JP7262672B2 - 半導体装置および電力変換装置 - Google Patents

半導体装置および電力変換装置 Download PDF

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Publication number
JP7262672B2
JP7262672B2 JP2022528430A JP2022528430A JP7262672B2 JP 7262672 B2 JP7262672 B2 JP 7262672B2 JP 2022528430 A JP2022528430 A JP 2022528430A JP 2022528430 A JP2022528430 A JP 2022528430A JP 7262672 B2 JP7262672 B2 JP 7262672B2
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gate
insulating film
well region
semiconductor device
region
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Japanese (ja)
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JPWO2021245992A5 (https=
JPWO2021245992A1 (https=
Inventor
洪平 海老原
史郎 日野
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01366—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the semiconductor being silicon carbide

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  • Electrodes Of Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
JP2022528430A 2020-06-04 2021-02-17 半導体装置および電力変換装置 Active JP7262672B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020097541 2020-06-04
JP2020097541 2020-06-04
PCT/JP2021/005821 WO2021245992A1 (ja) 2020-06-04 2021-02-17 半導体装置および電力変換装置

Publications (3)

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JPWO2021245992A1 JPWO2021245992A1 (https=) 2021-12-09
JPWO2021245992A5 JPWO2021245992A5 (https=) 2022-07-27
JP7262672B2 true JP7262672B2 (ja) 2023-04-21

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JP2022528430A Active JP7262672B2 (ja) 2020-06-04 2021-02-17 半導体装置および電力変換装置

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US (1) US12363943B2 (https=)
JP (1) JP7262672B2 (https=)
CN (1) CN115699329B (https=)
DE (1) DE112021003165T5 (https=)
WO (1) WO2021245992A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024016733A (ja) * 2022-07-26 2024-02-07 株式会社デンソー 半導体装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003017698A (ja) 2001-07-04 2003-01-17 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2003174169A (ja) 2001-12-07 2003-06-20 Denso Corp 半導体装置
WO2011045834A1 (ja) 2009-10-14 2011-04-21 三菱電機株式会社 電力用半導体装置
JP2013026563A (ja) 2011-07-25 2013-02-04 Mitsubishi Electric Corp 炭化珪素半導体装置
JP2013098316A (ja) 2011-10-31 2013-05-20 Mitsubishi Electric Corp 炭化珪素半導体装置
JP2017011007A (ja) 2015-06-18 2017-01-12 三菱電機株式会社 電力用半導体装置および電力用半導体装置の製造方法
WO2019124384A1 (ja) 2017-12-19 2019-06-27 三菱電機株式会社 炭化珪素半導体装置および電力変換装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007115888A (ja) 2005-10-20 2007-05-10 Matsushita Electric Ind Co Ltd 半導体装置
JP2008085188A (ja) 2006-09-28 2008-04-10 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置
JP5285874B2 (ja) 2007-07-03 2013-09-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2010056380A (ja) * 2008-08-29 2010-03-11 Panasonic Corp 半導体装置及びその製造方法
JP2010238885A (ja) 2009-03-31 2010-10-21 Renesas Electronics Corp 半導体装置とその製造方法
CN102473723B (zh) * 2009-07-15 2014-12-03 三菱电机株式会社 功率用半导体装置及其制造方法
US9324782B2 (en) * 2012-01-06 2016-04-26 Mitsubishi Electric Corporation Semiconductor device
CN108886038B (zh) * 2016-04-11 2023-05-02 三菱电机株式会社 半导体装置
WO2018155553A1 (ja) * 2017-02-24 2018-08-30 三菱電機株式会社 炭化珪素半導体装置および電力変換装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003017698A (ja) 2001-07-04 2003-01-17 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2003174169A (ja) 2001-12-07 2003-06-20 Denso Corp 半導体装置
WO2011045834A1 (ja) 2009-10-14 2011-04-21 三菱電機株式会社 電力用半導体装置
JP2013026563A (ja) 2011-07-25 2013-02-04 Mitsubishi Electric Corp 炭化珪素半導体装置
JP2013098316A (ja) 2011-10-31 2013-05-20 Mitsubishi Electric Corp 炭化珪素半導体装置
JP2017011007A (ja) 2015-06-18 2017-01-12 三菱電機株式会社 電力用半導体装置および電力用半導体装置の製造方法
WO2019124384A1 (ja) 2017-12-19 2019-06-27 三菱電機株式会社 炭化珪素半導体装置および電力変換装置

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Publication number Publication date
WO2021245992A1 (ja) 2021-12-09
US12363943B2 (en) 2025-07-15
US20230253492A1 (en) 2023-08-10
DE112021003165T5 (de) 2023-04-13
CN115699329B (zh) 2025-10-10
CN115699329A (zh) 2023-02-03
JPWO2021245992A1 (https=) 2021-12-09

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