與其對應的甲基丙烯酸酯。In this specification, (meth)acrylate refers to acrylate or methacrylate corresponding thereto.

[黏著片的製造方法] 圖1（a）～圖1（d）是示意性表示黏著片的製造方法的一實施形態的剖面圖。本實施形態的黏著片的製造方法包括：準備具有基材及設置於基材上的黏著劑層的黏著片前驅物的步驟（黏著片前驅物的準備步驟）；以及對黏著片前驅物中的黏著劑層的與基材相反一側的面實施電漿處理的步驟（電漿處理的實施步驟）。本實施形態的黏著片的製造方法可進而包括於已實施電漿處理的黏著劑層的與基材相反一側的面上貼附保護材的步驟（保護材的配置步驟）。[Manufacturing method of adhesive sheet] 1(a) to 1(d) are cross-sectional views schematically showing an embodiment of a method for manufacturing an adhesive sheet. The manufacturing method of the adhesive sheet of this embodiment includes: a step of preparing an adhesive sheet precursor having a substrate and an adhesive layer provided on the substrate (preparation step of adhesive sheet precursor); and The step of performing the plasma treatment on the surface of the adhesive layer opposite to the base material (implementation step of plasma treatment). The manufacturing method of the adhesive sheet of this embodiment may further include a step of attaching a protective material to the surface of the adhesive layer that has been subjected to the plasma treatment on the side opposite to the substrate (arrangement step of the protective material).

＜黏著片前驅物的準備步驟＞ 於本步驟中，準備作為電漿處理的對象的黏著片前驅物100（參照圖1（a））。黏著片前驅物100具有基材10、及設置於基材10上的黏著劑層20。<Preparation steps for adhesive sheet precursors> In this step, the adhesive sheet precursor 100 (see FIG. 1( a )) that is the target of plasma processing is prepared. The adhesive sheet precursor 100 has a base material 10 and an adhesive layer 20 provided on the base material 10.

基材10只要為具有較藉由電漿處理而產生的熱更高的熔點（或者分解點或軟化點）者，則並無特別限制，可使用在黏著劑的領域中所使用的基材膜。基材膜較佳為於黏晶步驟中能夠擴張（expand）。作為此種基材膜，例如可列舉：聚對苯二甲酸乙二酯膜等聚酯系膜；聚四氟乙烯膜、聚乙烯膜、聚丙烯膜、聚甲基戊烯膜、聚乙酸乙烯酯膜等聚烯烴系膜；聚氯乙烯膜、聚醯亞胺膜等塑膠膜等。基材10可對供形成黏著劑層20的面實施電暈處理等表面處理。The base material 10 is not particularly limited as long as it has a higher melting point (or decomposition point or softening point) than the heat generated by plasma treatment, and a base film used in the field of adhesives can be used . The base film is preferably expandable in the crystal bonding step. Examples of such a base film include polyester-based films such as polyethylene terephthalate film; polytetrafluoroethylene film, polyethylene film, polypropylene film, polymethylpentene film, and polyvinyl acetate Polyolefin-based films such as ester films; plastic films such as polyvinyl chloride films and polyimide films. The substrate 10 may be subjected to surface treatment such as corona treatment on the surface on which the adhesive layer 20 is formed.

黏著劑層20是包含黏著劑成分的層。構成黏著劑層20的黏著劑成分只要為具有較藉由電漿處理而產生的熱更高的熔點（或者分解點或軟化點）者，則並無特別限制，較佳為於室溫（25℃）下具有黏著力，且對積層於黏著劑層20上的層（例如後述的接著劑層）具有密接力者。構成黏著劑層20的黏著劑成分亦可含有基體樹脂（base resin）。作為基體樹脂，例如可列舉丙烯酸系樹脂、合成橡膠、天然橡膠、聚醯亞胺樹脂等。就減少黏著劑成分的殘膠的觀點而言，基體樹脂較佳為具有可與後述的交聯劑等反應的羥基、羧基等官能基。基體樹脂可為藉由紫外線、放射線等高能量射線而硬化的樹脂或者藉由熱而硬化的樹脂。基體樹脂較佳為藉由高能量射線而硬化者，更佳為藉由紫外線而硬化者（紫外線硬化型基體樹脂）。The adhesive layer 20 is a layer containing an adhesive component. The adhesive component constituting the adhesive layer 20 is not particularly limited as long as it has a higher melting point (or decomposition point or softening point) than heat generated by plasma treatment, and is preferably at room temperature (25 ℃) It has adhesive force and has adhesive force to the layer (for example, the adhesive layer described later) laminated on the adhesive layer 20. The adhesive component constituting the adhesive layer 20 may contain a base resin. Examples of the matrix resin include acrylic resins, synthetic rubbers, natural rubbers, and polyimide resins. From the viewpoint of reducing the residue of the adhesive component, the matrix resin preferably has a functional group such as a hydroxyl group and a carboxyl group that can react with a crosslinking agent or the like described below. The base resin may be a resin hardened by high-energy rays such as ultraviolet rays and radiation, or a resin hardened by heat. The base resin is preferably hardened by high-energy rays, and more preferably hardened by ultraviolet rays (ultraviolet-curable base resin).

於使用藉由高能量射線而硬化的樹脂作為基體樹脂的情況下，亦可視需要而併用光聚合起始劑。光聚合起始劑例如可列舉：芳香族酮化合物、安息香醚化合物、苯偶醯化合物、酯化合物、吖啶化合物、2,4,5-三芳基咪唑二聚物等。In the case where a resin hardened by high-energy rays is used as a matrix resin, a photopolymerization initiator may be used in combination as necessary. Examples of the photopolymerization initiator include aromatic ketone compounds, benzoin ether compounds, benzoyl compounds, ester compounds, acridine compounds, and 2,4,5-triarylimidazole dimers.

為了調整黏著力，黏著劑成分亦可含有能夠與基體樹脂的官能基形成交聯結構的交聯劑。交聯劑較佳為具有選自由環氧基、異氰酸酯基、氮丙啶基及三嗪基所組成的群組中的至少一種官能基。交聯劑可單獨使用一種，亦可組合使用兩種以上。In order to adjust the adhesive force, the adhesive component may also contain a cross-linking agent capable of forming a cross-linked structure with the functional group of the matrix resin. The crosslinking agent preferably has at least one functional group selected from the group consisting of epoxy groups, isocyanate groups, aziridine groups, and triazine groups. One type of crosslinking agent may be used alone, or two or more types may be used in combination.

為了維持由電漿處理所帶來的效果，有效的是調整交聯劑的含量。相對於基體樹脂100質量份，交聯劑的含量較佳為5質量份以上，更佳為7質量份以上，進而佳為10質量份以上。若相對於基體樹脂100質量份而交聯劑的含量為5質量份以上，則有可抑制由電漿處理所帶來的效果衰減的傾向。相對於基體樹脂100質量份，交聯劑的含量可為30質量份以下。若相對於基體樹脂100質量份而交聯劑的含量為30質量份以下，則有容易維持由電漿處理所帶來的效果的傾向，且有可抑制黏著劑層與保護材的密接性下降的傾向。In order to maintain the effect brought about by the plasma treatment, it is effective to adjust the content of the crosslinking agent. The content of the crosslinking agent is preferably 5 parts by mass or more, more preferably 7 parts by mass or more, and still more preferably 10 parts by mass or more with respect to 100 parts by mass of the matrix resin. If the content of the crosslinking agent is 5 parts by mass or more with respect to 100 parts by mass of the matrix resin, the effect of the plasma treatment tends to be suppressed from being attenuated. The content of the crosslinking agent may be 30 parts by mass or less relative to 100 parts by mass of the matrix resin. If the content of the crosslinking agent is 30 parts by mass or less with respect to 100 parts by mass of the matrix resin, the effect of plasma treatment tends to be easily maintained, and the decrease in adhesion between the adhesive layer and the protective material can be suppressed Propensity.

黏著劑成分亦可含有其他成分。作為其他成分，例如可列舉：以促進基體樹脂與光聚合起始劑的交聯反應為目的而添加的胺、錫等觸媒；以適當地調整黏著特性為目的而添加的松香系、萜烯樹脂系等增黏劑（tackifier）；各種界面活性劑等。The adhesive component may also contain other components. As other components, for example, catalysts such as amine and tin added for the purpose of promoting the crosslinking reaction of the matrix resin and the photopolymerization initiator; rosin series and terpene added for the purpose of appropriately adjusting the adhesive properties Tackifiers such as resins; various surfactants, etc.

於一實施形態中，黏著劑層20可為包含如下黏著劑成分的層，所述黏著劑成分含有具有羥基的丙烯酸系樹脂及具有異氰酸酯基的交聯劑。In one embodiment, the adhesive layer 20 may be a layer containing an adhesive component containing an acrylic resin having a hydroxyl group and a crosslinking agent having an isocyanate group.

作為基體樹脂的具有羥基的丙烯酸系樹脂，可藉由使包含具有羥基的(甲基)丙烯酸酯的單體成分聚合而獲得。聚合方法可自各種自由基聚合等公知的聚合方法中適宜選擇，例如可為懸浮聚合法、溶液聚合法、塊狀聚合法等。The acrylic resin having a hydroxyl group as a matrix resin can be obtained by polymerizing a monomer component containing a (meth)acrylate having a hydroxyl group. The polymerization method can be appropriately selected from known polymerization methods such as various radical polymerizations, and for example, a suspension polymerization method, a solution polymerization method, and a bulk polymerization method can be used.

於所述聚合方法中使單體成分聚合的情況下，亦可視需要而使用聚合起始劑。作為此種聚合起始劑，例如可列舉：過氧化酮、過氧化縮酮、過氧化氫、二烷基過氧化物、二醯基過氧化物、過氧化碳酸酯、過氧化酯、2,2'-偶氮雙異丁腈、2,2'-偶氮雙(2,4-二甲基戊腈)、2,2'-偶氮雙(4-甲氧基-2'-二甲基戊腈)等。In the case of polymerizing the monomer component in the polymerization method, a polymerization initiator may be used as necessary. Examples of such a polymerization initiator include ketone peroxide, ketal peroxide, hydrogen peroxide, dialkyl peroxide, diacyl peroxide, peroxycarbonate, and peroxyester. 2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), 2,2'-azobis(4-methoxy-2'-dimethyl Valeronitrile) and so on.

具有黏著劑層20的黏著片前驅物100可使用公知的方法進行製造。黏著片前驅物100例如可藉由以下製造方法而獲得，所述製造方法包括：利用分散介質來稀釋黏著劑層用的材料，製備清漆的步驟；將所得的清漆塗敷於所述基材10上的步驟；以及自所塗敷的清漆中去除分散介質的步驟。The adhesive sheet precursor 100 having the adhesive layer 20 can be manufactured using a known method. The adhesive sheet precursor 100 can be obtained by, for example, a manufacturing method including: a step of diluting the material for the adhesive layer with a dispersion medium to prepare a varnish; and applying the resulting varnish to the substrate 10 The steps above; and the step of removing the dispersion medium from the applied varnish.

黏著片前驅物100中的黏著劑層20的厚度可為0.1 μm～30 μm。若黏著劑層20的厚度為0.1 μm以上，則有可確保充分的黏著力的傾向。若黏著劑層20的厚度為30 μm以下，則有經濟上有利的傾向。The thickness of the adhesive layer 20 in the adhesive sheet precursor 100 may be 0.1 μm to 30 μm. If the thickness of the adhesive layer 20 is 0.1 μm or more, there is a tendency to ensure sufficient adhesive force. If the thickness of the adhesive layer 20 is 30 μm or less, it tends to be economically advantageous.

黏著片前驅物100整體的厚度（基材10及黏著劑層20的合計厚度）可為5 μm～150 μm、50 μm～150 μm或100 μm～150 μm。The thickness of the entire adhesive sheet precursor 100 (total thickness of the base material 10 and the adhesive layer 20) may be 5 μm to 150 μm, 50 μm to 150 μm, or 100 μm to 150 μm.

黏著片前驅物100可於實施電漿處理之前，於黏著劑層20的與基材10相反一側的面上貼附有保護材。保護材可使用與後述的保護材30中所例示者相同的保護材。Before performing the plasma treatment, the adhesive sheet precursor 100 may be attached with a protective material on the surface of the adhesive layer 20 opposite to the substrate 10. As the protective material, the same protective material as exemplified in the protective material 30 described later can be used.

＜電漿處理的實施步驟＞ 於本步驟中，對黏著片前驅物100中的黏著劑層20的與基材10相反一側的面實施電漿處理（圖1（b）的A）（參照圖1（b））。藉此，可製造具有已實施電漿處理A的黏著劑層（電漿處理後的黏著劑層20A）的黏著片110（參照圖1（c））。<Implementation steps of plasma treatment> In this step, the surface of the adhesive layer 20 of the adhesive sheet precursor 100 on the side opposite to the base material 10 is subjected to plasma treatment (A in FIG. 1(b)) (see FIG. 1(b)). Thereby, the adhesive sheet 110 (refer FIG.1(c)) which has the adhesive layer (plasma layer 20A after plasma processing) which has performed the plasma process A can be manufactured.

電漿為構成氣體的分子部分地或完全地電離，分成陽離子及電子而自由地運動的狀態。藉由使用電漿狀態的氣體來對黏著劑層的與基材相反一側的面進行處理，而於黏著劑層的表面進行化學反應，賦予含氧的親水性基，被處理面的接觸角降低，可提高潤濕性。利用該反應，能夠提高黏著片前驅物的黏著劑層20的黏著力。Plasma is a state in which the molecules constituting the gas are partially or completely ionized, separated into cations and electrons, and move freely. The surface of the adhesive layer opposite to the substrate is treated by using gas in the plasma state, and a chemical reaction is performed on the surface of the adhesive layer to give an oxygen-containing hydrophilic group, and the contact angle of the treated surface Lower, can improve wettability. By this reaction, the adhesive force of the adhesive layer 20 of the adhesive sheet precursor can be improved.

電漿處理並無特別限制，就成本、處理能力、及減少損傷的觀點而言，可為使用大氣壓電漿的電漿處理。使用大氣壓電漿的電漿處理例如可使用超高密度大氣壓電漿單元（富士機械製造股份有限公司製造，商品名：FPB-20 型號II（TYPE II））來實施。Plasma treatment is not particularly limited, and in terms of cost, processing capacity, and damage reduction, plasma treatment using atmospheric piezoelectric plasma may be used. The plasma treatment using the atmospheric pressure plasma can be performed using, for example, an ultra-high density atmospheric pressure plasma unit (manufactured by Fuji Machinery Manufacturing Co., Ltd., trade name: FPB-20 type II (TYPE II)).

關於電漿處理的處理溫度，就避免因電漿處理而對基材10及黏著劑層20造成損傷的觀點而言，較佳為以低於基材10的熔點或黏著劑層20的熔點中任一較低者的溫度來進行。電漿處理較佳為以在進行處理的時間內黏著片前驅物100（基材10及黏著劑層20）不產生褶皺、撓曲等的方式，即，黏著片不顯著地發生熱變形的方式，一邊調整處理溫度、處理速度等條件一邊進行。若產生褶皺、撓曲等，則有妨礙電漿處理時的裝置運轉之虞。電漿處理的溫度條件例如可為300℃以下、250℃以下、或200℃以下。Regarding the processing temperature of the plasma treatment, from the viewpoint of avoiding damage to the base material 10 and the adhesive layer 20 due to the plasma treatment, it is preferably lower than the melting point of the base material 10 or the melting point of the adhesive layer 20 Either lower temperature. The plasma treatment is preferably such that the adhesive sheet precursor 100 (the base material 10 and the adhesive layer 20) does not cause wrinkles, deflection, etc. during the processing time, that is, the adhesive sheet does not significantly thermally deform , While adjusting the processing temperature, processing speed and other conditions. If wrinkles, deflection, etc. occur, there is a possibility that the operation of the device during plasma treatment is hindered. The temperature conditions of the plasma treatment may be, for example, 300°C or lower, 250°C or lower, or 200°C or lower.

電漿處理可調整處理面積。因此，可對黏著片前驅物100中的黏著劑層20的與基材10相反一側的面的一部分或全部實施電漿處理。若對黏著劑層20的面的一部分實施電漿處理，則由於可調整被處理面的接觸角，而可於同一面，容易地分開形成接觸角低的部分（即，黏著劑層的黏著力高的部分）及接觸角高的部分（即，黏著劑層的黏著力低的部分）。Plasma treatment can adjust the treatment area. Therefore, a part or all of the surface of the adhesive layer 20 on the side opposite to the base material 10 in the adhesive sheet precursor 100 may be subjected to plasma treatment. If plasma treatment is performed on a part of the surface of the adhesive layer 20, since the contact angle of the surface to be treated can be adjusted, the part with a low contact angle can be easily formed on the same surface (ie, the adhesive force of the adhesive layer) The high part) and the part with high contact angle (ie, the part with low adhesion of the adhesive layer).

＜保護材的配置步驟＞ 本步驟中，於已實施電漿處理的黏著劑層（電漿處理後的黏著劑層20A）的與基材10相反一側的面上貼附保護材30（參照圖1（d））。藉此，可獲得帶保護材的黏著片120。貼附保護材30的方法可使用公知的方法來進行貼附。＜Procedure for disposing protective materials＞ In this step, the protective material 30 is attached to the surface of the adhesive layer that has been subjected to the plasma treatment (the adhesive layer 20A after the plasma treatment) opposite to the base material 10 (see FIG. 1( d )). Thereby, the adhesive sheet 120 with a protective material can be obtained. The method of attaching the protective material 30 can be attached using a known method.

保護材30並無特別限制，可使用在黏著劑的領域中所使用的保護膜。作為保護膜，例如可列舉：聚對苯二甲酸乙二酯膜等聚酯系膜；聚四氟乙烯膜、聚乙烯膜、聚丙烯膜、聚甲基戊烯膜、聚乙酸乙烯酯膜等聚烯烴系膜；聚氯乙烯膜、聚醯亞胺膜等塑膠膜等。另外，保護膜可使用紙、不織布、金屬箔等。保護材30的電漿處理後的黏著劑層20A側的面，亦可藉由矽酮系剝離劑、氟系剝離劑、長鏈烷基丙烯酸酯系剝離劑等脫模劑來進行處理。The protective material 30 is not particularly limited, and a protective film used in the field of adhesives can be used. Examples of the protective film include polyester-based films such as polyethylene terephthalate film; polytetrafluoroethylene film, polyethylene film, polypropylene film, polymethylpentene film, and polyvinyl acetate film. Polyolefin film; PVC film, polyimide film and other plastic films. In addition, paper, nonwoven fabric, metal foil, etc. can be used for the protective film. The surface of the adhesive layer 20A side after the plasma treatment of the protective material 30 may also be treated with a release agent such as a silicone-based release agent, a fluorine-based release agent, and a long-chain alkyl acrylate-based release agent.

保護材30可為保護材30的貼附於電漿處理後的黏著劑層20A一側的面藉由電漿處理進行了處理者。藉由使用利用電漿處理進行了處理者作為保護材30，而有可長期維持電漿處理後的黏著劑層20A的潤濕性提高的狀態的傾向。The protective material 30 may be a surface of the protective material 30 that is attached to the side of the adhesive layer 20A after plasma treatment by plasma treatment. By using a person who has been treated by plasma treatment as the protective material 30, there is a tendency that the wettability of the adhesive layer 20A after plasma treatment can be maintained for a long time.

保護材30的厚度並無特別限制，可為5 μm～500 μm、10 μm～200 μm或15 μm～100 μm。The thickness of the protective material 30 is not particularly limited, and may be 5 μm to 500 μm, 10 μm to 200 μm, or 15 μm to 100 μm.

[切晶-黏晶一體型帶的製造方法] 圖2（a）～圖2（c）是示意性地表示切晶-黏晶一體型帶的製造方法的一實施形態的剖面圖。本實施形態的切晶-黏晶一體型帶130的製造方法包括：對於藉由所述製造方法而獲得的黏著片110，於電漿處理後的黏著劑層20A的與基材10相反一側的面（已實施電漿處理的面）上形成接著劑層40的步驟（參照圖2（a）、圖2（b））。[Manufacturing method of integrated crystal cutting and crystal bonding] FIGS. 2( a) to 2 (c) are cross-sectional views schematically showing an embodiment of a method for manufacturing a die-bonded integrated tape. The manufacturing method of the die-bonding integrated tape 130 of the present embodiment includes the adhesive sheet 110 obtained by the manufacturing method on the side of the adhesive layer 20A opposite to the base material 10 after plasma treatment The step of forming the adhesive layer 40 on the surface (the surface subjected to the plasma treatment) (see FIGS. 2(a) and 2(b)).

接著劑層40是包含接著劑成分的層。作為構成接著劑層40的接著劑成分，例如可列舉：熱硬化性接著劑成分、光硬化性接著劑成分、熱塑性接著劑成分、氧反應性接著劑成分等。就接著性的觀點而言，接著劑層較佳為包含熱硬化性接著劑成分。The adhesive layer 40 is a layer containing an adhesive component. Examples of the adhesive component constituting the adhesive layer 40 include a thermosetting adhesive component, a photocurable adhesive component, a thermoplastic adhesive component, and an oxygen-reactive adhesive component. From the viewpoint of adhesiveness, the adhesive layer preferably contains a thermosetting adhesive component.

就接著性的觀點而言，熱硬化性接著劑成分較佳為包含環氧樹脂及可成為環氧樹脂的硬化劑的酚樹脂。From the viewpoint of adhesiveness, the thermosetting adhesive component is preferably a phenol resin containing an epoxy resin and a hardener that can become an epoxy resin.

環氧樹脂只要為分子內具有環氧基者，則可並無特別限制地使用。作為環氧樹脂，例如可列舉：雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、雙酚A酚醛清漆型環氧樹脂、雙酚F酚醛清漆型環氧樹脂、含二環戊二烯骨架的環氧樹脂、二苯乙烯型環氧樹脂、含三嗪骨架的環氧樹脂、含茀骨架的環氧樹脂、三苯酚甲烷型環氧樹脂、聯苯型環氧樹脂、伸二甲苯基型環氧樹脂、聯苯芳烷基型環氧樹脂、萘型環氧樹脂、多官能酚類、蒽等多環芳香族類的二縮水甘油醚化合物等。該些可單獨使用一種或將兩種以上組合使用。以接著劑層總量為基準，環氧樹脂的含量可為2質量%～50質量%。The epoxy resin can be used without particular limitation as long as it has an epoxy group in the molecule. Examples of the epoxy resin include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, phenol novolac epoxy resin, cresol novolac epoxy resin, Bisphenol A novolac epoxy resin, bisphenol F novolac epoxy resin, epoxy resin containing dicyclopentadiene skeleton, stilbene epoxy resin, epoxy resin containing triazine skeleton, containing Fusi skeleton epoxy resin, triphenol methane epoxy resin, biphenyl epoxy resin, xylylene epoxy resin, biphenyl aralkyl epoxy resin, naphthalene epoxy resin, polyfunctional phenols , Anthracene and other polycyclic aromatic diglycidyl ether compounds. These can be used alone or in combination of two or more. Based on the total amount of the adhesive layer, the content of the epoxy resin can be 2% by mass to 50% by mass.

酚樹脂只要為分子內具有酚性羥基者，則可並無特別限制地使用。作為酚樹脂，例如可列舉：苯酚、甲酚、間苯二酚、鄰苯二酚、雙酚A、雙酚F、苯基苯酚、胺基苯酚等酚類及/或α-萘酚、β-萘酚、二羥基萘等萘酚類與甲醛等具有醛基的化合物，於酸性觸媒下縮合或共縮合而獲得的酚醛清漆型酚樹脂；由烯丙基化雙酚A、烯丙基化雙酚F、烯丙基化萘二醇、苯酚酚醛清漆、苯酚等酚類及/或萘酚類與二甲氧基對二甲苯或雙(甲氧基甲基)聯苯所合成的苯酚芳烷基樹脂、萘酚芳烷基樹脂等。該些可單獨使用一種或將兩種以上組合使用。以接著劑層總量為基準，酚樹脂的含量可為2質量%～50質量%。As long as the phenol resin has a phenolic hydroxyl group in the molecule, it can be used without particular limitation. Examples of phenol resins include phenols such as phenol, cresol, resorcinol, catechol, bisphenol A, bisphenol F, phenylphenol, and aminophenol, and/or α-naphthol, β -Novolac type phenol resin obtained by condensation or co-condensation of naphthols such as naphthol, dihydroxynaphthalene and formaldehyde with formaldehyde and other compounds under acid catalyst; Bisphenol F, allylated naphthalenediol, phenol novolak, phenol and other phenols and/or naphthols and dimethoxy-p-xylene or bis (methoxymethyl) biphenyl synthesis of phenol Aralkyl resin, naphthol aralkyl resin, etc. These can be used alone or in combination of two or more. Based on the total amount of the adhesive layer, the content of the phenol resin may be 2-50% by mass.

作為其他成分，接著劑層40亦可包含：三級胺、咪唑類、四級銨鹽類等硬化促進劑；氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、硼酸鋁晶鬚、氮化硼、結晶質二氧化矽、非晶質二氧化矽等無機填料等。以接著劑層總量為基準，其他成分的含量可為0質量%～20質量%。As other components, the adhesive layer 40 may also contain: tertiary amines, imidazoles, quaternary ammonium salts and other hardening accelerators; aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate , Calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, crystalline silicon dioxide, amorphous silicon dioxide and other inorganic fillers. Based on the total amount of the adhesive layer, the content of other components may be 0% by mass to 20% by mass.

於黏著片110中，對黏著劑層20的與基材10相反一側的面的一部分或全部實施電漿處理。於對黏著劑層20的與基材10相反一側的面的一部分實施電漿處理的情況下，接著劑層40可以覆蓋黏著劑層20的已實施電漿處理的面的一部分或全部的方式形成，亦可以覆蓋黏著劑層20的未實施電漿處理的面的一部分或全部的方式形成。另外，接著劑層40亦可以覆蓋黏著劑層20的已實施電漿處理的面及黏著劑層20的未實施電漿處理的面兩方的面的一部分或全部的方式形成。於對黏著劑層20的全部實施電漿處理的情況下，接著劑層40可以覆蓋黏著劑層20的已實施電漿處理的面的一部分或全部的方式形成。In the adhesive sheet 110, a part or all of the surface of the adhesive layer 20 on the side opposite to the base material 10 is subjected to plasma treatment. In the case where a part of the surface of the adhesive layer 20 opposite to the base material 10 is subjected to plasma treatment, the adhesive layer 40 may cover part or all of the surface of the adhesive layer 20 that has been subjected to plasma treatment The formation may be formed to cover a part or all of the surface of the adhesive layer 20 that is not subjected to plasma treatment. In addition, the adhesive layer 40 may be formed so as to cover a part or all of the surface of the adhesive layer 20 that has been subjected to the plasma treatment and the surface of the adhesive layer 20 that has not been subjected to the plasma treatment. When plasma treatment is performed on all of the adhesive layer 20, the adhesive layer 40 may be formed so as to cover a part or all of the surface of the adhesive layer 20 that has been subjected to the plasma treatment.

作為於電漿處理後的黏著劑層20A的與基材10相反一側的面上形成接著劑層40的方法，例如可列舉：使用公知的方法，將接著劑成分成形為膜狀，將所得的膜狀接著劑貼合於電漿處理後的黏著劑層20A的與基材10相反一側的面的方法。如上所述，可獲得切晶-黏晶一體型帶130（參照圖2（b））。As a method of forming the adhesive layer 40 on the surface of the adhesive layer 20A opposite to the base material 10 after plasma treatment, for example, a known method may be used to shape the adhesive component into a film and obtain The method of bonding the film-like adhesive to the surface of the adhesive layer 20A opposite to the base material 10 after the plasma treatment. As described above, the die-bonded integrated tape 130 can be obtained (see FIG. 2(b)).

切晶-黏晶一體型帶130可於接著劑層40的與黏著劑層20A相反一側的面上具備保護材50。保護材50並無特別限制，可使用切晶-黏晶一體型帶中所使用的保護膜。作為保護膜，例如可列舉：聚對苯二甲酸乙二酯膜等聚酯系膜；聚四氟乙烯膜、聚乙烯膜、聚丙烯膜、聚甲基戊烯膜、聚乙酸乙烯酯膜等聚烯烴系膜；聚氯乙烯膜、聚醯亞胺膜等塑膠膜等。如上所述，可獲得帶保護材的切晶-黏晶一體型帶140（參照圖2（c））。The die-bonded integrated tape 130 may be provided with a protective material 50 on the surface of the adhesive layer 40 opposite to the adhesive layer 20A. The protective material 50 is not particularly limited, and a protective film used in a die-bonded integrated tape can be used. Examples of the protective film include polyester-based films such as polyethylene terephthalate film; polytetrafluoroethylene film, polyethylene film, polypropylene film, polymethylpentene film, and polyvinyl acetate film. Polyolefin film; PVC film, polyimide film and other plastic films. As described above, the crystal-bonded integrated tape 140 with a protective material can be obtained (see FIG. 2( c )).

[半導體裝置（半導體封裝體）的製造方法] 圖3（a）～圖3（f）是示意性表示半導體裝置的製造方法的一實施形態的剖面圖。本實施形態的半導體裝置的製造方法包括：將藉由所述製造方法而獲得的切晶-黏晶一體型帶130的接著劑層40貼附於半導體晶圓W的步驟（晶圓層壓步驟，參照圖3（a）、圖3（b））；將半導體晶圓W、接著劑層40及已實施電漿處理的黏著劑層（電漿處理後的黏著劑層20A）單片化的步驟（切晶步驟，參照圖3（c））；視需要對已實施電漿處理的黏著劑層（電漿處理後的黏著劑層20A）（經由基材10）照射紫外線的步驟（紫外線照射步驟，參照圖3（d））；自已實施電漿處理的黏著劑層（黏著劑層20Aa）拾取附著有接著劑層40a的半導體元件Wa（帶接著劑層的半導體元件60）的步驟（拾取步驟，參照圖3（e））；以及經由接著劑層40a，將帶接著劑層的半導體元件60接著於半導體元件搭載用支撐基板80的步驟（半導體元件接著步驟，參照圖3（f））。[Manufacturing method of semiconductor device (semiconductor package)] 3(a) to 3(f) are cross-sectional views schematically showing an embodiment of a method of manufacturing a semiconductor device. The manufacturing method of the semiconductor device of the present embodiment includes the step of attaching the adhesive layer 40 of the die-bonded integrated tape 130 obtained by the manufacturing method to the semiconductor wafer W (wafer lamination step) , Refer to FIGS. 3(a) and 3(b)); the semiconductor wafer W, the adhesive layer 40, and the plasma-treated adhesive layer (the plasma-treated adhesive layer 20A) are singulated Step (crystal cutting step, refer to FIG. 3(c)); the step of irradiating ultraviolet rays (through the substrate 10) to the adhesive layer (the adhesive layer 20A after plasma treatment) that has been subjected to plasma treatment (via the substrate 10), if necessary Step, refer to FIG. 3(d)); the step of picking up the semiconductor element Wa (semiconductor element 60 with adhesive layer) to which the adhesive layer 40a is attached from the adhesive layer (adhesive layer 20Aa) that has undergone plasma treatment (pick up Step (see FIG. 3(e)); and the step of attaching the semiconductor element 60 with the adhesive layer to the semiconductor substrate mounting support substrate 80 via the adhesive layer 40a (semiconductor element bonding step, see FIG. 3(f)) .

＜晶圓層壓步驟＞ 首先，將切晶-黏晶一體型帶130配置於規定的裝置。繼而，於半導體晶圓W的主面Ws，經由接著劑層40而貼附切晶-黏晶一體型帶130（參照圖3（a）、圖3（b））。半導體晶圓W的電路面較佳為設置於與主面Ws為相反側的面。<wafer lamination step> First, the die-bonding integrated tape 130 is placed in a predetermined device. Then, on the main surface Ws of the semiconductor wafer W, the die-bonding integrated tape 130 is attached via the adhesive layer 40 (see FIGS. 3( a) and 3 (b )). The circuit surface of the semiconductor wafer W is preferably provided on the side opposite to the main surface Ws.

＜切晶步驟＞ 其次，對半導體晶圓W、接著劑層40及電漿處理後的黏著劑層20A進行切晶（參照圖3（c））。此時，亦可將基材10的一部分切晶。如此，切晶-黏晶一體型帶130亦作為切晶片發揮功能。＜Cutting step＞ Next, the semiconductor wafer W, the adhesive layer 40, and the plasma-treated adhesive layer 20A are diced (see FIG. 3(c)). At this time, a part of the base material 10 may be crystallized. In this way, the die-bonding integrated tape 130 also functions as a wafer dicing.

＜紫外線照射步驟＞ 對於電漿處理後的黏著劑層20A，可視需要（經由基材10）照射紫外線（參照圖3（d））。於黏著劑成分中的基體樹脂為藉由紫外線而硬化者（紫外線硬化型基體樹脂）的情況下，該黏著劑層20A硬化，可降低黏著劑層20A與接著劑層40之間的接著力。於紫外線照射中，較佳為使用波長200 nm～400 nm的紫外線。紫外線照射條件較佳為將照度及照射量分別調整為30 mW/cm2 ～240 mW/cm2 的範圍及200 mJ/cm2 ～500 mJ/cm2 的範圍。<Ultraviolet irradiation step> The plasma layer-treated adhesive layer 20A may be irradiated with ultraviolet rays (via the substrate 10) as necessary (see FIG. 3(d)). In the case where the matrix resin in the adhesive component is cured by ultraviolet rays (ultraviolet-curable matrix resin), the adhesive layer 20A is hardened to reduce the adhesive force between the adhesive layer 20A and the adhesive layer 40. In ultraviolet irradiation, it is preferable to use ultraviolet rays with a wavelength of 200 nm to 400 nm. The ultraviolet irradiation conditions are preferably adjusted to the range of 30 mW/cm 2 to 240 mW/cm 2 and the range of 200 mJ/cm 2 to 500 mJ/cm 2 respectively.

＜拾取步驟＞ 其次，藉由將基材10擴張而使經切晶的帶接著劑層的半導體元件60彼此分開，並且利用抽吸夾頭74抽吸自基材10側由頂針72頂起的帶接著層的半導體元件60，且自黏著劑層20Aa進行拾取（參照圖3（e））。於對黏著劑層20的與基材10相反一側的面的一部分實施電漿處理的情況下，黏著劑層20Aa的接著劑層40a側的面可為經實施電漿處理的面，亦可為未實施電漿處理的面，亦可為包括經實施電漿處理的面及未實施電漿處理的面兩方的面。再者，帶接著劑層的半導體元件60具有半導體元件Wa及接著劑層40a。半導體元件Wa為半導體晶圓W藉由切晶而分割出者，接著劑層40a為接著劑層40藉由切晶而分割出者。黏著劑層20Aa為電漿處理後的黏著劑層20A藉由切晶而分割出者。當拾取帶接著劑層的半導體元件60時，黏著劑層20Aa可殘留在基材10上。於拾取步驟中，未必需要將基材10擴張，但藉由將基材10擴張，可進一步提高拾取性。<Pickup step> Next, by expanding the base material 10, the diced semiconductor elements 60 with an adhesive layer are separated from each other, and the suction adhesive chuck 74 sucks the tape-adhesive layer lifted from the base material 10 side by the ejector pin 72. The semiconductor element 60 is picked up from the adhesive layer 20Aa (see FIG. 3(e)). When a part of the surface of the adhesive layer 20 opposite to the base material 10 is subjected to plasma treatment, the surface of the adhesive layer 20Aa on the side of the adhesive layer 40a may be the surface subjected to plasma treatment or The plasma-untreated surface may include both the plasma-treated surface and the plasma-free surface. Furthermore, the semiconductor element 60 with an adhesive layer has a semiconductor element Wa and an adhesive layer 40a. The semiconductor element Wa is a semiconductor wafer W divided by singulation, and the adhesive layer 40a is an adhesive layer 40 divided by slicing. The adhesive layer 20Aa is a plasma-processed adhesive layer 20A separated by crystal cutting. When the semiconductor device 60 with the adhesive layer is picked up, the adhesive layer 20Aa may remain on the substrate 10. In the pickup step, it is not necessary to expand the base material 10, but by expanding the base material 10, the pickup property can be further improved.

由頂針72產生的頂起量可適當設定。進而，就確保對極薄晶圓亦充分的拾取性的觀點而言，例如亦可進行兩段或三段的頂起。另外，亦可藉由使用抽吸夾頭74的方法以外的方法來拾取帶接著劑層的半導體元件60。The amount of ejection by the ejector pin 72 can be set appropriately. Furthermore, from the viewpoint of ensuring sufficient pick-up properties for extremely thin wafers, for example, two-stage or three-stage jacking may be performed. In addition, the semiconductor element 60 with the adhesive layer may be picked up by a method other than the method using the suction chuck 74.

＜半導體元件接著步驟＞ 於拾取帶接著劑層的半導體元件60後，藉由熱壓接並經由接著劑層40a將帶接著劑層的半導體元件60接著於半導體元件搭載用支撐基板80（參照圖3（f））。半導體元件搭載用支撐基板80上可接著多個帶接著劑層的半導體元件60。<Continuous steps of semiconductor element> After picking up the semiconductor element 60 with an adhesive layer, the semiconductor element 60 with an adhesive layer is bonded to the support substrate 80 for semiconductor element mounting by thermocompression bonding via the adhesive layer 40a (refer FIG. 3(f)). A plurality of semiconductor elements 60 with an adhesive layer can be adhered to the support substrate 80 for mounting a semiconductor element.

本實施形態的半導體裝置的製造方法視需要可進而包括：藉由打線接合線70而將半導體元件Wa與半導體元件搭載用支撐基板80電性連接的步驟；以及於半導體元件搭載用支撐基板80的表面80a上，使用樹脂密封材92對半導體元件Wa進行樹脂密封的步驟。The manufacturing method of the semiconductor device of this embodiment may further include: a step of electrically connecting the semiconductor element Wa and the support substrate 80 for mounting a semiconductor element by bonding wires 70; On the surface 80a, a step of resin sealing the semiconductor element Wa using a resin sealing material 92.

圖4是示意性表示半導體裝置的一實施形態的剖面圖。圖4所示的半導體裝置200可藉由經過所述步驟而製造。半導體裝置200亦可於半導體元件搭載用支撐基板80的與表面80a相反一側的面形成有焊球94，用於與外部基板（母板（mother board））的電性連接。4 is a cross-sectional view schematically showing an embodiment of a semiconductor device. The semiconductor device 200 shown in FIG. 4 can be manufactured by going through the above steps. In the semiconductor device 200, a solder ball 94 may be formed on the surface of the support substrate 80 for mounting a semiconductor element on the side opposite to the surface 80a for electrical connection with an external substrate (mother board).

[黏著劑的處理方法] 一實施形態的黏著劑的處理方法包括：對黏著劑實施電漿處理的步驟。黏著劑可與所述黏著片的製造方法中所例示的黏著劑相同。電漿處理可與所述黏著片的製造方法中所例示的電漿處理相同。電漿處理可為使用大氣壓電漿的電漿處理。電漿處理的處理溫度可低於黏著劑的熔點。[Processing method of adhesive] An adhesive processing method according to an embodiment includes a step of performing plasma treatment on the adhesive. The adhesive may be the same as the adhesive exemplified in the method for manufacturing the adhesive sheet. The plasma treatment may be the same as the plasma treatment exemplified in the method of manufacturing the adhesive sheet. The plasma treatment may be plasma treatment using atmospheric piezoelectric plasma. The processing temperature of plasma treatment can be lower than the melting point of the adhesive.

[被黏著體的固定方法] 一實施形態的被黏著體的固定方法包括：經由藉由所述方法進行了處理的黏著劑，將第二被黏著體貼附於第一被黏著體的步驟。作為第一被黏著體及第二被黏著體，並無特別限制，可列舉金屬被黏著體（不鏽鋼（SUS）、鋁等）、非金屬被黏著體（聚碳酸酯、玻璃等）等。被黏著體的固定條件可根據黏著劑的種類、以及第一被黏著體及第二被黏著體的種類而適當設定。[Fixing method of adherend] The method for fixing an adherend according to an embodiment includes the step of attaching the second adherend to the first adherend via the adhesive processed by the method. The first adherend and the second adherend are not particularly limited, and examples include metal adherends (stainless steel (SUS), aluminum, etc.), and non-metal adherends (polycarbonate, glass, etc.). The fixing conditions of the adherend can be appropriately set according to the type of the adhesive and the types of the first adherend and the second adherend.

[被黏著體的剝離方法] 一實施形態的被黏著體的剝離方法包括：利用水來對藉由所述方法進行了固定的被黏著體的第一被黏著體與黏著劑的界面或第二被黏著體與黏著劑的界面的至少一者進行處理（與水接觸），將第一被黏著體及第二被黏著體剝離的步驟。相較於未實施電漿處理的黏著劑，已實施電漿處理的黏著劑的親水性基多，藉由利用水來進行處理（與水接觸），而有容易剝離的傾向。再者，當剝離第一被黏著體及第二被黏著體時，黏著劑可附著於第一被黏著體或第二被黏著體的任一者上，亦可自第一被黏著體及第二被黏著體脫離。 [實施例][Removal method of adherend] An embodiment of the method for peeling off the adherend includes: using water to fix the interface between the first adherend and the adhesive or the second adherend and the adhesive that are fixed by the method At least one of the treatment (contact with water), the step of peeling the first adherend and the second adherend. Compared with adhesives that have not been plasma-treated, adhesives that have been plasma-treated have more hydrophilic groups, and treatment with water (in contact with water) tends to be easily peeled off. Furthermore, when the first adherend and the second adherend are peeled off, the adhesive may be attached to either the first adherend or the second adherend, or from the first adherend and the second adherend The second is detached from the adhesive body. [Example]

以下，基於實施例對本發明進行具體說明，但本發明並不限定於該些實施例。Hereinafter, the present invention will be specifically described based on examples, but the present invention is not limited to these examples.

（實施例1） [黏著片的製作] ＜黏著片前驅物的準備＞ 依據溶液聚合法，使作為單體的丙烯酸2-乙基己酯及甲基丙烯酸甲酯、以及作為含官能基的單體的丙烯酸羥基乙酯及丙烯酸聚合，藉此獲得具有羥基的丙烯酸系樹脂。具有羥基的丙烯酸系樹脂的重量平均分子量為40萬，玻璃轉移點為-38℃。(Example 1) [Production of adhesive sheet] <Preparation of the precursor of the adhesive sheet> According to the solution polymerization method, 2-ethylhexyl acrylate and methyl methacrylate as monomers, and hydroxyethyl acrylate and acrylic acid as functional group-containing monomers are polymerized, thereby obtaining an acrylic resin having a hydroxyl group . The acrylic resin having a hydroxyl group has a weight average molecular weight of 400,000 and a glass transition point of -38°C.

重量平均分子量是使用東曹（Tosoh）股份有限公司製造的SD-8022/DP-8020/RI-8020作為凝膠滲透層析（gel permeation chromatography，GPC）裝置，使用日立化成股份有限公司製造的凝膠組件（Gel pack）GL-A150-S/GL-A160-S作為管柱，以及使用四氫呋喃作為溶離液來測定聚苯乙烯換算的重量平均分子量（Mw）。The weight average molecular weight is SD-8022/DP-8020/RI-8020 manufactured by Tosoh Co., Ltd. as a gel permeation chromatography (GPC) device, and a gel manufactured by Hitachi Chemical Co., Ltd. is used. The gel pack (Gel pack) GL-A150-S/GL-A160-S was used as the column, and tetrahydrofuran was used as the eluent to determine the polystyrene-equivalent weight average molecular weight (Mw).

玻璃轉移點是藉由以下的關係式（FOX式）而算出。 1/Tg=Σ（Xi /Tgi ） [所述式中，Tg表示共聚物的玻璃轉移點（K）。Xi 表示各單體的質量分率，X1 +X2 +…+Xi +…+Xn =1。Tgi 表示各單體的均聚物的玻璃轉移點（K）]The glass transition point is calculated by the following relational formula (FOX formula). 1/Tg=Σ(X i /Tg i ) [In the above formula, Tg represents the glass transition point (K) of the copolymer. X i represents the mass fraction of each monomer, X 1 +X 2 +...+X i +...+X n =1. Tg i represents the glass transition point (K) of the homopolymer of each monomer]

使用三合一馬達（three-one motor）及攪拌翼，相對於具有羥基的丙烯酸系樹脂100質量份而調配12質量份的多官能異氰酸酯交聯劑（三菱化學股份有限公司製造，商品名「麥太科（MITEC）NY730A-T」），並進行攪拌，藉此獲得黏著劑層形成用清漆。Using a three-one motor and a stirring blade, 12 parts by mass of a polyfunctional isocyanate crosslinking agent (manufactured by Mitsubishi Chemical Corporation, trade name "Mai Taike (MITEC) NY730A-T") and stirring to obtain a varnish for the formation of an adhesive layer.

使用敷料器，將所得的黏著劑層形成用清漆，以黏著劑層的厚度成為10 μm的方式，一邊調整間隙一邊塗敷於基材膜A（厚度38 μm的聚對苯二甲酸乙二酯膜）上。於使所塗敷的黏著劑層形成用清漆於80℃下乾燥5分鐘後，將表面已實施電暈處理的基材膜B（厚度80 μm的聚烯烴系膜）層壓於黏著劑層上，並於室溫（25℃）下放置2週，充分地進行老化，藉此獲得具有基材膜A/黏著劑層/基材膜B的構成的黏著片前驅物。Using an applicator, apply the obtained varnish for forming an adhesive layer to the base film A (polyethylene terephthalate with a thickness of 38 μm) while adjusting the gap so that the thickness of the adhesive layer becomes 10 μm. Membrane). After the applied varnish for forming the adhesive layer was dried at 80°C for 5 minutes, the base material film B (polyolefin-based film with a thickness of 80 μm) whose surface was subjected to corona treatment was laminated on the adhesive layer , And allowed to stand at room temperature (25°C) for 2 weeks, fully aged, thereby obtaining an adhesive sheet precursor having a configuration of base film A/adhesive layer/base film B.

＜電漿處理的實施＞ 剝去黏著片前驅物的基材膜A，使用超高密度大氣壓電漿單元（富士機械製造股份有限公司製造，商品名：FPB-20 TYPE II），對黏著片前驅物中的黏著劑層的與基材膜B相反一側的面實施電漿處理，製作黏著片。其後，於已實施電漿處理的黏著劑層的面上，配置保護材（聚對苯二甲酸乙二酯（polyethylene terephthalate，PET）膜），獲得實施例1的帶保護材的黏著片。<Implementation of plasma treatment> After peeling off the base film A of the adhesive sheet precursor, an ultra-high-density atmospheric piezoelectric paste unit (manufactured by Fuji Machinery Manufacturing Co., Ltd., trade name: FPB-20 TYPE II) was used to fix the adhesive layer in the adhesive sheet precursor. The surface opposite to the base film B was subjected to plasma treatment to produce an adhesive sheet. Thereafter, a protective material (polyethylene terephthalate (PET) film) was placed on the surface of the adhesive layer that had been subjected to the plasma treatment to obtain the protective material-attached adhesive sheet of Example 1.

（電漿處理的條件） 加熱器的使用：不使用 照射速度：500 mm/秒 照射距離：5 mm 狹縫噴嘴：20 mm寬 使用氣體：氮氣及空氣 氣體流量：氮氣60 L/分鐘、空氣21 L/分鐘 重覆數：1次（照射方法：20 mm寬×8線） 樣品尺寸：150 mm×150 mm 再者，調整照射距離、照射速度、加熱器設定等，且以處理溫度為100℃以下的方式進行設定，以使在進行處理的時間內黏著片前驅物100（基材10及黏著劑層20）不產生褶皺、撓曲等。(Conditions for plasma treatment) Use of heater: not used Irradiation speed: 500 mm/s Irradiation distance: 5 mm Slot nozzle: 20 mm wide Use gas: nitrogen and air Gas flow rate: nitrogen 60 L/min, air 21 L/min Number of repetitions: 1 (irradiation method: 20 mm width × 8 lines) Sample size: 150 mm×150 mm Furthermore, the irradiation distance, the irradiation speed, the heater setting, etc. are adjusted, and the processing temperature is set to 100° C. or less so that the sheet precursor 100 (the base material 10 and the adhesive layer 20) is adhered during the processing time ) No wrinkles, deflection, etc.

（實施例2） 對保護材的黏著劑層側的面，實施與對黏著劑層所實施的電漿處理相同的電漿處理（重覆數：1次），除此以外，以與實施例1相同的方式進行，獲得實施例2的帶保護材的黏著片。(Example 2) The surface of the protective material on the adhesive layer side was subjected to the same plasma treatment as the plasma treatment performed on the adhesive layer (number of repetitions: 1 time), except that it was performed in the same manner as in Example 1. To obtain the adhesive sheet with protective material of Example 2.

（實施例3） 將保護材的電漿處理的重覆數自1次變更為4次，除此以外，以與實施例2相同的方式進行，獲得實施例3的帶保護材的黏著片。(Example 3) Except that the number of repetitions of the plasma treatment of the protective material was changed from one to four times, it was performed in the same manner as in Example 2 to obtain an adhesive sheet with protective material of Example 3.

（實施例4） 將黏著劑層的電漿處理的重覆數自1次變更為4次，除此以外，以與實施例1相同的方式進行，獲得實施例2的帶保護材的黏著片。(Example 4) Except that the number of repetitions of the plasma treatment of the adhesive layer was changed from once to four times, it was carried out in the same manner as in Example 1 to obtain an adhesive sheet with protective material of Example 2.

（實施例5） 對保護材的黏著劑層側的面，實施與對黏著劑層所實施的電漿處理相同的電漿處理（重覆數：1次），除此以外，以與實施例4相同的方式進行，獲得實施例5的帶保護材的黏著片。(Example 5) The surface of the protective material on the side of the adhesive layer was subjected to the same plasma treatment as the plasma treatment applied to the adhesive layer (number of repetitions: 1 time), except that it was performed in the same manner as in Example 4. To obtain the adhesive sheet with protective material of Example 5.

（實施例6） 將保護材的電漿處理的重覆數自1次變更為4次，除此以外，以與實施例5相同的方式進行，獲得實施例6的帶保護材的黏著片。(Example 6) Except that the number of repetitions of the plasma treatment of the protective material was changed from one to four, it was carried out in the same manner as in Example 5 to obtain an adhesive sheet with protective material of Example 6.

（比較例1） 未對黏著劑層實施電漿處理，除此以外，以與實施例1相同的方式進行，獲得比較例1的帶保護材的黏著片。(Comparative example 1) Except that the adhesive layer was not subjected to plasma treatment, it was carried out in the same manner as in Example 1 to obtain a protective material-attached adhesive sheet of Comparative Example 1.

[評價] ＜水對黏著劑層的已實施電漿處理的面的接觸角的測定＞ 對於實施例1～實施例6及比較例1的帶保護材的黏著片，測定水對已實施電漿處理的面的接觸角。測定中，使用接觸角計（協和界面化學股份有限公司製造，商品名：卓普馬斯特（Drop Master）300）。藉由以下方式進行測定：將帶保護材的黏著片的保護材剝離，於黏著劑層的已實施電漿處理的面滴加水作為探針液體。測定條件是將溫度設為23℃～28℃，將探針液體的液滴量設為1.5 μL，將測定時機設為探針的液滴下後5秒。將測定的試行數設為10次，求出所得的數值的中位數作為接觸角θ。將結果示於表1中。[Evaluation] <Measurement of the contact angle of water to the plasma-treated surface of the adhesive layer> For the adhesive sheets with protective materials of Examples 1 to 6 and Comparative Example 1, the contact angle of water to the plasma-treated surface was measured. For the measurement, a contact angle meter (produced by Kyowa Interface Chemical Co., Ltd., trade name: Drop Master 300) was used. The measurement was carried out by peeling off the protective material of the adhesive sheet with a protective material, and adding water as a probe liquid to the plasma-treated surface of the adhesive layer. The measurement conditions are such that the temperature is 23°C to 28°C, the droplet amount of the probe liquid is 1.5 μL, and the measurement timing is 5 seconds after the droplet of the probe is dropped. The number of trials to be measured was set to 10 times, and the median of the obtained values was determined as the contact angle θ. The results are shown in Table 1.

[表1]

Figure 108119835-A0304-0001
[Table 1]
Figure 108119835-A0304-0001

＜黏著劑層對SUS基板的剝離強度的測定＞ 將實施例1、實施例2及比較例1的帶保護材的黏著片切成寬度10 mm、長度70 mm以上，且將保護材自帶保護材的黏著片剝離後貼附於SUS板（SUS430BA），將其作為初期的測定樣品。貼附於SUS板時，利用3 kg的錘輥在樣品上往返3次。將剝離引導帶（王子塔克（OJITAC）公司製造，EC帶）切成寬度10 mm，於樣品的前端黏貼10 mm左右，固定於荷重元（load cell）的前端。以剝離的進展與帶寬度平行的方式對荷重元的位置進行微調。另外，將初期的測定樣品冷藏（5℃）保管3個月，將其作為經過3個月的測定樣品。對於該些測定樣品，以剝離角度30度、剝離速度50 mm/分鐘進行SUS基板與黏著劑層的剝離，求出剝離強度。另外，SUS基板是在使用前利用丙酮清洗後使用。將結果示於表2中。另外，表2中的數值是將比較例1的剝離強度的數值作為基準的相對值。<Measurement of peel strength of adhesive layer to SUS substrate> The adhesive sheets with protective material of Example 1, Example 2 and Comparative Example 1 were cut into a width of 10 mm and a length of 70 mm or more, and the protective material was peeled from the adhesive sheet with protective material and attached to a SUS board (SUS430BA ), which is used as the initial measurement sample. When attaching to a SUS plate, use a 3 kg hammer roller to reciprocate three times on the sample. The peeling guide tape (manufactured by OJITAC, EC tape) was cut into a width of 10 mm, and the front end of the sample was pasted by about 10 mm and fixed to the front end of the load cell. Fine-adjust the position of the load cell in such a way that the progress of the stripping is parallel to the width of the tape. In addition, the initial measurement sample was stored in a refrigerator (5°C) for 3 months, and this was used as the measurement sample after 3 months. For these measurement samples, the SUS substrate and the adhesive layer were peeled off at a peeling angle of 30 degrees and a peeling speed of 50 mm/minute, and the peeling strength was determined. In addition, the SUS substrate is washed with acetone before use. The results are shown in Table 2. In addition, the numerical value in Table 2 is a relative value based on the numerical value of the peeling strength of the comparative example 1 as a reference.

[表2]

Figure 108119835-A0304-0002
[Table 2]
Figure 108119835-A0304-0002

可推測，於使用例如以其他丙烯酸系樹脂、合成橡膠、天然橡膠、聚醯亞胺樹脂等為基體樹脂者來代替實施例1～實施例6的帶保護材的黏著片中的黏著劑層的情況下，亦可獲得同樣的效果。It can be presumed that, for example, those using other acrylic resins, synthetic rubbers, natural rubbers, polyimide resins, etc. as the matrix resin instead of the adhesive layer in the adhesive sheet with protective material of Examples 1 to 6 In this case, the same effect can be obtained.

與比較例1的帶保護材的黏著片相比，實施例1～實施例6的帶保護材的黏著片中，黏著劑層的已實施電漿處理的面的接觸角降低，黏著劑層的潤濕性提高。另外，與比較例1的帶保護材的黏著片相比，實施例1、實施例2的帶保護材的黏著片的剝離強度提高，黏著力提高。另外，由實施例1與實施例2的對比而判明，藉由亦對保護材實施電漿處理，可長期維持實施了電漿處理的效果。由該些結果可確認到，本發明的製造方法能夠製造黏著力優異的黏著片。Compared with the protective material-attached adhesive sheet of Comparative Example 1, in the protective material-attached adhesive sheets of Examples 1 to 6, the contact angle of the plasma-treated surface of the adhesive layer was reduced, and the adhesive layer Increased wettability. Moreover, compared with the adhesive sheet with a protective material of Comparative Example 1, the peeling strength of the adhesive sheet with a protective material of Example 1 and Example 2 was improved, and the adhesive force was improved. In addition, it was found from the comparison between Example 1 and Example 2 that by also performing plasma treatment on the protective material, the effect of performing plasma treatment can be maintained for a long period of time. From these results, it was confirmed that the production method of the present invention can produce an adhesive sheet excellent in adhesion.

10‧‧‧基材 20、20Aa‧‧‧黏著劑層 20A‧‧‧電漿處理後的黏著劑層 30、50‧‧‧保護材 40、40a‧‧‧接著劑層 60‧‧‧帶接著劑層的半導體元件 70‧‧‧打線接合線 72‧‧‧頂針 74‧‧‧抽吸夾頭 80‧‧‧半導體元件搭載用支撐基板 80a‧‧‧表面 92‧‧‧樹脂密封材 94‧‧‧焊球 100‧‧‧黏著片前驅物 110‧‧‧黏著片 120‧‧‧帶保護材的黏著片 130‧‧‧切晶-黏晶一體型帶 140‧‧‧帶保護材的切晶-黏晶一體型帶 200‧‧‧半導體裝置 A‧‧‧電漿處理 W‧‧‧半導體晶圓 Wa‧‧‧半導體元件 Ws‧‧‧主面10‧‧‧ Base material 20、20Aa‧‧‧Adhesive layer 20A‧‧‧Adhesive layer after plasma treatment 30, 50‧‧‧protection materials 40、40a‧‧‧adhesive layer 60‧‧‧Semiconductor element with adhesive layer 70‧‧‧Wire bonding wire 72‧‧‧Thimble 74‧‧‧Suction Chuck 80‧‧‧Support substrate for mounting semiconductor elements 80a‧‧‧surface 92‧‧‧Resin sealant 94‧‧‧solder ball 100‧‧‧adhesive precursor 110‧‧‧ Adhesive sheet 120‧‧‧ Adhesive sheet with protective material 130‧‧‧Crystal-bonded crystal integrated belt 140‧‧‧Integrated die-bonded crystal with protective material 200‧‧‧Semiconductor device A‧‧‧Plasma treatment W‧‧‧Semiconductor wafer Wa‧‧‧Semiconductor components Ws‧‧‧Main

圖1（a）～圖1（d）是示意性表示黏著片的製造方法的一實施形態的剖面圖。圖1（a）、圖1（b）、圖1（c）及圖1（d）是示意性表示各步驟的剖面圖。 圖2（a）～圖2（c）是示意性地表示切晶-黏晶一體型帶的製造方法的一實施形態的剖面圖。圖2（a）、圖2（b）及圖2（c）是示意性表示各步驟的剖面圖。 圖3（a）～圖3（f）是示意性表示半導體裝置的製造方法的一實施形態的剖面圖。圖3（a）、圖3（b）、圖3（c）、圖3（d）、圖3（e）及圖3（f）是示意性表示各步驟的剖面圖。 圖4是示意性表示半導體裝置的一實施形態的剖面圖。1(a) to 1(d) are cross-sectional views schematically showing an embodiment of a method for manufacturing an adhesive sheet. 1(a), 1(b), 1(c), and 1(d) are cross-sectional views schematically showing each step. FIGS. 2( a) to 2 (c) are cross-sectional views schematically showing an embodiment of a method for manufacturing a die-bonded integrated tape. 2(a), 2(b), and 2(c) are cross-sectional views schematically showing each step. 3(a) to 3(f) are cross-sectional views schematically showing an embodiment of a method of manufacturing a semiconductor device. 3(a), 3(b), 3(c), 3(d), 3(e), and 3(f) are cross-sectional views schematically showing each step. 4 is a cross-sectional view schematically showing an embodiment of a semiconductor device.

10‧‧‧基材 10‧‧‧ Base material

20‧‧‧黏著劑層 20‧‧‧Adhesive layer

20A‧‧‧電漿處理後的黏著劑層 20A‧‧‧Adhesive layer after plasma treatment

30‧‧‧保護材 30‧‧‧Protection materials

100‧‧‧黏著片前驅物 100‧‧‧adhesive precursor

110‧‧‧黏著片 110‧‧‧ Adhesive sheet

120‧‧‧帶保護材的黏著片 120‧‧‧ Adhesive sheet with protective material

A‧‧‧電漿處理 A‧‧‧Plasma treatment

Claims (12)

一種黏著片的製造方法，包括： 準備黏著片前驅物的步驟，所述黏著片前驅物具有基材、及設置於所述基材上的黏著劑層；以及 對所述黏著片前驅物中之所述黏著劑層的與所述基材相反側的面實施電漿處理的步驟。A method for manufacturing an adhesive sheet includes: A step of preparing an adhesive sheet precursor, the adhesive sheet precursor having a substrate and an adhesive layer provided on the substrate; and A step of plasma processing is performed on a surface of the adhesive layer precursor on the side opposite to the substrate. 如申請專利範圍第1項所述的黏著片的製造方法，其中所述電漿處理為使用大氣壓電漿的電漿處理。The method for manufacturing an adhesive sheet as described in item 1 of the patent application range, wherein the plasma treatment is a plasma treatment using atmospheric piezoelectric plasma. 如申請專利範圍第1項或第2項所述的黏著片的製造方法，其中所述電漿處理的處理溫度小於所述基材的熔點或所述黏著劑層的熔點中任一較低者的溫度。The method for manufacturing an adhesive sheet according to item 1 or 2 of the patent application scope, wherein the plasma treatment temperature is lower than the melting point of the base material or the melting point of the adhesive layer, whichever is lower temperature. 如申請專利範圍第1項至第3項中任一項所述的黏著片的製造方法，進而包括於已實施電漿處理的所述黏著劑層的與所述基材相反側的面上貼附保護材的步驟。The method for manufacturing an adhesive sheet as described in any one of claims 1 to 3, further comprising pasting the surface of the adhesive layer that has undergone plasma treatment on the side opposite to the substrate Steps with protective material. 如申請專利範圍第4項所述的黏著片的製造方法，其中所述保護材的貼附於已實施電漿處理的所述黏著劑層的一側的面藉由電漿處理進行了處理。The method for manufacturing an adhesive sheet according to item 4 of the patent application scope, wherein the surface of the protective material attached to the side of the adhesive layer that has been subjected to plasma treatment is treated by plasma treatment. 一種切晶-黏晶一體型帶的製造方法，包括：對於藉由如申請專利範圍第1項至第3項中任一項所述的黏著片的製造方法而獲得的黏著片，於已實施電漿處理的所述黏著劑層的與所述基材相反側的面上形成接著劑層的步驟。A method for manufacturing a die-cut crystal-bonded integrated belt, including: the adhesive sheet obtained by the adhesive sheet manufacturing method as described in any one of claims 1 to 3 The step of forming an adhesive layer on the surface of the adhesive layer on the side opposite to the substrate by plasma treatment. 一種半導體裝置的製造方法，包括：將藉由如申請專利範圍第6項所述的切晶-黏晶一體型帶的製造方法而獲得的切晶-黏晶一體型帶的所述接著劑層貼附於半導體晶圓的步驟； 將所述半導體晶圓、所述接著劑層及已實施電漿處理的所述黏著劑層進行單片化的步驟； 從已實施電漿處理的所述黏著劑層拾取附著有所述接著劑層的半導體元件的步驟；以及 經由所述接著劑層，將所述半導體元件接著於半導體元件搭載用支撐基板的步驟。A method for manufacturing a semiconductor device, comprising: applying the adhesive layer of the slicing-bonding integrated tape obtained by the method for manufacturing a slicing-bonding integrated tape as described in item 6 of the patent scope Steps for attaching to semiconductor wafers; A step of singulation of the semiconductor wafer, the adhesive layer and the adhesive layer that has been subjected to plasma treatment; The step of picking up the semiconductor element attached with the adhesive layer from the adhesive layer that has been subjected to the plasma treatment; and The step of adhering the semiconductor element to the support substrate for mounting a semiconductor element via the adhesive layer. 一種黏著劑的處理方法，包括：對黏著劑實施電漿處理的步驟。An adhesive processing method includes the steps of performing plasma treatment on the adhesive. 如申請專利範圍第8項所述的黏著劑的處理方法，其中所述電漿處理為使用大氣壓電漿的電漿處理。The method for processing an adhesive as described in item 8 of the patent application range, wherein the plasma processing is a plasma processing using atmospheric piezoelectric plasma. 如申請專利範圍第8項或第9項所述的黏著劑的處理方法，其中所述電漿處理的處理溫度小於所述黏著劑的熔點。The method for processing an adhesive according to item 8 or 9 of the patent application scope, wherein the processing temperature of the plasma treatment is less than the melting point of the adhesive. 一種被黏著體的固定方法，包括：將第二被黏著體藉由黏著劑貼附於第一被黏著體的步驟，所述黏著劑經由如申請專利範圍第8項至第10項中任一項所述的方法進行了處理。A method for fixing an adherend includes: a step of attaching a second adherend to the first adherend by an adhesive, the adhesive being passed through any of items 8 to 10 of the patent application The method described in the item was processed. 一種被黏著體的剝離方法，包括：利用水對藉由如申請專利範圍第11項所述的方法進行了固定的所述被黏著體的所述第一被黏著體與所述黏著劑的界面、或所述第二被黏著體與所述黏著劑的界面的至少一者進行處理，將所述第一被黏著體及所述第二被黏著體剝離的步驟。A method for peeling an adherend, comprising: using water to fix the interface between the first adherend and the adhesive of the adherend fixed by the method as described in item 11 of the patent application Or a step of peeling off the first adherend and the second adherend by processing at least one of the interface between the second adherend and the adhesive.
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