CN115699329B - 半导体装置以及电力变换装置 - Google Patents

半导体装置以及电力变换装置

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Publication number
CN115699329B
CN115699329B CN202180038495.5A CN202180038495A CN115699329B CN 115699329 B CN115699329 B CN 115699329B CN 202180038495 A CN202180038495 A CN 202180038495A CN 115699329 B CN115699329 B CN 115699329B
Authority
CN
China
Prior art keywords
gate
insulating film
well region
region
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202180038495.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN115699329A (zh
Inventor
海老原洪平
日野史郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN115699329A publication Critical patent/CN115699329A/zh
Application granted granted Critical
Publication of CN115699329B publication Critical patent/CN115699329B/zh
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01366—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the semiconductor being silicon carbide

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
CN202180038495.5A 2020-06-04 2021-02-17 半导体装置以及电力变换装置 Active CN115699329B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020097541 2020-06-04
JP2020-097541 2020-06-04
PCT/JP2021/005821 WO2021245992A1 (ja) 2020-06-04 2021-02-17 半導体装置および電力変換装置

Publications (2)

Publication Number Publication Date
CN115699329A CN115699329A (zh) 2023-02-03
CN115699329B true CN115699329B (zh) 2025-10-10

Family

ID=78830780

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180038495.5A Active CN115699329B (zh) 2020-06-04 2021-02-17 半导体装置以及电力变换装置

Country Status (5)

Country Link
US (1) US12363943B2 (https=)
JP (1) JP7262672B2 (https=)
CN (1) CN115699329B (https=)
DE (1) DE112021003165T5 (https=)
WO (1) WO2021245992A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024016733A (ja) * 2022-07-26 2024-02-07 株式会社デンソー 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102576728A (zh) * 2009-10-14 2012-07-11 三菱电机株式会社 功率用半导体装置
JP2013098316A (ja) * 2011-10-31 2013-05-20 Mitsubishi Electric Corp 炭化珪素半導体装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003017698A (ja) 2001-07-04 2003-01-17 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP4140232B2 (ja) 2001-12-07 2008-08-27 株式会社デンソー 半導体装置
JP2007115888A (ja) 2005-10-20 2007-05-10 Matsushita Electric Ind Co Ltd 半導体装置
JP2008085188A (ja) 2006-09-28 2008-04-10 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置
JP5285874B2 (ja) 2007-07-03 2013-09-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2010056380A (ja) * 2008-08-29 2010-03-11 Panasonic Corp 半導体装置及びその製造方法
JP2010238885A (ja) 2009-03-31 2010-10-21 Renesas Electronics Corp 半導体装置とその製造方法
CN102473723B (zh) * 2009-07-15 2014-12-03 三菱电机株式会社 功率用半导体装置及其制造方法
JP5677222B2 (ja) * 2011-07-25 2015-02-25 三菱電機株式会社 炭化珪素半導体装置
US9324782B2 (en) * 2012-01-06 2016-04-26 Mitsubishi Electric Corporation Semiconductor device
JP6351547B2 (ja) 2015-06-18 2018-07-04 三菱電機株式会社 電力用半導体装置および電力用半導体装置の製造方法
CN108886038B (zh) * 2016-04-11 2023-05-02 三菱电机株式会社 半导体装置
WO2018155553A1 (ja) * 2017-02-24 2018-08-30 三菱電機株式会社 炭化珪素半導体装置および電力変換装置
CN111480239B (zh) 2017-12-19 2023-09-15 三菱电机株式会社 碳化硅半导体装置以及电力变换装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102576728A (zh) * 2009-10-14 2012-07-11 三菱电机株式会社 功率用半导体装置
JP2013098316A (ja) * 2011-10-31 2013-05-20 Mitsubishi Electric Corp 炭化珪素半導体装置

Also Published As

Publication number Publication date
WO2021245992A1 (ja) 2021-12-09
JP7262672B2 (ja) 2023-04-21
US12363943B2 (en) 2025-07-15
US20230253492A1 (en) 2023-08-10
DE112021003165T5 (de) 2023-04-13
CN115699329A (zh) 2023-02-03
JPWO2021245992A1 (https=) 2021-12-09

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