JP7249814B2 - 熱処理装置および熱処理方法 - Google Patents
熱処理装置および熱処理方法 Download PDFInfo
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- JP7249814B2 JP7249814B2 JP2019038355A JP2019038355A JP7249814B2 JP 7249814 B2 JP7249814 B2 JP 7249814B2 JP 2019038355 A JP2019038355 A JP 2019038355A JP 2019038355 A JP2019038355 A JP 2019038355A JP 7249814 B2 JP7249814 B2 JP 7249814B2
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- 238000010438 heat treatment Methods 0.000 title claims description 191
- 238000000034 method Methods 0.000 title claims description 35
- 239000000758 substrate Substances 0.000 claims description 352
- 238000012545 processing Methods 0.000 claims description 49
- 230000005856 abnormality Effects 0.000 claims description 45
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- 238000012546 transfer Methods 0.000 description 14
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- 229920002530 polyetherether ketone Polymers 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
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- 238000004590 computer program Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
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- 238000002474 experimental method Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019038355A JP7249814B2 (ja) | 2019-03-04 | 2019-03-04 | 熱処理装置および熱処理方法 |
PCT/JP2020/002793 WO2020179283A1 (ja) | 2019-03-04 | 2020-01-27 | 熱処理装置および熱処理方法 |
TW109104485A TWI794585B (zh) | 2019-03-04 | 2020-02-13 | 熱處理裝置及熱處理方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019038355A JP7249814B2 (ja) | 2019-03-04 | 2019-03-04 | 熱処理装置および熱処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020145215A JP2020145215A (ja) | 2020-09-10 |
JP7249814B2 true JP7249814B2 (ja) | 2023-03-31 |
Family
ID=72338277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019038355A Active JP7249814B2 (ja) | 2019-03-04 | 2019-03-04 | 熱処理装置および熱処理方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7249814B2 (zh) |
TW (1) | TWI794585B (zh) |
WO (1) | WO2020179283A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7474688B2 (ja) | 2020-12-03 | 2024-04-25 | 東京エレクトロン株式会社 | 補正方法及び基板搬送装置 |
TW202326927A (zh) * | 2021-10-15 | 2023-07-01 | 日商東京威力科創股份有限公司 | 基板處理裝置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005117007A (ja) | 2003-09-19 | 2005-04-28 | Dainippon Screen Mfg Co Ltd | 基板処理ユニット、基板載置状態検出方法および基板処理装置 |
JP2011243834A (ja) | 2010-05-20 | 2011-12-01 | Tokyo Electron Ltd | プラズマ処理装置,基板保持機構,基板位置ずれ検出方法 |
JP2018157000A (ja) | 2017-03-16 | 2018-10-04 | 株式会社日本製鋼所 | レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2884011B2 (ja) * | 1990-09-29 | 1999-04-19 | イビデン株式会社 | 電子部品搭載用基板の外形加工装置 |
JPH10284360A (ja) * | 1997-04-02 | 1998-10-23 | Hitachi Ltd | 基板温度制御装置及び方法 |
JPH1187480A (ja) * | 1997-09-11 | 1999-03-30 | Ulvac Japan Ltd | 被吸着物の吸着状態モニター方法及び真空装置 |
JP4666473B2 (ja) * | 2005-05-12 | 2011-04-06 | 大日本スクリーン製造株式会社 | 基板熱処理装置 |
US8003919B2 (en) * | 2005-12-06 | 2011-08-23 | Dainippon Screen Mfg. Co., Ltd. | Substrate heat treatment apparatus |
JP4781867B2 (ja) * | 2006-03-23 | 2011-09-28 | 大日本スクリーン製造株式会社 | 熱処理装置 |
JP5504793B2 (ja) * | 2009-09-26 | 2014-05-28 | 東京エレクトロン株式会社 | 熱処理装置及び冷却方法 |
-
2019
- 2019-03-04 JP JP2019038355A patent/JP7249814B2/ja active Active
-
2020
- 2020-01-27 WO PCT/JP2020/002793 patent/WO2020179283A1/ja active Application Filing
- 2020-02-13 TW TW109104485A patent/TWI794585B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005117007A (ja) | 2003-09-19 | 2005-04-28 | Dainippon Screen Mfg Co Ltd | 基板処理ユニット、基板載置状態検出方法および基板処理装置 |
JP2011243834A (ja) | 2010-05-20 | 2011-12-01 | Tokyo Electron Ltd | プラズマ処理装置,基板保持機構,基板位置ずれ検出方法 |
JP2018157000A (ja) | 2017-03-16 | 2018-10-04 | 株式会社日本製鋼所 | レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2020179283A1 (ja) | 2020-09-10 |
TWI794585B (zh) | 2023-03-01 |
JP2020145215A (ja) | 2020-09-10 |
TW202040695A (zh) | 2020-11-01 |
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