JP7248804B2 - 埋込みｐ型層を有する第ＩＩＩ族窒化物高電子移動度トランジスタおよびその作製プロセス - Google Patents

埋込みｐ型層を有する第ＩＩＩ族窒化物高電子移動度トランジスタおよびその作製プロセス Download PDF

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JP7248804B2
JP7248804B2 JP2021544206A JP2021544206A JP7248804B2 JP 7248804 B2 JP7248804 B2 JP 7248804B2 JP 2021544206 A JP2021544206 A JP 2021544206A JP 2021544206 A JP2021544206 A JP 2021544206A JP 7248804 B2 JP7248804 B2 JP 7248804B2
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layer
type material
transistor
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substrate
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JP2022519825A (ja
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サプタリシ スリラム
トーマス スミス
アレクサンダー スヴォーロフ
クリステル ハリン
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Wolfspeed Inc
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Wolfspeed Inc
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
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    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8124—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with multiple gate

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2021544206A 2019-01-28 2020-01-28 埋込みｐ型層を有する第ＩＩＩ族窒化物高電子移動度トランジスタおよびその作製プロセス Active JP7248804B2 (ja)

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JP2023000240A JP2023041688A (ja) 2019-01-28 2023-01-04 埋込みｐ型層を有する第ＩＩＩ族窒化物高電子移動度トランジスタおよびその作製プロセス

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US16/260,095 US10840334B2 (en) 2016-06-24 2019-01-28 Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
US16/260,095 2019-01-28
US16/376,596 US10892356B2 (en) 2016-06-24 2019-04-05 Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
US16/376,596 2019-04-05
PCT/US2020/015331 WO2020159934A1 (en) 2019-01-28 2020-01-28 Group iii-nitride high-electron mobility transistors with buried p-type layers and process for making the same

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JP2023000240A Division JP2023041688A (ja) 2019-01-28 2023-01-04 埋込みｐ型層を有する第ＩＩＩ族窒化物高電子移動度トランジスタおよびその作製プロセス

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JP2023000240A Pending JP2023041688A (ja) 2019-01-28 2023-01-04 埋込みｐ型層を有する第ＩＩＩ族窒化物高電子移動度トランジスタおよびその作製プロセス

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EP (1) EP3918636A4 (ko)
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KR (3) KR102626266B1 (ko)
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WO (1) WO2020159934A1 (ko)

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CN116457946A (zh) * 2021-08-03 2023-07-18 美国亚德诺半导体公司 氮化镓再生长中的杂质还原技术

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006507683A (ja) 2002-11-26 2006-03-02 クリー　インコーポレイテッド ソース領域の下にｐ型埋込み層を備えたトランジスタ及びその作製方法。
JP2012156320A (ja) 2011-01-26 2012-08-16 Toshiba Corp 半導体素子
JP2012231002A (ja) 2011-04-26 2012-11-22 Advanced Power Device Research Association 半導体装置
JP2013131755A (ja) 2011-12-20 2013-07-04 Infineon Technologies Austria Ag 埋込形フィールド・プレート（ｂｕｒｉｅｄｆｉｅｌｄｐｌａｔｅ）を有する化合物半導体デバイス
JP2014520405A (ja) 2011-06-20 2014-08-21 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 電流アパーチャ垂直電子トランジスタ
JP2017059786A (ja) 2015-09-18 2017-03-23 パナソニックＩｐマネジメント株式会社 半導体装置
WO2017223403A1 (en) 2016-06-24 2017-12-28 Cree, Inc. Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates
JP2019091757A (ja) 2017-11-13 2019-06-13 富士通株式会社 化合物半導体装置及びその製造方法、電源装置、高周波増幅器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5653326B2 (ja) * 2011-09-12 2015-01-14 株式会社東芝 窒化物半導体装置
US9728630B2 (en) * 2014-09-05 2017-08-08 Infineon Technologies Austria Ag High-electron-mobility transistor having a buried field plate
US10290566B2 (en) * 2014-09-23 2019-05-14 Infineon Technologies Austria Ag Electronic component
JP6677598B2 (ja) * 2016-07-25 2020-04-08 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006507683A (ja) 2002-11-26 2006-03-02 クリー　インコーポレイテッド ソース領域の下にｐ型埋込み層を備えたトランジスタ及びその作製方法。
JP2012156320A (ja) 2011-01-26 2012-08-16 Toshiba Corp 半導体素子
JP2012231002A (ja) 2011-04-26 2012-11-22 Advanced Power Device Research Association 半導体装置
JP2014520405A (ja) 2011-06-20 2014-08-21 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 電流アパーチャ垂直電子トランジスタ
JP2013131755A (ja) 2011-12-20 2013-07-04 Infineon Technologies Austria Ag 埋込形フィールド・プレート（ｂｕｒｉｅｄｆｉｅｌｄｐｌａｔｅ）を有する化合物半導体デバイス
JP2017059786A (ja) 2015-09-18 2017-03-23 パナソニックＩｐマネジメント株式会社 半導体装置
WO2017223403A1 (en) 2016-06-24 2017-12-28 Cree, Inc. Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates
JP2019519121A (ja) 2016-06-24 2019-07-04 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． シリコンカーバイド基板に深く注入されたｐ−型層を有する窒化ガリウム高電子移動度トランジスタ
JP2019091757A (ja) 2017-11-13 2019-06-13 富士通株式会社 化合物半導体装置及びその製造方法、電源装置、高周波増幅器

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CN113950748A (zh) 2022-01-18
KR20210119511A (ko) 2021-10-05
EP3918636A1 (en) 2021-12-08
KR20240010555A (ko) 2024-01-23
JP2022519825A (ja) 2022-03-25
WO2020159934A1 (en) 2020-08-06
EP3918636A4 (en) 2023-03-08
JP2023041688A (ja) 2023-03-24
KR20230025527A (ko) 2023-02-21
KR102626266B1 (ko) 2024-01-16

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