EP3918636A4 - Group iii-nitride high-electron mobility transistors with buried p-type layers and process for making the same - Google Patents

Group iii-nitride high-electron mobility transistors with buried p-type layers and process for making the same Download PDF

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Publication number
EP3918636A4
EP3918636A4 EP20749178.8A EP20749178A EP3918636A4 EP 3918636 A4 EP3918636 A4 EP 3918636A4 EP 20749178 A EP20749178 A EP 20749178A EP 3918636 A4 EP3918636 A4 EP 3918636A4
Authority
EP
European Patent Office
Prior art keywords
buried
making
same
group iii
electron mobility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20749178.8A
Other languages
German (de)
French (fr)
Other versions
EP3918636A1 (en
Inventor
Saptharishi Sriram
Thomas Smith
Alexander Suvorov
Christer Hallin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
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Wolfspeed Inc
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Filing date
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Priority claimed from US16/260,095 external-priority patent/US10840334B2/en
Priority claimed from US16/376,596 external-priority patent/US10892356B2/en
Application filed by Wolfspeed Inc filed Critical Wolfspeed Inc
Publication of EP3918636A1 publication Critical patent/EP3918636A1/en
Publication of EP3918636A4 publication Critical patent/EP3918636A4/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8124—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with multiple gate

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
EP20749178.8A 2019-01-28 2020-01-28 Group iii-nitride high-electron mobility transistors with buried p-type layers and process for making the same Pending EP3918636A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/260,095 US10840334B2 (en) 2016-06-24 2019-01-28 Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
US16/376,596 US10892356B2 (en) 2016-06-24 2019-04-05 Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
PCT/US2020/015331 WO2020159934A1 (en) 2019-01-28 2020-01-28 Group iii-nitride high-electron mobility transistors with buried p-type layers and process for making the same

Publications (2)

Publication Number Publication Date
EP3918636A1 EP3918636A1 (en) 2021-12-08
EP3918636A4 true EP3918636A4 (en) 2023-03-08

Family

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Application Number Title Priority Date Filing Date
EP20749178.8A Pending EP3918636A4 (en) 2019-01-28 2020-01-28 Group iii-nitride high-electron mobility transistors with buried p-type layers and process for making the same

Country Status (5)

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EP (1) EP3918636A4 (en)
JP (2) JP7248804B2 (en)
KR (3) KR102626266B1 (en)
CN (1) CN113950748A (en)
WO (1) WO2020159934A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116457946A (en) * 2021-08-03 2023-07-18 美国亚德诺半导体公司 Impurity reduction technique in gallium nitride regrowth

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130062671A1 (en) * 2011-09-12 2013-03-14 Kabushiki Kaisha Toshiba Nitride semiconductor device
US20160086878A1 (en) * 2014-09-23 2016-03-24 Infineon Technologies Austria Ag Electronic Component
US20170365702A1 (en) * 2014-09-05 2017-12-21 Infineon Technologies Austria Ag High-Electron-Mobility Transistor Having a Buried Field Plate
EP3276670A1 (en) * 2016-07-25 2018-01-31 Renesas Electronics Corporation Semiconductor device and method of manufacturing the semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6956239B2 (en) * 2002-11-26 2005-10-18 Cree, Inc. Transistors having buried p-type layers beneath the source region
JP5758132B2 (en) * 2011-01-26 2015-08-05 株式会社東芝 Semiconductor element
JP2012231002A (en) * 2011-04-26 2012-11-22 Advanced Power Device Research Association Semiconductor device
EP2721640A1 (en) * 2011-06-20 2014-04-23 The Regents Of The University Of California Current aperture vertical electron transistors
US9024356B2 (en) * 2011-12-20 2015-05-05 Infineon Technologies Austria Ag Compound semiconductor device with buried field plate
JP2017059786A (en) * 2015-09-18 2017-03-23 パナソニックＩｐマネジメント株式会社 Semiconductor device
US10192980B2 (en) * 2016-06-24 2019-01-29 Cree, Inc. Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
JP6996241B2 (en) * 2017-11-13 2022-01-17 富士通株式会社 Compound semiconductor equipment and its manufacturing method, power supply equipment, high frequency amplifier

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130062671A1 (en) * 2011-09-12 2013-03-14 Kabushiki Kaisha Toshiba Nitride semiconductor device
US20170365702A1 (en) * 2014-09-05 2017-12-21 Infineon Technologies Austria Ag High-Electron-Mobility Transistor Having a Buried Field Plate
US20160086878A1 (en) * 2014-09-23 2016-03-24 Infineon Technologies Austria Ag Electronic Component
EP3276670A1 (en) * 2016-07-25 2018-01-31 Renesas Electronics Corporation Semiconductor device and method of manufacturing the semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
CHIU HSIEN-CHIN ET AL: "Analysis of the Back-Gate Effect in Normally OFF p-GaN Gate High-Electron Mobility Transistor", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE, USA, vol. 62, no. 2, February 2015 (2015-02-01), pages 507 - 511, XP011570701, ISSN: 0018-9383, [retrieved on 20150120], DOI: 10.1109/TED.2014.2377747 *

Also Published As

Publication number Publication date
CN113950748A (en) 2022-01-18
KR20210119511A (en) 2021-10-05
EP3918636A1 (en) 2021-12-08
KR20240010555A (en) 2024-01-23
JP2022519825A (en) 2022-03-25
JP7248804B2 (en) 2023-03-29
WO2020159934A1 (en) 2020-08-06
JP2023041688A (en) 2023-03-24
KR20230025527A (en) 2023-02-21
KR102626266B1 (en) 2024-01-16

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