JP7263091B2 - 構造体の製造方法 - Google Patents
構造体の製造方法 Download PDFInfo
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- JP7263091B2 JP7263091B2 JP2019078793A JP2019078793A JP7263091B2 JP 7263091 B2 JP7263091 B2 JP 7263091B2 JP 2019078793 A JP2019078793 A JP 2019078793A JP 2019078793 A JP2019078793 A JP 2019078793A JP 7263091 B2 JP7263091 B2 JP 7263091B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 26
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- 239000011347 resin Substances 0.000 claims description 105
- 229920005989 resin Polymers 0.000 claims description 105
- 238000000034 method Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 claims description 6
- 239000002390 adhesive tape Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
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- 238000010438 heat treatment Methods 0.000 description 10
- 239000007788 liquid Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
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- 238000009826 distribution Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
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- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
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- 238000005488 sandblasting Methods 0.000 description 2
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- 238000001039 wet etching Methods 0.000 description 2
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
- B41J2/1603—Production of bubble jet print heads of the front shooter type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76817—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics using printing or stamping techniques
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1623—Manufacturing processes bonding and adhesion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
- B41J2/1634—Manufacturing processes machining laser machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1637—Manufacturing processes molding
- B41J2/1639—Manufacturing processes molding sacrificial molding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Micromachines (AREA)
- Laminated Bodies (AREA)
Description
3 貫通孔
4 樹脂層
9 ドライフィルム
20 支持基板
30 支持部材
Claims (13)
- 貫通孔が形成された基板と、前記貫通孔を塞ぐように前記基板の表面上に設けられた樹脂層と、を有する構造体の製造方法であって、
貫通孔を有し、前記貫通孔を塞ぐように裏面上に支持基板が設けられた基板を用意する工程と、
支持部材と前記支持部材上に樹脂層が形成されたドライフィルムを、前記樹脂層が前記貫通孔を塞ぐように前記基板の表面上に貼り付け、前記基板と前記支持基板と前記ドライフィルムによって前記貫通孔を閉空間とする工程と、
前記支持基板の側から前記閉空間となった貫通孔を開放する工程と、
前記ドライフィルムから前記支持部材を分離し、前記基板の表面上に前記樹脂層を残す工程と、をこの順番で有することを特徴とする構造体の製造方法。 - 前記支持基板は自己粘着材料または粘着テープで形成されている請求項1に記載の構造体の製造方法。
- 前記支持基板は静電式の溶着によって前記基板に貼り合わされている請求項1に記載の構造体の製造方法。
- 前記支持部材の軟化点は前記樹脂層の軟化点よりも高い請求項1乃至3のいずれか1項に記載の構造体の製造方法。
- 前記樹脂層は感光性樹脂で形成されている請求項1乃至4のいずれか1項に記載の構造体の製造方法。
- 前記ドライフィルムは、前記基板の表面に減圧下で貼り付けられる請求項1乃至5のいずれか1項に記載の構造体の製造方法。
- 前記ドライフィルムよりも前記支持基板が変形しやすい請求項1乃至6のいずれか1項に記載の構造体の製造方法。
- 前記支持基板の側から前記閉空間となった貫通孔を開放する工程は、前記基板に対して前記支持基板を除去することで行う請求項1乃至7のいずれか1項に記載の構造体の製造方法。
- 前記支持基板の側から前記閉空間となった貫通孔を開放する工程は、前記支持基板を貫通させて一部を除去することで行う請求項1乃至7のいずれか1項に記載の構造体の製造方法。
- 前記ドライフィルムを前記基板の表面上に貼り付けることで、前記樹脂層の一部を前記貫通孔に入り込ませる請求項1乃至9のいずれか1項に記載の構造体の製造方法。
- 前記貫通孔が前記基板の表面から裏面に向けて、前記基板の表面と平行方向の断面積が変化する形状である請求項1乃至10のいずれか1項に記載の構造体の製造方法。
- 前記樹脂層が2層の樹脂層を有する請求項1乃至11のいずれか1項に記載の構造体の製造方法。
- 前記2層の樹脂層は感光性樹脂で形成された樹脂層と、非感光性樹脂で形成された樹脂層である請求項12に記載の構造体の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019078793A JP7263091B2 (ja) | 2019-04-17 | 2019-04-17 | 構造体の製造方法 |
US16/845,662 US11424157B2 (en) | 2019-04-17 | 2020-04-10 | Method of manufacturing structure |
Applications Claiming Priority (1)
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JP2019078793A JP7263091B2 (ja) | 2019-04-17 | 2019-04-17 | 構造体の製造方法 |
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JP2020175569A JP2020175569A (ja) | 2020-10-29 |
JP7263091B2 true JP7263091B2 (ja) | 2023-04-24 |
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JP2019078793A Active JP7263091B2 (ja) | 2019-04-17 | 2019-04-17 | 構造体の製造方法 |
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JP (1) | JP7263091B2 (ja) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003200579A (ja) | 2001-12-20 | 2003-07-15 | Samsung Electronics Co Ltd | インクジェットプリンタのヘッド及びその製造方法 |
JP2007166873A (ja) | 2005-12-16 | 2007-06-28 | Seiko Epson Corp | 電極基板の製造方法、静電アクチュエータの製造方法及び液滴吐出ヘッドの製造方法並びに液滴吐出装置の製造方法 |
US20100128091A1 (en) | 2008-11-27 | 2010-05-27 | Samsung Electronics Co., Ltd. | Inkjet printhead and method of manufacturing the same |
JP2012210757A (ja) | 2011-03-31 | 2012-11-01 | Brother Industries Ltd | インク吐出ヘッド及びインク吐出ヘッドの製造方法 |
JP2013212681A (ja) | 2011-12-02 | 2013-10-17 | Canon Inc | 液体吐出ヘッド用基板の製造方法 |
JP2015104876A (ja) | 2013-11-29 | 2015-06-08 | キヤノン株式会社 | 液体吐出ヘッドの製造方法 |
JP2015134423A (ja) | 2014-01-16 | 2015-07-27 | キヤノン株式会社 | 構造物の製造方法及び液体吐出ヘッドの製造方法 |
JP2019142153A (ja) | 2018-02-22 | 2019-08-29 | キヤノン株式会社 | 樹脂膜の貼着方法及び液体吐出ヘッドの製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100396559B1 (ko) | 2001-11-05 | 2003-09-02 | 삼성전자주식회사 | 일체형 잉크젯 프린트헤드의 제조 방법 |
JP6772042B2 (ja) * | 2016-11-25 | 2020-10-21 | キヤノン株式会社 | 貫通基板の製造方法 |
JP7009225B2 (ja) * | 2018-01-16 | 2022-01-25 | キヤノン株式会社 | 構造体の製造方法、液体吐出ヘッドの製造方法、保護部材、保護基板及び保護基板の製造方法 |
JP7171372B2 (ja) * | 2018-11-02 | 2022-11-15 | キヤノン株式会社 | 液体吐出ヘッドの製造方法およびレジストの形成方法 |
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2019
- 2019-04-17 JP JP2019078793A patent/JP7263091B2/ja active Active
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2020
- 2020-04-10 US US16/845,662 patent/US11424157B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003200579A (ja) | 2001-12-20 | 2003-07-15 | Samsung Electronics Co Ltd | インクジェットプリンタのヘッド及びその製造方法 |
JP2007166873A (ja) | 2005-12-16 | 2007-06-28 | Seiko Epson Corp | 電極基板の製造方法、静電アクチュエータの製造方法及び液滴吐出ヘッドの製造方法並びに液滴吐出装置の製造方法 |
US20100128091A1 (en) | 2008-11-27 | 2010-05-27 | Samsung Electronics Co., Ltd. | Inkjet printhead and method of manufacturing the same |
JP2012210757A (ja) | 2011-03-31 | 2012-11-01 | Brother Industries Ltd | インク吐出ヘッド及びインク吐出ヘッドの製造方法 |
JP2013212681A (ja) | 2011-12-02 | 2013-10-17 | Canon Inc | 液体吐出ヘッド用基板の製造方法 |
JP2015104876A (ja) | 2013-11-29 | 2015-06-08 | キヤノン株式会社 | 液体吐出ヘッドの製造方法 |
JP2015134423A (ja) | 2014-01-16 | 2015-07-27 | キヤノン株式会社 | 構造物の製造方法及び液体吐出ヘッドの製造方法 |
JP2019142153A (ja) | 2018-02-22 | 2019-08-29 | キヤノン株式会社 | 樹脂膜の貼着方法及び液体吐出ヘッドの製造方法 |
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Publication number | Publication date |
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US11424157B2 (en) | 2022-08-23 |
US20200335391A1 (en) | 2020-10-22 |
JP2020175569A (ja) | 2020-10-29 |
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