JPWO2021245992A1 - - Google Patents
Info
- Publication number
- JPWO2021245992A1 JPWO2021245992A1 JP2022528430A JP2022528430A JPWO2021245992A1 JP WO2021245992 A1 JPWO2021245992 A1 JP WO2021245992A1 JP 2022528430 A JP2022528430 A JP 2022528430A JP 2022528430 A JP2022528430 A JP 2022528430A JP WO2021245992 A1 JPWO2021245992 A1 JP WO2021245992A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
- H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
- H10D64/01366—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the semiconductor being silicon carbide
Landscapes
- Electrodes Of Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020097541 | 2020-06-04 | ||
| JP2020097541 | 2020-06-04 | ||
| PCT/JP2021/005821 WO2021245992A1 (ja) | 2020-06-04 | 2021-02-17 | 半導体装置および電力変換装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021245992A1 true JPWO2021245992A1 (https=) | 2021-12-09 |
| JPWO2021245992A5 JPWO2021245992A5 (https=) | 2022-07-27 |
| JP7262672B2 JP7262672B2 (ja) | 2023-04-21 |
Family
ID=78830780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022528430A Active JP7262672B2 (ja) | 2020-06-04 | 2021-02-17 | 半導体装置および電力変換装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12363943B2 (https=) |
| JP (1) | JP7262672B2 (https=) |
| CN (1) | CN115699329B (https=) |
| DE (1) | DE112021003165T5 (https=) |
| WO (1) | WO2021245992A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024016733A (ja) * | 2022-07-26 | 2024-02-07 | 株式会社デンソー | 半導体装置 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003017698A (ja) * | 2001-07-04 | 2003-01-17 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| JP2003174169A (ja) * | 2001-12-07 | 2003-06-20 | Denso Corp | 半導体装置 |
| WO2011045834A1 (ja) * | 2009-10-14 | 2011-04-21 | 三菱電機株式会社 | 電力用半導体装置 |
| JP2013026563A (ja) * | 2011-07-25 | 2013-02-04 | Mitsubishi Electric Corp | 炭化珪素半導体装置 |
| JP2013098316A (ja) * | 2011-10-31 | 2013-05-20 | Mitsubishi Electric Corp | 炭化珪素半導体装置 |
| JP2017011007A (ja) * | 2015-06-18 | 2017-01-12 | 三菱電機株式会社 | 電力用半導体装置および電力用半導体装置の製造方法 |
| WO2019124384A1 (ja) * | 2017-12-19 | 2019-06-27 | 三菱電機株式会社 | 炭化珪素半導体装置および電力変換装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007115888A (ja) | 2005-10-20 | 2007-05-10 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| JP2008085188A (ja) | 2006-09-28 | 2008-04-10 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
| JP5285874B2 (ja) | 2007-07-03 | 2013-09-11 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2010056380A (ja) * | 2008-08-29 | 2010-03-11 | Panasonic Corp | 半導体装置及びその製造方法 |
| JP2010238885A (ja) | 2009-03-31 | 2010-10-21 | Renesas Electronics Corp | 半導体装置とその製造方法 |
| CN102473723B (zh) * | 2009-07-15 | 2014-12-03 | 三菱电机株式会社 | 功率用半导体装置及其制造方法 |
| US9324782B2 (en) * | 2012-01-06 | 2016-04-26 | Mitsubishi Electric Corporation | Semiconductor device |
| CN108886038B (zh) * | 2016-04-11 | 2023-05-02 | 三菱电机株式会社 | 半导体装置 |
| WO2018155553A1 (ja) * | 2017-02-24 | 2018-08-30 | 三菱電機株式会社 | 炭化珪素半導体装置および電力変換装置 |
-
2021
- 2021-02-17 WO PCT/JP2021/005821 patent/WO2021245992A1/ja not_active Ceased
- 2021-02-17 US US17/918,117 patent/US12363943B2/en active Active
- 2021-02-17 CN CN202180038495.5A patent/CN115699329B/zh active Active
- 2021-02-17 JP JP2022528430A patent/JP7262672B2/ja active Active
- 2021-02-17 DE DE112021003165.1T patent/DE112021003165T5/de active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003017698A (ja) * | 2001-07-04 | 2003-01-17 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| JP2003174169A (ja) * | 2001-12-07 | 2003-06-20 | Denso Corp | 半導体装置 |
| WO2011045834A1 (ja) * | 2009-10-14 | 2011-04-21 | 三菱電機株式会社 | 電力用半導体装置 |
| JP2013026563A (ja) * | 2011-07-25 | 2013-02-04 | Mitsubishi Electric Corp | 炭化珪素半導体装置 |
| JP2013098316A (ja) * | 2011-10-31 | 2013-05-20 | Mitsubishi Electric Corp | 炭化珪素半導体装置 |
| JP2017011007A (ja) * | 2015-06-18 | 2017-01-12 | 三菱電機株式会社 | 電力用半導体装置および電力用半導体装置の製造方法 |
| WO2019124384A1 (ja) * | 2017-12-19 | 2019-06-27 | 三菱電機株式会社 | 炭化珪素半導体装置および電力変換装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021245992A1 (ja) | 2021-12-09 |
| JP7262672B2 (ja) | 2023-04-21 |
| US12363943B2 (en) | 2025-07-15 |
| US20230253492A1 (en) | 2023-08-10 |
| DE112021003165T5 (de) | 2023-04-13 |
| CN115699329B (zh) | 2025-10-10 |
| CN115699329A (zh) | 2023-02-03 |
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