CN112470076A - 抗蚀剂下层膜形成用组合物 - Google Patents

抗蚀剂下层膜形成用组合物 Download PDF

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Publication number
CN112470076A
CN112470076A CN201980048174.6A CN201980048174A CN112470076A CN 112470076 A CN112470076 A CN 112470076A CN 201980048174 A CN201980048174 A CN 201980048174A CN 112470076 A CN112470076 A CN 112470076A
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CN
China
Prior art keywords
group
carbon atoms
ring
independently
resist underlayer
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Pending
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CN201980048174.6A
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English (en)
Chinese (zh)
Inventor
西卷裕和
中岛诚
桥本圭祐
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Nissan Chemical Corp
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Nissan Chemical Corp
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Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Publication of CN112470076A publication Critical patent/CN112470076A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G12/00—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
    • C08G12/02—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes
    • C08G12/04—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with acyclic or carbocyclic compounds
    • C08G12/06—Amines
    • C08G12/08—Amines aromatic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G12/00—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
    • C08G12/02—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes
    • C08G12/26—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • C08G8/20—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with polyhydric phenols
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D161/00—Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
    • C09D161/04—Condensation polymers of aldehydes or ketones with phenols only
    • C09D161/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • C09D161/12—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols with polyhydric phenols
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D161/00—Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
    • C09D161/20—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201980048174.6A 2018-07-20 2019-07-19 抗蚀剂下层膜形成用组合物 Pending CN112470076A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018-137157 2018-07-20
JP2018137157 2018-07-20
PCT/JP2019/028414 WO2020017626A1 (ja) 2018-07-20 2019-07-19 レジスト下層膜形成組成物

Publications (1)

Publication Number Publication Date
CN112470076A true CN112470076A (zh) 2021-03-09

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980048174.6A Pending CN112470076A (zh) 2018-07-20 2019-07-19 抗蚀剂下层膜形成用组合物

Country Status (6)

Country Link
US (1) US20210271169A1 (https=)
JP (2) JP7252522B2 (https=)
KR (1) KR102702755B1 (https=)
CN (1) CN112470076A (https=)
TW (1) TWI884137B (https=)
WO (1) WO2020017626A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116057095A (zh) * 2020-08-05 2023-05-02 日产化学株式会社 抗蚀剂下层膜形成用组合物

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7082087B2 (ja) * 2019-05-08 2022-06-07 信越化学工業株式会社 有機膜形成用組成物、パターン形成方法及び重合体
WO2022191037A1 (ja) * 2021-03-11 2022-09-15 Jsr株式会社 半導体基板の製造方法、組成物、重合体及び重合体の製造方法
CN119365829A (zh) * 2022-06-17 2025-01-24 日产化学株式会社 抗蚀剂下层膜形成用组合物
KR102723460B1 (ko) * 2022-09-14 2024-10-29 주식회사 켐폴 반사방지용 하드마스크 조성물
WO2025205091A1 (ja) * 2024-03-25 2025-10-02 Jsr株式会社 半導体基板の製造方法、組成物及び化合物の製造方法

Citations (5)

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Publication number Priority date Publication date Assignee Title
CN105209974A (zh) * 2013-05-13 2015-12-30 日产化学工业株式会社 含有使用双酚醛的酚醛清漆树脂的抗蚀剂下层膜形成用组合物
US20160060384A1 (en) * 2013-04-19 2016-03-03 Dic Corporation Modified phenolic resin, method for producing modified phenolic resin, modified epoxy resin, method for producing modified epoxy resin, curable resin composition, cured product of same, and printed wiring board
CN106133607A (zh) * 2014-03-31 2016-11-16 日产化学工业株式会社 含有芳香族乙烯基化合物加成的酚醛清漆树脂的抗蚀剂下层膜形成用组合物
JP2017125890A (ja) * 2016-01-12 2017-07-20 信越化学工業株式会社 多層膜形成方法及びパターン形成方法
WO2017199768A1 (ja) * 2016-05-20 2017-11-23 日産化学工業株式会社 レジスト下層膜形成組成物

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US5223602A (en) * 1992-01-24 1993-06-29 Nippon Steel Chemical Co., Ltd. Naphthol aralkyl resins and cured products thereof
JP4252872B2 (ja) 2003-10-06 2009-04-08 信越化学工業株式会社 レジスト下層膜材料およびパターン形成方法
US9263286B2 (en) * 2011-09-29 2016-02-16 Nissan Chemical Industries, Ltd. Diarylamine novolac resin
WO2013146670A1 (ja) * 2012-03-27 2013-10-03 日産化学工業株式会社 フェニルインドール含有ノボラック樹脂を含むレジスト下層膜形成組成物
US9244353B2 (en) * 2012-08-10 2016-01-26 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition
SG11201606648QA (en) * 2014-02-12 2016-09-29 Nissan Chemical Ind Ltd Film-forming composition including fluorine-containing surfactant
US11650505B2 (en) * 2014-08-08 2023-05-16 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition containing novolac resin reacted with aromatic methylol compound

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
US20160060384A1 (en) * 2013-04-19 2016-03-03 Dic Corporation Modified phenolic resin, method for producing modified phenolic resin, modified epoxy resin, method for producing modified epoxy resin, curable resin composition, cured product of same, and printed wiring board
CN105209974A (zh) * 2013-05-13 2015-12-30 日产化学工业株式会社 含有使用双酚醛的酚醛清漆树脂的抗蚀剂下层膜形成用组合物
CN106133607A (zh) * 2014-03-31 2016-11-16 日产化学工业株式会社 含有芳香族乙烯基化合物加成的酚醛清漆树脂的抗蚀剂下层膜形成用组合物
JP2017125890A (ja) * 2016-01-12 2017-07-20 信越化学工業株式会社 多層膜形成方法及びパターン形成方法
WO2017199768A1 (ja) * 2016-05-20 2017-11-23 日産化学工業株式会社 レジスト下層膜形成組成物

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116057095A (zh) * 2020-08-05 2023-05-02 日产化学株式会社 抗蚀剂下层膜形成用组合物

Also Published As

Publication number Publication date
US20210271169A1 (en) 2021-09-02
TWI884137B (zh) 2025-05-21
TW202012531A (zh) 2020-04-01
WO2020017626A1 (ja) 2020-01-23
KR20210032460A (ko) 2021-03-24
JP7545125B2 (ja) 2024-09-04
JPWO2020017626A1 (ja) 2021-08-05
JP7252522B2 (ja) 2023-04-05
KR102702755B1 (ko) 2024-09-05
JP2023062060A (ja) 2023-05-02

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