JP6677598B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6677598B2 JP6677598B2 JP2016145268A JP2016145268A JP6677598B2 JP 6677598 B2 JP6677598 B2 JP 6677598B2 JP 2016145268 A JP2016145268 A JP 2016145268A JP 2016145268 A JP2016145268 A JP 2016145268A JP 6677598 B2 JP6677598 B2 JP 6677598B2
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Description
以下、図面を参照しながら本実施の形態の半導体装置について詳細に説明する。
図1は、本実施の形態の半導体装置の構成を示す断面図である。図1等に示す本実施の形態の半導体装置(半導体素子)は、窒化物半導体を用いたMIS(Metal Insulator semiconductor)型の電界効果トランジスタ(FET;Field Effect Transistor)である。この半導体装置は、高電子移動度トランジスタ(HEMT:High Electron Mobility Transistor)型のパワートランジスタとして用いることができる。本実施の形態の半導体装置は、いわゆるリセスゲート型の半導体装置である。
次いで、図2〜図15を参照しながら、本実施の形態の半導体装置の製造方法を説明するとともに、当該半導体装置の構成をより明確にする。図2〜図15は、本実施の形態の半導体装置の製造工程を示す断面図または平面図である。
δVt=(εn/tp)/(εi/ti)×Vsub・・・(1)
図16は、外部電源電圧と閾値電圧との関係を示すグラフである。横軸は、外部電源電圧(V)を示し、縦軸は、閾値電圧(V)を示す。具体的には、本実施の形態の半導体装置(図1)において、第4電極4Eに、電圧印加手段2Pである外部直流電源より主として負電圧(外部電源電圧)を加えた場合の閾値電圧の変化を示す。ゲート絶縁膜(ここでは、Al2O3で、比誘電率は10である)の厚さを100nmとした場合において、グラフ(a)は、第3の窒化物半導体層3Sの厚さを50nmとした場合を示し、グラフ(b)は、第3の窒化物半導体層3Sの厚さを100nmとした場合を示し、グラフ(c)は、第3の窒化物半導体層3Sの厚さを200nmとした場合を示す。なお、ソース電極SEの電圧は、接地電圧(0V)とした。
実施の形態1(図15)においては、平面視において、一本のライン状のゲート電極GEの一方の側に一本のライン状のソース電極SEを設け、他方の側に一本のライン状のドレイン電極DEを設け、さらに、これらの電極上に配線(ソース線SL、ドレイン線DL)を設けたが、これらの電極や配線のレイアウトは、適宜変更可能である。例えば、各配線の平面形状を櫛歯形状としてもよい。
実施の形態1および2においては、リセスゲート型の半導体装置を例示したが、他の構成の半導体装置としてもよい。例えば、本実施の形態のように、ゲート電極の下にゲート接合層を配置した接合型の半導体装置を用いてもよい。
図26は、本実施の形態の半導体装置の構成を示す断面図である。本実施の形態の半導体装置(半導体素子)は、窒化物半導体を用いたトランジスタである。この半導体装置は、高電子移動度トランジスタ(HEMT)型のパワートランジスタとして用いることができる。
δVt=(εn/tp)/(εn/ts)×Vsub・・・(2)
図27は、外部電源電圧と閾値電圧との関係を示すグラフである。横軸は、外部電源電圧(V)を示し、縦軸は、閾値電圧(V)を示す。具体的には、本実施の形態の半導体装置(図26)において、第4電極4Eに、電圧印加手段2Pである外部直流電源より負電圧(外部電源電圧)を加えた場合の閾値電圧の変化を示す。距離tsが20nmの場合において、グラフ(a)は、距離tpを50nmとした場合を示し、グラフ(b)は、距離tpを100nmとした場合を示し、グラフ(c)は、距離tpを200nmとした場合を示す。なお、ソース電極SEの電圧は、接地電圧(0V)とした。
次いで、図26を参照しながら、本実施の形態の半導体装置の製造方法を説明するとともに、当該半導体装置の構成をより明確にする。本実施の形態の半導体装置は、実施の形態1の場合と類似の工程により形成することができる。
上記実施の形態の半導体装置(MISFET)の適用回路に制限はないが、例えば、ハーフブリッジ回路に適用することができる。
実施の形態1(図1)においては、第5の窒化物半導体層(障壁層)5S上に、ソース電極SEとソース線SLの積層部と、ドレイン電極DEとドレイン線DLの積層部とを設けたが、これらの部位を単層膜としてもよい。
基板の上方に形成された第1窒化物半導体層と、
前記第1窒化物半導体層上に形成された第2窒化物半導体層と、
前記第2窒化物半導体層上に形成された第3窒化物半導体層と、
前記第3窒化物半導体層上に形成された第4窒化物半導体層と、
前記第4窒化物半導体層の上方に、第5窒化物半導体層を介して配置されたゲート電極と、
前記ゲート電極の両側の前記第4窒化物半導体層の上方にそれぞれ形成された第1電極および第2電極と、
前記第1窒化物半導体層と電気的に接続された接続電極と、
を有し、
前記第2窒化物半導体層の電子親和力は、前記第1窒化物半導体層の電子親和力以上であり、
前記第3窒化物半導体層の電子親和力は、前記第1窒化物半導体層の電子親和力以上であり、
前記第4窒化物半導体層の電子親和力は、前記第1窒化物半導体層の電子親和力より小さく、
前記第5窒化物半導体層の電子親和力は、前記第4窒化物半導体層の電子親和力より大きく、
前記接続電極は、前記第1電極と電気的に分離され、
前記接続電極に印加される電圧は、前記第1電極に印加される電圧と異なる、半導体装置。
基板の上方に形成された第1窒化物半導体層と、
前記第1窒化物半導体層上に形成された第2窒化物半導体層と、
前記第2窒化物半導体層上に形成された第3窒化物半導体層と、
前記第3窒化物半導体層上に形成された第4窒化物半導体層と、
前記第4窒化物半導体層を貫通し、前記第3窒化物半導体層の途中まで到達する溝と、
前記溝内にゲート絶縁膜を介して配置されたゲート電極と、
前記ゲート電極の両側の前記第4窒化物半導体層の上方にそれぞれ形成された第1電極および第2電極と、
前記第1窒化物半導体層と電気的に接続された接続電極と、
を有し、
前記第2窒化物半導体層の電子親和力は、前記第1窒化物半導体層の電子親和力以上であり、
前記第3窒化物半導体層の電子親和力は、前記第1窒化物半導体層の電子親和力以上であり、
前記第4窒化物半導体層の電子親和力は、前記第1窒化物半導体層の電子親和力より小さく、
前記接続電極に印加される電圧は、前記第1電極に印加される電圧と相対的に異なる、半導体装置。
2S 第2の窒化物半導体層(電圧固定層)
3S 第3の窒化物半導体層(チャネル下地層)
4E 第4電極
4S 第4の窒化物半導体層(チャネル層)
5S 第5の窒化物半導体層(障壁層)
6S 第6の窒化物半導体層(メサ型のゲート接合層)
BOX 絶縁層
BT バイアス端子
BUF 高抵抗バッファ層
C1 コンタクトホール
CA チップ領域
DE ドレイン電極
DL ドレイン線
DP ドレインパッド
EP エピタキシャル層
EX n型の低濃度不純物領域
GE ゲート電極
GI ゲート絶縁膜
GL ゲート線
GP ゲートパッド
h ホール
IF1 絶縁膜
IL1 層間絶縁膜
IN1 入力端子
IN2 入力端子
ISO 素子分離領域
M 金属膜
OUT1 出力端子
OUT2 出力端子
PC パルス幅変調回路
PW p型ウエル
R1 フォトレジスト膜
S 半導体層
SS 支持基板
SD n型の高濃度不純物領域
SE ソース電極
SL ソース線
SP ソースパッド
SUB 基板
SW 側壁膜
T 溝
TR1 ハイサイドトランジスタ
TR2 ローサイドトランジスタ
TR3 ハイサイドトランジスタ
TR4 ローサイドトランジスタ
UM 下地金属膜
VIA ビアホール
Claims (2)
- 基板の上方に形成された第1窒化物半導体層と、
前記第1窒化物半導体層上に形成された第2窒化物半導体層と、
前記第2窒化物半導体層上に形成された第3窒化物半導体層と、
前記第3窒化物半導体層上に形成された第4窒化物半導体層と、
前記第4窒化物半導体層を貫通し、前記第3窒化物半導体層の途中まで到達する溝と、
前記溝内にゲート絶縁膜を介して配置されたゲート電極と、
前記ゲート電極の両側の前記第4窒化物半導体層の上方にそれぞれ形成された第1電極および第2電極と、
前記第1窒化物半導体層と電気的に接続された接続電極と、
を有し、
前記第2窒化物半導体層の電子親和力は、前記第1窒化物半導体層の電子親和力以上であり、
前記第3窒化物半導体層の電子親和力は、前記第1窒化物半導体層の電子親和力以上であり、
前記第4窒化物半導体層の電子親和力は、前記第1窒化物半導体層の電子親和力より小さく、
前記接続電極は、前記第1電極と電気的に分離され、
前記接続電極に印加される電圧は、前記第1電極に印加される電圧と異なり、
前記接続電極と、前記第1電極とは、素子分離領域により電気的に分離され、
前記接続電極は、前記第2窒化物半導体層、前記第3窒化物半導体層および前記第4窒化物半導体層を貫通し、前記第1窒化物半導体層まで到達する貫通孔の内部に配置され、
前記素子分離領域は、略矩形のチップ領域の内部に、前記チップ領域の外周に沿って設けられ、
前記貫通孔は、略矩形の前記チップ領域の内部であって、前記素子分離領域の外側に、前記チップ領域の外周に沿って設けられる、半導体装置。 - 請求項1記載の半導体装置において、
前記貫通孔と、前記チップ領域の端部との距離は、0.2mm以下である、半導体装置。
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