JP7274496B2 - ネガ作動型超厚膜フォトレジスト - Google Patents

ネガ作動型超厚膜フォトレジスト Download PDF

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Publication number
JP7274496B2
JP7274496B2 JP2020550871A JP2020550871A JP7274496B2 JP 7274496 B2 JP7274496 B2 JP 7274496B2 JP 2020550871 A JP2020550871 A JP 2020550871A JP 2020550871 A JP2020550871 A JP 2020550871A JP 7274496 B2 JP7274496 B2 JP 7274496B2
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JP2021518584A (ja
JP2021518584A5 (enExample
Inventor
有高 菱田
央志 本林
ルー・レイ
チェン・チュンウェイ
ルー・ピンフン
リュウ・ウェイホン
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Merck Patent GmbH
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Merck Patent GmbH
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0384—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the main chain of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
    • C08F216/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an alcohol radical
    • C08F216/04—Acyclic compounds
    • C08F216/06—Polyvinyl alcohol ; Vinyl alcohol
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/281—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing only one oxygen, e.g. furfuryl (meth)acrylate or 2-methoxyethyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/282—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing two or more oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
    • C08F220/301—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety and one oxygen in the alcohol moiety
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Polymerisation Methods In General (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Graft Or Block Polymers (AREA)
  • Optical Filters (AREA)
JP2020550871A 2018-03-23 2019-03-20 ネガ作動型超厚膜フォトレジスト Active JP7274496B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862646946P 2018-03-23 2018-03-23
US62/646,946 2018-03-23
PCT/EP2019/056911 WO2019180058A1 (en) 2018-03-23 2019-03-20 Negative-working ultra thick film photoresist

Publications (3)

Publication Number Publication Date
JP2021518584A JP2021518584A (ja) 2021-08-02
JP2021518584A5 JP2021518584A5 (enExample) 2022-03-14
JP7274496B2 true JP7274496B2 (ja) 2023-05-16

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JP2020550871A Active JP7274496B2 (ja) 2018-03-23 2019-03-20 ネガ作動型超厚膜フォトレジスト

Country Status (9)

Country Link
US (1) US11698586B2 (enExample)
EP (1) EP3769156B1 (enExample)
JP (1) JP7274496B2 (enExample)
KR (1) KR102660770B1 (enExample)
CN (1) CN111837075B (enExample)
PT (1) PT3769156T (enExample)
SG (1) SG11202007193SA (enExample)
TW (1) TWI818965B (enExample)
WO (1) WO2019180058A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PT3769156T (pt) 2018-03-23 2024-06-25 Merck Patent Gmbh Fotorresistente de película ultraespessa de trabalho negativo
EP4433873A2 (en) 2021-11-17 2024-09-25 Merck Patent GmbH Compositions and methods for improving metal structure fabrication by wet chemical etch
CN122459748A (zh) * 2023-12-28 2026-07-24 默克专利有限公司 抗蚀剂组合物以及使用该组合物制造抗蚀剂膜的方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008309878A (ja) 2007-06-12 2008-12-25 Fujifilm Corp パターン形成方法
JP2009003366A (ja) 2007-06-25 2009-01-08 Jsr Corp マイクロレンズ形成に用いられる感放射線性樹脂組成物
JP2013097260A (ja) 2011-11-02 2013-05-20 Asahi Kasei E-Materials Corp 感光性樹脂組成物
JP2015521752A (ja) 2012-06-15 2015-07-30 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ ネガ型厚膜フォトレジスト
US20160139507A1 (en) 2014-11-17 2016-05-19 Samsung Sdi Co., Ltd. Photosensitive Resin Composition, Photosensitive Resin Film Using the Same and Color Filter
JP2018151489A (ja) 2017-03-10 2018-09-27 東京応化工業株式会社 感光性組成物、ドライフィルム、及びパターン化された硬化膜を形成する方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH064689B2 (ja) 1983-11-01 1994-01-19 日立化成工業株式会社 重合体
JPH0615579B2 (ja) 1984-09-20 1994-03-02 日立化成工業株式会社 重合体からなる光学機器
US4591626A (en) * 1983-10-24 1986-05-27 Hitachi Chemical Company, Ltd. Polymers of tricyclo[5.2.1.02,6 ]deca-8-yl (meth)acrylate
JPS6090204A (ja) 1983-10-24 1985-05-21 Hitachi Chem Co Ltd 重合体の製造法
DE3751745T2 (de) 1986-10-23 1996-09-26 Ibm Hochempfindliche Resiste mit Selbstzersetzungstemperatur grösser als etwa 160 Grad Celsius
US5456996A (en) * 1988-07-07 1995-10-10 Sumitomo Chemical Company, Limited Radiation-sensitive positive resist composition
DE68928823T2 (de) 1988-07-07 1999-02-25 Sumitomo Chemical Co., Ltd., Osaka Strahlungsempfindliche, positiv arbeitende Resistzusammensetzung
JP2719799B2 (ja) * 1988-10-14 1998-02-25 日本合成化学工業株式会社 感光性樹脂組成物
JP2711590B2 (ja) * 1990-09-13 1998-02-10 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
KR100256392B1 (ko) 1996-09-30 2000-05-15 겐지 아이다 칼라필터용 감광성 수지 착색 조성물 및 이로부터 형성된 칼라필터 및 그 제조방법
US6296984B1 (en) 1999-03-12 2001-10-02 Agere Systems Guardian Corp. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
JP4384570B2 (ja) 2003-12-01 2009-12-16 東京応化工業株式会社 厚膜用ホトレジスト組成物及びレジストパターンの形成方法
JP4376706B2 (ja) * 2004-06-30 2009-12-02 東京応化工業株式会社 ネガ型ホトレジスト組成物を用いたメッキ形成物の形成方法
US8617794B2 (en) * 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
KR101430533B1 (ko) * 2008-01-04 2014-08-22 솔브레인 주식회사 네거티브 포토레지스트 조성물 및 이를 이용한 어레이기판의 제조 방법
JP4964862B2 (ja) 2008-12-18 2012-07-04 凸版印刷株式会社 感光性樹脂組成物及びこの感光性樹脂組成物を用いたカラーフィルタ
JP2010286796A (ja) 2009-06-15 2010-12-24 Asahi Kasei E-Materials Corp 感光性樹脂組成物
SG188386A1 (en) * 2010-09-02 2013-04-30 Toray Industries Photosensitive composition, cured film formed from same, and element having cured film
MX346055B (es) 2012-05-15 2017-03-06 Geigtech East Bay Llc Montaje para instalar cortinas.
JP6013150B2 (ja) * 2012-11-22 2016-10-25 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 ポジ型感光性シロキサン組成物の製造方法
CN104981737A (zh) 2013-02-12 2015-10-14 东丽株式会社 感光性树脂组合物、使其热固化而成的保护膜或绝缘膜、使用其的触摸面板及其制造方法
US9690197B2 (en) 2013-07-25 2017-06-27 Toray Industries, Inc. Negative-type photosensitive white composition for touch panel, touch panel and touch panel production method
TWI483075B (zh) 2013-08-08 2015-05-01 Chi Mei Corp 負型感光性樹脂組成物及其應用
KR102468581B1 (ko) * 2013-10-21 2022-11-18 닛산 가가쿠 가부시키가이샤 네가티브형 감광성 수지 조성물
KR20150112560A (ko) 2014-03-28 2015-10-07 동우 화인켐 주식회사 패시베이션층의 표면개질용 수지 조성물 및 그를 사용하여 제조된 이미지센서
JP2015193758A (ja) 2014-03-31 2015-11-05 東洋インキＳｃホールディングス株式会社 オーバーコート用感光性樹脂組成物、ならびにそれを用いた塗膜
JP6711273B2 (ja) 2014-11-27 2020-06-17 東レ株式会社 樹脂および感光性樹脂組成物
JP6518436B2 (ja) 2014-12-19 2019-05-22 東友ファインケム株式会社Ｄｏｎｇｗｏｏ Ｆｉｎｅ−Ｃｈｅｍ Ｃｏ．， Ｌｔｄ． 着色硬化性樹脂組成物
KR20160091646A (ko) 2015-01-26 2016-08-03 동우 화인켐 주식회사 감광성 수지 조성물, 이로부터 형성된 광경화 패턴 및 이를 포함하는 화상 표시 장치
KR20160118865A (ko) 2015-04-03 2016-10-12 삼성에스디아이 주식회사 감광성 수지 조성물 및 이를 이용한 컬러필터
US20180259850A1 (en) * 2017-03-10 2018-09-13 Tokyo Ohka Kogyo Co., Ltd. Method for forming patterned cured film, photosensitive composition, dry film, and method for producing plated shaped article
PT3769156T (pt) 2018-03-23 2024-06-25 Merck Patent Gmbh Fotorresistente de película ultraespessa de trabalho negativo

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008309878A (ja) 2007-06-12 2008-12-25 Fujifilm Corp パターン形成方法
JP2009003366A (ja) 2007-06-25 2009-01-08 Jsr Corp マイクロレンズ形成に用いられる感放射線性樹脂組成物
JP2013097260A (ja) 2011-11-02 2013-05-20 Asahi Kasei E-Materials Corp 感光性樹脂組成物
JP2015521752A (ja) 2012-06-15 2015-07-30 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ ネガ型厚膜フォトレジスト
US20160139507A1 (en) 2014-11-17 2016-05-19 Samsung Sdi Co., Ltd. Photosensitive Resin Composition, Photosensitive Resin Film Using the Same and Color Filter
JP2018151489A (ja) 2017-03-10 2018-09-27 東京応化工業株式会社 感光性組成物、ドライフィルム、及びパターン化された硬化膜を形成する方法

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Publication number Publication date
US20200393758A1 (en) 2020-12-17
TW201940978A (zh) 2019-10-16
TWI818965B (zh) 2023-10-21
WO2019180058A1 (en) 2019-09-26
JP2021518584A (ja) 2021-08-02
KR102660770B1 (ko) 2024-04-24
EP3769156B1 (en) 2024-03-20
SG11202007193SA (en) 2020-08-28
KR20200136009A (ko) 2020-12-04
CN111837075A (zh) 2020-10-27
US11698586B2 (en) 2023-07-11
CN111837075B (zh) 2024-07-05
EP3769156A1 (en) 2021-01-27
PT3769156T (pt) 2024-06-25

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