JP7252522B2 - レジスト下層膜形成組成物 - Google Patents

レジスト下層膜形成組成物 Download PDF

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Publication number
JP7252522B2
JP7252522B2 JP2020531378A JP2020531378A JP7252522B2 JP 7252522 B2 JP7252522 B2 JP 7252522B2 JP 2020531378 A JP2020531378 A JP 2020531378A JP 2020531378 A JP2020531378 A JP 2020531378A JP 7252522 B2 JP7252522 B2 JP 7252522B2
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group
carbon atoms
ring
independently
resist underlayer
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Japanese (ja)
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JPWO2020017626A5 (https=
JPWO2020017626A1 (ja
Inventor
裕和 西巻
誠 中島
圭祐 橋本
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Nissan Chemical Corp
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Nissan Chemical Corp
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Priority to JP2023021196A priority Critical patent/JP7545125B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G12/00—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
    • C08G12/02—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes
    • C08G12/04—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with acyclic or carbocyclic compounds
    • C08G12/06—Amines
    • C08G12/08—Amines aromatic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G12/00—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
    • C08G12/02—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes
    • C08G12/26—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • C08G8/20—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with polyhydric phenols
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D161/00—Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
    • C09D161/04—Condensation polymers of aldehydes or ketones with phenols only
    • C09D161/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • C09D161/12—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols with polyhydric phenols
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D161/00—Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
    • C09D161/20—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2020531378A 2018-07-20 2019-07-19 レジスト下層膜形成組成物 Active JP7252522B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023021196A JP7545125B2 (ja) 2018-07-20 2023-02-14 レジスト下層膜形成組成物の製造方法、パターニングされた基板の製造方法および半導体装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018137157 2018-07-20
JP2018137157 2018-07-20
PCT/JP2019/028414 WO2020017626A1 (ja) 2018-07-20 2019-07-19 レジスト下層膜形成組成物

Related Child Applications (1)

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JP2023021196A Division JP7545125B2 (ja) 2018-07-20 2023-02-14 レジスト下層膜形成組成物の製造方法、パターニングされた基板の製造方法および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPWO2020017626A1 JPWO2020017626A1 (ja) 2021-08-05
JPWO2020017626A5 JPWO2020017626A5 (https=) 2022-06-29
JP7252522B2 true JP7252522B2 (ja) 2023-04-05

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Family Applications (2)

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JP2020531378A Active JP7252522B2 (ja) 2018-07-20 2019-07-19 レジスト下層膜形成組成物
JP2023021196A Active JP7545125B2 (ja) 2018-07-20 2023-02-14 レジスト下層膜形成組成物の製造方法、パターニングされた基板の製造方法および半導体装置の製造方法

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JP2023021196A Active JP7545125B2 (ja) 2018-07-20 2023-02-14 レジスト下層膜形成組成物の製造方法、パターニングされた基板の製造方法および半導体装置の製造方法

Country Status (6)

Country Link
US (1) US20210271169A1 (https=)
JP (2) JP7252522B2 (https=)
KR (1) KR102702755B1 (https=)
CN (1) CN112470076A (https=)
TW (1) TWI884137B (https=)
WO (1) WO2020017626A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7082087B2 (ja) * 2019-05-08 2022-06-07 信越化学工業株式会社 有機膜形成用組成物、パターン形成方法及び重合体
US20230359123A1 (en) * 2020-08-05 2023-11-09 Nissan Chemical Corporation Resist underlayer film-forming composition
WO2022191037A1 (ja) * 2021-03-11 2022-09-15 Jsr株式会社 半導体基板の製造方法、組成物、重合体及び重合体の製造方法
CN119365829A (zh) * 2022-06-17 2025-01-24 日产化学株式会社 抗蚀剂下层膜形成用组合物
KR102723460B1 (ko) * 2022-09-14 2024-10-29 주식회사 켐폴 반사방지용 하드마스크 조성물
WO2025205091A1 (ja) * 2024-03-25 2025-10-02 Jsr株式会社 半導体基板の製造方法、組成物及び化合物の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015151803A1 (ja) 2014-03-31 2015-10-08 日産化学工業株式会社 芳香族ビニル化合物が付加したノボラック樹脂を含むレジスト下層膜形成組成物
JP2017125890A (ja) 2016-01-12 2017-07-20 信越化学工業株式会社 多層膜形成方法及びパターン形成方法

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US5223602A (en) * 1992-01-24 1993-06-29 Nippon Steel Chemical Co., Ltd. Naphthol aralkyl resins and cured products thereof
JP4252872B2 (ja) 2003-10-06 2009-04-08 信越化学工業株式会社 レジスト下層膜材料およびパターン形成方法
US9263286B2 (en) * 2011-09-29 2016-02-16 Nissan Chemical Industries, Ltd. Diarylamine novolac resin
WO2013146670A1 (ja) * 2012-03-27 2013-10-03 日産化学工業株式会社 フェニルインドール含有ノボラック樹脂を含むレジスト下層膜形成組成物
US9244353B2 (en) * 2012-08-10 2016-01-26 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition
JP5614519B1 (ja) * 2013-04-19 2014-10-29 Dic株式会社 変性フェノール樹脂、変性フェノール樹脂の製造方法、変性エポキシ樹脂、変性エポキシ樹脂の製造方法、硬化性樹脂組成物、その硬化物、及びプリント配線基板
KR102229657B1 (ko) * 2013-05-13 2021-03-18 닛산 가가쿠 가부시키가이샤 비스페놀알데히드를 이용한 노볼락 수지 함유 레지스트 하층막 형성 조성물
SG11201606648QA (en) * 2014-02-12 2016-09-29 Nissan Chemical Ind Ltd Film-forming composition including fluorine-containing surfactant
US11650505B2 (en) * 2014-08-08 2023-05-16 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition containing novolac resin reacted with aromatic methylol compound
CN109154778B (zh) * 2016-05-20 2022-08-02 日产化学株式会社 抗蚀剂下层膜形成用组合物

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015151803A1 (ja) 2014-03-31 2015-10-08 日産化学工業株式会社 芳香族ビニル化合物が付加したノボラック樹脂を含むレジスト下層膜形成組成物
JP2017125890A (ja) 2016-01-12 2017-07-20 信越化学工業株式会社 多層膜形成方法及びパターン形成方法

Also Published As

Publication number Publication date
US20210271169A1 (en) 2021-09-02
TWI884137B (zh) 2025-05-21
CN112470076A (zh) 2021-03-09
TW202012531A (zh) 2020-04-01
WO2020017626A1 (ja) 2020-01-23
KR20210032460A (ko) 2021-03-24
JP7545125B2 (ja) 2024-09-04
JPWO2020017626A1 (ja) 2021-08-05
KR102702755B1 (ko) 2024-09-05
JP2023062060A (ja) 2023-05-02

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